公开(公告)号：US20080219547A1

公开(公告)日：2008-09-11

申请号：US12041127

申请日：2008-03-03

Applicant: Jong-An Kim ,  Yu-Sin Yang ,  Chung-Sam Jun ,  Moon-Shik Kang ,  Ji-Hye Kim

Inventor： Jong-An Kim ,  Yu-Sin Yang ,  Chung-Sam Jun ,  Moon-Shik Kang ,  Ji-Hye Kim

IPC: G06K9/00

CPC classification number: G06T7/001 ,  G01N21/95607 ,  G06T2207/10061 ,  G06T2207/30148

Abstract: In a method of analyzing a wafer sample, a first defect of a photoresist pattern on the wafer sample having shot regions exposed with related exposure conditions is detected. A first portion of the pattern includes the shot regions exposed with an exposure condition corresponding to a reference exposure condition and a tolerance error range of the reference exposure condition. The first defect repeatedly existing in at least two of the shot regions in a second portion of the pattern is set up as a second defect of the pattern. A first reference image displaying the second defect is obtained. The first defect of the shot regions in the first portion corresponding to the second defect is set up as a third defect corresponding to weak points of the pattern. The exposure conditions of the shot region having no weak points are set up as an exposure margin of an exposure process.

Abstract translation: 在分析晶片样品的方法中，检测具有用相关曝光条件曝光的拍摄区域的晶片样品上的光致抗蚀剂图案的第一缺陷。 图案的第一部分包括用与参考曝光条件相对应的曝光条件和参考曝光条件的公差误差范围暴露的照射区域。 在图案的第二部分中的至少两个拍摄区域中重复存在的第一缺陷被设置为图案的第二缺陷。 获得显示第二缺陷的第一参考图像。 对应于第二缺陷的第一部分中的拍摄区域的第一缺陷被设置为对应于图案的弱点的第三缺陷。 没有弱点的照射区域的曝光条件被设置为曝光处理的曝光余量。

公开(公告)号：US20080112608A1

公开(公告)日：2008-05-15

申请号：US11979776

申请日：2007-11-08

Applicant: Yu-Sin Yang ,  Chung-Sam Jun ,  Jong-An Kim ,  Moon-Shik Kang ,  Ji-Hye Kim

Inventor： Yu-Sin Yang ,  Chung-Sam Jun ,  Jong-An Kim ,  Moon-Shik Kang ,  Ji-Hye Kim

IPC: G06K9/00

CPC classification number: G06T7/001 ,  G06T2207/10056 ,  G06T2207/20056 ,  G06T2207/30148

Abstract: In a method of detecting defects in patterns and an apparatus for performing the method, a first image of a detection region on a semiconductor substrate may be acquired. A second image may be acquired from the first image by performing a Fourier transform and performing a low pass filtering. The second image may be compared with a reference image so that the defects of the detection region are detected. Existence of the defect of the second image is determined using a relation value between a grey level of each of pixels of the second image and the reference image, respectively. When a defect exists, the horizontal and the vertical positions of the pixel where the relation value is minimum are combined to determine the position of the defect.

Abstract translation: 在检测图案中的缺陷的方法和执行该方法的装置中，可以获取半导体衬底上的检测区域的第一图像。 可以通过执行傅里叶变换并执行低通滤波从第一图像获取第二图像。 可以将第二图像与参考图像进行比较，从而检测出检测区域的缺陷。 使用第二图像的每个像素的灰度级与参考图像之间的关系值来确定第二图像的缺陷的存在。 当存在缺陷时，组合关系值最小的像素的水平和垂直位置以确定缺陷的位置。

公开(公告)号：US07355729B2

公开(公告)日：2008-04-08

申请号：US10912559

申请日：2004-08-06

Applicant: Hwan-Shik Park ,  Sun-Yong Choi ,  Chung-Sam Jun ,  Kye-Weon Kim

Inventor： Hwan-Shik Park ,  Sun-Yong Choi ,  Chung-Sam Jun ,  Kye-Weon Kim

IPC: G01B11/28

CPC classification number: G01B11/06

Abstract: An apparatus and method of measuring the thickness of a substrate. A first light is reflected from a standard sample having a known thickness. The light is concentrated through the light-focusing lens. The first light is converted into a first electrical signal by a detector responding to a light intensity of the concentrated first light. A second light is reflected from a substrate, and then is concentrated through the light-focusing lens. The second light is converted into a second electrical signal by the detector responding to a light intensity of the concentrated second light. An operating unit determines first and second peak values from the first and second electrical signals, respectively. The operating unit calculates the thickness of the substrate by using a standard distance corresponding to the first peak value, a moving distance of the substrate corresponding to the second peak value, and the known thickness of the standard sample.

Abstract translation: 一种测量衬底厚度的装置和方法。 第一光从具有已知厚度的标准样品反射。 光通过光聚焦透镜集中。 通过响应于集中的第一光的光强度的检测器将第一光转换成第一电信号。 第二个光从衬底反射，然后通过光聚焦透镜进行浓缩。 通过检测器响应于集中的第二光的光强度将第二光转换成第二电信号。 操作单元分别从第一和第二电信号确定第一和第二峰值。 操作单元通过使用与第一峰值相对应的标准距离，对应于第二峰值的基板的移动距离和标准样品的已知厚度来计算基板的厚度。

公开(公告)号：US20070002317A1

公开(公告)日：2007-01-04

申请号：US11476651

申请日：2006-06-29

Applicant: Yu-Sin Yang ,  Chung-Sam Jun ,  Ki-Suk Chung ,  Tae-Sung Kim ,  Byung-Sug Lee

Inventor： Yu-Sin Yang ,  Chung-Sam Jun ,  Ki-Suk Chung ,  Tae-Sung Kim ,  Byung-Sug Lee

IPC: G01N21/88

CPC classification number: G01N21/9501 ,  G01N21/4738

Abstract: In a method of inspecting an object, a first light is irradiated onto a bare object and a first reflection signal is reflected from the bare object. A second light is irradiated onto a processed object and a second reflection signal is reflected from the processed object. The first and second reflection signals are differentiated, to thereby generate respective first and second differential signals. A defect on the processed object is detected by a comparison between the first and second differential signals. The first and second differential signals overlap with each other and at least one signal-deviation portion is detected. The first and second differential signals are spaced apart out of an allowable error range in the signal-deviation portion. The defect is detected from a portion of the processed object corresponding to the signal-deviation portion.

Abstract translation: 在检查物体的方法中，将第一光照射到裸物体上，并且从裸物体反射第一反射信号。 将第二光照射到经处理的物体上，并且第二反射信号从被处理物体反射。 第一和第二反射信号被微分，从而产生相应的第一和第二差分信号。 通过第一和第二差分信号之间的比较来检测被处理对象的缺陷。 第一和第二差分信号彼此重叠并且检测至少一个信号偏离部分。 第一和第二差分信号在信号偏差部分的允许误差范围之外是间隔开的。 从对应于信号偏离部分的处理对象的一部分检测缺陷。

公开(公告)号：US07113274B2

公开(公告)日：2006-09-26

申请号：US10777922

申请日：2004-02-11

Applicant: Yu-Sin Yang ,  Sang-Mun Chon ,  Sun-Yong Choi ,  Chung-Sam Jun

Inventor： Yu-Sin Yang ,  Sang-Mun Chon ,  Sun-Yong Choi ,  Chung-Sam Jun

IPC: G01N21/00

CPC classification number: G01N21/4738 ,  G01N21/94 ,  G01N21/9501 ,  G01N21/956

Abstract: In a method and an apparatus for inspecting defects on a substrate using a light beam, a light source irradiates light beams having different wavelengths onto the substrate. A detector detects first lights scattered from a surface of the substrate and second lights scattered from impurities on the substrate by irradiation of the light beams. An operation unit compares first intensities of the first lights with second intensities of the second lights in order to produce differential values therebetween, and selects a wavelength corresponding to a maximum value of the differential values. An inspection process for inspecting the defects on the substrate is performed using a light beam having the selected wavelength.

Abstract translation: 在使用光束检查基板上的缺陷的方法和装置中，光源将具有不同波长的光束照射到基板上。 检测器通过照射光束来检测从基板的表面散射的第一光和从基板上的杂质散射的第二光。 操作单元将第一光的第一强度与第二光的第二强度进行比较，以便在其间产生微分值，并选择与差分值的最大值对应的波长。 使用具有所选择的波长的光进行用于检查基板上的缺陷的检查处理。

公开(公告)号：US20060052979A1

公开(公告)日：2006-03-09

申请号：US11191069

申请日：2005-07-28

Applicant: Jang-Ik Park ,  Chung-Sam Jun ,  Hwan-Shik Park

Inventor： Jang-Ik Park ,  Chung-Sam Jun ,  Hwan-Shik Park

IPC: G01B11/02 ,  G01B13/02

CPC classification number: G01B11/0666

Abstract: Disclosed are a method and apparatus for measuring a thickness of a metal layer formed on a semiconductor substrate. First, second, and third light pulses are successively irradiated onto a top surface of the metal layer to generate respective first, second, and third second sonic waves in the metal layer. Interference between the first and second sonic waves alters a detected reflectivity of the third light pulse off the metal layer. Maximum interference of the sonic waves occurs where the first sonic wave travels to a bottom surface of the metal layer and back to the top surface in the same time that it takes for the second light pulse to arrive at the surface of the metal layer. Accordingly, the velocity of the first sonic wave and a time lag between the first and second light pulses are used to determine the thickness of the metal layer.

Abstract translation: 公开了一种用于测量形成在半导体衬底上的金属层的厚度的方法和装置。 第一，第二和第三光脉冲依次照射到金属层的顶表面上，以在金属层中产生相应的第一，第二和第三声波。 第一和第二声波之间的干扰改变了第三光脉冲从金属层的检测反射率。 发生声波的最大干扰，其中第一声波在第二光脉冲到达金属层的表面所需的同一时间内移动到金属层的底表面并返回到顶表面。 因此，使用第一声波的速度和第一和第二光脉冲之间的时间滞后来确定金属层的厚度。

公开(公告)号：US06800863B2

公开(公告)日：2004-10-05

申请号：US10634756

申请日：2003-08-06

Applicant: Chung-Sam Jun ,  Sun-Yong Choi ,  Dong-Chun Lee ,  Tae-kyoung Kim ,  Doo-Guen Song ,  Seung-Won Chae

Inventor： Chung-Sam Jun ,  Sun-Yong Choi ,  Dong-Chun Lee ,  Tae-kyoung Kim ,  Doo-Guen Song ,  Seung-Won Chae

IPC: H01J37317

CPC classification number: H01J37/3045 ,  H01J37/3171

Abstract: A method for monitoring an ion implanter includes positioning a substrate behind an interceptor for intercepting a portion of an ion beam to be irradiated toward the substrate, irradiating a first ion beam toward the substrate to form a first shadow on the substrate, rotating the substrate about a central axis of the substrate, irradiating a second ion beam toward the substrate to form a second shadow on the substrate, and measuring a dosage of ions implanted into the substrate to monitor whether the rotation of the substrate has been normally performed. Preferably, a dosage of ions implanted into the substrate is calculated from a thermal wave value of the substrate and whether the rotation of the substrate has been normally performed is monitored by comparing the thermal wave value corresponding to the first shadow with a reference thermal wave value.

Abstract translation: 一种用于监测离子注入机的方法包括将基片定位在拦截器后面，用于截取要朝向基板照射的离子束的一部分，向基板照射第一离子束，以在基板上形成第一阴影， 基板的中心轴，向基板照射第二离子束，在基板上形成第二阴影，并测量注入到基板中的离子的剂量，以监测基板的旋转是否正常进行。 优选地，通过将​​对应于第一阴影的热波值与参考热波值进行比较来监测从衬底的热波值和衬底的旋转是否正常地进行的植入衬底中的离子的剂量 。

公开(公告)号：US06544802B1

公开(公告)日：2003-04-08

申请号：US09685094

申请日：2000-10-11

Applicant: Chung-sam Jun ,  Pil-sik Hyun

Inventor： Chung-sam Jun ,  Pil-sik Hyun

IPC: H01L2100

CPC classification number: H01L21/67288 ,  G01R31/311

Abstract: Wafer inspection system and method which are suitable for inspection of highly integrated semiconductor devices. The wafer inspection system includes an apparatus for selectively inspecting conductive pattern defects, which includes a sensor for scanning the surface of a wafer in a noncontact manner and an RLC circuit which is connected to the sensor and converts a signal obtained from the sensor into an electrical characteristic; and an image processing computer which is connected to the apparatus for selectively inspecting conductive pattern defects. Only conductive defects are selectively extracted, thereby increasing inspection efficiency.

Abstract translation: 适用于高度集成半导体器件检查的晶圆检查系统和方法。 晶片检查系统包括用于选择性地检查导电图案缺陷的装置，其包括用于以非接触方式扫描晶片表面的传感器和连接到传感器的RLC电路，并将从传感器获得的信号转换为电 特性; 以及图像处理计算机，其连接到用于选择性地检查导电图案缺陷的装置。 仅选择性地提取导电缺陷，从而提高检查效率。

公开(公告)号：US06366688B1

公开(公告)日：2002-04-02

申请号：US09162267

申请日：1998-09-29

Applicant: Chung-sam Jun ,  Jeong-kon Kim ,  Sang-moon Chon ,  Sang-bong Choi

Inventor： Chung-sam Jun ,  Jeong-kon Kim ,  Sang-moon Chon ,  Sang-bong Choi

IPC: G06K900

CPC classification number: G01R31/2886 ,  H01J2237/2817

Abstract: There is provided a contact failure inspection system and method for semiconductor devices and a method of manufacturing semiconductor devices. Using digitized values for electron signals detected using a scanning electron microscope, contacts can be inspected to identify failures such as non-open contact holes. The contact failure inspection is performed by comparing the electron signal value detected from a unit area including at least one contact hole with values representative of the electron signal corresponding to a normal contact.

Abstract translation: 提供了一种用于半导体器件的接触故障检测系统和方法以及半导体器件的制造方法。 使用扫描电子显微镜检测的电子信号的数字化值可以被检查以识别诸如非开放接触孔的故障。 通过将从包括至少一个接触孔的单位区域检测到的电子信号值与表示与正常接触相对应的电子信号的值进行比较来进行接触故障检查。

公开(公告)号：US08551791B2

公开(公告)日：2013-10-08

申请号：US12457873

申请日：2009-06-24

Applicant: Jang-Ik Park ,  Chung-Sam Jun ,  Hwan-Shik Park ,  Ji-Hye Kim ,  Kwan-Woo Ryu ,  Kong-Jung Sa ,  So-Yeon Yun

Inventor： Jang-Ik Park ,  Chung-Sam Jun ,  Hwan-Shik Park ,  Ji-Hye Kim ,  Kwan-Woo Ryu ,  Kong-Jung Sa ,  So-Yeon Yun

IPC: H01L21/00 ,  G06K9/00 ,  G01N21/00

CPC classification number: G01N21/3563 ,  G01J3/447 ,  G01J4/00 ,  G01N21/9501 ,  H01L22/12

Abstract: Apparatus and method for manufacturing a semiconductor device through a layer material dimension analysis increase productivity. The method includes performing a semiconductor manufacturing process of at least one reference substrate and at least one target substrate in a semiconductor process device, detecting a reference spectrum and a reference profile for the reference substrate, determining a relation function between the detected reference spectrum and reference profile, detecting a real-time spectrum of the target substrate, and determining in real time a real-time profile of the target substrate processed in the semiconductor process device by using the detected real-time spectrum as a variable in the determined relation function.