公开(公告)号：US5398459A

公开(公告)日：1995-03-21

申请号：US156641

申请日：1993-11-24

申请人： Katsuya Okumura ,  Tohru Watanabe ,  Riichirou Aoki ,  Hiroyuki Yano ,  Masako Kodera ,  Atsushi Shigeta ,  You Ishii ,  Norio Kimura ,  Masayoshi Hirose ,  Yukio Ikeda

发明人： Katsuya Okumura ,  Tohru Watanabe ,  Riichirou Aoki ,  Hiroyuki Yano ,  Masako Kodera ,  Atsushi Shigeta ,  You Ishii ,  Norio Kimura ,  Masayoshi Hirose ,  Yukio Ikeda

IPC分类号： B24B37/10 ,  B24B37/30 ,  B24B1/00

CPC分类号： B24B37/102 ,  B24B37/30

摘要： A workpiece such as a semiconductor wafer is positioned between a turntable and a top ring and polished by an abrasive cloth on the turntable while the top ring is being pressed against the turntable. The top ring has a retaining ring for preventing the workpiece from deviating from the lower surface of the top ring, and the retaining ring has an inside diameter larger than an outside diameter of the workpiece. The rotation of the turntable imparts a pressing force in a direction parallel to the upper surface of the turntable to the workpiece so that an outer periphery of the workpiece contacts an inner periphery of the retaining ring, and the rotation of the retaining ring imparts a rotational force to the workpiece so that the workpiece performs a planetary motion relative to the top ring in the retaining ring.

摘要翻译： 诸如半导体晶片的工件位于转盘和顶环之间，并且当顶环被压靠在转盘上时，其通过研磨布在转盘上抛光。 顶环具有用于防止工件偏离顶环的下表面的保持环，并且保持环的内径大于工件的外径。 转台的转动使平台于转台上表面的方向向工件施加压力，使得工件的外周与保持环的内周接触，并且保持环的旋转赋予转动 使工件相对于保持环中的顶环执行行星运动。

公开(公告)号：US5278104A

公开(公告)日：1994-01-11

申请号：US870240

申请日：1992-04-20

申请人： Masako Kodera ,  Tohru Watanabe ,  Katsuya Okumura

发明人： Masako Kodera ,  Tohru Watanabe ,  Katsuya Okumura

IPC分类号： H01L21/673 ,  H01L21/68 ,  H01L21/306

CPC分类号： H01L21/67326 ,  H01L21/67386 ,  Y10S134/902 ,  Y10S414/135

摘要： A semiconductor device support carrier used for a liquid phase process of a semiconductor device with a process liquid is disclosed. The semiconductor device support carrier comprises a support frame supporting the semiconductor device, and a dust protection plate mounted on the support frame and positioned above the semiconductor device. When the semiconductor device support carrier is drawn up from the process liquid, dust in the process liquid is pushed aside and out of the semiconductor device by the dust protection plate.

摘要翻译： 公开了一种用于具有工艺液体的半导体器件的液相工艺的半导体器件支撑载体。 半导体器件支撑载体包括支撑半导体器件的支撑框架和安装在支撑框架上并位于半导体器件上方的防尘板。 当半导体器件支撑载体从处理液体中拉出时，处理液中的灰尘被防尘板推到半导体器件外面。

公开(公告)号：US5616063A

公开(公告)日：1997-04-01

申请号：US309193

申请日：1994-09-20

申请人： Katsuya Okumura ,  Riichirou Aoki ,  Hiromi Yajima ,  Masako Kodera ,  Shirou Mishima ,  Atsushi Shigeta ,  Masayoshi Hirose ,  Norio Kimura ,  Seiji Ishikawa

发明人： Katsuya Okumura ,  Riichirou Aoki ,  Hiromi Yajima ,  Masako Kodera ,  Shirou Mishima ,  Atsushi Shigeta ,  Masayoshi Hirose ,  Norio Kimura ,  Seiji Ishikawa

IPC分类号： H01L21/302 ,  B08B1/04 ,  B24B27/00 ,  B24B37/04 ,  B24B37/34 ,  B24B51/00 ,  B24B55/12 ,  H01L21/00 ,  H01L21/677 ,  B24B49/00

CPC分类号： H01L21/67167 ,  B08B1/04 ,  B08B13/00 ,  B24B27/0023 ,  B24B37/04 ,  B24B37/345 ,  B24B51/00 ,  B24B55/12 ,  H01L21/67028 ,  H01L21/67046 ,  H01L21/67057 ,  H01L21/67161 ,  H01L21/67219 ,  H01L21/67745

摘要： A polishing apparatus is a cluster type of apparatus having a plurality of units which perform various operations. The polishing apparatus includes a universal transfer robot having at least one arm for transferring a workpiece, a plurality of units disposed around the universal transfer robot and including a loading unit for receiving the workpiece to be polished, at least one polishing unit for polishing the workpiece, at least one washing unit for washing the workpiece which has been polished and an unloading unit for receiving the cleaned workpiece. Discrete mechanisms respectively transfer a clean workpiece and a dirty workpiece amongst the units.

摘要翻译： 抛光装置是具有执行各种操作的多个单元的集群类型的装置。 抛光装置包括具有用于传送工件的至少一个臂的通用传送机器人，设置在通用传送机器人周围的多个单元，并且包括用于接收被抛光工件的装载单元，用于抛光工件的至少一个抛光单元 至少一个用于清洗已经被抛光的工件的洗涤单元和用于接收清洁的工件的卸载单元。 离散机构分别在单元之间传送清洁的工件和脏工件。

公开(公告)号：US5489336A

公开(公告)日：1996-02-06

申请号：US329651

申请日：1994-10-25

申请人： Masako Kodera ,  Masami Watase ,  Shiro Mishima ,  Katsuya Okumura

发明人： Masako Kodera ,  Masami Watase ,  Shiro Mishima ,  Katsuya Okumura

IPC分类号： C01B33/12 ,  H01L21/00 ,  H01L21/316 ,  B05C3/00

CPC分类号： H01L21/67103

摘要： Disclosed is a method of forming a silicon oxide film on a silicon wafer, comprises the steps of keeping a supersaturated hydrofluoric acid solution of silicon oxide on the surface of a silicon wafer in a thickness of not more than 20 mm, the solution having a predetermined temperature, heating the supersaturated solution until the solution reaches a thermal equilibrium, and maintaining for a predetermined period of time the temperature at which a thermal equilibrium is established in the supersaturated solution so as to form a silicon oxide film on the surface of the silicon wafer.

摘要翻译： 公开了一种在硅晶片上形成氧化硅膜的方法，包括以下步骤：在硅晶片的表面上将氧化硅的过饱和氢氟酸溶液保持在不超过20毫米的厚度，该溶液具有预定的 温度，加热过饱和溶液直到溶液达到热平衡，并且在预定时间内保持在过饱和溶液中建立热平衡的温度，以便在硅晶片的表面上形成氧化硅膜 。

公开(公告)号：US5395645A

公开(公告)日：1995-03-07

申请号：US928070

申请日：1992-08-11

申请人： Masako Kodera ,  Masami Watase ,  Shiro Mishima ,  Katsuya Okumura

发明人： Masako Kodera ,  Masami Watase ,  Shiro Mishima ,  Katsuya Okumura

IPC分类号： C01B33/12 ,  H01L21/00 ,  H01L21/316 ,  B05D1/00

CPC分类号： H01L21/67103

摘要： Disclosed is a method of forming a silicon oxide film on a silicon wafer, comprises the steps of keeping a supersaturated hydrofluoric acid solution of silicon oxide on the surface of a silicon wafer in a thickness of not more than 20 mm, the solution having a predetermined temperature, heating the supersaturated solution until the solution reaches a thermal equilibrium, and maintaining for a predetermined period of time the temperature at which a thermal equilibrium is established in the supersaturated solution so as to form a silicon oxide film on the surface of the silicon wafer.

摘要翻译： 公开了一种在硅晶片上形成氧化硅膜的方法，包括以下步骤：在硅晶片的表面上将氧化硅的过饱和氢氟酸溶液保持在不超过20毫米的厚度，该溶液具有预定的 温度，加热过饱和溶液直到溶液达到热平衡，并且在预定时间内保持在过饱和溶液中建立热平衡的温度，以便在硅晶片的表面上形成氧化硅膜 。

公开(公告)号：US20130115774A1

公开(公告)日：2013-05-09

申请号：US13422969

申请日：2012-03-16

申请人： Masako Kodera ,  Yukiteru Matsui

发明人： Masako Kodera ,  Yukiteru Matsui

IPC分类号： H01L21/3105 ,  C23F1/08 ,  H01L21/306

CPC分类号： H01L21/67086 ,  H01L21/31055 ,  H01L21/67011

摘要： According to one embodiment, a method for chemical planarization includes: preparing a treatment liquid containing a hydrosilicofluoric acid aqueous solution containing silicon dioxide dissolved therein at a saturated concentration; and decreasing height of irregularity of a silicon dioxide film. In the decreasing, dissolution rate of convex portions is made larger than dissolution rate of concave portion of the irregularity while changing equilibrium state of the treatment liquid at areas being in contact with the convex portions of the irregularity, in a state in which the silicon dioxide film having the irregularity is brought into contact with the treatment liquid.

摘要翻译： 根据一个实施方案，化学平面化方法包括：以饱和浓度制备含有溶解有二氧化硅的氢硅氟酸水溶液的处理液; 并降低二氧化硅膜的不规则高度。 在使二氧化硅的状态下，使凹凸部的溶解率降低，使得在不规则的凸部接触的区域改变处理液的平衡状态，使凸部的溶解率大于凹凸部的凹部的溶解率 使具有不规则性的膜与处理液接触。

公开(公告)号：US07727891B2

公开(公告)日：2010-06-01

申请号：US11074774

申请日：2005-03-09

申请人： Yoshitaka Matsui ,  Masako Kodera

发明人： Yoshitaka Matsui ,  Masako Kodera

IPC分类号： H01L21/461

CPC分类号： H01L21/02071 ,  H01L21/31116 ,  H01L21/3212 ,  H01L21/76814 ,  H01L21/76838 ,  H01L21/7684 ,  H01L21/76883

摘要： A method of manufacturing a semiconductor device, including the following processes of forming a structure in which a barrier metal containing at least of Ti and Ta and a copper wiring are exposed on its surface, or a structure in which at least one substance selected from the group consisting of Ti, W, and Cu and Al are exposed on its surface, above a semiconductor substrate, and supplying a hydrogen-dissolved solution dissolving hydrogen gas to the surface of the structure.

摘要翻译： 一种制造半导体器件的方法，包括以下工序：形成其中至少含有Ti和Ta和铜布线的阻挡金属在其表面上露出的结构，或者其中至少一种选自 由Ti，W和Cu和Al组成的组在其表面上暴露于半导体衬底上方，并将溶解有氢的氢溶解溶液供给到结构的表面。

公开(公告)号：US20070254558A1

公开(公告)日：2007-11-01

申请号：US11661141

申请日：2005-08-26

申请人： Masako Kodera ,  Yoshihiro Mochizuki ,  Akira Fukuda ,  Akira Kodera ,  Hirokuni Hiyama ,  Manabu Tsujimura ,  Kazuto Hirokawa ,  Akira Fukunaga

发明人： Masako Kodera ,  Yoshihiro Mochizuki ,  Akira Fukuda ,  Akira Kodera ,  Hirokuni Hiyama ,  Manabu Tsujimura ,  Kazuto Hirokawa ,  Akira Fukunaga

IPC分类号： B24B37/04 ,  H01L21/00

CPC分类号： H01L21/6708 ,  B24B37/005 ,  B24B37/042 ,  B24B37/046 ,  B24B49/006 ,  B24B57/02

摘要： A polishing apparatus (30) has a polishing surface (32), a top ring (36) for holding a wafer (W), motors (46, 56) to move the polishing surface (32) and the wafer (W) relative to each other at a relative speed, and a vertical movement mechanism (54) to press the wafer (W) against the polishing surface (32) under a pressing pressure. The polishing apparatus (30) also has a controller (44) to adjust a polishing condition in a non-Preston range in which a polishing rate is not proportional to a product of the pressing pressure and the relative speed. The polishing apparatus (30) can simultaneously achieve uniform supply of a chemical liquid to a surface of the wafer (W) and a uniform polishing rate within the surface of the wafer (W).

摘要翻译： 抛光装置（30）具有抛光面（32），用于保持晶片（W）的顶环（36），使抛光面（32）和晶片（W）相对于运动的电机（46,56）相对于 以及垂直移动机构（54），其在压制压力下将晶片（W）压靠在抛光表面（32）上。 抛光装置（30）还具有控制器（44），用于在抛光速率与按压压力与相对速度的乘积不成比例的非普雷斯顿范围内调节抛光状态。 抛光装置（30）可以同时实现向晶片（W）的表面均匀供应化学液体，并且在晶片表面（W）内均匀的研磨速率。

公开(公告)号：US20070173056A1

公开(公告)日：2007-07-26

申请号：US11652505

申请日：2007-01-12

申请人： Masako Kodera

发明人： Masako Kodera

IPC分类号： H01L21/4763

CPC分类号： H01L21/76843 ,  C25F3/02 ,  H01L21/3212 ,  H01L21/32125 ,  H01L21/7684

摘要： A method for fabricating a semiconductor device includes forming a barrier metal film on a substrate with an opening defined therein, forming a copper-containing film on said barrier metal film after having formed said barrier metal film on a surface of said substrate and an inner wall of said opening, and polishing said copper-containing film and said barrier metal film while applying a voltage to said substrate in a state that said copper-containing film and said barrier metal film are exposed.

摘要翻译： 一种制造半导体器件的方法包括：在其上限定有开口的基板上形成阻挡金属膜，在所述基板的表面上形成所述阻挡金属膜之后，在所述阻挡金属膜上形成含铜膜， 并且在所述含铜膜和所述阻挡金属膜露出的状态下对所述基板施加电压，并且对所述含铜膜和所述阻挡金属膜进行抛光。

公开(公告)号：US06410439B1

公开(公告)日：2002-06-25

申请号：US09527528

申请日：2000-03-16

申请人： Masako Kodera ,  Takashi Yoda ,  Motosuke Miyoshi

发明人： Masako Kodera ,  Takashi Yoda ,  Motosuke Miyoshi

IPC分类号： H01L21302

CPC分类号： B24B37/013 ,  H01L21/30625 ,  H01L21/31053

摘要： In the CMP of films of semiconductor devices, pulsed measuring radiation is directed onto a surface to be polished of a rotating wafer. At this point, the pulse repetition rate of the pulsed measuring radiation is determined so that the pulse measuring radiation is directed only onto a specified portion of the surface of each semiconductor device. Thereby, reflection data can be obtained only from the specified portion of a film to be polished, allowing accurate measurements of the thickness of the specified portion of the film in the middle of polishing.

摘要翻译： 在半导体器件的CMP的CMP中，脉冲测量辐射被引导到旋转晶片抛光的表面上。 此时，脉冲测量辐射的脉冲重复率被确定为使得脉冲测量辐射仅指向每个半导体器件的表面的指定部分。 由此，只能从要被研磨的膜的指定部分获得反射数据，从而可以精确地测量抛光中间的膜的指定部分的厚度。