WHITE LIGHT-EMITTING SEMICONDUCTOR DEVICES
    36.
    发明申请
    WHITE LIGHT-EMITTING SEMICONDUCTOR DEVICES 有权
    白色发光半导体器件

    公开(公告)号:US20140042896A1

    公开(公告)日:2014-02-13

    申请号:US14041171

    申请日:2013-09-30

    IPC分类号: H01L33/08

    摘要: A white light-emitting semiconductor device having improved reproducibility of bright red. The device outputs light having a blue component, a green component, and a red component. Each of the light components (blue, green, and red) is based on a light-emitting semiconductor element and/or a phosphor that absorbs light emitted by a light-emitting semiconductor element and emits light through wavelength conversion. The outputted light has a spectrum which has a maximum wavelength in the range of 615-645 nm, and the intensity at a wavelength of 580 nm of the outputted light, which has been normalized with respect to luminous flux, is 80-100% of the intensity at a wavelength of 580 nm of standard light for color rendering evaluation, which has been normalized with respect to luminous flux.

    摘要翻译: 一种具有亮红色再现性的白色发光半导体器件。 该装置输出具有蓝色分量,绿色分量和红色分量的光。 光分量(蓝,绿,红)各自以发光半导体元件和/或荧光体为基础,吸收由发光半导体元件发出的光并通过波长转换发光。 输出的光具有在615-645nm的范围内具有最大波长的光谱,并且已经相对于光通量归一化的输出光的波长580nm处的强度为80-100% 用于显色评估的标准光的波长580nm处的强度已经相对于光通量被归一化。

    White light source, backlight, liquid crystal display apparatus, and illuminating apparatus
    39.
    发明授权
    White light source, backlight, liquid crystal display apparatus, and illuminating apparatus 有权
    白光源,背光源,液晶显示装置和照明装置

    公开(公告)号:US08344407B2

    公开(公告)日:2013-01-01

    申请号:US12995352

    申请日:2009-05-28

    IPC分类号: H01L33/00

    摘要: A white light source includes: an insulating substrate; a light-emitting diode chip provided on the insulating substrate and that emits ultraviolet light with a wavelength of 330 nm to 410 nm; and a phosphor layer formed to cover the light-emitting diode chip, including a red emitting phosphor, a green emitting phosphor, and a blue emitting phosphor as a phosphor, and the phosphors are dispersed in a cured transparent resin, wherein when it is assumed that the shortest distance between a surface of the phosphor layer and a peripheral portion of the light-emitting diode chip is t(mm) and the mean free path defined by the following expression (1) is L(mm), the t and L satisfy 3.2≦t/L.[Expression 1] L=1/(n×σ)  (1) (n: number of phosphors per unit volume of the phosphor layer (pcs/mm3), and σ: average cross section area of a phosphor in the phosphor layer (mm2)).

    摘要翻译: 白光源包括:绝缘基板; 设置在绝缘基板上并发射波长为330nm〜410nm的紫外光的发光二极管芯片; 以及形成为覆盖发光二极管芯片的荧光体层,其包括红色发光荧光体,绿色荧光体和作为荧光体的蓝色荧光体,并且将荧光体分散在固化的透明树脂中,其中假设 荧光体层的表面与发光二极管芯片的周边部分之间的最短距离为t(mm),由下式(1)定义的平均自由程是L(mm),t和L 满足3.2≦̸ t / L。 [表达式1] L = 1 /(n×&sgr)(1)(n:荧光体层的每单位体积的荧光体的个数(pcs / mm3)),荧光体的荧光体的平均截面积 层(mm2))。