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    Method and System for Optimization of an Image on a Substrate to be Manufactured Using Optical Lithography
    31.
    发明申请
    Method and System for Optimization of an Image on a Substrate to be Manufactured Using Optical Lithography 审中-公开
    使用光学平版印刷法制造的基板上图像优化的方法和系统

    公开(公告)号：US20130070222A1

    公开(公告)日：2013-03-21

    申请号：US13236610

    申请日：2011-09-19

    Applicant: Akira Fujimura

    Inventor： Akira Fujimura

    IPC: G03B27/42

    CPC classification number: G03F1/36 ,  G03F7/70441 ,  G03F7/705 ,  H01J2237/31764 ,  H01J2237/31771 ,  H01J2237/31776

    Abstract: A method and system for optimization of an image to be printed on a substrate using optical lithography is disclosed in which a set of charged particle beam shots, some of which overlap, is determined so as to form a target pattern on a surface such as a reticle. The charged particle beam shots are simulated to determine the pattern that would be formed on the surface. Next, a substrate image is calculated from the simulated surface pattern. One or more shots in the set of shots are then modified to improve the calculated substrate image.

    Abstract translation: 公开了一种用于使用光刻技术来优化要印刷在基板上的图像的方法和系统，其中确定一组带电粒子束的照片，其中一些重叠，以便在表面上形成目标图案，例如 标线 模拟带电粒子射束以确定将在表面上形成的图案。 接下来，从模拟表面图案计算基板图像。 然后修改该组拍摄中的一个或多个照片以改善计算的底物图像。

    Charged particle beam exposure method
    32.
    发明授权
    Charged particle beam exposure method 失效
    充电颗粒光束曝光方法

    公开(公告)号：US5082762A

    公开(公告)日：1992-01-21

    申请号：US425013

    申请日：1989-10-23

    Applicant: Yasushi Takahashi

    Inventor： Yasushi Takahashi

    IPC: H01L21/30 ,  G03F7/20 ,  H01J37/317 ,  H01L21/027

    CPC classification number: B82Y10/00 ,  B82Y40/00 ,  G03F7/2022 ,  H01J37/3174 ,  H01J2237/31769 ,  H01J2237/31771 ,  Y10S430/168

    Abstract: A method for selectively exposing a resist layer using a charged particle beam to form a desired pattern. The method includes the steps of repeatedly exposing a basic pattern segment using a charged particle beam so as to expose a pattern within a first predetermined region of the resist layer by a main exposure. The pattern within the first predetermined region is a multiple repetition of the basic pattern segment. A second predetermined region of the layer is exposed by auxiliary exposure at an intensity level lower than that of the main exposure. The second predetermined region excludes the central portions of the first predetermined region and includes a region in which a proximity effect occurs due to the main exposure.

    Electron beam lithography system for delineating a desired pattern on a target by means of electron beams
    33.
    发明授权
    Electron beam lithography system for delineating a desired pattern on a target by means of electron beams 失效
    电子束光刻系统，用于通过电子束描绘目标上的期望图案

    公开(公告)号：US4868395A

    公开(公告)日：1989-09-19

    申请号：US168605

    申请日：1988-03-04

    Applicant: Izumi Kasahara ,  Yasunobu Kawauchi ,  Yoshio Suzuki

    Inventor： Izumi Kasahara ,  Yasunobu Kawauchi ,  Yoshio Suzuki

    IPC: H01J37/317

    CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/31771

    Abstract: In a system for continuously exposing desired patterns and their backgrounds on the surface of a target, a first electron beam emitted from a first electron gun is converged by condenser lenses and an objective lens to be focused on the surface of the target. A second electron beam emitted from a second electron gun is defocused at the target surface by a condenser lens and a deflecting coil. A deflector selects the first or second electron beams. While the target surface is being scanned with the selected electron beam, the beam is deflected by a scanning deflector. In delineating a pattern, the target surface is scanned with the first electron beam. In delineating a background, on the other hand, the target surface is scanned with the second electron beam.

    Abstract translation: 在用于在目标表面上持续曝光所需图案及其背景的系统中，从第一电子枪发射的第一电子束由会聚透镜和物镜聚焦在目标表面上。 从第二电子枪发射的第二电子束通过聚光透镜和偏转线圈在目标表面散焦。 偏转器选择第一或第二电子束。 当目标表面被所选择的电子束扫描时，光束被扫描偏转器偏转。 在描绘图案时，用第一电子束扫描目标表面。 另一方面，在描绘背景时，用第二电子束扫描目标表面。

    Electron beam proximity effect correction by reverse field pattern exposure
    34.
    发明授权
    Electron beam proximity effect correction by reverse field pattern exposure 失效
    通过反向场图案曝光的电子束接近效应校正

    公开(公告)号：US4463265A

    公开(公告)日：1984-07-31

    申请号：US389306

    申请日：1982-06-17

    Applicant: Geraint Owen ,  Paul Rissman

    Inventor： Geraint Owen ,  Paul Rissman

    IPC: H01L21/027 ,  G03F7/20 ,  H01J37/317 ,  H01L21/30 ,  H01J3/00

    CPC classification number: B82Y10/00 ,  B82Y40/00 ,  G03F7/2061 ,  H01J37/3174 ,  H01L21/30 ,  H01J2237/31769 ,  H01J2237/31771

    Abstract: In electron beam lithography, a beam of incident electrons exposes a preselected circuit pattern in a thin resist layer deposited on top of a substrate to be etched. Some of the electrons scatter from the substrate back into the resist layer producing an undesired exposure which produces variable resolution of features. In accordance with the disclosed technique, the region of the resist which is complementary to the desired circuit pattern is also exposed by an electron beam which has been adjusted to produce an exposure approximating that due to backscattering. This additional exposure removes the spatial variability in resolution attainable by the electron beam lithography.

    Abstract translation: 在电子束光刻中，入射电子束在沉积在要蚀刻的衬底顶部的薄抗蚀剂层中暴露预选电路图案。 一些电子从衬底返回到抗蚀剂层中，产生不期望的暴露，产生可变分辨率的特征。 根据所公开的技术，与期望的电路图案互补的抗蚀剂的区域也被电子束曝光，电子束已被调整以产生接近于由于后向散射引起的曝光。 这种额外的曝光消除了通过电子束光刻获得的分辨率的空间变异性。

    Multi charged particle beam writing apparatus and multi charged particle beam writing method
    39.
    发明授权
    Multi charged particle beam writing apparatus and multi charged particle beam writing method 有权
    多带电粒子束写入装置和多带电粒子束写入方法

    公开(公告)号：US09336994B2

    公开(公告)日：2016-05-10

    申请号：US14662612

    申请日：2015-03-19

    Applicant: NuFlare Technology, Inc.

    Inventor： Yasuo Kato

    IPC: H01J37/00 ,  H01J37/317 ,  G03F1/78 ,  H01J37/302 ,  B82Y10/00 ,  B82Y40/00

    CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/78 ,  H01J37/3026 ,  H01J2237/31764 ,  H01J2237/31771 ,  H01J2237/31776 ,  H01J2237/31796

    Abstract: A charged particle beam writing apparatus includes a storage unit to store each pattern data of plural figure patterns arranged in each of plural small regions made by virtually dividing a writing region of a target workpiece to be written on which resist being coated. The charged particle beam writing apparatus further including an assignment unit to assign each pattern data of each figure pattern to be arranged in each of the plural small regions concerned, and a writing unit to write, for each of plural groups, each figure pattern in each of the plural small regions concerned by using a charged particle beam.

    Abstract translation: 带电粒子束写入装置包括：存储单元，用于存储多个图形图案中的每个图案数据，所述多个图形图案布置在通过实际上划分要涂覆的抗蚀剂的目标工件的写入区域而制成的多个小区域中。 所述带电粒子束写入装置还包括分配单元，用于分配要布置在所述多个小区域中的每一个中的每个图形模式的每个图案数据;以及写入单元，用于为每个所述多个组中的每一个写入每个图形模式 的多个小区域使用带电粒子束。

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