公开(公告)号：US07251102B2

公开(公告)日：2007-07-31

申请号：US10782496

申请日：2004-02-19

申请人： Cherng-Chyi Han ,  Mao-Min Chen ,  Laurie Lauchlan ,  Lei Zhang

发明人： Cherng-Chyi Han ,  Mao-Min Chen ,  Laurie Lauchlan ,  Lei Zhang

IPC分类号： G11B5/127

CPC分类号： G11B5/33 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/4906 ,  Y10T29/49062 ,  Y10T29/49064

摘要： Aggressive (i.e. tight tolerance) stitching offers several advantages for magnetic write heads but at the cost of some losses during pole trimming. This problem has been overcome by replacing the alumina filler layer, that is used to protect the stitched pole during trimming, with a layer of electro-plated material. Because of the superior step coverage associated with the plating method of deposition, pole trimming can then proceed without the introduction of stresses to the stitched pole while it is being trimmed.

摘要翻译： 积极（即紧公差）缝合为磁性写入头提供了几个优点，但是在极修整期间以一些损失为代价。 通过用一层电镀材料代替在修整期间用于保护缝合极的氧化铝填料层已经克服了这个问题。 由于与沉积电镀方法相关的优越的台阶覆盖，因此可以进行极细修剪，而不会在缝合极被修剪时引入应力。

公开(公告)号：US07126789B2

公开(公告)日：2006-10-24

申请号：US10633133

申请日：2003-08-01

申请人： Cherng Chyi Han ,  Mao-Min Chen

发明人： Cherng Chyi Han ,  Mao-Min Chen

IPC分类号： G11B5/147

CPC分类号： G11B5/3103 ,  Y10T29/49032

摘要： Present processes used for planarizing a cavity filled with a coil and hard baked photoresist require that a significant amount of the thickness of the coils be removed. This increases the DC resistance of the coil. In the present invention, CMP is terminated as soon as the coils are exposed, allowing their full thickness to be retained and resulting in minimum DC resistance. Application of this process to the manufacture of a planar magnetic write head is described.

摘要翻译： 用于平坦化填充有线圈和硬烘烤光致抗蚀剂的空腔的现有方法需要去除大量的线圈厚度。 这增加了线圈的直流电阻。 在本发明中，一旦线圈暴露，CMP就终止，允许其保持其全部厚度并且导致最小的直流电阻。 描述了该方法在平面磁写头的制造中的应用。

公开(公告)号：US07106558B2

公开(公告)日：2006-09-12

申请号：US10868713

申请日：2004-06-15

申请人： Kochan Ju ,  You Feng Zheng ,  Mao-Min Chen ,  Cherng-Chyi Han ,  Charles Lin

发明人： Kochan Ju ,  You Feng Zheng ,  Mao-Min Chen ,  Cherng-Chyi Han ,  Charles Lin

IPC分类号： G11B5/33

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/313 ,  G11B5/3163 ,  G11B5/3903 ,  G11B2005/3996

摘要： A magnetic read head with reduced side reading characteristics is described. This design combines use of a current channeling layer (CCL) with stabilizing longitudinal bias layers whose magnetization direction is canted relative to that of the free layer easy axis and that of the pinned layer (of the GMR). This provides several advantages: First, the canting of the free layer at the side region results in a reduction of side reading by reducing magnetic sensitivity in that region. Second, the CCL leads to a narrow current flow profile at the side region, therefore producing a narrow track width definition. A process for making this device is described. Said process allows some of the requirements for interface cleaning associated with prior art processes to be relaxed.

公开(公告)号：US07050273B2

公开(公告)日：2006-05-23

申请号：US10922540

申请日：2004-08-20

申请人： Cheng T. Horng ,  Mao-Min Chen ,  Chen-Jung Chien ,  Cherng-Chyi Han ,  Ru-Ying Tong ,  Chyu-Jiuh Torng ,  Hui-Chuan Wang

发明人： Cheng T. Horng ,  Mao-Min Chen ,  Chen-Jung Chien ,  Cherng-Chyi Han ,  Ru-Ying Tong ,  Chyu-Jiuh Torng ,  Hui-Chuan Wang

IPC分类号： G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B2005/3996 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49041 ,  Y10T29/49044 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A method for fabricating a longitudinally hard biased, bottom spin valve GMR sensor with a lead overlay (LOL) conducting lead configuration and a narrow effective trackwidth. The advantageous properties of the sensor are obtained by providing two novel barrier layers, one of which prevents oxidation of and Au diffusion into the free layer during annealing and etching and the other of which prevents oxidation of the capping layer during annealing so as to allow good electrical contact between the lead and the sensor stack.

摘要翻译： 一种用于制造具有引线覆盖（LOL）导线配置和窄有效轨道宽度的纵向硬偏置底部自旋阀GMR传感器的方法。 传感器的有利性质是通过提供两个新的阻挡层获得的，其中之一是防止在退火和蚀刻期间氧化和Au扩散到自由层中，另一个阻止退火期间封盖层的氧化，从而使得良好 引线和传感器堆叠之间的电接触。

公开(公告)号：US07016165B2

公开(公告)日：2006-03-21

申请号：US09822491

申请日：2001-04-02

申请人： Chen-Jung Chien ,  Chyu-Jiuh Torng ,  Cherng-Chyi Han ,  Cheng T. Horng ,  Mao-Min Chen

发明人： Chen-Jung Chien ,  Chyu-Jiuh Torng ,  Cherng-Chyi Han ,  Cheng T. Horng ,  Mao-Min Chen

IPC分类号： G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3932 ,  G11B2005/3996 ,  Y10T29/49032

摘要： A method for forming a spin-valve type abutted junction GMR sensor element with a thinner hard magnetic longitudinal bias layer having significantly improved magnetic properties in the junction region and a spin-valve type abutted junction GMR sensor element with a thinner hard magnetic longitudinal bias layer having significantly improved magnetic properties in the junction region fabricated according to that method.

摘要翻译： 用于形成具有较薄的硬磁纵向偏置层的自旋阀型抵接接头GMR传感器元件的方法，其具有在接合区域中显着改善的磁性能和具有较薄硬磁纵向偏置层的自旋阀型邻接结GMR传感器元件 在根据该方法制造的接合区域中具有显着改善的磁性能。

公开(公告)号：US06882509B2

公开(公告)日：2005-04-19

申请号：US10791021

申请日：2004-03-02

申请人： Jei-Wei Chang ,  Bernard Dieny ,  Mao-Min Chen ,  Cheng T. Horng ,  Kochan Ju ,  Simon Liao

发明人： Jei-Wei Chang ,  Bernard Dieny ,  Mao-Min Chen ,  Cheng T. Horng ,  Kochan Ju ,  Simon Liao

IPC分类号： G01R33/09 ,  G11B5/31 ,  G11B5/39 ,  H01F10/00 ,  H01F10/06 ,  H01F10/12 ,  H01F10/14 ,  H01F10/16 ,  H01F10/18 ,  H01F10/30 ,  H01F10/32 ,  H01F41/30 ,  H01L43/08 ,  H01L43/12 ,  G11B5/33 ,  G11B5/127

CPC分类号： H01F10/30 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3133 ,  G11B5/3903 ,  G11B5/3909 ,  H01F10/3272 ,  H01L43/08 ,  Y10T428/1121 ,  Y10T428/1129 ,  Y10T428/1157 ,  Y10T428/1171 ,  Y10T428/12944 ,  Y10T428/2495

摘要： Disclosed is a method of making a SVGMR sensor element. In the first embodiment a buffer layer is formed between a seed layer and a ferromagnetic (FM) free layer, the buffer layer being composed of alpha-Fe2O3 having a crystal lattice constant that is close to the FM free layer's crystal constant and has the same crystal structure. The metal oxide buffer layer enhances the specular scattering. In the second embodiment, a high conductivity layer (HCL) is formed over the buffer layer to create a spin filter-SVGMR. The HCL layer enhances the GMR ratio of the spin filter SVGMR. The third embodiment include a pinned FM layer comprising a three layer structure of a lower AP layer, a space layer (e.g., Ru) and an upper AP layer.

摘要翻译： 公开了一种制造SVGMR传感器元件的方法。 在第一实施例中，在种子层和不含铁磁性（FM）的层之间形成缓冲层，该缓冲层由α-Fe 2 O 3 3 N 3 晶格常数接近于FM自由层的晶体常数，具有相同的晶体结构。 金属氧化物缓冲层增强了镜面散射。 在第二实施例中，在缓冲层上形成高电导率层（HCL）以产生自旋滤波器-GVGMR。 HCL层增强了旋转过滤器SVGMR的GMR比。 第三实施例包括包括下AP层的三层结构，空间层（例如Ru）和上AP层的钉扎FM层。

公开(公告)号：US06785954B2

公开(公告)日：2004-09-07

申请号：US10124004

申请日：2002-04-17

申请人： Cheng T. Horng ,  Mao-Min Chen ,  Chen-Jung Chien ,  Cherng-Chyi Han ,  Ru-Ying Tong ,  Chyu-Jiuh Torng ,  Hui-Chuan Wang

发明人： Cheng T. Horng ,  Mao-Min Chen ,  Chen-Jung Chien ,  Cherng-Chyi Han ,  Ru-Ying Tong ,  Chyu-Jiuh Torng ,  Hui-Chuan Wang

IPC分类号： G11B5127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B2005/3996 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49041 ,  Y10T29/49044 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A method for fabricating a longitudinally hard biased, bottom spin valve GMR sensor with a lead overlay (LOL) conducting lead configuration and a narrow effective trackwidth. The advantageous properties of the sensor are obtained by providing two novel barrier layers, one of which prevents oxidation of and Au diffusion into the free layer during annealing and etching and the other of which prevents oxidation of the capping layer during annealing so as to allow good electrical contact between the lead and the sensor stack.

摘要翻译： 一种用于制造具有引线覆盖（LOL）导线配置和窄有效轨道宽度的纵向硬偏置底部自旋阀GMR传感器的方法。 传感器的有利性质是通过提供两个新的阻挡层获得的，其中之一是防止在退火和蚀刻期间氧化和Au扩散到自由层中，另一个阻止退火期间封盖层的氧化，从而使得良好 引线和传感器堆叠之间的电接触。

公开(公告)号：US06469875B1

公开(公告)日：2002-10-22

申请号：US09525672

申请日：2000-03-15

申请人： Mao-Min Chen ,  Po-Kang Wang ,  Cherng-Chyi Han

发明人： Mao-Min Chen ,  Po-Kang Wang ,  Cherng-Chyi Han

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3967 ,  G11B2005/3996 ,  Y10T29/49048

摘要： A structure and a method for a stitched write head having a sunken share pole. The method includes forming a bottom coil dielectric layer over the first half shared pole. Coils are formed over the bottom coil dielectric layer. Next, second half shared poles (P1) are formed over the first half shared pole (S2). We form a top coil dielectric layer over the structure. In a key step, we chemical-mechanical polish the top coil dielectric layer. A write gap layer (WG) is formed over the front second half shared pole and the top coil dielectric layer over the coils. An upper pole (P3) and hard mask are formed over the write gap layer. We etch the write gap layer and the second half shared pole (P1) using the upper pole as an etch mask to remove a portion of the second half shared pole (P1) adjacent to the write gap layer thereby forming a partially trimmed pole.

摘要翻译： 一种具有凹陷的共享极的缝合写头的结构和方法。 该方法包括在第一半共享极上形成底部线圈电介质层。 线圈形成在底部线圈电介质层上。 接下来，在第一半共享极（S2）上形成第二半共享极（P1）。 我们在结构上形成顶层线圈介电层。 在关键步骤中，我们化学机械抛光顶层线圈介电层。 写入间隙层（WG）形成在线圈上的前第二半共享极和顶部线圈电介质层上。 在写间隙层上形成上极（P3）和硬掩模。 我们使用上极蚀刻写间隙层和第二半共享极（P1）作为蚀刻掩模，以去除与写间隙层相邻的第二半共享极（P1）的一部分，从而形成部分修整的极。

公开(公告)号：US06415500B1

公开(公告)日：2002-07-09

申请号：US09482050

申请日：2000-01-13

申请人： Cherng-Chyi Han ,  Mao-Min Chen ,  Jen-Wei Koo ,  Rodney Lee ,  Li-Yan Zhu ,  Jei-Wei Chang

发明人： Cherng-Chyi Han ,  Mao-Min Chen ,  Jen-Wei Koo ,  Rodney Lee ,  Li-Yan Zhu ,  Jei-Wei Chang

IPC分类号： G11B5127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3163 ,  G11B5/3173 ,  G11B5/3903 ,  G11B5/40 ,  G11B2005/3996 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49156 ,  Y10T29/49165

摘要： Methods and structures are disclosed which avoid electrostatic charge build up and subsequent electrostatic discharge (ESD) during the wafer fabrication process of magnetoresistive (MR) or giant magnetoresistive (GMR) read/write heads of magnetic disk drives. This is achieved by designing the wafer layout and process so that the MR/GMR sensor film is shorted to the magnetic shields of the head through shorting paths so that there is an equal potential between MR/GMR sensor film and magnetic shields during the entire fabrication process.

摘要翻译： 公开了在磁阻（MR）或巨磁阻（GMR）读/磁头磁盘驱动器的晶片制造过程中避免静电电荷累积和随后的静电放电（ESD）的方法和结构。 这通过设计晶片布局和工艺来实现，使得MR / GMR传感器膜通过短路路径短路到磁头的磁屏蔽，使得在整个制造期间MR / GMR传感器膜和磁屏蔽之间具有相等的电位 处理。

公开(公告)号：US06383574B1

公开(公告)日：2002-05-07

申请号：US09360118

申请日：1999-07-23

申请人： Cherng-Chyi Han ,  Rong-Fu Xiao ,  Mao-Min Chen ,  Po-Kang Wang

发明人： Cherng-Chyi Han ,  Rong-Fu Xiao ,  Mao-Min Chen ,  Po-Kang Wang

IPC分类号： B05D500

CPC分类号： H01L43/12 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  C23C14/48 ,  G11B5/3163 ,  H01F41/302

摘要： A method for forming a magnetoresistive (MR) layer first employs a substrate over which is formed a magnetoresistive (MR) layer formed of a magnetoresistive (MR) material. There is then ion implanted selectively, while employing an ion implant method, the magnetoresistive (MR) layer to form: (1) an ion implanted portion of the magnetoresistive (MR) layer formed of an ion implanted magnetoresistive (MR) material; and (2) an adjoining non ion implanted portion of the magnetoresistive (MR) layer formed of the magnetoresistive (MR) material, where the ion implanted magnetoresistive (MR) material is a non magnetoresistive (MR) material. The method may be employed for forming within magnetoresistive (MR) sensor elements magnetoresistive (MR) layers with enhanced dimensional uniformity, and in particular enhanced overlay dimensional uniformity.

摘要翻译： 形成磁阻（MR）层的方法首先采用形成由磁阻（MR）材料形成的磁阻（MR）层的衬底。 然后选择性地离子注入，同时采用离子注入法，磁阻（MR）层形成：（1）由离子注入的磁阻（MR）材料形成的磁阻（MR）层的离子注入部分; 和（2）由磁阻（MR）材料形成的磁阻（MR）层的邻接非离子注入部分，其中离子注入磁阻（MR）材料是非磁阻（MR）材料。 该方法可以用于在具有增强的尺寸均匀性的磁阻（MR）传感器元件磁阻（MR）层内形成，特别是增强的覆盖尺寸均匀性。