Abstract:
To improve the performance of DSL modems, a DSL duplexing ratio for a new communication is selected according to the communications needs of an application. A required upstream and downstream bit rate for application communications is determined. From the ratio of these bit rates, a desired duplexing ratio is calculated. The operation of the modem is then adapted to choose a duplexing ratio that approximates the desired duplexing ratio for the application. To optimize modem operation, the size and position of the upstream and downstream bandwidths used for transmission are intelligently selected when the bit rate necessary for making the transmission is less than the total available bandwidth provided by the chosen duplexing ratio. By intelligently selecting a minimum number of subcarriers for Digital Multi-tone (DMT) signal transmission, a reduction in line driver power consumption is effectuated. Additionally, by intelligently selecting the position of the used bandwidth within the total available bandwidth, near-end crosstalk (NEXT) noise may be minimized.
Abstract:
A system and method is disclosed for venting pressure from an integrated circuit package that is sealed with a lid. During a surface mount process for mounting a ball grid array integrated circuit package to a circuit board the application of heat (1) weakens the solder that seals a soldered lid, and (2) increases vapor pressure within the integrated circuit package. This may cause the soldered lid to move out of its soldered position. The present invention solves this problem by providing an integrated circuit with a solder mask that has a plurality of solder mask vents that form a plurality of vapor pressure vents through the solder. The vapor pressure vents prevent the occurrence of any increase in vapor pressure that would shift the soldered lid out of its soldered position. An alternate embodiment vents pressure through an epoxy layer that is used to attach a lid by epoxy.
Abstract:
An extent record for an extent based data buffer that includes a host pointer that links the extent record to a next host extent record of a host extent record set, and a storage device pointer that links the extent record to a next storage device extent record of a storage device extent record set. Also, a system for transferring data between a host and a storage device that includes a data buffer coupled to the host and the storage device, where memory in the data buffer is divided into one or more extents, an extent table associated with the data buffer, where the extent table includes at least one extent record, an LBA chain table coupled to the host and the extent table, and a track section table coupled to the storage device and the extent table.
Abstract:
A semiconductor structure comprises a silicon substrate of a first conductivity type including wells of a second conductivity type formed on a surface thereof. The wells may be laterally isolated by shallow trench isolation. Transistors are formed in the wells by first forming several chemically distinct layers. Anisotropic etching then forms openings in a top one of the layers. A blanket dielectric layer is formed in the openings and on the layers. Anisotropic etching removes portions of the blanket dielectric layer from planar surfaces of the substrate but not from sidewalls of the openings to form dielectric spacers separated by gaps within the openings. Gate oxides are formed by oxidation of exposed areas of the substrate. Ion implantation forms channels beneath the gate oxides. Polysilicon deposition followed by chemical-mechanical polishing defines gates in the gaps. The chemically distinct layers are then stripped without removing the dielectric spacers. Conventional fabrication operations define other structures to complete fabrication of an integrated circuit.
Abstract:
A data processor includes execution clusters, an instruction cache, an instruction issue unit, and alignment and dispersal circuitry. Each execution cluster includes an instruction execution pipeline having a number of processing stages, and each execution pipeline is a number of lanes wide. The processing stages execute instruction bundles, where each instruction bundle has one or more syllables. Each lane is capable of receiving one of the syllables of an instruction bundle. The instruction cache includes a number of cache lines. The instruction issue unit receives fetched cache lines and issues complete instruction bundles toward the execution clusters. The alignment and dispersal circuitry receives the complete instruction bundles from the instruction issue unit and routes each received complete instruction bundle to a correct one of the execution clusters. The complete instruction bundles are routed as a function of at least one address bit associated with each complete instruction bundle.
Abstract:
A high power density transistor structure includes a transistor package capable of housing a high power density transistor. The transistor package has a package insulator and a plurality of transistor leads. Each of the transistor leads has a far end, a near end and a lead periphery. The high power density transistor structure also includes a solder lock located on at least one of the transistor leads. At least a portion of the solder lock is attachable to a printed circuit board (PCB). At least a portion of the lead periphery of each transistor lead is attachable to at least one of: the PCB and the package insulator.
Abstract:
Counter-clockwise and clockwise quadrant transitions are detected and accumulated with respect to a received complex signal over a certain time period. These transitions may then be compared in order to obtain information indicative of both a magnitude and phase of a frequency offset error. Additionally, zero-crossings of the received complex signal over the same certain time period are detected and accumulated. The accumulated crossings provide information indicative of frequency offset magnitude. The determined magnitude and phase of the frequency offset error may then be used to adjust a local oscillator frequency to provide for improved receiver performance.
Abstract:
To optimize the performance of DSL modems in the same cable bundle, the size and position of the bandwidth used for transmission is intelligently selected when the bit rate necessary for making the transmission is less than the total available bandwidth. By intelligently selecting a minimum number of subcarriers for Digital Multi-tone (DMT) signal transmission, a reduction in line driver power consumption is effectuated. Additionally, by intelligently selecting the position of the used bandwidth within the total available bandwidth, near-end crosstalk (NEXT) noise within the cable bundle may be minimized.
Abstract:
A plurality of grids of LED segments form an LED array. Each grid includes a plurality of LED segments connected in a common cathode configuration at a common cathode node. A high side driver is connected to all of the plurality of grids. This high side driver is operable responsive to segment control signals to selectively supply current to certain LED segments. One low side driver is provided for each of the plurality of grids. Each low side driver is responsive to a grid control signal to make a grid selection and sink current from the common cathode node of its corresponding selected grid of LED segments. A plurality of selectively actuated current sink paths are provided in each low side driver. A control logic circuit actuates a current sink path within the low side driver for each LED segment that is selectively supplied current by the high side driver. A substantially constant low side voltage drop through these sink paths is provided regardless of the number of LED segments that are supplied current by the high side driver so as to achieve a substantially constant LED segment brightness. A common anode configuration operating in an analogous way is also disclosed.
Abstract:
An integrated circuit (IC) device comprising: 1) an integrated circuit (IC) die having a first surface, a second surface opposite the first surface, and sidewalls extending between the first surface and the second surface; 2) an integrated circuit (IC) package for supporting the IC die, wherein the IC package is attached to at least one of the sidewalls of the IC die such that at least a portion of the IC die first surface and at least a portion of the IC die second surface are exposed; and 3) at least one auxiliary component attached to at least one of the exposed portion of the IC die first surface and the exposed portion of the IC die second surface.