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    Radiation-Emitting Semiconductor Body
    32.
    发明申请
    Radiation-Emitting Semiconductor Body 有权
    辐射发射半导体体

    公开(公告)号：US20100294957A1

    公开(公告)日：2010-11-25

    申请号：US12680620

    申请日：2008-08-28

    申请人： Tony Albrecht ,  Stefan Bader ,  Berthold Hahn

    发明人： Tony Albrecht ,  Stefan Bader ,  Berthold Hahn

    IPC分类号： H01L33/30

    CPC分类号： H01L33/06 ,  H01L33/08 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Described is a radiation-emitting semiconductor body (1) with an active layer (2) for generation of radiation of a first wavelength (λ1) and a reemission layer (3) which comprises a quantum well structure (4) comprising a quantum layer structure (5) and a barrier layer structure (6). The reemission layer is intended for generation of incoherent radiation of a second wavelength (λ2) by absorption of the radiation of the first wavelength in the barrier layer structure.

    摘要翻译： 描述了具有用于产生第一波长（λ1）的辐射的有源层（2）和包括量子阱结构（4）的辐射发射半导体本体（1），所述量子阱结构（4）包括量子层结构 （5）和阻挡层结构（6）。 再发射层旨在通过吸收阻挡层结构中的第一波长的辐射来产生第二波长（λ2）的非相干辐射。

    Radiation-emitting-and-receiving semiconductor chip and method for producing such a semiconductor chip
    34.
    发明授权
    Radiation-emitting-and-receiving semiconductor chip and method for producing such a semiconductor chip 有权
    辐射发射和接收半导体芯片及其制造方法

    公开(公告)号：US07335922B2

    公开(公告)日：2008-02-26

    申请号：US10951525

    申请日：2004-09-28

    申请人： Glenn-Yves Plaine ,  Tony Albrecht ,  Peter Brick ,  Marc Philippens

    发明人： Glenn-Yves Plaine ,  Tony Albrecht ,  Peter Brick ,  Marc Philippens

    IPC分类号： H01L27/15

    CPC分类号： H01L27/15 ,  H01L31/173

    摘要： A radiation-emitting-and-receiving semiconductor component has at least a first semiconductor layer construction (1) for emitting radiation and a second semiconductor layer construction (2) for receiving radiation, which are arranged in a manner spaced apart from one another on a common substrate (3) and have at least one first contact layer (4). The first semiconductor layer construction (1) has an electromagnetic-radiation-generating region (5) arranged between p-conducting semiconductor layers (6) and n-conducting semiconductor layers (7) of the first semiconductor layer construction (1). A second contact layer (8) is at least partially arranged on that surface of the first semiconductor layer construction (1) which is remote from the substrate (3) and that of the second semiconductor layer construction (2). The second semiconductor layer construction (2) has an electromagnetic-radiation-absorbing region (9), the composition of the radiation-generating region (5) being different from that of the radiation-absorbing region (9).

    摘要翻译： 辐射发射和接收半导体部件至少具有用于发射辐射的第一半导体层结构（1）和用于接收辐射的第二半导体层结构（2），所述第二半导体层结构（2）以彼此间隔开的方式布置 公共衬底（3）并且具有至少一个第一接触层（4）。 第一半导体层结构（1）具有布置在第一半导体层结构（1）的p导电半导体层（6）和n导电半导体层（7）之间的电磁辐射产生区域（5）。 第二接触层（8）至少部分地布置在远离基板（3）的第一半导体层结构（1）的表面和第二半导体层结构（2）的表面上。 第二半导体层结构（2）具有电磁辐射吸收区域（9），辐射产生区域（5）的组成与辐射吸收区域（9）的组成不同。

    Radiation-emitting semiconductor component
    36.
    发明申请
    Radiation-emitting semiconductor component 有权
    辐射发射半导体元件

    公开(公告)号：US20050207461A1

    公开(公告)日：2005-09-22

    申请号：US11047833

    申请日：2005-01-31

    申请人： Marc Philippens ,  Tony Albrecht

    发明人： Marc Philippens ,  Tony Albrecht

    IPC分类号： H01L27/15 ,  H01L33/08 ,  H01S3/10 ,  H01S5/026 ,  H01S5/18 ,  H01S5/183 ,  H01S5/20 ,  H01S5/40

    CPC分类号： H01L27/15 ,  H01L33/08 ,  H01S5/026 ,  H01S5/0425 ,  H01S5/18311 ,  H01S2301/18

    摘要： A radiation-emitting semiconductor component comprising a semiconductor body (3) with a first active zone (1) and a second active zone (2) arranged above the first active zone, the first active zone being provided for generating a radiation having a first wavelength λ1 (11) and the second active zone being provided for generating a radiation having a second wavelength λ2 (22), the radiation having the first wavelength λ1 being coherent and the radiation having the second wavelength λ2 being incoherent.

    摘要翻译： 一种辐射发射半导体部件，包括具有第一有源区（1）的半导体本体（3）和布置在所述第一有源区上方的第二有源区（2），所述第一有源区被设置用于产生具有第一波长 λ11（11），并且第二有源区被提供用于产生具有第二波长λ2（22）的辐射，该辐射具有第一波长λ< 1＆lt; 1＆gt;是相干的，并且具有第二波长λ2的辐射是不相干的。

    Luminescence diode chip with current spreading layer and method for producing the same
    38.
    发明授权
    Luminescence diode chip with current spreading layer and method for producing the same 有权
    具有电流扩散层的LED芯片及其制造方法

    公开(公告)号：US08017953B2

    公开(公告)日：2011-09-13

    申请号：US12158474

    申请日：2006-11-21

    申请人： Berthold Hahn ,  Ralph Wirth ,  Tony Albrecht ,  Magnus Ahlstedt ,  Stefan Illek ,  Klaus Streubel

    发明人： Berthold Hahn ,  Ralph Wirth ,  Tony Albrecht ,  Magnus Ahlstedt ,  Stefan Illek ,  Klaus Streubel

    IPC分类号： H01L27/15

    CPC分类号： H01L33/145 ,  H01L33/42

    摘要： An LED chip is specified that comprises at least one current barrier. The current barrier is suitable for selectively preventing or reducing, by means of a reduced current density, the generation of radiation in a region laterally covered by the electrical connector body. The current spreading layer contains at least one TCO (Transparent Conductive Oxide). In a particularly preferred embodiment, at least one current barrier is contained which comprises material of the epitaxial semiconductor layer sequence, material of the current spreading layer and/or an interface between the semiconductor layer sequence and the current spreading layer. A method for producing an LED chip is also specified.

    摘要翻译： 指定包括至少一个电流屏障的LED芯片。 电流屏障适合于通过减小的电流密度选择性地防止或减少由电连接器主体横向覆盖的区域中的辐射的产生。 电流扩散层含有至少一种TCO（透明导电氧化物）。 在特别优选的实施例中，包含至少一个电流屏障，其包括外延半导体层序列的材料，电流扩展层的材料和/或半导体层序列和电流扩展层之间的界面。 还指定了用于制造LED芯片的方法。

    Method for producing a radiation-emitting-and-receiving semiconductor chip
    39.
    发明申请
    Method for producing a radiation-emitting-and-receiving semiconductor chip 有权
    辐射发射和接收半导体芯片的制造方法

    公开(公告)号：US20080153189A1

    公开(公告)日：2008-06-26

    申请号：US12072365

    申请日：2008-02-26

    申请人： Glenn-Yves Plaine ,  Tony Albrecht ,  Peter Brick ,  Marc Philippens

    发明人： Glenn-Yves Plaine ,  Tony Albrecht ,  Peter Brick ,  Marc Philippens

    IPC分类号： H01L33/00

    CPC分类号： H01L27/15 ,  H01L31/173

    摘要： A method for producing an integrated semiconductor component comprising a first semiconductor layer construction for emitting radiation and a second semiconductor layer construction for receiving radiation, wherein a substrate is first provided and a first semiconductor layer sequence containing a radiation-generating region is deposited epitaxially on the substrate. A second semiconductor layer sequence containing a radiation-absorbing region is subsequently deposited epitaxially on the first semiconductor layer sequence. The second semiconductor layer sequence is then patterned in order to uncover a first location and a second location. A first semiconductor layer construction is electrically insulated from a second semiconductor layer construction. Finally, a first contact layer is applied to a free surface of the substrate and a second contact layer is applied at least to the first and second locations for contact-connection.

    摘要翻译： 一种用于制造集成半导体部件的方法，包括用于发射辐射的第一半导体层结构和用于接收辐射的第二半导体层结构，其中首先提供衬底，并且包含辐射产生区的第一半导体层序列外延地沉积在 基质。 随后在第一半导体层序列上外延沉积包含辐射吸收区的第二半导体层序列。 然后将第二半导体层序列图案化以便露出第一位置和第二位置。 第一半导体层结构与第二半导体层结构电绝缘。 最后，将第一接触层施加到衬底的自由表面，并且至少将第二接触层施加到第一和第二位置用于接触连接。