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公开(公告)号：US06189483B1
公开(公告)日：2001-02-20
申请号：US08865567
申请日：1997-05-29
IPC分类号： H01L2100
CPC分类号： C23C16/45521 , C23C16/4405 , C23C16/4585 , C23C16/4586 , C23C16/507 , H01J37/321 , H01J37/3244 , H01J37/32862 , H01L21/6831 , Y10S156/915
摘要： The present invention provides an HDP-CVD tool using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers. The tool of the present invention includes: a dual RF zone inductively coupled plasma source; a dual zone gas distribution system; temperature controlled surfaces within the tool; a symmetrically shaped turbomolecular pumped chamber body; a dual cooling zone electrostatic chuck; an all ceramic/aluminum alloy chamber; and a remote plasma chamber cleaning system.
摘要翻译： 本发明提供一种HDP-CVD工具，其使用能够在晶片上具有优异的间隙填充和覆盖膜沉积的掺杂和未掺杂的二氧化硅的同时沉积和溅射。 本发明的工具包括：双RF区电感耦合等离子体源; 双区气体分配系统; 工具内的温度控制表面; 对称成形的涡轮分子抽水室体; 双冷却区静电吸盘; 全陶瓷/铝合金室; 和远程等离子体室清洁系统。
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公开(公告)号：US06175485B1
公开(公告)日：2001-01-16
申请号：US08684113
申请日：1996-07-19
IPC分类号： H02N1300
CPC分类号： H02N13/00 , Y10T279/23
摘要： The present invention provides an electrostatic chuck having a dielectric layer with improved porosity and electrical properties, and a method for fabricating the dielectric layer and applying the layer to a pedestal to form a portion of an electrostatic chuck. The dielectric layer is formed by a detonation gun process which includes igniting a fuel gas mixture to form a detonation wave and propelling aluminum oxide powder onto the pedestal at high speeds. The dielectric layer has a porosity of less than 1 percent of its total volume, which improves the electrical properties of the chuck, such as its dielectric strength and the dielectric constant. In addition, the low porosity decreases the adsorption of moisture and other gases into the dielectric layer, which further enhances the electrical properties of the chuck.
摘要翻译： 本发明提供一种静电卡盘，其具有提高孔隙率和电性能的电介质层，以及用于制造电介质层并将该层施加到基座以形成静电卡盘的一部分的方法。 电介质层通过爆震枪工艺形成，其中包括点燃燃料气体混合物以形成爆震波，并将氧化铝粉末以高速推进到基座上。 电介质层的孔隙率小于其总体积的1％，这改善了卡盘的电性能，例如其介电强度和介电常数。 此外，低孔隙率降低了水分和其他气体吸附到电介质层中，这进一步增强了卡盘的电性能。
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公开(公告)号：US07431772B2
公开(公告)日：2008-10-07
申请号：US10797286
申请日：2004-03-09
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： C23C16/45565 , C23C16/4405 , C23C16/45591
摘要： A gas distributor distributes a gas across a surface of a substrate processing chamber. The gas distributor has a hub, a baffle extending radially outward from the hub, a first set of vanes and a second set of vanes. In one version, the hub has a gas inlet and a gas outlet. The baffle has an opposing first and second surfaces. First vanes are on the first surface of the baffle and direct gas across chamber surfaces. In one version, the first vanes comprise arcuate plates that curve and taper outward from the hub. Second vanes are on the second surface of the baffle and direct gas across the second surface of the baffle. In one version, a gas feed-through tube in the hub can allow a gas to bypass the first and second set of vanes.
摘要翻译： 气体分配器将气体分布在基板处理室的表面上。 气体分配器具有毂，从轮毂径向向外延伸的挡板，第一组叶片和第二组叶片。 在一个版本中，轮毂具有气体入口和气体出口。 挡板具有相对的第一和第二表面。 第一个叶片位于挡板的第一个表面上，并直接通过气室表面。 在一个版本中，第一叶片包括从轮毂向外弯曲和渐缩的弧形板。 第二个叶片位于挡板的第二个表面上，直接通过挡板的第二个表面。 在一个版本中，轮毂中的气体馈通管可允许气体绕过第一组叶片和第二组叶片。
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公开(公告)号：US07399388B2
公开(公告)日：2008-07-15
申请号：US10627228
申请日：2003-07-25
CPC分类号： C23C16/45542 , C23C16/402 , C23C16/507
摘要： A method of depositing a silica glass insulating film over a substrate. In one embodiment the method comprises exposing the substrate to a silicon-containing reactant introduced into a chamber in which the substrate is disposed such that one or more layers of the silicon-containing reactant are adsorbed onto the substrate; purging or evacuating the chamber of the silicon-containing reactant; converting the silicon-containing reactant into a silica glass insulating compound by exposing the substrate to oxygen radicals formed from a second reactant while biasing the substrate to promote a sputtering effect, wherein an average atomic mass of all atomic constituents in the second reactant is less than or equal to an average atomic mass of oxygen; and repeating the exposing, purging/evacuating and exposing sequence a plurality of times until a desired film thickness is reached.
摘要翻译： 一种在基板上沉积石英玻璃绝缘膜的方法。 在一个实施方案中，该方法包括将基底暴露于引入到其中设置基底的室中的含硅反应物，使得一层或多层含硅反应物被吸附到基底上; 吹扫或抽空含硅反应物的室; 通过将衬底暴露于由第二反应物形成的氧自由基，同时偏置衬底以促进溅射效应，将含硅反应物转化为石英玻璃绝缘化合物，其中第二反应物中所有原子组分的平均原子质量小于 或等于氧的平均原子质量; 并重复曝光，吹扫/排空和曝光序列多次，直至达到所需的膜厚度。
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公开(公告)号：US20050199184A1
公开(公告)日：2005-09-15
申请号：US10797286
申请日：2004-03-09
CPC分类号： C23C16/45565 , C23C16/4405 , C23C16/45591
摘要： A gas distributor distributes a gas across a surface of a substrate processing chamber. The gas distributor has a hub, a baffle extending radially outward from the hub, a first set of vanes and a second set of vanes. In one version, the hub has a gas inlet and a gas outlet. The baffle has an opposing first and second surfaces. First vanes are on the first surface of the baffle and direct gas across chamber surfaces. In one version, the first vanes comprise arcuate plates that curve and taper outward from the hub. Second vanes are on the second surface of the baffle and direct gas across the second surface of the baffle. In one version, a gas feed-through tube in the hub can allow a gas to bypass the first and second set of vanes.
摘要翻译： 气体分配器将气体分布在基板处理室的表面上。 气体分配器具有毂，从轮毂径向向外延伸的挡板，第一组叶片和第二组叶片。 在一个版本中，轮毂具有气体入口和气体出口。 挡板具有相对的第一和第二表面。 第一个叶片位于挡板的第一个表面上，并直接通过气室表面。 在一个版本中，第一叶片包括从轮毂向外弯曲和渐缩的弧形板。 第二个叶片位于挡板的第二个表面上，直接通过挡板的第二个表面。 在一个版本中，轮毂中的气体馈通管可允许气体绕过第一组叶片和第二组叶片。
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36.发明申请公开(公告)号：US20050124166A1
公开(公告)日：2005-06-09
申请号：US11036632
申请日：2005-01-13
IPC分类号： C23C16/04 , C23C16/44 , C23C16/455 , C23C16/509 , C30B25/10 , H01L21/311 , H01L21/316 , H01L21/768
CPC分类号： C23C16/45523 , C23C16/045 , C23C16/509 , C30B25/105 , H01J37/32935 , H01L21/02164 , H01L21/02274 , H01L21/31116 , H01L21/31612 , H01L21/76837
摘要： A continuous in situ process of deposition, etching, and deposition is provided for forming a film on a substrate using a plasma process. The etch-back may be performed without separate plasma activation of the etchant gas. The sequence of deposition, etching, and deposition permits features with high aspect ratios to be filled, while the continuity of the process results in improved uniformity.
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公开(公告)号：US20050019494A1
公开(公告)日：2005-01-27
申请号：US10627228
申请日：2003-07-25
IPC分类号： C23C16/40 , C23C16/44 , C23C16/455 , C23C16/507
CPC分类号： C23C16/45542 , C23C16/402 , C23C16/507
摘要： A method of depositing a silica glass insulating film over a substrate. In one embodiment the method comprises exposing the substrate to a silicon-containing reactant introduced into a chamber in which the substrate is disposed such that one or more layers of the silicon-containing reactant are adsorbed onto the substrate; purging or evacuating the chamber of the silicon-containing reactant; converting the silicon-containing reactant into a silica glass insulating compound by exposing the substrate to oxygen radicals formed from a second reactant while biasing the substrate to promote a sputtering effect, wherein an average atomic mass of all atomic constituents in the second reactant is less than or equal to an average atomic mass of oxygen; and repeating the exposing, purging/evacuating and exposing sequence a plurality of times until a desired film thickness is reached.
摘要翻译： 一种在基板上沉积石英玻璃绝缘膜的方法。 在一个实施方案中，该方法包括将基底暴露于引入到其中设置基底的室中的含硅反应物，使得一层或多层含硅反应物被吸附到基底上; 吹扫或抽空含硅反应物的室; 通过将衬底暴露于由第二反应物形成的氧自由基，同时偏置衬底以促进溅射效应，将含硅反应物转化为石英玻璃绝缘化合物，其中第二反应物中所有原子组分的平均原子质量小于 或等于氧的平均原子质量; 并重复曝光，吹扫/排空和曝光序列多次，直至达到所需的膜厚度。
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