公开(公告)号：US07456400B2

公开(公告)日：2008-11-25

申请号：US11235458

申请日：2005-09-26

申请人： Masatsugu Shigeno ,  Yoshiharu Shirakawabe ,  Amiko Nihei ,  Osamu Matsuzawa ,  Naoya Watanabe ,  Akira Inoue

发明人： Masatsugu Shigeno ,  Yoshiharu Shirakawabe ,  Amiko Nihei ,  Osamu Matsuzawa ,  Naoya Watanabe ,  Akira Inoue

IPC分类号： G12B21/00

CPC分类号： G01Q60/32 ,  G01Q10/06 ,  Y10S977/849 ,  Y10S977/851 ,  Y10S977/852 ,  Y10S977/86 ,  Y10S977/872

摘要： A scanning probe microscope has a probe needle and a control section that controls relative scanning movement between the probe needle and a surface of a sample in at least one direction parallel to the sample surface and controls relative movement between the probe needle and the sample surface in a direction perpendicular to the sample surface. A vibration source vibrates the probe needle at a vibrating frequency relative to the sample surface. An approach/separation drive section causes the probe needle to relatively approach to and separate from the sample surface at a predetermined distance while the probe needle is vibrated at the vibrating frequency relative to the sample surface by the vibration source. A detection section detects a rate of change in a vibration state of the probe needle in accordance with a distance between the probe needle and the sample surface. An observation section gathers observation data from the sample surface when the rate of change in the vibration state of the probe needle detected by the detection section has exceeded a preselected threshold value.

摘要翻译： 扫描探针显微镜具有探针和控制部，其控制探针和样品表面之间的平行于样品表面的至少一个方向上的相对扫描运动，并且控制探针与样品表面之间的相对运动 垂直于样品表面的方向。 振动源以相对于样品表面的振动频率振动探针。 接近/分离驱动部分使得探针相对于样品表面以预定距离相对接近和分离，同时探针以振动源相对于样品表面的振动频率振动。 检测部根据探针与样本面的距离来检测探针的振动状态的变化率。 当由检测部检测到的探针的振动状态的变化率超过预选阈值时，观察部分从样本表面收集观察数据。

公开(公告)号：US07373077B2

公开(公告)日：2008-05-13

申请号：US11112399

申请日：2005-04-22

申请人： Mototsugu Abe ,  Akira Inoue ,  Jun Matsumoto ,  Koji Suginuma ,  Masayuki Nishiguchi

发明人： Mototsugu Abe ,  Akira Inoue ,  Jun Matsumoto ,  Koji Suginuma ,  Masayuki Nishiguchi

IPC分类号： H04N7/00 ,  H04N7/64

CPC分类号： G11B15/026 ,  G11B5/0086 ,  G11B5/531 ,  G11B15/125 ,  G11B15/1875 ,  G11B20/10527 ,  G11B20/1201 ,  G11B20/18 ,  G11B20/1876 ,  G11B2020/10546 ,  H04N5/78213 ,  H04N5/78263 ,  H04N5/783 ,  H04N9/8063

摘要： An audio signal processing method for repairing an anomalous state such as noise, a discontinuity, and a break of sound, comprising detecting the anomalous state of an audio signal, deleting the audio signal in the anomalous segment, deducing the correct audio signal by referring to the waveform of the audio signal before and after the deleted segment, generating a repair signal for repairing the signal in the deleted segment based on the deduced result, inserting the repair signal into the deleted segment, and connecting it to the audio signal before and after the deleted segment.

摘要翻译： 一种音频信号处理方法，用于修复诸如噪声，不连续性和中断声音的异常状态，包括检测音频信号的异常状态，删除异常段中的音频信号，通过参考以下内容推导出正确的音频信号 在删除段之前和之后的音频信号的波形，基于推导结果生成用于修复被删除段中的信号的修复信号，将修复信号插入到删除的段中，并将其连接到前后的音频信号 已删除的段。

公开(公告)号：US07356476B2

公开(公告)日：2008-04-08

申请号：US11112370

申请日：2005-04-22

申请人： Mototsugu Abe ,  Akira Inoue ,  Jun Matsumoto ,  Koji Suginuma ,  Masayuki Nishiguchi

发明人： Mototsugu Abe ,  Akira Inoue ,  Jun Matsumoto ,  Koji Suginuma ,  Masayuki Nishiguchi

IPC分类号： G10L11/00 ,  G10L19/00 ,  G10L21/00

CPC分类号： G11B15/026 ,  G11B5/0086 ,  G11B5/531 ,  G11B15/125 ,  G11B15/1875 ,  G11B20/10527 ,  G11B20/1201 ,  G11B20/18 ,  G11B20/1876 ,  G11B2020/10546 ,  H04N5/78213 ,  H04N5/78263 ,  H04N5/783 ,  H04N9/8063

摘要： An audio signal processing method for repairing an anomalous state such as noise, a discontinuity, and a break of sound, comprising detecting the anomalous state of an audio signal, deleting the audio signal in the anomalous segment, deducing the correct audio signal by referring to the waveform of the audio signal before and after the deleted segment, generating a repair signal for repairing the signal in the deleted segment based on the deduced result, inserting the repair signal into the deleted segment, and connecting it to the audio signal before and after the deleted segment.

公开(公告)号：US07327428B2

公开(公告)日：2008-02-05

申请号：US10928447

申请日：2004-08-30

申请人： Katsunori Yamazaki ,  Eiji Okamoto ,  Tsuyoshi Maeda ,  Kimitaka Kamijo ,  Daisuke Nagano ,  Takumi Seki ,  Akira Inoue

发明人： Katsunori Yamazaki ,  Eiji Okamoto ,  Tsuyoshi Maeda ,  Kimitaka Kamijo ,  Daisuke Nagano ,  Takumi Seki ,  Akira Inoue

IPC分类号： G02F1/1343

CPC分类号： G02F1/134363 ,  G02F1/1365

摘要： To simplify a manufacturing process of a transverse electric field mode liquid crystal display device by using a non-linear resistance element such as a TFD (Thin Film Diode) as a switching element. In a liquid crystal display device having a pair of substrates with liquid crystal interposed therebetween, one of the substrates consists of an electrode substrate. On the electrode substrate, there are provided a first group of electrodes, a second group of electrodes crossing the first group of electrodes with an insulating layer interposed therebetween, non-linear resistance elements, one end of each of the non-linear resistance elements being connected to the respective one of the second group of electrodes, and pixel electrodes opposing the first group of electrodes, each pixel electrode being connected to the other end of each of the non-linear resistance elements. Since the non-linear resistance elements have a so-called TFD (MIM) structure made of metal-insulating layer-metal, the manufacturing process is simple. Therefore, it is possible to manufacture the transverse electric field mode display device at low cost.

摘要翻译： 为了简化通过使用诸如TFD（薄膜二极管）之类的非线性电阻元件作为开关元件的横向电场模式液晶显示装置的制造过程。 在具有插入液晶的一对基板的液晶显示装置中，一个基板由电极基板构成。 在电极基板上设置有第一组电极，与第一组电极交叉的第二组电极，绝缘层插入其间，非线性电阻元件，每个非线性电阻元件的一端为 连接到第二组电极中的相应一个，以及与第一组电极相对的像素电极，每个像素电极连接到每个非线性电阻元件的另一端。 由于非线性电阻元件具有由金属绝缘层金属制成的所谓的TFD（MIM）结构，所以制造工艺简单。 因此，可以以低成本制造横电场模式显示装置。

公开(公告)号：US20070272125A1

公开(公告)日：2007-11-29

申请号：US11802651

申请日：2007-05-24

申请人： Atsushi Endo ,  Takeshi Sato ,  Akira Inoue

发明人： Atsushi Endo ,  Takeshi Sato ,  Akira Inoue

IPC分类号： C08K5/00 ,  C09B27/00

CPC分类号： C09B29/334 ,  C09B67/002 ,  C09B67/0022

摘要： A pigment composition can be prepared by wet or dry milling a pigment selected from the group consisting of dianthraquinone pigments, diketopyrrolopyrrole pigments and a mixture thereof, in the presence of a compound represented by Formula 1: where Q denotes —NH(CH2)nNR1(R2) group or hydroxyl group, and R denotes —NH(CH2)nNR1(R2) group.

摘要翻译： 颜料组合物可以通过湿式或干式研磨选自二蒽醌颜料，二酮吡咯并吡咯颜料及其混合物的颜料在式1表示的化合物存在下制备：其中Q表示-NH（CH 2） （R 2）N或NR 2（R 2）基团或羟基，R表示-NH（CH 2）2 （R 2）N 2 NR 1（R 2）2基团。

公开(公告)号：US07249937B2

公开(公告)日：2007-07-31

申请号：US10498476

申请日：2003-10-30

申请人： Akira Inoue ,  Seigo Yanase ,  Ikutomo Umeoka ,  Atsushi Naruse

发明人： Akira Inoue ,  Seigo Yanase ,  Ikutomo Umeoka ,  Atsushi Naruse

IPC分类号： F04B17/00

CPC分类号： F04B39/127 ,  F04B39/0044 ,  F04B39/121

摘要： A hermetic electric compressor including sealed container and coil spring provided for elastically supporting electric compression element housed in sealed container. A consideration has been made to avoid the coincidence in the resonance frequency between coil spring mounted with electric compression element and mechanical vibration caused by electric compression element, or a cavity formed in space. By so doing, creation of a resonation with coil spring is suppressed, and noises and vibrations with the hermetic electric compressors are reduced.

摘要翻译： 一种密封电动压缩机，包括密封容器和螺旋弹簧，用于弹性地支撑容纳在密封容器中的电动压缩元件。 已经考虑到避免安装有电压缩元件的螺旋弹簧与由电压缩元件引起的机械振动之间的谐振频率或在空间中形成的空腔中的谐振频率的一致性。 通过这样做，抑制了与螺旋弹簧的共振的产生，并且与密封电动压缩机的噪声和振动减小。

公开(公告)号：US20070145290A1

公开(公告)日：2007-06-28

申请号：US11586401

申请日：2006-10-25

申请人： Masatsugu Shigeno ,  Akira Inoue

发明人： Masatsugu Shigeno ,  Akira Inoue

IPC分类号： G21K5/10

CPC分类号： G01Q30/14

摘要： A liquid cell 1 for fixing a sample S in a condition in which the sample S is dipped in a solution W, including a lower mount 2 including a bottom plate 10 having a mounting surface 10a on which the sample is mounted, and a wall section 11 disposed on the bottom plate so as to surround the periphery of the mounted sample and capable of trapping the solution inside the surrounded area, an upper mount 3 including an upper plate 20 abutting on an upper surface of the wall section, and a flange section 21 formed so as to be bent from an outer edge of the upper plate at an angle of substantially 90 degrees, and abutting on an outer peripheral surface of the wall section, the upper mount being capable of fitting to the lower mount from above, and a holding member 4 that abuts on an outer edge of the sample to press the sample against the mounting surface from above when the upper mount fits, wherein, an outer peripheral surface of the wall section and an inner circumferential surface of the flange section are provided with fitting means 5 that fits the upper mount to the lower mount while screwing the upper mount, is provided.

摘要翻译： 在将样品S浸渍在溶液W中的条件下固定样品S的液晶盒1，包括具有安装表面10a的底板10的下部安装件2和安装有样品的壁 第一部分11设置在底板上以围绕安装的样品的周边并且能够将溶液捕获在包围的区域内;上部支架3，其包括邻接在壁部的上表面上的上板20;以及凸缘 形成为以大致90度的角度从上板的外缘弯曲并且与壁部的外周面抵接的上部安装件能够从上方嵌入下部安装部的部分21， 以及保持构件4，该保持构件4抵接在样品的外边缘上，当上部安装件配合时将样品从上方按压在安装面上，其中，壁部的外周面和 凸缘部分设置有装配装置5，其在拧上上部支架的同时将上部支架安装到下部支架上。

公开(公告)号：US07205586B2

公开(公告)日：2007-04-17

申请号：US10851073

申请日：2004-05-24

申请人： Takeshi Takagi ,  Akira Inoue

发明人： Takeshi Takagi ,  Akira Inoue

IPC分类号： H01L31/072

CPC分类号： H01L29/1054 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/161 ,  H01L29/165 ,  H01L29/7782 ,  H01L29/783 ,  H01L29/78615 ,  H01L29/78648 ,  H01L29/78687

摘要： A HDTMOS includes a Si substrate, a buried oxide film and a semiconductor layer. The semiconductor layer includes an upper Si film, an epitaxially grown Si buffer layer, an epitaxially grown SiGe film, and an epitaxially grown Si film. Furthermore, the HDTMOS includes an n-type high concentration Si body region, an n− Si region, a SiGe channel region containing n-type low concentration impurities, an n-type low concentration Si cap layer, and a contact which is a conductor member for electrically connecting the gate electrode and the Si body region. The present invention extends the operation range while keeping the threshold voltage small by using, for the channel layer, a material having a smaller potential at the band edge where carriers travel than that of a material constituting the body region.

摘要翻译： HDTMOS包括Si衬底，掩埋氧化物膜和半导体层。 半导体层包括上硅膜，外延生长的Si缓冲层，外延生长的SiGe膜和外延生长的Si膜。 此外，HDTMOS包括n型高浓度Si体区域，n + Si区域，含有n型低浓度杂质的SiGe沟道区域，n型低浓度Si覆盖层， 以及作为用于电连接栅电极和Si体区的导体构件的接触。 本发明通过在沟道层使用载流子行进的带边缘处的电位较小的材料，而不是构成体区的材料的情况下，使阈值电压保持较小。

公开(公告)号：US07193472B2

公开(公告)日：2007-03-20

申请号：US11066765

申请日：2005-02-28

申请人： Seiki Gotou ,  Akira Inoue

发明人： Seiki Gotou ,  Akira Inoue

IPC分类号： H03F3/68

CPC分类号： H03F3/60 ,  H03F1/0288 ,  H03F3/604 ,  H05K1/05 ,  H05K1/141

摘要： In a power amplifier a Doherty amplifier is provided with an output higher harmonic reflection circuit that is connected to the output terminal of a first FET chip and sets an even-numbered higher harmonic load of an output signal at the output terminal to be a short-circuit, or at a low impedance approximating a short-circuit, and sets an odd-numbered higher harmonic load of an output signal at the output terminal to be an open-circuit, or a high impedance approximating an open-circuit.

摘要翻译： 在功率放大器中，Doherty放大器设置有输出高次谐波反射电路，其连接到第一FET芯片的输出端，并将输出端的输出信号的偶数高次谐波负载设置为短路， 或接近短路的低阻抗，并且将输出端子处的输出信号的奇数高次谐波负载设置为开路或接近开路的高阻抗。

公开(公告)号：US20060180833A1

公开(公告)日：2006-08-17

申请号：US10539006

申请日：2003-12-16

申请人： Akira Inoue ,  Masahiko Hata ,  Yasuyuki Kurita

发明人： Akira Inoue ,  Masahiko Hata ,  Yasuyuki Kurita

IPC分类号： H01L31/109

CPC分类号： H01L29/7371 ,  H01L29/0821

摘要： In an epitaxial substrate (20) comprising a collector layer (22), a base layer (23) and an emitter layer (24) formed on a semi-insulating GaAs substrate (21), a hole barrier layer (22C) is provided in the collector layer (22) to prevent influx of holes from the base layer (23), whereby the flow of collector current is suppressed when the collector current density rises and electron velocity is saturated, suppressing thermal runaway of the collector current without a ballast resistance or the like. Also, thermal runaway of the collector current is suppressed by providing an additional layer (2C) for generating, in the conduction band, an electron barrier by means of electrons accumulated in the collector layer (2) when the collector current density rises.

摘要翻译： 在包括集电极层（22），形成在半绝缘GaAs衬底（21）上的基极层（23）和发射极层（24））的外延衬底（20）中，提供了空穴阻挡层（22C） 在集电体层（22）中，为了防止从基底层（23）流入空穴，由此当集电极电流密度上升，电子速度饱和时，集电极电流的流动受到抑制，抑制了没有镇流器的集电极电流的热失控 电阻等。 此外，通过设置用于在集电极电流密度上升时通过积聚在集电极层（2）中的电子在导带中产生电子势垒的附加层（2C）来抑制集电极电流的热失控。