公开(公告)号：US20060191482A1

公开(公告)日：2006-08-31

申请号：US11074717

申请日：2005-03-09

申请人： Seiichiro Kanno ,  Junichi Tanaka ,  Go Miya ,  Tsunehiko Tsubone ,  Akitaka Makino ,  Toshio Masuda

发明人： Seiichiro Kanno ,  Junichi Tanaka ,  Go Miya ,  Tsunehiko Tsubone ,  Akitaka Makino ,  Toshio Masuda

IPC分类号： C23C16/00

CPC分类号： H01L21/32137 ,  H01J37/32935 ,  H01J37/3299 ,  H01J2237/2001 ,  H01L21/67069 ,  H01L21/67109

摘要： A wafer processing apparatus capable of obtaining a uniform CD distribution within a wafer is provided. The wafer processing apparatus comprises at least two separate circuits of temperature regulating means provided in a wafer stage, a plurality of cooling gas pressure regulating means for feeding cooling gas between the semiconductor wafer and the wafer stage, means for regulating heater input power, and a control computer. The control computer receives input of line width dimensions resulting from processes in an arbitrary plurality of temperature conditions obtained by changing at least one of the conditions of the temperature of the temperature regulating agent, the cooling gas pressure, and the input power of the heater. The line width dimensions are used to calculate, and control, at least one of the temperature of the temperature regulating agent, the cooling gas pressure, and the input power of the heater for obtaining an arbitrary etching line width dimension.

摘要翻译： 提供能够在晶片内获得均匀的CD分布的晶片处理装置。 晶片处理装置包括设置在晶片台中的温度调节装置的至少两个分离电路，用于在半导体晶片和晶片台之间供给冷却气体的多个冷却气体压力调节装置，用于调节加热器输入功率的装置和 控制电脑。 控制计算机接收由通过改变温度调节剂的温度，冷却气体压力和加热器的输入功率的至少一个条件而获得的任意多个温度条件下的处理产生的线宽尺寸的输入。 线宽尺寸用于计算和控制温度调节剂的温度，冷却气体压力和加热器的输入功率中的至少一个，以获得任意的蚀刻线宽度尺寸。

公开(公告)号：US07048869B2

公开(公告)日：2006-05-23

申请号：US09414520

申请日：1999-10-08

申请人： Kazue Takahashi ,  Toshio Masuda ,  Tetsunori Kaji ,  Ken'etsu Yokogawa

发明人： Kazue Takahashi ,  Toshio Masuda ,  Tetsunori Kaji ,  Ken'etsu Yokogawa

IPC分类号： B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  H05H1/26

CPC分类号： H01J37/32522 ,  H01J37/32192 ,  H01J37/32678 ,  H01L21/31116

摘要： In an oxide film etching process, a plasma having a suitable ratio of CF3, CF2, CF, F is necessary, and there is a problem in that the etching characteristic fluctuates with a temperature fluctuation of the etching chamber. Using a UHF type ECR plasma etching apparatus having a low electron temperature, a suitable dissociation can be obtained, and by maintaining the temperature of a side wall from 10° C. and 120° C., a stable etching characteristic can be obtained. Since oxide film etching using a low electron temperature and a high density plasma can be obtained, an etching result having a superior characteristic can be obtained, and, also, since the side wall temperature adjustment range is low, a simplified apparatus structure and a heat resistant performance countermeasure can be obtained easily.

摘要翻译： 在氧化膜蚀刻工艺中，需要具有CF 3，CF 2，CF，F的适当比例的等离子体，并且存在的问题在于，蚀刻特性 随着蚀刻室的温度波动而波动。 使用具有低电子温度的UHF型ECR等离子体蚀刻装置，可以获得适当的解离，并且通过将侧壁的温度保持在10℃和120℃，可以获得稳定的蚀刻特性。 由于可以获得使用低电子温度和高密度等离子体的氧化膜蚀刻，因此可以获得具有优异特性的蚀刻结果，并且由于侧壁温度调节范围低，因此简化的装置结构和热 可以容易地获得耐性性能对策。

公开(公告)号：US20050099524A1

公开(公告)日：2005-05-12

申请号：US10981785

申请日：2004-11-05

申请人： Makoto Mogamiya ,  Toshio Masuda

发明人： Makoto Mogamiya ,  Toshio Masuda

IPC分类号： G03B7/00 ,  G02B7/08 ,  G02B23/00 ,  G03B3/02 ,  G03B13/32 ,  G03B13/36 ,  G03B15/00 ,  G03B17/48 ,  H04N5/232 ,  H04N9/04

CPC分类号： H04N9/045

摘要： An optical instrument, which includes an imaging optical system, an imaging device, a focus driving system that relatively moves an image forming position of the object image with respect to a receiving surface of the imaging device, and a controller that controls the imaging device and the focus driving system. The controller obtains., in one shooting operation, continuously a normal photographing image and at least one focus corrected:image which is captured when an object image of a certain color component is properly focused on the receiving surface of the imaging device. Light of the certain color component causes a longitudinal spherical aberration when passing through the imaging optical system.

摘要翻译： 一种光学仪器，包括成像光学系统，成像装置，相对于成像装置的接收表面相对移动对象图像的图像形成位置的对焦驱动系统，以及控制成像装置和 重点驱动系统。 控制器在一次拍摄操作中获得连续的正常拍摄图像和至少一个对焦校正：当特定颜色分量的对象图像适当地聚焦在成像装置的接收表面上时捕获的图像。 该特定颜色成分的光在通过成像光学系统时产生纵向球面像差。

公开(公告)号：US06828165B2

公开(公告)日：2004-12-07

申请号：US10438842

申请日：2003-05-16

申请人： Junichi Tanaka ,  Hiroyuki Kitsunai ,  Akira Kagoshima ,  Daisuke Shiraishi ,  Hideyuki Yamamoto ,  Shoji Ikuhara ,  Toshio Masuda

发明人： Junichi Tanaka ,  Hiroyuki Kitsunai ,  Akira Kagoshima ,  Daisuke Shiraishi ,  Hideyuki Yamamoto ,  Shoji Ikuhara ,  Toshio Masuda

IPC分类号： H01L2166

CPC分类号： H01L22/20 ,  G05B13/048 ,  G05B19/41865 ,  G05B23/024 ,  G05B2219/31357 ,  G05B2219/32058 ,  H01L21/67276 ,  H01L2924/0002 ,  Y02P90/12 ,  Y02P90/14 ,  Y02P90/18 ,  Y02P90/20 ,  H01L2924/00

摘要： A semiconductor plasma processing apparatus for processing a semiconductor wafer includes a sensor for monitoring at least one processing state of the semiconductor plasma processing apparatus, first and second processing state monitoring units coupled to the sensor, and a selector unit for selecting one of the first and second processing state monitoring units.

摘要翻译： 一种用于处理半导体晶片的半导体等离子体处理装置，包括用于监视半导体等离子体处理装置的至少一个处理状态的传感器，耦合到传感器的第一和第二处理状态监控单元，以及选择器单元，用于选择第一和第 第二处理状态监控单元。

公开(公告)号：US06796269B2

公开(公告)日：2004-09-28

申请号：US10229027

申请日：2002-08-28

申请人： Ichiro Sasaki ,  Toshio Masuda ,  Muneo Furuse ,  Hideyuki Yamamoto

发明人： Ichiro Sasaki ,  Toshio Masuda ,  Muneo Furuse ,  Hideyuki Yamamoto

IPC分类号： C23C16509

CPC分类号： H01J37/32009 ,  H01J37/32935

摘要： The present apparatus comprises a vacuum process chamber 100 that contains an upper electrode 110 having a conductive plate 115 with gas supply holes for supplying a process gas and a lower electrode 130 having a platform on which a sample is to be mounted; process gas supply means 117 for supplying the process gas to the gas supply holes in the upper electrode 110 and exhaust means 106 for exhausting the vacuum process chamber; a high frequency power supply 121 for applying a high frequency power to the upper electrode to generate a plasma between the upper and lower electrodes; a high frequency bias power supply 122 for applying a high frequency power to the upper electrode to generate a direct current bias potential in the upper electrode; and abnormal discharge determination means 152 for determining whether an abnormal discharge has occurred or not based on the direct current bias potential generated in the upper electrode.

摘要翻译： 本装置包括真空处理室100，其包含具有导电板115的上电极110，该导电板115具有用于供应处理气体的气体供应孔和具有其上将要安装样品的平台的下电极130; 用于将处理气体供给到上电极110中的气体供给孔和用于排出真空处理室的排气装置106的处理气体供给装置117; 用于向上部电极施加高频电力以在上部电极和下部电极之间产生等离子体的高频电源121; 用于向上部电极施加高频电力以在上部电极中产生直流偏置电位的高频偏置电源122; 以及异常放电判定单元152，用于根据在上部电极中产生的直流偏置电位来判定是否发生异常放电。

公开(公告)号：US06733618B2

公开(公告)日：2004-05-11

申请号：US09946503

申请日：2001-09-06

申请人： Akira Kagoshima ,  Hideyuki Yamamoto ,  Shoji Ikuhara ,  Toshio Masuda ,  Hiroyuki Kitsunai ,  Junichi Tanaka ,  Natsuyo Morioka ,  Kenji Tamaki

发明人： Akira Kagoshima ,  Hideyuki Yamamoto ,  Shoji Ikuhara ,  Toshio Masuda ,  Hiroyuki Kitsunai ,  Junichi Tanaka ,  Natsuyo Morioka ,  Kenji Tamaki

IPC分类号： C23F100

CPC分类号： H01L22/20 ,  G05B19/41875 ,  G05B2219/45031 ,  H01J37/32935 ,  H01L22/26 ,  Y02P90/20 ,  Y02P90/22

摘要： A plasma processing control system and method which can suppress influences caused by disturbances. The control system includes a plasma processor for performing processing operation over a sample accommodated within a vacuum processing chamber, a sensor for monitoring process parameters during processing operation of the plasma processor, a processed-result estimation model for estimating a processed result on the basis of a monitored output of the sensor and a preset processed-result prediction equation, and an optimum recipe calculation model for calculating correction values of processing conditions on the basis of an estimated result of the processed-result estimation model in such a manner that the processed result becomes a target value. The plasma processor is controlled on the basis of a recipe generated by the optimum recipe calculation model.

摘要翻译： 一种可以抑制由干扰引起的影响的等离子体处理控制系统和方法。 控制系统包括：等离子体处理器，用于对容纳在真空处理室内的样品执行处理操作，用于在等离子体处理器的处理操作期间监视处理参数的传感器，用于基于等离子体处理器估计处理结果的处理结果估计模型 传感器的监视输出和预设处理结果预测方程，以及用于基于处理结果估计模型的估计结果计算处理条件的校正值的最佳配方计算模型，使得处理结果 成为目标值。 基于由最佳配方计算模型生成的配方来控制等离子体处理器。

公开(公告)号：US06706543B2

公开(公告)日：2004-03-16

申请号：US10196208

申请日：2002-07-17

申请人： Junichi Tanaka ,  Hiroyuki Kitsunai ,  Akira Kagoshima ,  Daisuke Shiraishi ,  Hideyuki Yamamoto ,  Shoji Ikuhara ,  Toshio Masuda

发明人： Junichi Tanaka ,  Hiroyuki Kitsunai ,  Akira Kagoshima ,  Daisuke Shiraishi ,  Hideyuki Yamamoto ,  Shoji Ikuhara ,  Toshio Masuda

IPC分类号： H01L2166

CPC分类号： H01L22/20 ,  G05B13/048 ,  G05B19/41865 ,  G05B23/024 ,  G05B2219/31357 ,  G05B2219/32058 ,  H01L21/67276 ,  H01L2924/0002 ,  Y02P90/12 ,  Y02P90/14 ,  Y02P90/18 ,  Y02P90/20 ,  H01L2924/00

摘要： A method and system are provided for controlling and/or monitoring a semiconductor processing apparatus while predicting its processing results. The system includes a sensor for monitoring a processing state of the processing apparatus, a sensed data storage unit for preserving sensed data sent from the sensor, an input device for inputting measured values for processing results of semiconductor devices processed by the processing apparatus, a processing result measured value storage unit for preserving the inputted processing result measured values, a model equation generation unit for generating a model equation from preserved sensed data and processing result measured values, a model equation storage unit for preserving the generated model equation, a model equation based prediction unit for predicting processing results from the preserved model equation and the sensed data, and a process recipe control unit for controlling processing conditions of the processing apparatus from predicted processing results.

摘要翻译： 提供一种用于在预测其处理结果的同时控制和/或监视半导体处理装置的方法和系统。 该系统包括用于监视处理装置的处理状态的传感器，用于保存从传感器发送的感测数据的感测数据存储单元，用于输入用于处理由处理装置处理的半导体装置的处理结果的测量值的输入装置， 结果测量值存储单元，用于保存输入的处理结果测量值;模型方程生成单元，用于从保存的感测数据和处理结果测量值生成模型方程;模型方程式存储单元，用于保存生成的模型方程;基于模型方程 预测单元，用于从保存的模型方程和感测数据预测处理结果;以及处理配方控制单元，用于根据预测的处理结果控制处理装置的处理条件。

公开(公告)号：US06533075B2

公开(公告)日：2003-03-18

申请号：US09958278

申请日：2001-10-09

申请人： Toshio Masuda

发明人： Toshio Masuda

IPC分类号： B66B118

CPC分类号： B66B1/3453 ,  B66B1/18 ,  B66B1/34 ,  B66B1/3415 ,  B66B1/3423 ,  B66B1/3446 ,  B66B2201/4623 ,  B66B2201/463

摘要： An elevator group supervisory control system includes individual car control units which individually control elevator units, hall control units which control hall equipment including hall call buttons provided on each floor, a group supervisory control unit which processes assignment of elevators based on hall information transmitted from the plurality of hall control units, and a communication control unit having an independent power supply for each individual car control unit, the communication control unit being connected with a corresponding individual car control unit, a corresponding hall control unit, and the group a supervisory control unit for, data communications. The transmission paths of the communication control units and the group supervisory control unit are connected with each other through buses to constitute the elevator group supervisory control system. Thus, communications between the hall control units and the group supervisory control unit become effective even if the individual car control units are down, as a result of which it becomes unnecessary to connect the hall call buttons with the hall control units for backup purposes, simplifying arrangement of connections.

摘要翻译： 电梯组管理控制系统包括单独控制电梯单元的单独的轿厢控制单元，控制每个楼层上设置的门厅呼叫按钮的厅厅设备的门厅控制单元，基于从所述电梯单元发送的门厅信息来处理电梯的分配的组管理控制单元 多个门厅控制单元和具有用于每个单独的轿厢控制单元的独立电源的通信控制单元，所述通信控制单元与相应的单独的轿厢控制单元，相应的门厅控制单元连接，并且所述组是监视控制单元 数据通信。 通信控制单元和组监控单元的传输路径通过总线相互连接，构成电梯组监控系统。 因此，即使各个轿厢控制单元关闭，霍尔控制单元和群组管理单元之间的通信变得有效，结果不需要将门厅呼叫按钮与门厅控制单元连接起来用于备份，简化 安排连接。

公开(公告)号：US06506686B2

公开(公告)日：2003-01-14

申请号：US09790702

申请日：2001-02-23

申请人： Toshio Masuda ,  Kazue Takahashi ,  Ryoji Fukuyama ,  Tomoyuki Tamura

发明人： Toshio Masuda ,  Kazue Takahashi ,  Ryoji Fukuyama ,  Tomoyuki Tamura

IPC分类号： H01L2100

CPC分类号： H01J37/32082 ,  H01J37/3266 ,  H01J37/32697

摘要： In a plasma processing apparatus that has a vacuum chamber, a process gas supply means of supply gas to a processing chamber, an electrode to hold a sample inside said vacuum chamber, a plasma generator installed in said vacuum chamber opposite to said sample, and a vacuum exhaust system to decrease pressure of said vacuum chamber, a bias voltage of Vdc=−300 to −50 V is applied and the surface temperature of said plate ranges from 100 to 200° C. In addition, the surface temperature fluctuation of the silicon-made plate in said plasma processing apparatus is kept within ±25° C.

摘要翻译： 在具有真空室的等离子体处理装置中，向处理室供给气体的处理气体供给单元，将真空室内的样品保持的电极，安装在与所述样品相对的所述真空室内的等离子体发生器， 真空排气系统减小所述真空室的压力，施加Vdc = -300至-50V的偏置电压，并且所述板的表面温度为100至200℃。此外，硅的表面温度波动 所述等离子体处理装置中制成的板保持在±25℃

公开(公告)号：US06245190B1

公开(公告)日：2001-06-12

申请号：US09048075

申请日：1998-03-26

申请人： Toshio Masuda ,  Katsuhiko Mitani ,  Tetsunori Kaji ,  Jun'ichi Tanaka ,  Katsuya Watanabe ,  Shigeru Shirayone ,  Toru Otsubo ,  Ichiro Sasaki ,  Hideshi Fukumoto ,  Makoto Koizumi

发明人： Toshio Masuda ,  Katsuhiko Mitani ,  Tetsunori Kaji ,  Jun'ichi Tanaka ,  Katsuya Watanabe ,  Shigeru Shirayone ,  Toru Otsubo ,  Ichiro Sasaki ,  Hideshi Fukumoto ,  Makoto Koizumi

IPC分类号： H05H146

CPC分类号： H01J37/32091 ,  H01J37/32082 ,  H01J37/32165 ,  H01J37/32623 ,  H01J37/3266 ,  H01J37/32678

摘要： A plasma processing apparatus and a method therefor which can achieve a preferred process rate, a fine pattern process capability, a selectivity and uniformity of processing at the same time compatibly for a large size wafer, which effects are achieved by controlling the plasma state and the dissociation state of etching gas through control of the electron resonance through application of a magnetic field thereto. A high frequency power at 20-300 MHz is applied across a pair of electrodes in a vacuum process chamber, and a magnetic field is formed parallel to the plane of the electrodes in the space between the electrodes. By controlling the intensity of the magnetic field in a range of 100 gauss or smaller, formation of electron cyclotron resonance and electron sheath resonance occurring from interaction between the electrical field and the magnetic field in the electrode sheath portion is controlled. Thereby, the plasma state, i.e., the electron density, electron energy distribution and dissociation state of the process gas in the plasma, can be controlled. The magnetic field is generated by a plurality of coils, an outer shield, and pendant yoke to form magnetic field parallel to the plane of the electrodes in the space between the upper and the bottom electrodes.

摘要翻译： 一种等离子体处理装置及其方法，其能够通过控制等离子体状态和等离子体状态来实现对于大尺寸晶片同时实现优选的处理速率，精细图案处理能力，同时处理的选择性和均匀性， 通过对其施加磁场来控制电子共振来蚀刻气体的解离状态。 在真空处理室中的一对电极上施加20-300MHz的高频功率，并且在电极之间的空间中形成平行于电极平面的磁场。 通过控制100高斯或更小范围内的磁场的强度，控制由电场鞘部分中的电场和磁场之间的相互作用产生的电子回旋共振和电子鞘共振的形成。 由此，可以控制等离子体状态，即等离子体中的处理气体的电子密度，电子能量分布和解离状态。 磁场由多个线圈，外屏蔽和悬挂磁轭产生，以在上电极和下电极之间的空间中形成平行于电极平面的磁场。