METAL DEPOSITION USING ORGANIC VAPOR PHASE DEPOSITION (VPD) SYSTEM
    40.
    发明申请
    METAL DEPOSITION USING ORGANIC VAPOR PHASE DEPOSITION (VPD) SYSTEM 审中-公开
    使用有机蒸气相沉积(VPD)系统的金属沉积

    公开(公告)号:US20150064483A1

    公开(公告)日:2015-03-05

    申请号:US14476058

    申请日:2014-09-03

    摘要: A method of depositing a film of a metal having a volatilization temperature higher than 350° C., as well as, a composite material including the same are disclosed. The method can include providing the source material in a vacuum deposition processing chamber, and providing a substrate in the vacuum deposition processing chamber. The substrate can be spaced apart from, but in fluid communication with, the source material, and also maintained at a substrate temperature that is lower than the volatilization temperature. The method can also include reducing an internal pressure of the vacuum deposition processing chamber to a pressure between 0.1 and 14,000 pascals; volatilizing the source material into a volatilized metal by heating the source material to a first temperature that is higher than the volatilization temperature; and transporting the volatilized metal to the substrate using a heated carrier gas, whereby the volatilized metal deposits on the substrate and forms the metal film.

    摘要翻译: 公开了一种沉积挥发温度高于350℃的金属膜以及包含其的复合材料的方法。 该方法可以包括在真空沉积处理室中提供源材料,并在真空沉积处理室中提供衬底。 衬底可以与源材料间隔开但与源材料流体连通,并且还保持在低于挥发温度的衬底温度。 该方法还可以包括将真空沉积处理室的内部压力降低至0.1至14,000帕斯卡之间的压力; 通过将源材料加热至高于挥发温度的第一温度将源材料挥发成挥发的金属; 并使用加热的载气将挥发的金属输送到基底,由此挥发的金属沉积在基底上并形成金属膜。