公开(公告)号：US20080057221A1

公开(公告)日：2008-03-06

申请号：US11639752

申请日：2006-12-15

申请人： John Boyd ,  Yezdi Dordi ,  Tiruchirapalli Arunagiri ,  Benjamin Mooring ,  John Parks ,  William Thie ,  Fritz Redeker ,  Arthur Howald ,  Alan Schoepp ,  David Hemker

发明人： John Boyd ,  Yezdi Dordi ,  Tiruchirapalli Arunagiri ,  Benjamin Mooring ,  John Parks ,  William Thie ,  Fritz Redeker ,  Arthur Howald ,  Alan Schoepp ,  David Hemker

IPC分类号： H05H1/24 ,  C23C16/00

CPC分类号： H01L21/67225 ,  H01L21/288 ,  H01L21/6704 ,  H01L21/67167 ,  H01L21/67184 ,  H01L21/6723 ,  H01L21/76849

摘要： A cluster architecture and methods for processing a substrate are disclosed. The cluster architecture includes a lab-ambient controlled transfer module that is coupled to one or more wet substrate processing modules. The lab-ambient controlled transfer module and the one or more wet substrate processing modules are configured to manage a first ambient environment. A vacuum transfer module that is coupled to the lab-ambient controlled transfer module and one or more plasma processing modules is also provided. The vacuum transfer module and the one or more plasma processing modules are configured to manage a second ambient environment. And, a controlled ambient transfer module that is coupled to the vacuum transfer module and one or more ambient processing modules is also included. The controlled ambient transfer module and the one or more ambient processing modules are configured to manage a third ambient environment. The cluster architecture therefore enables controlled processing of the substrate in either the first, second or third ambient environments, as well as during associated transitions.

摘要翻译： 公开了用于处理衬底的簇结构和方法。 集群架构包括耦合到一个或多个湿式衬底处理模块的实验室环境受控传输模块。 实验室环境控制传递模块和一个或多个湿式衬底处理模块被配置为管理第一环境环境。 还提供耦合到实验室环境受控传输模块和一个或多个等离子体处理模块的真空传输模块。 真空转移模块和一个或多个等离子体处理模块被配置成管理第二周边环境。 并且，还包括耦合到真空传输模块和一个或多个环境处理模块的受控环境转移模块。 受控环境传输模块和一个或多个环境处理模块被配置为管理第三环境环境。 因此，集群架构使得能够在第一，第二或第三环境环境中以及在相关联的转换期间对衬底进行受控处理。

公开(公告)号：US20100239767A1

公开(公告)日：2010-09-23

申请号：US12790558

申请日：2010-05-28

申请人： Yezdi Dordi ,  William Thie ,  John M. Boyd ,  Fritz C. Redeker ,  Aleksander Owczarz

发明人： Yezdi Dordi ,  William Thie ,  John M. Boyd ,  Fritz C. Redeker ,  Aleksander Owczarz

IPC分类号： B05D3/00

CPC分类号： H01L21/02074 ,  C23C18/1628 ,  C23C18/38 ,  C23C18/50 ,  H01L21/288 ,  H01L21/76849 ,  H01L21/76883 ,  Y10S134/902

摘要： An electroless plating chamber is provided. The electroless plating chamber includes a chuck configured to support a substrate and a bowl surrounding a base and a sidewall of the chuck. The base has an annular channel defined along an inner diameter of the base. The chamber includes a drain connected to the annular channel. The drain is capable of removing fluid collected from the chuck. A proximity head capable of cleaning and substantially drying the substrate is included in the chamber. A method for performing an electroless plating operation is also provided.

摘要翻译： 提供无电镀室。 化学镀室包括配置成支撑基板的卡盘和围绕卡盘的基部和侧壁的碗。 底座具有沿着底座的内径限定的环形通道。 该腔室包括连接到环形通道的排水口。 排水口能够去除从卡盘收集的流体。 能够清洁和基本上干燥基板的接近头包括在腔室中。 还提供了一种执行化学镀操作的方法。

公开(公告)号：US20080085370A1

公开(公告)日：2008-04-10

申请号：US11539155

申请日：2006-10-05

申请人： William Thie ,  John M. Boyd ,  Yezdi Dordi ,  Fritz C. Redeker

发明人： William Thie ,  John M. Boyd ,  Yezdi Dordi ,  Fritz C. Redeker

IPC分类号： B05D1/18 ,  B05C3/00

CPC分类号： C23C18/1617 ,  C23C18/163 ,  C23C18/1678 ,  H01L21/67092

摘要： An electroless plating system is provided. The system includes a first vacuum chuck supporting a first wafer and a second vacuum chuck supporting a second wafer such that a top surface of the second wafer is opposing a top surface of the first wafer. The system also includes a fluid delivery system configured to deliver a plating solution to the top surface of the first wafer, wherein in response to delivery of the plating solution, the top surface of the second wafer is brought proximate to the top surface of the first wafer so that the plating solution contacts both top surfaces. A method for applying an electroless plating solution to a substrate is also provided.

摘要翻译： 提供无电镀系统。 该系统包括支撑第一晶片的第一真空卡盘和支撑第二晶片的第二真空卡盘，使得第二晶片的顶表面与第一晶片的顶表面相对。 该系统还包括配置成将电镀溶液输送到第一晶片的顶表面的流体输送系统，其中响应于电镀溶液的输送，第二晶片的顶表面靠近第一晶片的顶表面 使得电镀溶液接触两个顶表面。 还提供了一种将无电镀液施加到基底上的方法。

公开(公告)号：US08622020B2

公开(公告)日：2014-01-07

申请号：US12891639

申请日：2010-09-27

申请人： William Thie ,  John M. Boyd ,  Yezdi Dordi ,  Fritz C. Redeker

发明人： William Thie ,  John M. Boyd ,  Yezdi Dordi ,  Fritz C. Redeker

IPC分类号： B05C3/00 ,  B05C19/02 ,  B05C3/02 ,  B05D3/02 ,  B05D1/18 ,  H01L21/44

CPC分类号： C23C18/1617 ,  C23C18/163 ,  C23C18/1678 ,  H01L21/67092

摘要： An electroless plating system is provided. The system includes a first vacuum chuck supporting a first wafer and a second vacuum chuck supporting a second wafer such that a top surface of the second wafer is opposing a top surface of the first wafer. The system also includes a fluid delivery system configured to deliver a plating solution to the top surface of the first wafer, wherein in response to delivery of the plating solution, the top surface of the second wafer is brought proximate to the top surface of the first wafer so that the plating solution contacts both top surfaces. A method for applying an electroless plating solution to a substrate is also provided.

摘要翻译： 提供无电镀系统。 该系统包括支撑第一晶片的第一真空卡盘和支撑第二晶片的第二真空卡盘，使得第二晶片的顶表面与第一晶片的顶表面相对。 该系统还包括配置成将电镀溶液输送到第一晶片的顶表面的流体输送系统，其中响应于电镀溶液的输送，第二晶片的顶表面靠近第一晶片的顶表面 使得电镀溶液接触两个顶表面。 还提供了一种将无电镀液施加到基底上的方法。

公开(公告)号：US07752996B2

公开(公告)日：2010-07-13

申请号：US11611736

申请日：2006-12-15

申请人： Yezdi Dordi ,  William Thie ,  John M. Boyd ,  Fritz C. Redeker ,  Aleksander Owczarz

发明人： Yezdi Dordi ,  William Thie ,  John M. Boyd ,  Fritz C. Redeker ,  Aleksander Owczarz

IPC分类号： B05C11/06 ,  B05C11/02 ,  B08B5/00 ,  B08B3/00

CPC分类号： H01L21/02074 ,  C23C18/1628 ,  C23C18/38 ,  C23C18/50 ,  H01L21/288 ,  H01L21/76849 ,  H01L21/76883 ,  Y10S134/902

摘要： An electroless plating chamber is provided. The electroless plating chamber includes a chuck configured to support a substrate and a bowl surrounding a base and a sidewall of the chuck. The base has an annular channel defined along an inner diameter of the base. The chamber includes a drain connected to the annular channel. The drain is capable of removing fluid collected from the chuck. A proximity head capable of cleaning and substantially drying the substrate is included in the chamber. A method for performing an electroless plating operation is also provided.

摘要翻译： 提供无电镀室。 化学镀室包括配置成支撑基板的卡盘和围绕卡盘的基部和侧壁的碗。 底座具有沿着底座的内径限定的环形通道。 该腔室包括连接到环形通道的排水口。 排水口能够去除从卡盘收集的流体。 能够清洁和基本上干燥基板的接近头包括在腔室中。 还提供了一种执行化学镀操作的方法。

公开(公告)号：US20110011335A1

公开(公告)日：2011-01-20

申请号：US12891639

申请日：2010-09-27

申请人： William Thie ,  John M. Boyd ,  Yezdi Dordi ,  Fritz C. Redeker

发明人： William Thie ,  John M. Boyd ,  Yezdi Dordi ,  Fritz C. Redeker

IPC分类号： C23C18/16 ,  C23C18/52 ,  C23C18/32 ,  C23C18/34 ,  B05C5/00 ,  H01L21/445

CPC分类号： C23C18/1617 ,  C23C18/163 ,  C23C18/1678 ,  H01L21/67092

摘要： An electroless plating system is provided. The system includes a first vacuum chuck supporting a first wafer and a second vacuum chuck supporting a second wafer such that a top surface of the second wafer is opposing a top surface of the first wafer. The system also includes a fluid delivery system configured to deliver a plating solution to the top surface of the first wafer, wherein in response to delivery of the plating solution, the top surface of the second wafer is brought proximate to the top surface of the first wafer so that the plating solution contacts both top surfaces. A method for applying an electroless plating solution to a substrate is also provided.

摘要翻译： 提供无电镀系统。 该系统包括支撑第一晶片的第一真空卡盘和支撑第二晶片的第二真空卡盘，使得第二晶片的顶表面与第一晶片的顶表面相对。 该系统还包括配置成将电镀溶液输送到第一晶片的顶表面的流体输送系统，其中响应于电镀溶液的输送，第二晶片的顶表面靠近第一晶片的顶表面 使得电镀溶液接触两个顶表面。 还提供了一种将无电镀液施加到基底上的方法。

公开(公告)号：US07829152B2

公开(公告)日：2010-11-09

申请号：US11539155

申请日：2006-10-05

申请人： William Thie ,  John M. Boyd ,  Yezdi Dordi ,  Fritz C. Redeker

发明人： William Thie ,  John M. Boyd ,  Yezdi Dordi ,  Fritz C. Redeker

IPC分类号： C23C18/32 ,  C23C18/50 ,  B05D1/18 ,  B05D3/02 ,  H01L21/441 ,  H01L21/445

CPC分类号： C23C18/1617 ,  C23C18/163 ,  C23C18/1678 ,  H01L21/67092

摘要： An electroless plating system is provided. The system includes a first vacuum chuck supporting a first wafer and a second vacuum chuck supporting a second wafer such that a top surface of the second wafer is opposing a top surface of the first wafer. The system also includes a fluid delivery system configured to deliver a plating solution to the top surface of the first wafer, wherein in response to delivery of the plating solution, the top surface of the second wafer is brought proximate to the top surface of the first wafer so that the plating solution contacts both top surfaces. A method for applying an electroless plating solution to a substrate is also provided.

摘要翻译： 提供无电镀系统。 该系统包括支撑第一晶片的第一真空卡盘和支撑第二晶片的第二真空卡盘，使得第二晶片的顶表面与第一晶片的顶表面相对。 该系统还包括配置成将电镀溶液输送到第一晶片的顶表面的流体输送系统，其中响应于电镀溶液的输送，第二晶片的顶表面靠近第一晶片的顶表面 使得电镀溶液接触两个顶表面。 还提供了一种将无电镀液施加到基底上的方法。

公开(公告)号：US07875554B2

公开(公告)日：2011-01-25

申请号：US12044537

申请日：2008-03-07

申请人： Yezdi Dordi ,  John Boyd ,  William Thie ,  Bob Maraschin ,  Fred C. Redeker ,  Joel M. Cook

发明人： Yezdi Dordi ,  John Boyd ,  William Thie ,  Bob Maraschin ,  Fred C. Redeker ,  Joel M. Cook

IPC分类号： H01L21/44

CPC分类号： C23C18/1612 ,  C23C18/14 ,  C23C18/161 ,  C23C18/1619 ,  C23C18/1651 ,  C23C18/1667 ,  C23C18/168 ,  C23C18/31 ,  H01L21/288

摘要： Broadly speaking, a method and an apparatus are provided for depositing a material on a semiconductor wafer (“wafer”). More specifically, the method and apparatus provide for selective heating of a surface of the wafer exposed to an electroless plating solution. The selective heating is provided by applying radiant energy to the wafer surface. The selective heating of the wafer surface causes a temperature increase at an interface between the wafer surface and the electroless plating solution. The temperature increase at the interface in turn causes a plating reaction to occur at the wafer surface. Thus, material is deposited on the wafer surface through an electroless plating reaction that is initiated and controlled by varying the temperature of the wafer surface using an appropriately defined radiant energy source.

摘要翻译： 概括地说，提供了一种在半导体晶片（“晶片”）上沉积材料的方法和装置。 更具体地，该方法和装置提供了暴露于化学镀溶液的晶片的表面的选择性加热。 通过向晶片表面施加辐射能来提供选择性加热。 晶片表面的选择性加热导致晶片表面和化学镀溶液之间的界面处的温度升高。 界面处的温度升高又导致在晶片表面发生电镀反应。 因此，通过化学镀反应将材料沉积在晶片表面上，该电镀反应通过使用适当限定的辐射能源改变晶片表面的温度来启动和控制。

公开(公告)号：US07358186B2

公开(公告)日：2008-04-15

申请号：US10735216

申请日：2003-12-12

申请人： Yezdi Dordi ,  John Boyd ,  William Thie ,  Bob Maraschin ,  Fred C. Redeker ,  Joel M. Cook

发明人： Yezdi Dordi ,  John Boyd ,  William Thie ,  Bob Maraschin ,  Fred C. Redeker ,  Joel M. Cook

IPC分类号： H01L21/44 ,  B05C5/12

CPC分类号： C23C18/1612 ,  C23C18/14 ,  C23C18/161 ,  C23C18/1619 ,  C23C18/1651 ,  C23C18/1667 ,  C23C18/168 ,  C23C18/31 ,  H01L21/288

摘要： Broadly speaking, a method and an apparatus are provided for depositing a material on a semiconductor wafer (“wafer”). More specifically, the method and apparatus provide for selective heating of a surface of the wafer exposed to an electroless plating solution. The selective heating is provided by applying radiant energy to the wafer surface. The selective heating of the wafer surface causes a temperature increase at an interface between the wafer surface and the electroless plating solution. The temperature increase at the interface in turn causes a plating reaction to occur at the wafer surface. Thus, material is deposited on the wafer surface through an electroless plating reaction that is initiated and controlled by varying the temperature of the wafer surface using an appropriately defined radiant energy source.

摘要翻译： 概括地说，提供了一种在半导体晶片（“晶片”）上沉积材料的方法和装置。 更具体地，该方法和装置提供了暴露于化学镀溶液的晶片的表面的选择性加热。 通过向晶片表面施加辐射能来提供选择性加热。 晶片表面的选择性加热导致晶片表面和化学镀溶液之间的界面处的温度升高。 界面处的温度升高又导致在晶片表面发生电镀反应。 因此，通过化学镀反应将材料沉积在晶片表面上，该电镀反应通过使用适当限定的辐射能源改变晶片表面的温度来启动和控制。

公开(公告)号：US20050130415A1

公开(公告)日：2005-06-16

申请号：US10735216

申请日：2003-12-12

申请人： Yezdi Dordi ,  John Boyd ,  William Thie ,  Bob Maraschin ,  Fred Redeker ,  Joel Cook

发明人： Yezdi Dordi ,  John Boyd ,  William Thie ,  Bob Maraschin ,  Fred Redeker ,  Joel Cook

IPC分类号： C23C18/14 ,  C23C18/16 ,  C23C18/31 ,  G01N27/26 ,  H01L21/288 ,  H01L21/44

CPC分类号： C23C18/1612 ,  C23C18/14 ,  C23C18/161 ,  C23C18/1619 ,  C23C18/1651 ,  C23C18/1667 ,  C23C18/168 ,  C23C18/31 ,  H01L21/288

摘要： Broadly speaking, a method and an apparatus are provided for depositing a material on a semiconductor wafer (“wafer”). More specifically, the method and apparatus provide for selective heating of a surface of the wafer exposed to an electroless plating solution. The selective heating is provided by applying radiant energy to the wafer surface. The selective heating of the wafer surface causes a temperature increase at an interface between the wafer surface and the electroless plating solution. The temperature increase at the interface in turn causes a plating reaction to occur at the wafer surface. Thus, material is deposited on the wafer surface through an electroless plating reaction that is initiated and controlled by varying the temperature of the wafer surface using an appropriately defined radiant energy source.

摘要翻译： 概括地说，提供了一种在半导体晶片（“晶片”）上沉积材料的方法和装置。 更具体地，该方法和装置提供了暴露于化学镀溶液的晶片的表面的选择性加热。 通过向晶片表面施加辐射能来提供选择性加热。 晶片表面的选择性加热导致晶片表面和化学镀溶液之间的界面处的温度升高。 界面处的温度升高又导致在晶片表面发生电镀反应。 因此，通过化学镀反应将材料沉积在晶片表面上，该电镀反应通过使用适当限定的辐射能源改变晶片表面的温度来启动和控制。