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    Scalable language infrastructure for electronic system level tools
    391.
    发明授权
    Scalable language infrastructure for electronic system level tools 有权
    电子系统级工具的可扩展语言基础设施

    公开(公告)号：US08856731B2

    公开(公告)日：2014-10-07

    申请号：US13356472

    申请日：2012-01-23

    Applicant: Rajesh Kumar ,  Sanjay Kumar Jain

    Inventor： Rajesh Kumar ,  Sanjay Kumar Jain

    IPC: G06F9/44 ,  G06F9/45

    CPC classification number: G06F8/36

    Abstract: Systems and methods of scalable language infrastructure for electronic system level tools. In accordance with embodiments of the present invention, knowledge about types, functions and the like is encapsulated in a plurality of intelligent components called active component extension modules that are external to the infrastructure. The infrastructure implements a communication mechanism between the clients and these intelligent components, and acts as a common backbone. The infrastructure itself does not maintain any knowledge about any client, types, functions, etc. In accordance with a method embodiment of the present invention, a request is received from a client of a language infrastructure. The request is forwarded from the language infrastructure to an active component extension module. The active component extension module performs a service responsive to the request.

    Abstract translation: 用于电子系统级工具的可扩展语言基础设施的系统和方法。 根据本发明的实施例，关于类型，功能等的知识被封装在被称为活动组件扩展模块的多个智能组件中，该组件在基础设施外部。 基础架构实现了客户端和这些智能组件之间的通信机制，并且作为通用骨干网。 基础设施本身并不保持关于任何客户端，类型，功能等的任何知识。根据本发明的方法实施例，从语言基础设施的客户端接收请求。 该请求从语言基础设施转发到活动组件扩展模块。 活动组件扩展模块响应于该请求执行服务。

    Iodide stabilizer for viscosified fluid containing iron
    392.
    发明授权
    Iodide stabilizer for viscosified fluid containing iron 有权
    含铁稳定剂的碘化物稳定剂

    公开(公告)号：US08720569B2

    公开(公告)日：2014-05-13

    申请号：US13341351

    申请日：2011-12-30

    Applicant: David Michael Loveless ,  Lucas Kurtis Fontenelle ,  Rajesh Kumar Saini

    Inventor： David Michael Loveless ,  Lucas Kurtis Fontenelle ,  Rajesh Kumar Saini

    IPC: E21B43/25 ,  E21B43/26 ,  E21B43/267 ,  C09K8/60 ,  C09K8/68

    CPC classification number: C09K8/032 ,  C09K8/08 ,  C09K8/68 ,  C09K8/685

    Abstract: A composition of a treatment fluid and method for treating a zone of well. In an embodiment, the composition includes at least: (i) an aqueous phase; (ii) at least 5 ppm iron ion in the aqueous phase; (iii) a source of at least 5 ppm iodide ion to be dissolved in the aqueous phase; (iv) a water-soluble viscosity-increasing agent dissolved in the aqueous phase; and (v) a source of an oxidative breaker to be dissolved in the aqueous phase. In an embodiment, a method of treating a zone of a subterranean formation of a well includes at least the steps of: (a) forming a treatment fluid according to the composition; and (b) introducing the treatment fluid into the zone.

    Abstract translation: 处理液的组合物和处理井的方法。 在一个实施方案中，组合物至少包括：（i）水相; （ii）水相中至少5ppm的铁离子; （iii）待溶解在水相中的至少5ppm碘离子的来源; （iv）溶解在水相中的水溶性增粘剂; 和（v）要溶解在水相中的氧化破碎剂的来源。 在一个实施方案中，处理井的地层的区域的方法包括至少以下步骤：（a）根据组成形成处理流体; 和（b）将处理流体引入该区域。

    Multifunctional boronic acid crosslinking agents and associated methods
    394.
    发明授权
    Multifunctional boronic acid crosslinking agents and associated methods 有权
    多功能硼酸交联剂及相关方法

    公开(公告)号：US08708045B2

    公开(公告)日：2014-04-29

    申请号：US13229941

    申请日：2011-09-12

    Applicant: James William Ogle ,  Jeremy Holtsclaw ,  Rajesh Kumar Saini

    Inventor： James William Ogle ,  Jeremy Holtsclaw ,  Rajesh Kumar Saini

    IPC: E21B43/26 ,  E21B43/267 ,  C09K8/60 ,  C09K8/68

    CPC classification number: C09K8/12 ,  C09K8/512 ,  C09K8/685 ,  C09K8/887

    Abstract: Treatment of a subterranean formation can be conducted with viscosified treatment fluids that comprise a multifunctional boronic acid crosslinking agent. Methods for treating a subterranean formation can comprise providing a treatment fluid that comprises an aqueous base fluid, a gelling agent, and a multifunctional boronic acid crosslinking agent that comprises a copolymer comprising at least one boronic acid monomer unit and at least one water-soluble monomer unit; and introducing the treatment fluid into a subterranean formation.

    Abstract translation: 地层的处理可以用包含多官能硼酸交联剂的增稠处理流体进行。 用于处理地下地层的方法可以包括提供包含基础水溶液，胶凝剂和多官能硼酸交联剂的处理流体，所述交联剂包含至少一种硼酸单体单元和至少一种水溶性单体 单元; 并将处理流体引入地层中。

    Semiconductor device and method of manufacturing the same
    397.
    发明授权
    Semiconductor device and method of manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US08604540B2

    公开(公告)日：2013-12-10

    申请号：US12956152

    申请日：2010-11-30

    Applicant: Rajesh Kumar Malhan ,  Naohiro Sugiyama ,  Yuuichi Takeuchi

    Inventor： Rajesh Kumar Malhan ,  Naohiro Sugiyama ,  Yuuichi Takeuchi

    IPC: H01L29/66 ,  H01L21/337

    CPC classification number: H01L29/808 ,  H01L29/1608 ,  H01L29/41766 ,  H01L29/45 ,  H01L29/66068 ,  H01L29/8128

    Abstract: A wide band gap semiconductor device having a JFET, a MESFET, or a MOSFET mainly includes a semiconductor substrate, a first conductivity type semiconductor layer, and a first conductivity type channel layer. The semiconductor layer is formed on a main surface of the substrate. A recess is formed in the semiconductor layer in such a manner that the semiconductor layer is divided into a source region and a drain region. The recess has a bottom defined by the main surface of the substrate and a side wall defined by the semiconductor layer. The channel layer has an impurity concentration lower than an impurity concentration of the semiconductor layer. The channel layer is formed on the bottom and the side wall of the recess by epitaxial growth.

    Abstract translation: 具有JFET，MESFET或MOSFET的宽带隙半导体器件主要包括半导体衬底，第一导电类型半导体层和第一导电型沟道层。 半导体层形成在基板的主表面上。 在半导体层中以半导体层被分成源极区和漏极区的方式形成凹部。 凹部具有由基板的主表面和由半导体层限定的侧壁限定的底部。 沟道层的杂质浓度低于半导体层的杂质浓度。 沟槽层通过外延生长形成在凹部的底部和侧壁上。

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