公开(公告)号：US5278104A

公开(公告)日：1994-01-11

申请号：US870240

申请日：1992-04-20

申请人： Masako Kodera ,  Tohru Watanabe ,  Katsuya Okumura

发明人： Masako Kodera ,  Tohru Watanabe ,  Katsuya Okumura

IPC分类号： H01L21/673 ,  H01L21/68 ,  H01L21/306

CPC分类号： H01L21/67326 ,  H01L21/67386 ,  Y10S134/902 ,  Y10S414/135

摘要： A semiconductor device support carrier used for a liquid phase process of a semiconductor device with a process liquid is disclosed. The semiconductor device support carrier comprises a support frame supporting the semiconductor device, and a dust protection plate mounted on the support frame and positioned above the semiconductor device. When the semiconductor device support carrier is drawn up from the process liquid, dust in the process liquid is pushed aside and out of the semiconductor device by the dust protection plate.

摘要翻译： 公开了一种用于具有工艺液体的半导体器件的液相工艺的半导体器件支撑载体。 半导体器件支撑载体包括支撑半导体器件的支撑框架和安装在支撑框架上并位于半导体器件上方的防尘板。 当半导体器件支撑载体从处理液体中拉出时，处理液中的灰尘被防尘板推到半导体器件外面。

公开(公告)号：US08740667B2

公开(公告)日：2014-06-03

申请号：US13415143

申请日：2012-03-08

申请人： Masako Kodera ,  Yukiteru Matsui

发明人： Masako Kodera ,  Yukiteru Matsui

IPC分类号： B24B37/015

CPC分类号： B24B37/015 ,  B24B37/044 ,  B24B55/02

摘要： According to one embodiment, a polishing method comprises pressing a substrate being rotated against a polishing pad being rotated and supplying slurry on the polishing pad, measuring a surface temperature of the polishing pad, and when the surface temperature is not less than a predetermined temperature, jetting jet stream containing supercooled droplets from a nozzle having a narrow portion toward the polishing pad.

摘要翻译： 根据一个实施例，抛光方法包括将正在旋转的衬底旋转的衬底压在抛光垫上并将浆料供应到抛光垫上，测量抛光垫的表面温度，并且当表面温度不低于预定温度时， 从具有窄部分的喷嘴朝向抛光垫的喷射流包含过冷液滴。

公开(公告)号：US20100237501A1

公开(公告)日：2010-09-23

申请号：US12726604

申请日：2010-03-18

申请人： Hideyuki Tomizawa ,  Noriaki Matsunaga ,  Tadayoshi Watanabe ,  Shiro Mishima ,  Masako Kodera

发明人： Hideyuki Tomizawa ,  Noriaki Matsunaga ,  Tadayoshi Watanabe ,  Shiro Mishima ,  Masako Kodera

IPC分类号： H01L23/532 ,  H01L21/768

CPC分类号： H01L21/76826 ,  H01L21/3105 ,  H01L21/76832 ,  H01L21/76849 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for manufacturing a semiconductor device includes forming an insulating film including silicon, oxygen, carbon and hydrogen above a semiconductor substrate, forming a wiring trench in the insulating film, forming a metal film to be a metal wiring on the insulating film such that the metal film is provided in the wiring trench, forming the metal wiring by removing the metal film outside the wiring trench, performing a hydrophobic treatment to the surface of the insulating film after the forming the metal wiring, and forming a metal cap selectively on an upper surface of the metal wiring by plating after the performing the hydrophobic treatment.

摘要翻译： 一种制造半导体器件的方法包括在半导体衬底上形成包括硅，氧，碳和氢的绝缘膜，在绝缘膜中形成布线沟槽，在绝缘膜上形成金属膜作为金属布线，使得 金属膜设置在布线沟槽中，通过去除布线沟槽外的金属膜形成金属布线，在形成金属布线之后对绝缘膜的表面进行疏水处理，并在上部选择性地形成金属帽 在执行疏水处理之后通过电镀的金属布线的表面。

公开(公告)号：US20080017220A1

公开(公告)日：2008-01-24

申请号：US11902163

申请日：2007-09-19

申请人： Masako Kodera ,  Kenya Ito ,  Masayuki Kamezawa ,  Satomi Hamada ,  Ichiro Katakabe

发明人： Masako Kodera ,  Kenya Ito ,  Masayuki Kamezawa ,  Satomi Hamada ,  Ichiro Katakabe

IPC分类号： C23G1/00

CPC分类号： H01L21/67173 ,  B08B1/04 ,  B08B3/02 ,  B08B3/04 ,  B08B3/08 ,  B08B3/12 ,  C23G3/00 ,  H01L21/67046 ,  H01L21/67051 ,  H01L21/67057 ,  H01L21/67219

摘要： The present invention relates to a cleaning apparatus which can reduce a potential difference between metals or alloys used to form interconnects on a substrate for thereby minimizing corrosion which may occur during and after a substrate cleaning process. The cleaning apparatus for cleaning a substrate having metal interconnects comprises a cleaning mechanism for cleaning the substrate, and a functional water supply mechanism for supplying functional water to the cleaning mechanism. The cleaning mechanism cleans a surface of the substrate with use of the functional water.

摘要翻译： 本发明涉及一种清洁装置，其可以减少用于在基板上形成互连件的金属或合金之间的电位差，从而最小化在基板清洗处理期间和之后可能发生的腐蚀。 用于清洁具有金属互连件的基板的清洁装置包括用于清洁基板的清洁机构和用于向清洁机构供应功能性水的功能性供水机构。 清洁机构使用功能性水清洗基材的表面。

公开(公告)号：US5860181A

公开(公告)日：1999-01-19

申请号：US716889

申请日：1996-09-20

申请人： Toshiro Maekawa ,  Satomi Hamada ,  Koji Ono ,  Atsushi Shigeta ,  Masako Kodera

发明人： Toshiro Maekawa ,  Satomi Hamada ,  Koji Ono ,  Atsushi Shigeta ,  Masako Kodera

IPC分类号： B08B1/00 ,  B08B1/04 ,  B24B53/007 ,  H01L21/00 ,  H01L21/304 ,  H01L21/687 ,  A46B13/02 ,  A47L25/00

CPC分类号： H01L21/68728 ,  B08B1/00 ,  B08B1/007 ,  B08B1/04 ,  B24B53/017 ,  H01L21/67046 ,  H01L21/67051

摘要： A method of and an apparatus for cleaning workpiece is suitable for cleaning a substrate such as a semiconductor substrate, a glass substrate, or a liquid crystal panel to a high level of cleanliness. The method of cleaning a workpiece comprises the steps of holding a workpiece, scrubbing the workpiece with a cleaning member, and rubbing the cleaning member against a member having a rough surface to carry out a self-cleaning of the cleaning member. The cleaning member which is contaminated by having scrubbed the workpiece is rubbed against the rough surface, and the rough surface scrapes the contaminant off the cleaning member. Therefore, the contaminant can effectively be removed from the cleaning member, and hence the cleaning member has a high self-cleaning effect.

摘要翻译： 用于清洁工件的方法和装置适用于清洁诸如半导体衬底，玻璃衬底或液晶面板的衬底以达到高清洁度。 清洁工件的方法包括以下步骤：保持工件，用清洁构件擦拭工件，并将清洁构件摩擦抵靠具有粗糙表面的构件，以进行清洁构件的自清洁。 被擦洗工件污染的清洁部件与粗糙表面摩擦，粗糙表面将污染物从清洁部件上刮下。 因此，可以有效地从清洁部件去除污染物，因此清洁部件具有高的自清洁效果。

公开(公告)号：US5846335A

公开(公告)日：1998-12-08

申请号：US844903

申请日：1997-04-22

申请人： Toshiro Maekawa ,  Koji Ono ,  Motoaki Okada ,  Tamami Takahashi ,  Shiro Mishima ,  Masako Kodera ,  Atsushi Shigeta ,  Riichiro Aoki ,  Gisuke Kouno

发明人： Toshiro Maekawa ,  Koji Ono ,  Motoaki Okada ,  Tamami Takahashi ,  Shiro Mishima ,  Masako Kodera ,  Atsushi Shigeta ,  Riichiro Aoki ,  Gisuke Kouno

IPC分类号： B08B1/00 ,  B08B1/04 ,  B08B3/08 ,  B24B37/34 ,  B24D3/32 ,  H01L21/00 ,  H01L21/306 ,  B08B1/02 ,  B08B3/04 ,  B08B7/04

CPC分类号： H01L21/02046 ,  B08B1/007 ,  B08B1/04 ,  B08B3/08 ,  B24B37/345 ,  B24D3/32 ,  H01L21/02052 ,  H01L21/67046 ,  Y10S134/902

摘要： A semiconductor cleaning method includes scrubbing a semiconductor wafer using a cleaning member made primarily of polyurethane and having micropores in a surface contacting the semiconductor wafer. The micropores have an average diameter ranging from 10 to 200 .mu.m. The cleaning member may be made of either polyurethane foam or non-woven fabric composed of fibers bound together by urethane resin. By this scrubbing step, particles that are strongly attached to the surface of a substrate such as the semiconductor wafer can easily be removed. During cleaning of the substrate, surface irregularities and crystalline protrusions on the surface of a substrate such as a semiconductor wafer can be scraped off to adjust the surface roughness of the semiconductor wafer to a desired degree for making the semiconductor wafer surface flat.

摘要翻译： 半导体清洁方法包括使用主要由聚氨酯制成并且在与半导体晶片接触的表面中具有微孔的清洁部件来擦洗半导体晶片。 微孔的平均直径为10〜200μm。 清洁构件可以由聚氨酯泡沫或由聚氨酯树脂粘合在一起的纤维组成的无纺织物制成。 通过该洗涤步骤，可以容易地除去强烈附着到诸如半导体晶片的基板的表面的颗粒。 在清洁基板期间，可以刮掉诸如半导体晶片的基板的表面上的表面不规则和晶体突起，以将半导体晶片的表面粗糙度调整到期望的程度，以使半导体晶片表面平坦。

公开(公告)号：US5695601A

公开(公告)日：1997-12-09

申请号：US578894

申请日：1995-12-27

申请人： Masako Kodera ,  Atsushi Shigeta ,  Shiro Mishima ,  Hiromi Yajima ,  Riichirou Aoki

发明人： Masako Kodera ,  Atsushi Shigeta ,  Shiro Mishima ,  Hiromi Yajima ,  Riichirou Aoki

IPC分类号： B24B37/04 ,  B24B49/12 ,  H01L21/66 ,  H01L21/306

CPC分类号： B24B37/005 ,  B24B37/042 ,  B24B49/12 ,  H01L22/20

摘要： A film formed on a wafer is polished in a CMP unit. Thereafter, the wafer, which is adhered to a wafer holder, is moved to a portion above an optical sensor. A surface of the wafer is radiated with, for example, a visible ray, thereby measuring a thickness of the film which has been polished. A control unit automatically sets a polishing time for polishing a film on a wafer to be polished next.

摘要翻译： 在CMP单元上抛光形成在晶片上的膜。 此后，粘附到晶片保持器上的晶片移动到光学传感器上方的部分。 用例如可见光辐射晶片的表面，从而测量已经被抛光的膜的厚度。 控制单元自动设置抛光时间，用于在随后抛光的晶片上抛光膜。

公开(公告)号：US5131546A

公开(公告)日：1992-07-21

申请号：US594308

申请日：1990-10-09

申请人： Masako Kodera

发明人： Masako Kodera

IPC分类号： H01L21/208 ,  H01L21/304 ,  H01L21/31 ,  H01L21/673

CPC分类号： H01L21/67313

摘要： A semiconductor wafer support carrier used for supporting semiconductor wafers during a liquid phase process. The semiconductor wafer support carrier supports the semiconductor wafers when the semiconductor wafers are standing and spaced. The semiconductor wafer support carrier comprises a support frame supporting the semiconductor wafers, and dust protector plates arranged parallel to the semiconductor wafers. The dust protection plates are high enough that the upper ends thereof come out of the process liquid prior to the semiconductor wafers when the support frame is lifted out of the liquid.

摘要翻译： 用于在液相处理期间支撑半导体晶片的半导体晶片支撑载体。 半导体晶片支撑载体在半导体晶片静置和间隔时支撑半导体晶片。 半导体晶片支撑载体包括支撑半导体晶片的支撑框架和平行于半导体晶片布置的防尘板。 防尘板足够高，使得当支撑框架从液体中提出时，其上端在半导体晶片之前从工艺液体中脱出。