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40 条记录 (耗时 0.045 秒)

    SPLITTABLE CONJUGATE FIBER, FIBER STRUCTURE USING THE SAME AND WIPING CLOTH
    35.
    发明申请
    SPLITTABLE CONJUGATE FIBER, FIBER STRUCTURE USING THE SAME AND WIPING CLOTH 审中-公开
    可分离的连接纤维，使用其的纤维结构和织物

    公开(公告)号：US20100112325A1

    公开(公告)日：2010-05-06

    申请号：US12595873

    申请日：2008-04-17

    申请人： Hayato Iwamoto ,  Shinji Yoshida ,  Satoshi Kishi ,  Toru Ito

    发明人： Hayato Iwamoto ,  Shinji Yoshida ,  Satoshi Kishi ,  Toru Ito

    IPC分类号： B32B5/02 ,  B65B7/00 ,  D02G3/04 ,  D02G3/02 ,  D01F6/00

    CPC分类号： D01F8/12 ,  A47L13/16 ,  Y10T428/249921 ,  Y10T428/2929

    摘要： A splittable conjugate fiber for obtaining a fiber structure excellent in denseness and bulkiness includes a polyamide resin composition and a fiber-forming polymer not having an affinity with the polyamide resin composition. The polyamide resin composition and the fiber-forming polymer are combined with each other in a fiber longitudinal direction. The polyamide resin composition contains aromatic polyamide and aliphatic polyamide. Preferably, the aromatic polyamide is a nylon MXD6 polymer, and the aliphatic polyamide is a nylon 6 polymer.

    摘要翻译： 用于获得致密度和蓬松度优异的纤维结构的可分裂复合纤维包括聚酰胺树脂组合物和与聚酰胺树脂组合物不具有亲和性的成纤聚合物。 聚酰胺树脂组合物和纤维形成性聚合物在纤维长度方向上相互结合。 聚酰胺树脂组合物含有芳香族聚酰胺和脂肪族聚酰胺。 优选地，芳族聚酰胺是尼龙MXD6聚合物，并且脂族聚酰胺是尼龙6聚合物。

    SPLITTABLE CONJUGATE FIBER
    36.
    发明申请
    SPLITTABLE CONJUGATE FIBER 审中-公开
    可分离的连接纤维

    公开(公告)号：US20100047573A1

    公开(公告)日：2010-02-25

    申请号：US12593959

    申请日：2007-04-11

    申请人： Hayato Iwamoto

    发明人： Hayato Iwamoto

    IPC分类号： D01F8/12

    CPC分类号： D01F8/12 ,  D01D5/30 ,  Y10T428/2929

    摘要： A splittable conjugate fiber that provides a fiber structure with enhanced compactness, bulkiness and color formation has one member consisting of a polyamide resin composition containing an aromatic polyamide and an aliphatic polyamide and has another member consisting of a fiber forming polymer with no affinity to the polyamide resin composition. Preferably, the aromatic polyamide is a polyamide whose major structural units are composed of an aliphatic dicarboxylic acid and an aromatic diamine. In further preferred modes, the polyamide resin composition consists of nylon-MXD6 and nylon-6, the weight ratio therebetween ranging from 35:65 to 70:30, and the fiber forming polymer is a polyester or polyolefin.

    摘要翻译： 提供具有增强的致密性，蓬松性和成色性的纤维结构的可裂合成纤维具有由含有芳族聚酰胺和脂肪族聚酰胺的聚酰胺树脂组合物构成的成员，并且具有由与聚酰胺无亲合性的形成纤维的聚合物组成的另一部件 树脂组合物。 优选地，芳族聚酰胺是主要结构单元由脂肪族二羧酸和芳香族二胺构成的聚酰胺。 在另外的优选方式中，聚酰胺树脂组合物由尼龙-MXD6和尼龙-6组成，其重量比在35:65至70:30之间，并且成纤聚合物是聚酯或聚烯烃。

    METHOD OF AND APPARATUS FOR CLEANING SUBSTRATE
    37.
    发明申请
    METHOD OF AND APPARATUS FOR CLEANING SUBSTRATE 有权
    清洗基板的方法和装置

    公开(公告)号：US20080295862A1

    公开(公告)日：2008-12-04

    申请号：US12124555

    申请日：2008-05-21

    申请人： Hayato Iwamoto ,  Noriaki Adachi

    发明人： Hayato Iwamoto ,  Noriaki Adachi

    IPC分类号： B08B3/08 ,  B08B13/00

    CPC分类号： H01L21/67057 ,  C11D7/06 ,  C11D7/08 ,  C11D11/0047 ,  C11D11/0064 ,  H01L21/02052 ,  H01L21/67253 ,  H01L22/14 ,  Y10S134/902

    摘要： A substrate cleaning apparatus is capable of individually setting a threshold value for use in making a check of a resistivity during a rinsing process on a recipe setting screen in each process step. Thus, by setting each threshold value depending on the type of liquid chemical to be used immediately before the rinsing process, the substrate cleaning apparatus can use an optimum threshold value during the rinsing process in each process step to make a check of the resistivity. This allows the proper completion of the rinsing process in each process step.

    摘要翻译： 基板清洁装置能够在每个处理步骤中在配方设置屏幕上单独设置用于在冲洗过程中检查电阻率的阈值。 因此，通过根据在冲洗处理之前立即使用的液体化学品的类型设定每个阈值，基板清洁装置可以在每个处理步骤中的漂洗处理期间使用最佳阈值来检查电阻率。 这允许在每个处理步骤中适当地完成漂洗过程。

    Etching method and etching device
    38.
    发明授权
    Etching method and etching device 失效
    蚀刻方法和蚀刻装置

    公开(公告)号：US07252778B2

    公开(公告)日：2007-08-07

    申请号：US10839404

    申请日：2004-05-05

    申请人： Hayato Iwamoto ,  Kei Kinoshita ,  Hajime Ugajin

    发明人： Hayato Iwamoto ,  Kei Kinoshita ,  Hajime Ugajin

    IPC分类号： B44C1/22

    CPC分类号： H01L21/31111

    摘要： An etching method and etching device are provided, enabling uniform rendering of the thickness of a film for processing on a wafer regardless of the film thickness profile thereof, and thereby enabling global planarizing of the wafer surface. In an etching method, the film thickness profile of the film for processing formed on the wafer is ascertained in advance, and wet etching is performed by discharging an etchant liquid L1 at a thick portion of the film for processing; simultaneously with the discharge of the etchant liquid L1, a diluting liquid L2 for the etchant liquid L1 is discharged at a thin portion of the film for processing.

    摘要翻译： 提供了一种蚀刻方法和蚀刻装置，能够均匀地渲染用于在晶片上进行处理的膜的厚度，而与其膜厚轮廓无关，从而使得晶片表面能够全局平坦化。 在蚀刻方法中，预先确定在晶片上形成的用于加工的膜的膜厚分布，并且通过在用于处理的膜的厚部排出蚀刻剂液体L 1来进行湿蚀刻; 与蚀刻剂液体L 1的排出同时，用于蚀刻剂液体L 1的稀释液体L 2在薄膜的一部分被排出以进行处理。

    Method for forming capacitor
    39.
    发明授权
    Method for forming capacitor 失效
    电容器形成方法

    公开(公告)号：US06818502B2

    公开(公告)日：2004-11-16

    申请号：US10774213

    申请日：2004-02-06

    申请人： Tomoyuki Hirano ,  Hayato Iwamoto

    发明人： Tomoyuki Hirano ,  Hayato Iwamoto

    IPC分类号： H01L21302

    CPC分类号： H01L28/84 ,  H01L21/02068 ,  H01L27/10852 ,  H01L28/91

    摘要： The invention provides a method for forming a capacitor that enables to form HSG-Si on the entire surface of the exposed surface of a cylindrical bottom electrode. A core pattern is formed on the cylinder core layer on a semiconductor substrate, and an amorphous silicon film is formed so as to cover the core pattern. The amorphous silicon film on the cylinder core layer is removed so that the amorphous silicon film remains on the inside wall of the core pattern, and a bottom electrode comprising the amorphous silicon film is formed on the inside wall of the core pattern. The cylinder core layer that is the component of the core pattern is etching-removed, and then the natural oxide film generated on the surface of the bottom electrode and the amorphous silicon surface layer that is the component of the bottom electrode is etching-removed. Thereafter, HSG-Si is formed on the surface of the bottom electrode.

    摘要翻译： 本发明提供一种用于形成电容器的方法，该电容器能够在圆柱形底部电极的暴露表面的整个表面上形成HSG-Si。 在半导体衬底上的圆筒芯层上形成芯图案，并且形成非晶硅膜以覆盖芯图案。 除去气缸芯层上的非晶硅膜，使得非晶硅膜保留在芯图案的内壁上，并且在芯图案的内壁上形成包含非晶硅膜的底电极。 蚀刻除去作为芯图案的组分的圆筒芯层，然后蚀刻除去在底电极表面上产生的天然氧化物膜和作为底电极的成分的非晶硅表面层。 此后，在底电极的表面上形成HSG-Si。

    Chemical treatment apparatus and chemical treatment method
    40.
    发明授权
    Chemical treatment apparatus and chemical treatment method 有权
    化学处理装置及化学处理方法

    公开(公告)号：US06281137B1

    公开(公告)日：2001-08-28

    申请号：US09694980

    申请日：2000-10-24

    申请人： Hayato Iwamoto ,  Kiyoshi Kurosawa

    发明人： Hayato Iwamoto ,  Kiyoshi Kurosawa

    IPC分类号： H01L21302

    CPC分类号： H01L21/67086 ,  B08B3/102 ,  H01L21/67051 ,  H01L21/67057 ,  H01L21/6708

    摘要： A chemical treatment apparatus including a treatment tank filled with chemical with which wafers are treated, and a jet pipe having chemical jetting holes which is provided at the bottom portion of the treatment tank and jets the chemical from the jetting holes thereof, the jetting holes containing at least first jetting holes for jetting the chemical upwardly and second jetting holes for jetting the chemical in a direction different from that of the first holes. The second direction is set to a direction within the range from the horizontal direction of the jet pipe to the obliquely downward direction at 45 degrees with respect to the horizontal direction.

    摘要翻译： 一种化学处理设备，其包括填充有待处理晶片的化学品的处理槽，以及设置在处理槽底部的化学喷射孔的喷射管，并且喷射来自其喷射孔的化学物质，喷射孔包含 至少第一喷射孔用于喷射化学物向上和第二喷射孔，用于沿与第一孔不同的方向喷射化学物质。 第二方向设定为相对于水平方向成45度的从喷射管的水平方向向斜下方的范围内的方向。