公开(公告)号：US20160300941A1

公开(公告)日：2016-10-13

申请号：US15190690

申请日：2016-06-23

申请人： ENKRIS SEMICONDUCTOR, INC.

发明人： Kai CHENG

IPC分类号： H01L29/778 ,  H01L29/66 ,  H01L29/06 ,  H01L29/20 ,  H01L29/205

CPC分类号： H01L29/7787 ,  H01L29/0657 ,  H01L29/0692 ,  H01L29/1037 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/4236 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/7789

摘要： A method of manufacturing an enhanced device and an enhance device are provided. The method comprises: preparing a substrate, and forming a non-planar structure in the substrate; depositing a nitride channel layer on the substrate, a gate region, a source region and a drain region being defined on the nitride channel layer, the gate region of the nitride channel layer having a non-planar structure transferred from the non-planar structure of the substrate; depositing a nitride barrier layer on the nitride channel layer, the nitride barrier layer having a non-planar structure located above and corresponding to the non-planar structure of the nitride channel layer, the nitride barrier layer and the nitride channel layer forming a nitride channel layer/nitride barrier layer heterojunction.

摘要翻译： 提供一种制造增强型装置和增强装置的方法。 该方法包括：准备衬底，并在衬底中形成非平面结构; 在所述衬底上沉积氮化物沟道层，在所述氮化物沟道层上限定栅极区域，源极区域和漏极区域，所述氮化物沟道层的栅极区域具有从所述氮化物沟道层的非平面结构转移的非平面结构 基材; 在所述氮化物沟道层上沉积氮化物阻挡层，所述氮化物阻挡层具有位于所述氮化物沟道层的非平面结构之上并对应于所述氮化物沟道层的非平面结构的非平面结构，所述氮化物阻挡层和所述氮化物沟道层形成氮化物沟道 层/氮化物阻挡层异质结。

公开(公告)号：US12107187B2

公开(公告)日：2024-10-01

申请号：US17632209

申请日：2019-12-05

申请人： ENKRIS SEMICONDUCTOR, INC.

发明人： Kai Cheng

IPC分类号： H01L33/32 ,  H01L33/00 ,  H01L33/38

CPC分类号： H01L33/32 ,  H01L33/0075 ,  H01L33/382 ,  H01L2933/0016

摘要： The present disclosure provides a semiconductor structure and a manufacturing method thereof. In the manufacturing method, a P-type semiconductor layer is provided, where the P-type semiconductor layer includes a GaN-based material and an upper surface of the P-type semiconductor layer is a Ga surface. A first N-type semiconductor layer is formed on the P-type semiconductor layer, where the first N-type semiconductor layer comprises a GaN-based material. An upper surface of the first N-type semiconductor layer is an N surface. A part of the first N-type semiconductor layer is removed by wet etching to expose a part of the P-type semiconductor layer.

公开(公告)号：US20240304675A1

公开(公告)日：2024-09-12

申请号：US18595013

申请日：2024-03-04

申请人： ENKRIS SEMICONDUCTOR, INC.

发明人： Kai CHENG

IPC分类号： H01L29/20 ,  H01L21/02 ,  H01L21/265

CPC分类号： H01L29/2003 ,  H01L21/02389 ,  H01L21/2654

摘要： Disclosed are a composite substrate, a semiconductor structure, and a manufacturing method for a composite substrate. The composite substrate includes single-crystal AlN; a support substrate disposed below a bottom of the single-crystal AlN; and a transition layer disposed between the single-crystal AlN and the support substrate, where the transition layer includes an oxygen element. In the composite substrate provided by the present disclosure, mechanical strength of the single-crystal AlN may be indirectly improved through a supporting effect performed on the single-crystal AlN by the support substrate located below the bottom of the single-crystal AlN. Meanwhile, the support substrate also plays a role in regulating the stress on the single-crystal AlN, thereby reducing a warping degree of the single-crystal AlN during the subsequent epitaxial process and avoiding the occurrence of cracks or fragments.

公开(公告)号：US20240297069A1

公开(公告)日：2024-09-05

申请号：US18328143

申请日：2023-06-02

申请人： ENKRIS SEMICONDUCTOR, INC.

发明人： Kai CHENG

IPC分类号： H01L21/762 ,  C23C14/06 ,  C23C14/48 ,  C23C16/34 ,  C30B23/02 ,  C30B25/02 ,  C30B29/40 ,  C30B31/22 ,  H01L21/02 ,  H01L29/26

CPC分类号： H01L21/76251 ,  C23C14/0641 ,  C23C14/48 ,  C23C16/34 ,  C30B23/02 ,  C30B25/02 ,  C30B29/403 ,  C30B31/22 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/02351 ,  H01L21/02356 ,  H01L29/26

摘要： A composite substrate includes a substrate, a high-resistance layer located on the substrate, the high-resistance layer comprising a first low-temperature aluminum nitride (AlN) layer, a high-temperature AlN layer and a second low-temperature AlN layer which are stacked in sequence, and a growth substrate located on a side, away from the substrate, of the high-resistance layer. Under the action of the first low-temperature AlN layer, a tensile stress on the high-temperature AlN layer may be reduced, to reduce a dislocation, and further improve a crystal quality of the high-temperature AlN layer and ensure resistivity of the high-temperature AlN layer, and an element of Al in the high-temperature AlN layer is prevented from diffusing into the growth substrate, to protect the crystal quality of the high-temperature AlN layer and improve a bonding effect between the high-resistance layer and the growth substrate. Thus, stability and reliability of the composite substrate are greatly improved.

公开(公告)号：US20240258359A1

公开(公告)日：2024-08-01

申请号：US18560919

申请日：2021-06-18

申请人： ENKRIS SEMICONDUCTOR, INC.

发明人： Yuchao CHEN ,  Kai CHENG

IPC分类号： H01L27/146

CPC分类号： H01L27/14645 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14636

摘要： The present disclosure provides a frontside-illuminated image sensor, including: a base, a photosensitive unit, a color filter unit and a lens structure. The base has charge storage regions. The photosensitive unit is on the base, the photosensitive unit includes photosensitive layers for different colors, and one of the photosensitive layers is electrically connected to one of the charge storage regions. The color filter unit is at a side of the photosensitive unit away from the base, the color filter unit includes color filter layers for different colors, and one of the color filter layers corresponds to one of the photosensitive layers. The lens structure is at a side of the color filter unit away from the base.

公开(公告)号：US20240222489A1

公开(公告)日：2024-07-04

申请号：US18491600

申请日：2023-10-20

申请人： ENKRIS SEMICONDUCTOR, INC.

发明人： Kai Cheng

IPC分类号： H01L29/778 ,  H01L21/265 ,  H01L21/266 ,  H01L29/20 ,  H01L29/66

CPC分类号： H01L29/7786 ,  H01L21/2654 ,  H01L21/266 ,  H01L29/2003 ,  H01L29/66462

摘要： The present disclosure provides a semiconductor structure, including a substrate, a channel layer, a barrier layer, and a P-type semiconductor layer that are distributed from bottom to top, where the barrier layer includes an Al element, and a variation curve of a proportion of Al element in the barrier layer is continuous; where at an interface between the channel layer and the barrier layer, the proportion of Al element in the barrier layer is the same as the proportion of Al element in the channel layer; and at an interface between the barrier layer and the P-type semiconductor layer, the proportion of Al element in the barrier layer is the same as the proportion of Al element in the P-type semiconductor layer.

公开(公告)号：US20240213296A1

公开(公告)日：2024-06-27

申请号：US18450296

申请日：2023-08-15

申请人： ENKRIS SEMICONDUCTOR, INC.

发明人： Kai Cheng

IPC分类号： H01L27/15 ,  H01L33/00 ,  H01L33/24 ,  H01L33/50

CPC分类号： H01L27/156 ,  H01L33/005 ,  H01L33/24 ,  H01L33/502

摘要： A semiconductor structure and a manufacturing method thereof are provided. The method includes: providing a patterned substrate, where the patterned substrate includes columnar structures; providing second inhibition layers, where the second inhibition layers are respectively located between two adjacent columnar structures of the columnar structures, and upper surfaces of the columnar structures are exposed; providing a light-emitting structure layer on the upper surface of each of the columnar structures; and removing the patterned substrate, to obtain holes at regions corresponding to the columnar structures, where the holes are respectively located between two adjacent second inhibition layers of the second inhibition layers, and the holes correspond to the light-emitting structure layers respectively. The manufacturing method provided by the present disclosure optimizes the manufacturing process and realizes full-color LED.

公开(公告)号：US20240178282A1

公开(公告)日：2024-05-30

申请号：US18323343

申请日：2023-05-24

申请人： ENKRIS SEMICONDUCTOR, INC.

发明人： Kai CHENG

IPC分类号： H01L29/20 ,  H01L29/06 ,  H01L29/66 ,  H01L29/778

CPC分类号： H01L29/2003 ,  H01L29/0607 ,  H01L29/66462 ,  H01L29/7786

摘要： Disclosed are a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a substrate, a channel layer, a barrier layer and a P-type semiconductor layer sequentially stacked in a first direction. The P-type semiconductor layer includes a high-resistance passivation region and an activation region, and the high-resistance passivation region is located on a side, away from the substrate, of the activation region. When a semiconductor device is in an off state, the activation region of the P-type semiconductor layer may deplete 2DEG at the channel to realize an enhancement-mode device. The high-resistance passivation region is passivated to form a high-resistance structure, which may reduce a gate leakage current in the off state and improve power characteristics of the semiconductor device.

公开(公告)号：US20240170607A1

公开(公告)日：2024-05-23

申请号：US18357433

申请日：2023-07-24

申请人： ENKRIS SEMICONDUCTOR, INC.

发明人： Weihua LIU ,  Liangfang SUN

IPC分类号： H01L33/06 ,  H01L33/26

CPC分类号： H01L33/06 ,  H01L33/26

摘要： A semiconductor structure includes: a first semiconductor layer, a multiple quantum well layers formed on the first semiconductor layer, where the multiple quantum well layer includes a plurality of quantum barrier layers and a plurality of quantum well layers alternately arranged; an insertion layer formed on each of the plurality of quantum well layers; and a second semiconductor layer formed on the multiple quantum well layer; where a material of the insertion layer is a nitride containing a scandium component. In this application, the insertion layer, made of the nitride containing the scandium component, may repair deterioration problem of epitaxial quantum well materials. Moreover, a compressive stress on the quantum well layer located below is introduced, to achieve longer light-emitting wavelengths by using InGaN quantum well materials with a lower content of In component.

公开(公告)号：US20240079520A1

公开(公告)日：2024-03-07

申请号：US18459874

申请日：2023-09-01

申请人： ENKRIS SEMICONDUCTOR, INC.

发明人： Liyang ZHANG ,  Kai CHENG

IPC分类号： H01L33/12 ,  H01L33/00 ,  H01L33/22 ,  H01L33/32

CPC分类号： H01L33/12 ,  H01L33/0075 ,  H01L33/22 ,  H01L33/32

摘要： A light emitting device includes: a first substrate; a light emitting structure layer located on the first substrate; and an insertion layer located on the light emitting structure layer, a surface, away from the light emitting structure layer, of the insertion layer is a roughened surface, and the insertion layer has a protective effect on the light emitting structure layer. In the light emitting device provided by the present disclosure, the surface, away from the light emitting structure layer, of the insertion layer is the roughened surface, and the insertion layer has the protective effect on the light emitting structure layer during a peeling off process, which solves problems of reduced yield and reduced light extraction efficiency of a light emitting device.