公开(公告)号：US6017836A

公开(公告)日：2000-01-25

申请号：US657202

申请日：1996-06-03

申请人： Yukihito Nagashima ,  Koichi Sakaguchi ,  Takashi Uchino

发明人： Yukihito Nagashima ,  Koichi Sakaguchi ,  Takashi Uchino

IPC分类号： C03C3/095 ,  C03C4/02 ,  C03C4/08 ,  C03C3/087

CPC分类号： C03C4/02 ,  C03C3/095 ,  C03C4/082 ,  C03C4/085 ,  Y10S501/904 ,  Y10S501/905

摘要： Ultraviolet and infrared radiation absorbing glass comprising, as basic glass components, 65 to 80% by weight of SiO.sub.2, 0 to 5% by weight of Al.sub.2 O.sub.3, 0 to 10% by weight of MgO, 5 to 15% by weight of CaO, 10 to 18% by weight of Na.sub.2 O, 0 to 5% by weight of K.sub.2 O, 5 to 15% by weight in total of MgO and CaO, 10 to 20% by weight in total of Na.sub.2 O and K.sub.2 O, and 0.2 to 5.0% by weight of B.sub.2 O.sub.3 ; and as coloring components, 0.5 to 1.0% by weight, in terms of Fe.sub.2 O.sub.3, of total iron oxide having a ratio of FeO based on the total iron oxide of 0.20 to 0.40, 0.2 to 2.0% by weight of CeO.sub.2, and 0 to 1.0% by weight of TiO.sub.2, and ultraviolet and infrared radiation absorbing glass comprising, as basic glass components, 65 to 80% by weight of SiO.sub.2, 0 to 5% by weight of Al.sub.2 O.sub.3, 0 to 10% by weight of MgO, 5 to 15% by weight of CaO, 10 to 18% by weight of Na.sub.2 O, 0 to 5% by weight of K.sub.2 O, 5 to 15% by weight in total of MgO and CaO, 10 to 20% by weight in total of Na.sub.2 O and K.sub.2 O, and 0.5 to 5.0% by weight of B.sub.2 O.sub.3 ; and, as coloring components, 0.5 to 1.0% by weight, in terms of Fe.sub.2 O.sub.3, of total iron oxide having a ratio of FeO based on the total iron oxide of 0.20 to 0.40, 0.2 to 1.2% by weight of CeO.sub.2, and 0 to 1.0% by weight of TiO.sub.2.

摘要翻译： 紫外线和红外辐射吸收玻璃，其包含作为基本玻璃组分的65至80重量％的SiO 2，0至5重量％的Al 2 O 3，0至10重量％的MgO，5至15重量％的CaO，10 至18重量％的Na 2 O，0至5重量％的K 2 O，5至15重量％的MgO和CaO，10至20重量％的Na 2 O和K 2 O，以及0.2至5.0重量％ 的B2O3; 作为着色成分，以Fe 2 O 3为基准计，以氧化铁总计为FeO计为0.20〜0.40,0.2〜2.0重量％，CeO 2为0〜1.0的总氧化铁为0.5〜1.0重量％ TiO 2的重量％以及紫外线和红外线吸收玻璃，其包含作为基本玻璃成分的65〜80重量％的SiO 2，0〜5重量％的Al 2 O 3，0〜10重量％的MgO，5〜15重量％ CaO，10〜18重量％的Na 2 O，0〜5重量％的K 2 O，5〜15重量％的MgO和CaO，10〜20重量％的Na 2 O和K 2 O， 和0.5〜5.0重量％的B 2 O 3; 作为着色成分，以Fe 2 O 3为基准计，氧化铁的总量为0.5〜1.0重量％，FeO占总氧化铁的比例为0.20〜0.40，CeO 2为0.2〜1.2重量％，Ce〜 1.0重量％的TiO 2。

公开(公告)号：US5768187A

公开(公告)日：1998-06-16

申请号：US718928

申请日：1996-09-25

申请人： Takashi Uchino ,  Nozomu Nambu ,  Akio Hagiwara

发明人： Takashi Uchino ,  Nozomu Nambu ,  Akio Hagiwara

IPC分类号： G11C7/16 ,  G11C11/56 ,  G11C11/34

CPC分类号： G11C11/5621 ,  G11C11/5628 ,  G11C7/16 ,  G11C2211/5641 ,  G11C2211/5644 ,  G11C7/1006

摘要： This non-volatile multi-state memory device switches a storing resolution of multi-state data corresponding to digital data stored in a non-volatile memory cell according to the data's characteristics. In more detail, digital audio data are output from an ADPCM encoder in n-bit units and m bits of address data indicating an address at which audio data are stored are output from an address controller. These are then input to a switching circuit, a bit number converting circuit converts m bits of address data to n bits of address data at the same level as the m bit data, and the converted n bits of address data and n bits of audio data are inputted to a second multiplexer. An output of the Second multiplexer is then selected in compliance with a switch signal from the address controller and either the selected n bits of address data or the audio data are sent to a read-write circuit. Consequently, for example, writing is carried out with storing resolution deemed as 16 when 4 bits of audio data are stored in an EEPROM cell array and storing resolution deemed as 2 when for instance 1 bit of address data is stored.

摘要翻译： 该非易失性多状态存储装置根据数据的特性来切换对应于存储在非易失性存储单元中的数字数据的多状态数据的存储分辨率。 更详细地，数字音频数据以n位单位从ADPCM编码器输出，并且从地址控制器输出指示存储音频数据的地址的m位地址数据。 然后将它们输入到开关电路，位数转换电路将m位地址数据转换为与m位数据相同电平的n位地址数据，并将转换的n位地址数据和n位音频数据 被输入到第二多路复用器。 然后根据来自地址控制器的开关信号选择第二多路复用器的输出，并且将所选择的n位地址数据或音频数据发送到读写电路。 因此，例如，当4位音频数据被存储在EEPROM单元阵列中时，将存储分辨率视为16进行写入，并且当存储例如1比特的地址数据时，将分辨率视为2。

公开(公告)号：US08109814B2

公开(公告)日：2012-02-07

申请号：US12377898

申请日：2008-10-30

申请人： Takashi Uchino ,  Shinsuke Sato ,  Takatoshi Matsushita

发明人： Takashi Uchino ,  Shinsuke Sato ,  Takatoshi Matsushita

IPC分类号： H05K5/00 ,  F03D9/00

CPC分类号： F03D80/60 ,  F05B2240/14 ,  Y02E10/726

摘要： Provided is a wind turbine generator system that can cool a nacelle interior by ventilation irrespective of the outside air temperature in various installation environments. In a wind turbine generator system in which equipment of drive and electricity generation mechanisms that are coupled to a rotor head provided with wind turbine blades is disposed inside a nacelle, and in which, by driving a ventilation fan provided in the nacelle, outside air introduced from an air inlet provided in a front face of the nacelle is exhausted outside the nacelle from an air outlet that communicates with a fan outlet, to perform ventilation cooling of the interior, a side air inlet is additionally provided in a side face of the nacelle at a position where a negative pressure is generated by air flowing outside the nacelle.

摘要翻译： 提供了一种风力发电机系统，其可以通过不同的安装环境中的外部空气温度来冷却机舱内部。 在风力发电机系统中，其中连接到设置有风力涡轮机叶片的转子头的驱动和发电机构的设备设置在机舱内部，并且其中通过驱动设置在机舱中的通风扇，引入外部空气 从设置在机舱前面的空气入口从与风扇出口连通的出风口排出到机舱外部，以进行内部的通风冷却，另外在机舱的侧面设置侧空气入口 在空气流过机舱外部产生负压的位置。

公开(公告)号：US07837535B2

公开(公告)日：2010-11-23

申请号：US11887234

申请日：2006-03-28

申请人： Takashi Uchino

发明人： Takashi Uchino

IPC分类号： B24B49/00 ,  B24B7/00

CPC分类号： B24D7/18 ,  B24B1/04 ,  B24B19/06 ,  B24B35/00 ,  F16C19/36 ,  F16C33/64 ,  Y10S451/91

摘要： A superfinishing stone 2 is slid on a rotating subject surface 7 as pressed against the subject surface 7 and is held in contact against the subject surface 7 as vibrated thereon in a different direction from the sliding direction. The superfinishing stone includes plural stone portions 3, 4 divided by a split surface 6 inclined to both the sliding direction and the vibrating direction and mutually independently movable along the split surface 6 and in the pressing direction.

摘要翻译： 超精加工石2在被压靠在被检体表面7上的旋转被摄体表面7上滑动，并且在与滑动方向不同的方向上振动地保持与被检测体表面7抵接。 超精加工石包括由沿着滑动方向和振动方向倾斜的分割面6分割的多个石材部分3,4，并且可沿着分割面6和按压方向互相独立地移动。

公开(公告)号：US07238582B2

公开(公告)日：2007-07-03

申请号：US11000092

申请日：2004-12-01

申请人： Hiromi Shimamoto ,  Takashi Uchino ,  Takeo Shiba ,  Kazuhiro Ohnishi ,  Yoichi Tamaki ,  Takashi Kobayashi ,  Toshiyuki Kikuchi ,  Takahide Ikeda

发明人： Hiromi Shimamoto ,  Takashi Uchino ,  Takeo Shiba ,  Kazuhiro Ohnishi ,  Yoichi Tamaki ,  Takashi Kobayashi ,  Toshiyuki Kikuchi ,  Takahide Ikeda

IPC分类号： H01L21/8222

CPC分类号： H01L27/0652 ,  H01L27/0688 ,  H01L28/20

摘要： The present invention provides a polycrystalline silicon conducting structure (e.g., a resistor) whose resistance value is controlled, and can be less variable and less dependent on temperature with respect to any resistant value, and a process of producing the same. Use is made of at least a two-layer structure including a first polycrystalline silicon layer of large crystal grain size and a second polycrystalline silicon layer of small crystal grain size, and the first polycrystalline silicon layer has a positive temperature dependence of resistance while the second polycrystalline silicon layer has a negative temperature dependence of resistance, or vice versa. Moreover, the polycrystalline silicon layer of large grain size can be formed by high dose ion implantation and annealing, or by depositing the layers by chemical vapor deposition at different temperatures so as to form large-grain and small-grain layers.

摘要翻译： 本发明提供了一种其电阻值被控制的多晶硅导电结构（例如电阻器），并且可以相对于任何电阻值而言可以变化较小并且对温度的依赖性较小，及其制造方法。 使用至少包括具有大晶粒尺寸的第一多晶硅层和小晶粒尺寸的第二多晶硅层的两层结构，并且第一多晶硅层具有正的温度对电阻的依赖性，而第二多晶硅层的第二 多晶硅层具有负电阻的温度依赖性，反之亦然。 此外，可以通过高剂量离子注入和退火，或者通过在不同温度下的化学气相沉积来沉积这些层，形成大晶粒和小晶粒层，可以形成大晶粒尺寸的多晶硅层。

公开(公告)号：US20060258525A1

公开(公告)日：2006-11-16

申请号：US10569822

申请日：2004-08-27

申请人： Takashi Uchino ,  Tomoko Yamada

发明人： Takashi Uchino ,  Tomoko Yamada

IPC分类号： C03B19/09 ,  C03C3/06 ,  C03B19/01

CPC分类号： C03C12/00 ,  C03B19/06 ,  C03B19/066 ,  C03B20/00 ,  C03B2201/03 ,  C03B2201/04

摘要： It is an object of the present invention to provide a light emitting device of the next generation optical device having a broad emission property that a width at half maximum of an emission spectrum is large in a wavelength range of visible light and capable of recognizing white light emitting by photoluminescence (PL). In a baking process for baking a pressure molding formed by pressure molding of silica fine particles such as fumed silica, a baking temperature is made as not more than 1000° C., hydroxyl groups of the silica fine particles are sufficiently subjected to dehydration condensation reaction so that the particles becomes transparent, a structural defect generated in the process is held without being relaxed, and thus a silica glass is generated. The silica glass is employed as a fluorescent substance.

摘要翻译： 本发明的目的是提供一种具有宽发射特性的下一代光学器件的发光器件，其发射光谱的一半宽度在可见光的波长范围内大，并且能够识别白光 通过光致发光（PL）发射。 在通过对二氧化硅微粒如热解法二氧化硅进行加压成型而形成的压力成型的烘烤处理中，烧成温度为1000℃以下，二氧化硅微粒的羟基充分进行脱水缩合反应 使得颗粒变得透明，在不松弛的情况下保持在该过程中产生的结构缺陷，因此产生石英玻璃。 石英玻璃用作荧光物质。

公开(公告)号：US07110557B2

公开(公告)日：2006-09-19

申请号：US09818249

申请日：2001-03-26

申请人： Yoshihiko Kon ,  Takashi Uchino ,  Hiroshi Kaneko ,  Takahiko Masumoto

发明人： Yoshihiko Kon ,  Takashi Uchino ,  Hiroshi Kaneko ,  Takahiko Masumoto

IPC分类号： H03G3/00

CPC分类号： H03G3/3089 ,  H03G3/001

摘要： Volume adjustment is performed in small steps at a DSP (12) and volume adjustment is performed in wide steps at electronic volume circuits (18L, 18R). Adjustment only by the DSP (12) is performed for a small volume range less than or equal to a predetermined level. For a volume higher than or equal to the predetermined level, fine adjustment by the DSP (12) at the transient period of volume adjustment is combined to reduce the increment of variation so that the volume adjustment is performed gradually.

摘要翻译： 在DSP（12）处以小步骤进行音量调节，并且在电子体积电路（18L，18R）上以宽的步长进行音量调节。 对于小于或等于预定电平的小体积范围，仅对DSP（12）进行调整。 对于高于或等于预定电平的音量，组合音量调节过程中DSP（12）的微调，以减小变化的增量，从而逐渐进行音量调节。

公开(公告)号：US07064454B2

公开(公告)日：2006-06-20

申请号：US10417452

申请日：2003-04-16

申请人： Mitsuo Fukaya ,  Takashi Uchino ,  Takahide Sugiyama

发明人： Mitsuo Fukaya ,  Takashi Uchino ,  Takahide Sugiyama

IPC分类号： F02B63/00

CPC分类号： H02P9/04 ,  F02B63/04 ,  F02D13/04 ,  F02D29/06

摘要： A power generator system incorporates a generator driven by an engine. A case houses the generator and the engine. A controller communicates with the engine so as to control the speed at which the engine drives the generator. A temperature sensor is disposed so as to sense a temperature within the case and to send a temperature signal to the controller. The controller controls the speed of the engine depending upon at least the temperature signal received from the temperature sensor.

公开(公告)号：US06781202B2

公开(公告)日：2004-08-24

申请号：US10303884

申请日：2002-11-26

申请人： Ken Yamaguchi ,  Yoshiaki Takemura ,  Kenichi Osada ,  Masatada Horiuchi ,  Takashi Uchino

发明人： Ken Yamaguchi ,  Yoshiaki Takemura ,  Kenichi Osada ,  Masatada Horiuchi ,  Takashi Uchino

IPC分类号： H01L2976

CPC分类号： H01L29/6659 ,  H01L21/823807 ,  H01L21/823814 ,  H01L27/092 ,  H01L29/1083

摘要： A higher-performance short channel MOS transistor with enhanced resistance to soft errors caused by exposure to high-energy rays is realized. At the time of forming a deep source/drain diffusion layer region at high density, an intermediate region of a density higher than that of impurity of a semiconductor substrate is formed between the source/drain diffusion layer and the semiconductor substrate of a conduction type opposite to that of the source/drain diffusion layer. The intermediate region is formed with a diffusion window for forming the source/drain, an intermediate layer of uniform concentration and uniform width can be realized at low cost.

摘要翻译： 实现了通过暴露于高能射线引起的对软误差的增强的抗性的更高性能的短通道MOS晶体管。 在以高密度形成深源极/漏极扩散层区域时，在源极/漏极扩散层与相反的导电类型的半导体衬底之间形成密度高于半导体衬底的密度的中间区域 与源极/漏极扩散层的相反。 中间区形成有用于形成源极/漏极的扩散窗口，可以以低成本实现均匀浓度和均匀宽度的中间层。

公开(公告)号：US5424575A

公开(公告)日：1995-06-13

申请号：US890787

申请日：1992-06-01

申请人： Katsuyoshi Washio ,  Tohru Nakamura ,  Takahiro Onai ,  Masatada Horiuchi ,  Takashi Uchino

发明人： Katsuyoshi Washio ,  Tohru Nakamura ,  Takahiro Onai ,  Masatada Horiuchi ,  Takashi Uchino

IPC分类号： H01L21/331 ,  H01L27/12 ,  H01L29/06 ,  H01L29/73 ,  H01L29/72

CPC分类号： H01L29/7317 ,  H01L27/1203 ,  H01L29/0692

摘要： A semiconductor device has an electrically insulating substrate and a semiconductor layer formed on the insulating substrate. A plurality of semiconductor regions are defined so as to be joined to each other to form at least two homojunctions in the semiconductor layer. A lead conductor for one of the semiconductor regions which is required to have a small thickness has a specific structure such that the lead conductor is in contact with the one semiconductor region at the main surface of the semiconductor layer for electrical connection therebetween and extends over that portion of the semiconductor layer which contributes to definition of at least one of the semiconductor regions other than the first-mentioned one semiconductor region.

摘要翻译： 半导体器件具有形成在绝缘基板上的电绝缘基板和半导体层。 多个半导体区域被定义为彼此接合以在半导体层中形成至少两个同态。 需要具有小厚度的半导体区域之一的引线导体具有特定结构，使得引线导体与半导体层的主表面处的一个半导体区域接触，以在其间进行电连接，并延伸超过该半导体区域 部分半导体层有助于定义除了前述一个半导体区域以外的半导体区域中的至少一个。