公开(公告)号：US20080017220A1

公开(公告)日：2008-01-24

申请号：US11902163

申请日：2007-09-19

申请人： Masako Kodera ,  Kenya Ito ,  Masayuki Kamezawa ,  Satomi Hamada ,  Ichiro Katakabe

发明人： Masako Kodera ,  Kenya Ito ,  Masayuki Kamezawa ,  Satomi Hamada ,  Ichiro Katakabe

IPC分类号： C23G1/00

CPC分类号： H01L21/67173 ,  B08B1/04 ,  B08B3/02 ,  B08B3/04 ,  B08B3/08 ,  B08B3/12 ,  C23G3/00 ,  H01L21/67046 ,  H01L21/67051 ,  H01L21/67057 ,  H01L21/67219

摘要： The present invention relates to a cleaning apparatus which can reduce a potential difference between metals or alloys used to form interconnects on a substrate for thereby minimizing corrosion which may occur during and after a substrate cleaning process. The cleaning apparatus for cleaning a substrate having metal interconnects comprises a cleaning mechanism for cleaning the substrate, and a functional water supply mechanism for supplying functional water to the cleaning mechanism. The cleaning mechanism cleans a surface of the substrate with use of the functional water.

摘要翻译： 本发明涉及一种清洁装置，其可以减少用于在基板上形成互连件的金属或合金之间的电位差，从而最小化在基板清洗处理期间和之后可能发生的腐蚀。 用于清洁具有金属互连件的基板的清洁装置包括用于清洁基板的清洁机构和用于向清洁机构供应功能性水的功能性供水机构。 清洁机构使用功能性水清洗基材的表面。

公开(公告)号：US5860181A

公开(公告)日：1999-01-19

申请号：US716889

申请日：1996-09-20

申请人： Toshiro Maekawa ,  Satomi Hamada ,  Koji Ono ,  Atsushi Shigeta ,  Masako Kodera

发明人： Toshiro Maekawa ,  Satomi Hamada ,  Koji Ono ,  Atsushi Shigeta ,  Masako Kodera

IPC分类号： B08B1/00 ,  B08B1/04 ,  B24B53/007 ,  H01L21/00 ,  H01L21/304 ,  H01L21/687 ,  A46B13/02 ,  A47L25/00

CPC分类号： H01L21/68728 ,  B08B1/00 ,  B08B1/007 ,  B08B1/04 ,  B24B53/017 ,  H01L21/67046 ,  H01L21/67051

摘要： A method of and an apparatus for cleaning workpiece is suitable for cleaning a substrate such as a semiconductor substrate, a glass substrate, or a liquid crystal panel to a high level of cleanliness. The method of cleaning a workpiece comprises the steps of holding a workpiece, scrubbing the workpiece with a cleaning member, and rubbing the cleaning member against a member having a rough surface to carry out a self-cleaning of the cleaning member. The cleaning member which is contaminated by having scrubbed the workpiece is rubbed against the rough surface, and the rough surface scrapes the contaminant off the cleaning member. Therefore, the contaminant can effectively be removed from the cleaning member, and hence the cleaning member has a high self-cleaning effect.

摘要翻译： 用于清洁工件的方法和装置适用于清洁诸如半导体衬底，玻璃衬底或液晶面板的衬底以达到高清洁度。 清洁工件的方法包括以下步骤：保持工件，用清洁构件擦拭工件，并将清洁构件摩擦抵靠具有粗糙表面的构件，以进行清洁构件的自清洁。 被擦洗工件污染的清洁部件与粗糙表面摩擦，粗糙表面将污染物从清洁部件上刮下。 因此，可以有效地从清洁部件去除污染物，因此清洁部件具有高的自清洁效果。

公开(公告)号：US20130115774A1

公开(公告)日：2013-05-09

申请号：US13422969

申请日：2012-03-16

申请人： Masako Kodera ,  Yukiteru Matsui

发明人： Masako Kodera ,  Yukiteru Matsui

IPC分类号： H01L21/3105 ,  C23F1/08 ,  H01L21/306

CPC分类号： H01L21/67086 ,  H01L21/31055 ,  H01L21/67011

摘要： According to one embodiment, a method for chemical planarization includes: preparing a treatment liquid containing a hydrosilicofluoric acid aqueous solution containing silicon dioxide dissolved therein at a saturated concentration; and decreasing height of irregularity of a silicon dioxide film. In the decreasing, dissolution rate of convex portions is made larger than dissolution rate of concave portion of the irregularity while changing equilibrium state of the treatment liquid at areas being in contact with the convex portions of the irregularity, in a state in which the silicon dioxide film having the irregularity is brought into contact with the treatment liquid.

摘要翻译： 根据一个实施方案，化学平面化方法包括：以饱和浓度制备含有溶解有二氧化硅的氢硅氟酸水溶液的处理液; 并降低二氧化硅膜的不规则高度。 在使二氧化硅的状态下，使凹凸部的溶解率降低，使得在不规则的凸部接触的区域改变处理液的平衡状态，使凸部的溶解率大于凹凸部的凹部的溶解率 使具有不规则性的膜与处理液接触。

公开(公告)号：US07727891B2

公开(公告)日：2010-06-01

申请号：US11074774

申请日：2005-03-09

申请人： Yoshitaka Matsui ,  Masako Kodera

发明人： Yoshitaka Matsui ,  Masako Kodera

IPC分类号： H01L21/461

CPC分类号： H01L21/02071 ,  H01L21/31116 ,  H01L21/3212 ,  H01L21/76814 ,  H01L21/76838 ,  H01L21/7684 ,  H01L21/76883

摘要： A method of manufacturing a semiconductor device, including the following processes of forming a structure in which a barrier metal containing at least of Ti and Ta and a copper wiring are exposed on its surface, or a structure in which at least one substance selected from the group consisting of Ti, W, and Cu and Al are exposed on its surface, above a semiconductor substrate, and supplying a hydrogen-dissolved solution dissolving hydrogen gas to the surface of the structure.

摘要翻译： 一种制造半导体器件的方法，包括以下工序：形成其中至少含有Ti和Ta和铜布线的阻挡金属在其表面上露出的结构，或者其中至少一种选自 由Ti，W和Cu和Al组成的组在其表面上暴露于半导体衬底上方，并将溶解有氢的氢溶解溶液供给到结构的表面。

公开(公告)号：US20070254558A1

公开(公告)日：2007-11-01

申请号：US11661141

申请日：2005-08-26

申请人： Masako Kodera ,  Yoshihiro Mochizuki ,  Akira Fukuda ,  Akira Kodera ,  Hirokuni Hiyama ,  Manabu Tsujimura ,  Kazuto Hirokawa ,  Akira Fukunaga

发明人： Masako Kodera ,  Yoshihiro Mochizuki ,  Akira Fukuda ,  Akira Kodera ,  Hirokuni Hiyama ,  Manabu Tsujimura ,  Kazuto Hirokawa ,  Akira Fukunaga

IPC分类号： B24B37/04 ,  H01L21/00

CPC分类号： H01L21/6708 ,  B24B37/005 ,  B24B37/042 ,  B24B37/046 ,  B24B49/006 ,  B24B57/02

摘要： A polishing apparatus (30) has a polishing surface (32), a top ring (36) for holding a wafer (W), motors (46, 56) to move the polishing surface (32) and the wafer (W) relative to each other at a relative speed, and a vertical movement mechanism (54) to press the wafer (W) against the polishing surface (32) under a pressing pressure. The polishing apparatus (30) also has a controller (44) to adjust a polishing condition in a non-Preston range in which a polishing rate is not proportional to a product of the pressing pressure and the relative speed. The polishing apparatus (30) can simultaneously achieve uniform supply of a chemical liquid to a surface of the wafer (W) and a uniform polishing rate within the surface of the wafer (W).

摘要翻译： 抛光装置（30）具有抛光面（32），用于保持晶片（W）的顶环（36），使抛光面（32）和晶片（W）相对于运动的电机（46,56）相对于 以及垂直移动机构（54），其在压制压力下将晶片（W）压靠在抛光表面（32）上。 抛光装置（30）还具有控制器（44），用于在抛光速率与按压压力与相对速度的乘积不成比例的非普雷斯顿范围内调节抛光状态。 抛光装置（30）可以同时实现向晶片（W）的表面均匀供应化学液体，并且在晶片表面（W）内均匀的研磨速率。

公开(公告)号：US20070173056A1

公开(公告)日：2007-07-26

申请号：US11652505

申请日：2007-01-12

申请人： Masako Kodera

发明人： Masako Kodera

IPC分类号： H01L21/4763

CPC分类号： H01L21/76843 ,  C25F3/02 ,  H01L21/3212 ,  H01L21/32125 ,  H01L21/7684

摘要： A method for fabricating a semiconductor device includes forming a barrier metal film on a substrate with an opening defined therein, forming a copper-containing film on said barrier metal film after having formed said barrier metal film on a surface of said substrate and an inner wall of said opening, and polishing said copper-containing film and said barrier metal film while applying a voltage to said substrate in a state that said copper-containing film and said barrier metal film are exposed.

摘要翻译： 一种制造半导体器件的方法包括：在其上限定有开口的基板上形成阻挡金属膜，在所述基板的表面上形成所述阻挡金属膜之后，在所述阻挡金属膜上形成含铜膜， 并且在所述含铜膜和所述阻挡金属膜露出的状态下对所述基板施加电压，并且对所述含铜膜和所述阻挡金属膜进行抛光。

公开(公告)号：US06410439B1

公开(公告)日：2002-06-25

申请号：US09527528

申请日：2000-03-16

申请人： Masako Kodera ,  Takashi Yoda ,  Motosuke Miyoshi

发明人： Masako Kodera ,  Takashi Yoda ,  Motosuke Miyoshi

IPC分类号： H01L21302

CPC分类号： B24B37/013 ,  H01L21/30625 ,  H01L21/31053

摘要： In the CMP of films of semiconductor devices, pulsed measuring radiation is directed onto a surface to be polished of a rotating wafer. At this point, the pulse repetition rate of the pulsed measuring radiation is determined so that the pulse measuring radiation is directed only onto a specified portion of the surface of each semiconductor device. Thereby, reflection data can be obtained only from the specified portion of a film to be polished, allowing accurate measurements of the thickness of the specified portion of the film in the middle of polishing.

摘要翻译： 在半导体器件的CMP的CMP中，脉冲测量辐射被引导到旋转晶片抛光的表面上。 此时，脉冲测量辐射的脉冲重复率被确定为使得脉冲测量辐射仅指向每个半导体器件的表面的指定部分。 由此，只能从要被研磨的膜的指定部分获得反射数据，从而可以精确地测量抛光中间的膜的指定部分的厚度。

公开(公告)号：US06224464B1

公开(公告)日：2001-05-01

申请号：US08763342

申请日：1996-12-11

申请人： Haruki Nojo ,  Rempei Nakata ,  Masako Kodera ,  Nobuo Hayasaka

发明人： Haruki Nojo ,  Rempei Nakata ,  Masako Kodera ,  Nobuo Hayasaka

IPC分类号： B24B100

CPC分类号： C09G1/02 ,  H01L21/31053

摘要： According to the present invention, there is provided a polishing method having the steps of forming a film to be polished, having a depressed portion and a protruding portion on a surface of a substrate, and polishing the film to be polished by relatively moving the substrate and a polishing table, while pressing the substrate having the film to be polished, onto a polishing cloth of the polishing table and supplying a polishing solution containing polishing grains, between the film to be polished and the polishing cloth, wherein an organic compound having a molecular weight of 100 or more, and containing at least one hydrophilic group selected from the group consisting of COOM1 (M represents an atom or a functional group which can form a salt when substituted with a hydrogen atom of a carboxyl group), SO3H (sulfo group) and SO3M2 (M2 represents an atom or a functional group which can form a salt when substituted with a hydrogen atom of a carboxyl group) is added to the polishing solution. Further, there are provided a polishing solution in which polishing grains are dispersed into a dispersion medium, and a polishing agent containing an organic compound having a molecular weight of 100 or more and containing at least one hydrophilic group selected from the group consisting of COOM1 (M represents an atom or a functional group which can form a salt when substituted with a hydrogen atom of a carboxyl group), SO3H (sulfo group) and SO3M2 (M2 represents an atom or a functional group which can form a salt when substituted with a hydrogen atom of a carboxyl group) added to the polishing solution.

摘要翻译： 根据本发明，提供了一种抛光方法，其具有以下步骤：在基板的表面上形成具有凹陷部分和突出部分的待抛光膜，并且通过相对移动基板来抛光待抛光的膜 以及研磨台，在将要研磨的膜的基板按压到研磨台的抛光布上，并在待抛光的薄膜和抛光布之间提供含有抛光颗粒的抛光液，其中具有 分子量为100以上，并且含有至少一个选自COOM1的亲水基团（M表示当被羧基的氢原子取代时可以形成盐的原子或官能团），SO 3 H（磺基 基团）和SO 3 M 2（M2表示当被羧基的氢原子取代时可以形成盐的原子或官能团）加入到抛光溶胶 。 此外，提供了将研磨粒分散在分散介质中的研磨液，以及含有分子量为100以上且含有至少一个亲水性基团的研磨剂，所述亲水性基团选自COOM1（ M表示当被羧基的氢原子取代时可以形成盐的原子或官能团），SO 3 H（磺基）和SO 3 M 2（M 2表示当被取代时可以形成盐的原子或官能团 加入到抛光溶液中的羧基的氢原子）。

公开(公告)号：US5860847A

公开(公告)日：1999-01-19

申请号：US708948

申请日：1996-09-06

申请人： Kunihiko Sakurai ,  Tetsuji Togawa ,  Toyomi Nishi ,  Seiji Katsuoka ,  Hiromi Yajima ,  Masako Kodera

发明人： Kunihiko Sakurai ,  Tetsuji Togawa ,  Toyomi Nishi ,  Seiji Katsuoka ,  Hiromi Yajima ,  Masako Kodera

IPC分类号： B24B37/013 ,  B24B37/04 ,  B24B49/04 ,  B24B49/16 ,  H01L21/66 ,  B24B49/00

CPC分类号： B24B37/013 ,  B24B37/04 ,  B24B49/04 ,  B24B49/16 ,  H01L22/26

摘要： A polishing apparatus has a turntable with an abrasive cloth mounted on an upper surface thereof and a top ring disposed above the turntable for supporting a workpiece to be polished against the abrasive cloth under predetermined pressure. The turntable is rotatable by a first motor through a timing pulley connected to the first motor, and the top ring is rotatable by a second motor through a timing pulley connected to the second motor. A torque detector incorporated in the timing pulley connected to at least one of the first motor and the second motor detects an output torque produced by the at least one of the first motor and the second motor.

摘要翻译： 抛光装置具有安装在其上表面上的研磨布的转台和设置在转盘上方的顶环，用于在预定压力下将待抛光的工件支撑在磨料上。 转盘可以通过连接到第一马达的定时皮带由第一马达旋转，并且顶环可以通过连接到第二马达的定时皮带的第二马达转动。 并入到与第一电动机和第二电动机中的至少一个连接的正时轮中的转矩检测器检测由第一电动机和第二电动机中的至少一个产生的输出转矩。

公开(公告)号：US5616063A

公开(公告)日：1997-04-01

申请号：US309193

申请日：1994-09-20

申请人： Katsuya Okumura ,  Riichirou Aoki ,  Hiromi Yajima ,  Masako Kodera ,  Shirou Mishima ,  Atsushi Shigeta ,  Masayoshi Hirose ,  Norio Kimura ,  Seiji Ishikawa

发明人： Katsuya Okumura ,  Riichirou Aoki ,  Hiromi Yajima ,  Masako Kodera ,  Shirou Mishima ,  Atsushi Shigeta ,  Masayoshi Hirose ,  Norio Kimura ,  Seiji Ishikawa

IPC分类号： H01L21/302 ,  B08B1/04 ,  B24B27/00 ,  B24B37/04 ,  B24B37/34 ,  B24B51/00 ,  B24B55/12 ,  H01L21/00 ,  H01L21/677 ,  B24B49/00

CPC分类号： H01L21/67167 ,  B08B1/04 ,  B08B13/00 ,  B24B27/0023 ,  B24B37/04 ,  B24B37/345 ,  B24B51/00 ,  B24B55/12 ,  H01L21/67028 ,  H01L21/67046 ,  H01L21/67057 ,  H01L21/67161 ,  H01L21/67219 ,  H01L21/67745

摘要： A polishing apparatus is a cluster type of apparatus having a plurality of units which perform various operations. The polishing apparatus includes a universal transfer robot having at least one arm for transferring a workpiece, a plurality of units disposed around the universal transfer robot and including a loading unit for receiving the workpiece to be polished, at least one polishing unit for polishing the workpiece, at least one washing unit for washing the workpiece which has been polished and an unloading unit for receiving the cleaned workpiece. Discrete mechanisms respectively transfer a clean workpiece and a dirty workpiece amongst the units.

摘要翻译： 抛光装置是具有执行各种操作的多个单元的集群类型的装置。 抛光装置包括具有用于传送工件的至少一个臂的通用传送机器人，设置在通用传送机器人周围的多个单元，并且包括用于接收被抛光工件的装载单元，用于抛光工件的至少一个抛光单元 至少一个用于清洗已经被抛光的工件的洗涤单元和用于接收清洁的工件的卸载单元。 离散机构分别在单元之间传送清洁的工件和脏工件。