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公开(公告)号:US2589399A
公开(公告)日:1952-03-18
申请号:US26465552
申请日:1952-01-02
申请人: SIDNEY KORNBLUM
发明人: SIDNEY KORNBLUM
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公开(公告)号:US2230969A
公开(公告)日:1941-02-04
申请号:US28346439
申请日:1939-07-08
申请人: CHICAGO DEV CO
发明人: DEAN REGINALD S
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公开(公告)号:US1904175A
公开(公告)日:1933-04-18
申请号:US62030532
申请日:1932-06-30
发明人: SWARTZ CARL E , PHILLIPS ALBERT J
IPC分类号: C22C20/00
CPC分类号: C22C20/00
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34.
公开(公告)号:US10699740B2
公开(公告)日:2020-06-30
申请号:US15357333
申请日:2016-11-21
发明人: Yuhang Cheng , Tong Zhao , Michael C. Kautzky , Ed F. Rejda , Kurt W. Wierman , Scott Franzen , Sethuraman Jayashankar , Sarbeswar Sahoo , Justin Glen Brons , Steve C. Riemer , Jie Gong , Michael Allen Seigler
IPC分类号: G11B11/00 , G11B5/40 , G11B13/08 , G11B5/31 , G11B7/1387 , G11B7/24059 , G11B5/60 , C23C14/58 , C22C5/02 , C22C5/06 , C22C9/02 , C22C9/08 , C22C11/04 , C22C13/00 , C22C18/02 , C22C19/03 , C22C20/00 , C22C21/00 , C22C21/02 , C22C21/10 , C22C22/00 , C22C27/00 , C22C27/02 , C22C27/06 , C22C38/06 , G11B5/48 , C01F7/00 , C01G5/00 , B32B15/01 , C22C5/04 , C22C5/10 , C22C9/00 , C22C9/04 , C22C9/05 , C22C9/06 , C22C9/10 , C22C19/07 , C22C21/06 , C22C24/00 , C22C28/00 , C22C30/02 , G11B5/00
摘要: A device including a near field transducer, the near field transducer including gold (Au), silver (Ag), copper (Cu), or aluminum (Al), and at least two other secondary atoms, the at least two other secondary atoms selected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), manganese (Mn), tellurium (Te), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), germanium (Ge), hydrogen (H), iodine (I), rubidium (Rb), selenium (Se), terbium (Tb), nitrogen (N), oxygen (O), carbon (C), antimony (Sb), gadolinium (Gd), samarium (Sm), thallium (Tl), cadmium (Cd), neodymium (Nd), phosphorus (P), lead (Pb), hafnium (Hf), niobium (Nb), erbium (Er), zinc (Zn), magnesium (Mg), palladium (Pd), vanadium (V), zinc (Zn), chromium (Cr), iron (Fe), lithium (Li), nickel (Ni), platinum (Pt), sodium (Na), strontium (Sr), calcium (Ca), yttrium (Y), thorium (Th), beryllium (Be), thulium (Tm), erbium (Er), ytterbium (Yb), promethium (Pm), neodymium (Nd cobalt (Co), cerium (Ce), lanthanum (La), praseodymium (Pr), or combinations thereof.
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公开(公告)号:US10234410B2
公开(公告)日:2019-03-19
申请号:US14384518
申请日:2012-03-12
IPC分类号: G01N1/00 , G01N25/12 , G01N25/02 , G01N33/20 , C22C1/02 , C22C33/00 , C22C33/04 , C22C1/00 , C22C5/02 , C22C5/04 , C22C5/06 , C22C7/00 , C22C11/00 , C22C12/00 , C22C13/00 , C22C16/00 , C22C20/00 , C22C22/00 , C22C24/00 , C22C27/00 , C22C27/02 , C22C27/04 , C22C27/06 , C22C28/00 , C22C38/00 , C22C43/00
摘要: Identifying a stable phase of a binary alloy comprising a solute element and a solvent element. In one example, at least two thermodynamic parameters associated with grain growth and phase separation of the binary alloy are determined, and the stable phase of the binary alloy is identified based on the first thermodynamic parameter and the second thermodynamic parameter, wherein the stable phase is one of a stable nanocrystalline phase, a metastable nanocrystalline phase, and a non-nanocrystalline phase.
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公开(公告)号:US20180366153A1
公开(公告)日:2018-12-20
申请号:US15952506
申请日:2018-04-13
发明人: Yuhang Cheng , Tong Zhao , Michael C. Kautzky , Ed F. Rejda , Kurt W. Wierman , Scott Franzen , Sethuraman Jayashankar , Sarbeswar Sahoo , Jie Gong , Michael Allen Seigler
IPC分类号: G11B13/08 , G11B7/24059 , C01F7/00 , C01G5/00 , C22C5/02 , C22C5/06 , C22C9/02 , C22C9/08 , C22C11/04 , C22C13/00 , C22C18/02 , C22C19/03 , C22C20/00 , C22C21/00 , C22C21/02 , G11B7/1387 , G11B5/60 , G11B5/48 , G11B5/31 , C23C14/58 , C22C38/06 , C22C27/06 , C22C27/02 , C22C27/00 , C22C22/00 , C22C21/10 , C22C9/04 , G11B5/00 , C22C9/05 , C22C28/00 , C22C30/02 , C22C9/06 , B32B15/01 , C22C9/10 , C22C21/06 , C22C5/10 , C22C9/00 , C22C24/00 , C22C5/04 , C22C19/07
CPC分类号: G11B13/08 , B32B15/01 , B32B15/018 , C01F7/00 , C01G5/00 , C22C5/02 , C22C5/04 , C22C5/06 , C22C5/10 , C22C9/00 , C22C9/02 , C22C9/04 , C22C9/05 , C22C9/06 , C22C9/08 , C22C9/10 , C22C11/04 , C22C13/00 , C22C18/02 , C22C19/03 , C22C19/07 , C22C20/00 , C22C21/00 , C22C21/003 , C22C21/02 , C22C21/06 , C22C21/10 , C22C22/00 , C22C24/00 , C22C27/00 , C22C27/02 , C22C27/025 , C22C27/06 , C22C28/00 , C22C30/02 , C22C38/06 , C23C14/5833 , G11B5/3106 , G11B5/314 , G11B5/3163 , G11B5/4866 , G11B5/6088 , G11B7/1387 , G11B7/24059 , G11B2005/0021
摘要: A device including a near field transducer, the near field transducer including gold (Au) and at least one other secondary atom, the at least one other secondary atom selected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), hafnium (Hf), niobium (Nb), manganese (Mn), antimony (Sb), tellurium (Te), carbon (C), nitrogen (N), and oxygen (O), and combinations thereof; erbium (Er), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), zinc (Zn), and combinations thereof; and barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), gadolinium (Gd), germanium (Ge), hydrogen (H), iodine (I), osmium (Os), phosphorus (P), rubidium (Rb), rhenium (Re), selenium (Se), samarium (Sm), terbium (Tb), thallium (Th), and combinations thereof.
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公开(公告)号:US09870793B2
公开(公告)日:2018-01-16
申请号:US15064977
申请日:2016-03-09
IPC分类号: G11B13/08 , G11B5/31 , G11B7/1387 , G11B7/24059 , C22C5/02 , C22C5/06 , C22C9/02 , C22C9/08 , C22C11/04 , C22C13/00 , C22C18/02 , C22C19/03 , C22C20/00 , C22C21/00 , C22C21/02 , C22C21/10 , C22C22/00 , C22C27/00 , C22C27/02 , C22C27/06 , C22C38/06 , G11B5/48 , C01F7/00 , C01G5/00 , G11B5/60 , C23C14/58 , C22C5/04 , C22C5/10 , C22C9/00 , C22C9/04 , C22C9/05 , C22C9/06 , C22C9/10 , C22C19/07 , C22C21/06 , C22C24/00 , C22C28/00 , C22C30/02 , G11B5/00 , B32B15/01
CPC分类号: G11B13/08 , B32B15/01 , B32B15/018 , C01F7/00 , C01G5/00 , C22C5/02 , C22C5/04 , C22C5/06 , C22C5/10 , C22C9/00 , C22C9/02 , C22C9/04 , C22C9/05 , C22C9/06 , C22C9/08 , C22C9/10 , C22C11/04 , C22C13/00 , C22C18/02 , C22C19/03 , C22C19/07 , C22C20/00 , C22C21/00 , C22C21/003 , C22C21/02 , C22C21/06 , C22C21/10 , C22C22/00 , C22C24/00 , C22C27/00 , C22C27/02 , C22C27/025 , C22C27/06 , C22C28/00 , C22C30/02 , C22C38/06 , C23C14/5833 , G11B5/3106 , G11B5/314 , G11B5/3163 , G11B5/4866 , G11B5/6088 , G11B7/1387 , G11B7/24059 , G11B2005/0021
摘要: A method of forming a near field transducer (NFT) layer, the method including depositing a film of a primary element, the film having a film thickness and a film expanse; and implanting at least one secondary element into the primary element, wherein the NFT layer includes the film of the primary element doped with the at least one secondary element.
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38.Materials for near field transducers, near field tranducers containing same, and methods of forming 有权
标题翻译: 用于近场换能器的材料,包含其的近场转换器和形成方法公开(公告)号:US09502070B2
公开(公告)日:2016-11-22
申请号:US14313717
申请日:2014-06-24
发明人: Yuhang Cheng , Tong Zhao , Michael C. Kautzky , Ed F. Rejda , Kurt W. Wierman , Scott Franzen , Sethuraman Jayashankar , Sarbeswar Sahoo , Justin Glen Brons , Steve C. Riemer , Jie Gong , Michael Allen Seigler
IPC分类号: G11B11/00 , G11B5/40 , G11B13/08 , G11B5/31 , G11B7/1387 , G11B7/24059 , C22C5/02 , C22C5/06 , C22C9/02 , C22C9/08 , C22C11/04 , C22C13/00 , C22C18/02 , C22C19/03 , C22C20/00 , C22C21/00 , C22C21/02 , C22C21/10 , C22C22/00 , C22C27/00 , C22C27/02 , C22C27/06 , C22C38/06 , G11B5/48 , C01F7/00 , C01G5/00 , G11B5/60 , C23C14/58 , C22C5/04 , C22C5/10 , C22C9/00 , C22C9/04 , C22C9/05 , C22C9/06 , C22C9/10 , C22C19/07 , C22C21/06 , C22C24/00 , C22C28/00 , C22C30/02 , G11B5/00 , B32B15/01
CPC分类号: G11B13/08 , B32B15/01 , B32B15/018 , C01F7/00 , C01G5/00 , C22C5/02 , C22C5/04 , C22C5/06 , C22C5/10 , C22C9/00 , C22C9/02 , C22C9/04 , C22C9/05 , C22C9/06 , C22C9/08 , C22C9/10 , C22C11/04 , C22C13/00 , C22C18/02 , C22C19/03 , C22C19/07 , C22C20/00 , C22C21/00 , C22C21/003 , C22C21/02 , C22C21/06 , C22C21/10 , C22C22/00 , C22C24/00 , C22C27/00 , C22C27/02 , C22C27/025 , C22C27/06 , C22C28/00 , C22C30/02 , C22C38/06 , C23C14/5833 , G11B5/3106 , G11B5/314 , G11B5/3163 , G11B5/4866 , G11B5/6088 , G11B7/1387 , G11B7/24059 , G11B2005/0021
摘要: A device including a near field transducer, the near field transducer including gold (Au), silver (Ag), copper (Cu), or aluminum (Al), and at least two other secondary atoms, the at least two other secondary atoms selected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), manganese (Mn), tellurium (Te), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), germanium (Ge), hydrogen (H), iodine (I), rubidium (Rb), selenium (Se), terbium (Tb), nitrogen (N), oxygen (O), carbon (C), antimony (Sb), gadolinium (Gd), samarium (Sm), thallium (Tl), cadmium (Cd), neodymium (Nd), phosphorus (P), lead (Pb), hafnium (Hf), niobium (Nb), erbium (Er), zinc (Zn), magnesium (Mg), palladium (Pd), vanadium (V), zinc (Zn), chromium (Cr), iron (Fe), lithium (Li), nickel (Ni), platinum (Pt), sodium (Na), strontium (Sr), calcium (Ca), yttrium (Y), thorium (Th), beryllium (Be), thulium (Tm), erbium (Er), ytterbium (Yb), promethium (Pm), neodymium (Nd cobalt (Co), cerium (Ce), lanthanum (La), praseodymium (Pr), or combinations thereof.
摘要翻译: 一种包括近场换能器的装置,包括金(Au),银(Ag),铜(Cu)或铝(Al)的近场换能器和至少两个其它次级原子,所选择的至少两个其它次级原子 来自:硼(B),铋(Bi),铟(In),硫(S),硅(Si),锡(Sn),锰(Mn),碲(Te),钬(Ho) ),镨(Pr),钪(Sc),铀(U),钡(Ba),氯(Cl),铯(Cs),镝(Dy),铕(Eu),氟(F) ),氢(H),碘(I),铷(Rb),硒(Se),铽(Tb),氮(N),氧(O),碳(C),锑(Sb) ),钐(Sm),铊(Tl),镉(Cd),钕(Nd),磷(P),铅(Pb),铪(Hf),铌(Nb),铒(Er) ),镁(Mg),钯(Pd),钒(V),锌(Zn),铬(Cr),铁(Fe),锂(Li),镍(Ni),铂(Pt) ),锶(Sr),钙(Ca),钇(Y),钍(Th),铍(B 铕(Tm),铒(Er),镱(Yb),ium(Pm),钕(Nd钴(Co),铈(Ce),镧(La),镨(Pr)
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39.Materials for near field transducers and near field transducers containing same 有权
标题翻译: 用于近场换能器和含有相同场的换能器的近场换能器材料公开(公告)号:US09281002B2
公开(公告)日:2016-03-08
申请号:US14313528
申请日:2014-06-24
IPC分类号: G11B11/00 , G11B13/08 , G11B5/31 , G11B7/1387 , C22C5/02 , C22C5/06 , C22C9/02 , C22C9/08 , C22C11/04 , C22C13/00 , C22C18/02 , C22C19/03 , C22C20/00 , C22C21/00 , C22C21/02 , C22C21/10 , C22C22/00 , C22C27/00 , C22C27/02 , C22C27/06 , C22C38/06 , G11B5/48 , C01F7/00 , C01G5/00 , G11B5/60 , C23C14/58 , C22C5/04 , C22C5/10 , C22C9/00 , C22C9/04 , C22C9/05 , C22C9/06 , C22C9/10 , C22C19/07 , C22C21/06 , C22C24/00 , C22C28/00 , C22C30/02 , G11B5/00 , B32B15/01
CPC分类号: G11B13/08 , B32B15/01 , B32B15/018 , C01F7/00 , C01G5/00 , C22C5/02 , C22C5/04 , C22C5/06 , C22C5/10 , C22C9/00 , C22C9/02 , C22C9/04 , C22C9/05 , C22C9/06 , C22C9/08 , C22C9/10 , C22C11/04 , C22C13/00 , C22C18/02 , C22C19/03 , C22C19/07 , C22C20/00 , C22C21/00 , C22C21/003 , C22C21/02 , C22C21/06 , C22C21/10 , C22C22/00 , C22C24/00 , C22C27/00 , C22C27/02 , C22C27/025 , C22C27/06 , C22C28/00 , C22C30/02 , C22C38/06 , C23C14/5833 , G11B5/3106 , G11B5/314 , G11B5/3163 , G11B5/4866 , G11B5/6088 , G11B7/1387 , G11B7/24059 , G11B2005/0021
摘要: Disclosed herein are near field transducers (NFTs) that include either silver, copper, or aluminum and one or more secondary elements.
摘要翻译: 本文公开了包括银,铜或铝和一个或多个次要元素的近场换能器(NFT)。
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40.METAL DEPOSITION USING ORGANIC VAPOR PHASE DEPOSITION (VPD) SYSTEM 审中-公开
标题翻译: 使用有机蒸气相沉积(VPD)系统的金属沉积公开(公告)号:US20150064483A1
公开(公告)日:2015-03-05
申请号:US14476058
申请日:2014-09-03
IPC分类号: C23C14/24 , C22C24/00 , C22C20/00 , C22C23/00 , C22C18/00 , H01L51/00 , C22C28/00 , C22C22/00 , C22C5/06 , C22C21/00 , C22C13/00 , C22C11/00 , C23C14/14 , C22C12/00
CPC分类号: C23C14/24 , B32B15/01 , C22C18/00 , C22C23/00 , C23C14/20 , C23C14/228 , C23C14/541 , H01L51/0021 , Y10T428/31678
摘要: A method of depositing a film of a metal having a volatilization temperature higher than 350° C., as well as, a composite material including the same are disclosed. The method can include providing the source material in a vacuum deposition processing chamber, and providing a substrate in the vacuum deposition processing chamber. The substrate can be spaced apart from, but in fluid communication with, the source material, and also maintained at a substrate temperature that is lower than the volatilization temperature. The method can also include reducing an internal pressure of the vacuum deposition processing chamber to a pressure between 0.1 and 14,000 pascals; volatilizing the source material into a volatilized metal by heating the source material to a first temperature that is higher than the volatilization temperature; and transporting the volatilized metal to the substrate using a heated carrier gas, whereby the volatilized metal deposits on the substrate and forms the metal film.
摘要翻译: 公开了一种沉积挥发温度高于350℃的金属膜以及包含其的复合材料的方法。 该方法可以包括在真空沉积处理室中提供源材料,并在真空沉积处理室中提供衬底。 衬底可以与源材料间隔开但与源材料流体连通,并且还保持在低于挥发温度的衬底温度。 该方法还可以包括将真空沉积处理室的内部压力降低至0.1至14,000帕斯卡之间的压力; 通过将源材料加热至高于挥发温度的第一温度将源材料挥发成挥发的金属; 并使用加热的载气将挥发的金属输送到基底,由此挥发的金属沉积在基底上并形成金属膜。
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