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41 条记录 (耗时 0.035 秒)

    Scrambling apparatus
    31.
    发明授权
    Scrambling apparatus 失效
    加扰设备

    公开(公告)号：US5272753A

    公开(公告)日：1993-12-21

    申请号：US928458

    申请日：1992-08-12

    申请人： Hitoshi Nakayama ,  Hideo Tomita

    发明人： Hitoshi Nakayama ,  Hideo Tomita

    IPC分类号： G06K17/00 ,  G06F21/10 ,  G07F7/10 ,  H04K1/04 ,  H04N7/167 ,  H04N21/266 ,  H04N21/418 ,  H04K1/00

    CPC分类号： G07F7/1008 ,  G06Q20/346 ,  H04N7/163

    摘要： A scrambling apparatus includes an IC card connector for receiving an IC card in which at least either scramble control information or unscramble control information is written in advance, a reading circuit for reading the stored contents of the IC card and a control system for controlling the operation of the apparatus. The scrambling apparatus may also include an IC card connector for receiving a data storing IC card, a data writing circuit for writing scramble control information, unscramble control information and the information related to the operations of the apparatus into the IC card.

    摘要翻译： 加扰装置包括用于接收IC卡的IC卡连接器，其中预先写入至少一个加扰控制信息或解扰控制信息，用于读取IC卡的存储内容的读取电路和用于控制该操作的控制系统 的装置。 加扰装置还可以包括用于接收数据存储IC卡的IC卡连接器，用于将加扰控制信息写入的数据写入电路，解扰控制信息和与该装置的操作有关的信息到IC卡中。

    Thermoelectric humidifier and display case provided with such humidifier
    32.
    发明授权
    Thermoelectric humidifier and display case provided with such humidifier 失效
    带加湿器的热电加湿器和展示柜

    公开(公告)号：US5007242A

    公开(公告)日：1991-04-16

    申请号：US409338

    申请日：1989-09-19

    申请人： Hitoshi Nakayama

    发明人： Hitoshi Nakayama

    IPC分类号： A47F3/04 ,  F24F5/00 ,  F24F6/02 ,  F25B21/02

    CPC分类号： A47F3/0495 ,  F24F5/0042 ,  F24F6/025 ,  F25B21/02

    摘要： Here is disclosed a humidifier in which a water reservoir is provided on a heat radiating side of an element having Peltier effect and said element is energized so that a quantity of water filling said reservoir is heat-evaporated by calorific power radiated from said element and water vapor thus obtained is used to protect foods, cake, dairy products etc. against drying. More preferably, a blowing fan is provided on the cooling side of the Peltier element and cooled air stream is exhausted together with the air stream containing heated stream through a common outlet. Said humidifier may be located on the outlet side of cooled air supplied form a cooling coil of a display case to avoid inconvenience that humidified air might be brought into direct contact with the cooling coil and condensated, with loss of humidified steam.

    Semiconductor device and manufacturing method thereof
    33.
    发明授权
    Semiconductor device and manufacturing method thereof 有权
    半导体装置及其制造方法

    公开(公告)号：US08785241B2

    公开(公告)日：2014-07-22

    申请号：US13174960

    申请日：2011-07-01

    申请人： Shinya Sasagawa ,  Hitoshi Nakayama ,  Masashi Tsubuku ,  Daigo Shimada

    发明人： Shinya Sasagawa ,  Hitoshi Nakayama ,  Masashi Tsubuku ,  Daigo Shimada

    IPC分类号： H01L21/44 ,  H01L21/336

    CPC分类号： H01L29/66969 ,  H01L22/14 ,  H01L27/088 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1288 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/7869

    摘要： When a transistor having bottom gate bottom contact structure is manufactured, for example, a conductive layer constituting a source and a drain has a three-layer structure and two-step etching is performed. In the first etching process, an etching method in which the etching rates for at least the second film and the third film are high is employed, and the first etching process is performed until at least the first film is exposed. In the second etching process, an etching method in which the etching rate for the first film is higher than that in the first etching process and the etching rate for a “layer provided below and in contact with the first film” is lower than that in the first etching process is employed. The side wall of the second film is slightly etched when a resist mask is removed after the second etching process.

    摘要翻译： 当制造具有底栅底接触结构的晶体管时，例如，构成源极和漏极的导电层具有三层结构，并且执行两步蚀刻。 在第一蚀刻工艺中，采用其中至少第二膜和第三膜的蚀刻速率高的蚀刻方法，并且进行第一蚀刻处理直到至少第一膜暴露。 在第二蚀刻工艺中，第一膜的蚀刻速率高于第一蚀刻工艺中的蚀刻速率和“下面提供并与第一膜接触的”层的蚀刻速率的蚀刻方法低于 采用第一蚀刻工艺。 当在第二蚀刻工艺之后去除抗蚀剂掩模时，第二膜的侧壁被稍微蚀刻。

    Semiconductor device and manufacturing method thereof
    34.
    发明授权
    Semiconductor device and manufacturing method thereof 有权
    半导体装置及其制造方法

    公开(公告)号：US08637354B2

    公开(公告)日：2014-01-28

    申请号：US13159804

    申请日：2011-06-14

    申请人： Shinya Sasagawa ,  Hitoshi Nakayama ,  Masashi Tsubuku ,  Daigo Shimada

    发明人： Shinya Sasagawa ,  Hitoshi Nakayama ,  Masashi Tsubuku ,  Daigo Shimada

    IPC分类号： H01L21/00 ,  H01L29/04

    CPC分类号： H01L29/7869 ,  H01L29/45 ,  H01L29/66969

    摘要： When a transistor including a conductive layer having a three-layer structure is manufactured, three-stage etching is performed. In the first etching process, an etching method in which the etching rates for the second film and the third film are high is employed, and the first etching process is performed until the first film is at least exposed. In the second etching process, an etching method in which the etching rate for the first film is higher than that in the first etching process and the etching rate for a “layer provided below and in contact with the first film” is lower than that in the first etching process is employed. In the third etching process, an etching method in which the etching rates for the first to the third films are higher than those in the second etching process is preferably employed.

    摘要翻译： 当制造包括具有三层结构的导电层的晶体管时，进行三级蚀刻。 在第一蚀刻工艺中，采用其中第二膜和第三膜的蚀刻速率高的蚀刻方法，并且执行第一蚀刻处理直到第一膜至少暴露。 在第二蚀刻工艺中，第一膜的蚀刻速率高于第一蚀刻工艺中的蚀刻速率和“下面设置并与第一膜接触的”层的蚀刻速率的蚀刻方法低于 采用第一蚀刻工艺。 在第三蚀刻工艺中，优选使用其中第一至第三膜的蚀刻速率高于第二蚀刻工艺中的蚀刻速率的蚀刻方法。

    Transistor and manufacturing method of the same
    35.
    发明授权
    Transistor and manufacturing method of the same 有权
    晶体管及其制造方法相同

    公开(公告)号：US08597992B2

    公开(公告)日：2013-12-03

    申请号：US13026520

    申请日：2011-02-14

    申请人： Shinya Sasagawa ,  Masashi Tsubuku ,  Hitoshi Nakayama ,  Daigo Shimada

    发明人： Shinya Sasagawa ,  Masashi Tsubuku ,  Hitoshi Nakayama ,  Daigo Shimada

    IPC分类号： H01L21/00

    CPC分类号： H01L21/76838 ,  H01L21/32136 ,  H01L21/32139 ,  H01L29/66969 ,  H01L29/7869

    摘要： A transistor is manufactured by a method including: forming a first wiring layer; forming a first insulating film to cover the first wiring layer; forming a semiconductor layer over the first insulating film; forming a conductive film over the semiconductor layer; and performing at least two steps of etching on the conductive film to form second wiring layers which are apart from each other, wherein the two steps of etching include at least a first etching process performed under the condition that the etching rate for the conductive film is higher than the etching rate for the semiconductor layer, and a second etching process performed under the condition that the etching rates for the conductive film and the semiconductor layer are higher than those of the first etching process.

    摘要翻译： 晶体管通过以下方法制造：包括：形成第一布线层; 形成第一绝缘膜以覆盖所述第一布线层; 在所述第一绝缘膜上形成半导体层; 在半导体层上形成导电膜; 并且对所述导电膜进行蚀刻的至少两个步骤以形成彼此分离的第二布线层，其中所述两个蚀刻步骤至少包括在导电膜的蚀刻速率为 高于半导体层的蚀刻速率，以及在导电膜和半导体层的蚀刻速率高于第一蚀刻工艺的蚀刻速率的条件下进行的第二蚀刻工艺。

    Light emitting and receiving device
    36.
    发明授权
    Light emitting and receiving device 有权
    发光和接收装置

    公开(公告)号：US08194714B2

    公开(公告)日：2012-06-05

    申请号：US12781257

    申请日：2010-05-17

    申请人： Hitoshi Nakayama

    发明人： Hitoshi Nakayama

    IPC分类号： H01S5/00 ,  H01L21/00

    CPC分类号： H01S5/0264 ,  H01S5/1085 ,  H01S5/4031 ,  H01S5/4068

    摘要： A light emitting and receiving device having a first region and a second region adjacent to the first region in a plan view, includes: a light absorbing layer formed in the first and second regions; a first cladding layer formed above the light absorbing layer; an active layer formed above the first cladding layer in the first region; and a second cladding layer formed above the active layer, wherein at least part of the active layer forms a gain region, a stepped side surface having an end surface of the gain region is formed at the boundary between the first region and the second region, light produced in the gain region exits through the end surface of the gain region, and part of the light having exited reaches the light absorbing layer in the second region and is received by the light absorbing layer.

    摘要翻译： 在平面图中具有第一区域和与第一区域相邻的第二区域的发光和接收装置包括：形成在第一和第二区域中的光吸收层; 形成在所述光吸收层的上方的第一覆层; 在第一区域中形成在第一包层上方的有源层; 以及形成在所述有源层上方的第二覆层，其中所述有源层的至少一部分形成增益区域，在所述第一区域和所述第二区域之间的边界处形成具有所述增益区域的端面的阶梯侧面， 在增益区域中产生的光通过增益区域的端面离开，并且退出的一部分光到达第二区域中的光吸收层并被光吸收层接收。

    Method of and apparatus for applying liquid material
    39.
    发明申请
    Method of and apparatus for applying liquid material 有权
    液体材料的应用方法和设备

    公开(公告)号：US20050045653A1

    公开(公告)日：2005-03-03

    申请号：US10921869

    申请日：2004-08-20

    申请人： Koji Tanaka ,  Hitoshi Nakayama ,  Shinji Atsuzawa ,  Youichi Andoh

    发明人： Koji Tanaka ,  Hitoshi Nakayama ,  Shinji Atsuzawa ,  Youichi Andoh

    IPC分类号： B05D1/26 ,  B05B15/68 ,  B05C5/00 ,  B05C11/00 ,  B05D1/02 ,  B05D3/00 ,  G01F11/00

    CPC分类号： B05B15/68

    摘要： Disclosed is a method, in which when a liquid material is applied to the application surface of an object of application by using a liquid material supply device having a syringe containing the liquid material and equipped with a needle having at its distal end an ejection hole from which the liquid material is ejected, an image of the distal end of the needle is taken laterally by a horizontal camera together with a height reference mark when an ascent/descent drive system of the liquid material supply device is set to a reference height, and the height position of the distal end of the needle is obtained from the difference between the height of the distal end of the needle and the height of the height reference mark.

    摘要翻译： 公开了一种方法，其中当通过使用具有含有液体材料的注射器的液体材料供应装置将液体材料施加到施加物体的施加表面上并且配备有在其远端具有喷射孔的喷射孔时， 当液体材料供给装置的上升/下降驱动系统被设定为参考高度时，液体材料被喷射的情况下，水平摄像机的横向摄像机与高度参考标记一起被拍摄针的远端的图像，以及 针的远端的高度位置是根据针的远端的高度与高度参考标记的高度之间的差来获得的。