公开(公告)号：US20100051934A1

公开(公告)日：2010-03-04

申请号：US12504483

申请日：2009-07-16

申请人： Jong-Hyun Choung ,  Bong-Kyun Kim ,  Byeong-Jin Lee ,  Sun-Young Hong ,  Pil-Sang Yun ,  Hong-Sick Park ,  Dong-Ju Yang ,  Young-Joo Choi ,  Nam-Seok Suh

发明人： Jong-Hyun Choung ,  Bong-Kyun Kim ,  Byeong-Jin Lee ,  Sun-Young Hong ,  Pil-Sang Yun ,  Hong-Sick Park ,  Dong-Ju Yang ,  Young-Joo Choi ,  Nam-Seok Suh

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1288

摘要： A thin film transistor array panel and a method of manufacturing the same are provided according to one or more embodiments. In an embodiment, a method includes: forming a gate line on an insulation substrate; stacking a gate insulating layer, an oxide semiconductor layer, a first barrier layer, and a first copper layer on the gate line; performing a photolithography process on the oxide semiconductor layer, the first barrier layer, and the first copper layer and forming a data line including a source electrode, a drain electrode, and an oxide semiconductor pattern; forming a passivation layer having the contact hole that exposes the drain electrode on the data line and the drain electrode; and forming a pixel electrode that is connected to the drain electrode through the contact hole on the passivation layer, wherein the forming of a data line, a drain electrode, and an oxide semiconductor pattern includes wet etching the first copper layer and then wet etching the first barrier layer and the oxide semiconductor layer.

摘要翻译： 根据一个或多个实施例提供薄膜晶体管阵列面板及其制造方法。 在一个实施例中，一种方法包括：在绝缘基板上形成栅极线; 在栅极线上堆叠栅极绝缘层，氧化物半导体层，第一势垒层和第一铜层; 在所述氧化物半导体层，所述第一阻挡层和所述第一铜层上进行光刻工艺，并形成包括源电极，漏电极和氧化物半导体图案的数据线; 形成具有使数据线和漏电极上的漏电极露出的接触孔的钝化层; 以及形成通过钝化层上的接触孔连接到漏电极的像素电极，其中数据线，漏电极和氧化物半导体图案的形成包括湿蚀刻第一铜层，然后湿蚀刻 第一阻挡层和氧化物半导体层。

公开(公告)号：US07658803B2

公开(公告)日：2010-02-09

申请号：US11636008

申请日：2006-12-06

申请人： Hong-Sick Park

发明人： Hong-Sick Park

IPC分类号： G03F7/42

CPC分类号： C11D11/0047 ,  C11D7/263 ,  C11D7/3281

摘要： A manufacturing a thin film transistor array panel includes depositing a first thin film including aluminum on a substrate, patterning the first thin film by photolithography and etching, cleansing the substrate including the first thin film, and depositing a second thin film on the cleansed substrate. The cleansing is performed using a cleansing material including ultrapure water, cyclic amine, pyrogallol, benzotrizole, and methyl glycol. The cleansing material includes ultrapure water at about 85 wt % to about 99 wt %, cyclic amine at about 0.01 wt % to about 1.0 wt %, pyrogallol at about 0.01 wt % to 1.0 wt %, benzotrizole at about 0.01 wt % to 1.0 wt %, and methyl glycol at about 0.01 wt % to 1.0 wt %.

摘要翻译： 制造薄膜晶体管阵列面板包括在基板上沉积包括铝的第一薄膜，通过光刻和蚀刻对第一薄膜进行图案化，清洗包括第一薄膜的基板，以及在清洁的基板上沉积第二薄膜。 使用包括超纯水，环胺，连苯三酚，苯并三唑和甲基二醇的清洁材料进行清洁。 清洁材料包括约85重量％至约99重量％的超纯水，约0.01重量％至约1.0重量％的环胺，约0.01重量％至1.0重量％的连苯三酚，约0.01重量％至1.0重量％的苯并三唑 ％和约0.01重量％至1.0重量％的甲基二醇。

公开(公告)号：US07605091B2

公开(公告)日：2009-10-20

申请号：US11263999

申请日：2005-11-02

申请人： Hong-Sick Park ,  Sung-Ho Kang ,  Hong-Je Cho

发明人： Hong-Sick Park ,  Sung-Ho Kang ,  Hong-Je Cho

IPC分类号： H01L21/461

CPC分类号： H01L21/32134 ,  C23F1/20 ,  C23F1/26 ,  C23F1/44 ,  H01L27/12 ,  H01L27/124 ,  H01L29/458 ,  H01L29/4908

摘要： The present invention provides a method for manufacturing a thin film transistor (TFT) array panel by forming a gate line having a gate electrode on an insulating substrate; sequentially depositing a gate insulating layer and a semiconductor layer on the gate line; forming a drain electrode and a data line having a source electrode on the gate insulating and semiconductor layers; and forming a pixel electrode connected to the drain electrode. These elements can be formed by photo-etching using an etchant containing 65 wt % to 75 wt % of phosphoric acid, 0.5 wt % to 15 wt % of nitric acid, 2 wt % to 15 wt % of acetic acid, 0.1 wt % to 8.0 wt % of a potassium compound, and deionized water. Each element of the TFT array panel can be patterned with the etchant of the invention under similar conditions, which simplifies a manufacturing process and saves costs and results in TFT elements having a good profile.

摘要翻译： 本发明提供一种通过在绝缘基板上形成具有栅电极的栅极线来制造薄膜晶体管（TFT）阵列板的方法; 在栅极线上依次沉积栅极绝缘层和半导体层; 在所述栅绝缘层和半导体层上形成漏电极和具有源电极的数据线; 以及形成连接到所述漏电极的像素电极。 这些元素可以通过使用含有65重量％至75重量％的磷酸，0.5重量％至15重量％的硝酸，2重量％至15重量％的乙酸，0.1重量％至0.1重量％的蚀刻剂 8.0重量％的钾化合物和去离子水。 在类似的条件下，TFT阵列面板的每个元件可以用本发明的蚀刻剂进行图案化，这简化了制造工艺，并且节省了具有良好外形的TFT元件的成本和结果。

公开(公告)号：US20090184319A1

公开(公告)日：2009-07-23

申请号：US12328487

申请日：2008-12-04

申请人： Sang-Gab Kim ,  Min-Seok Oh ,  Yu-Gwang Jeong ,  Hong-Sick Park ,  Shi-Yul Kim ,  Jang-Soo Kim ,  Shin-Il Choi

发明人： Sang-Gab Kim ,  Min-Seok Oh ,  Yu-Gwang Jeong ,  Hong-Sick Park ,  Shi-Yul Kim ,  Jang-Soo Kim ,  Shin-Il Choi

IPC分类号： H01L29/04 ,  H01L21/336

CPC分类号： G02F1/136286 ,  G02F2001/136295 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/458

摘要： A method of manufacturing a display substrate is described. In the method, a gate line and a gate electrode are formed on a base substrate. A source metal layer is formed on the base substrate having the gate line and the gate electrode. A data line, a source electrode and a drain electrode are formed by etching the source metal layer by using an etching gas. An additive gas is provided to the base substrate having the drain electrode so that the additive gas reacts with an etching component of the etching gas to remove a by-product formed at an exposed portion of the data line, the source electrode and drain electrode. Thus, corrosion of the fine pattern due to an etching gas may be prevented and/or reduced.

摘要翻译： 对制造显示基板的方法进行说明。 在该方法中，在基底基板上形成栅极线和栅电极。 在具有栅极线和栅电极的基底基板上形成源极金属层。 通过使用蚀刻气体蚀刻源极金属层来形成数据线，源电极和漏电极。 向具有漏电极的基底基板提供添加气体，使得添加气体与蚀刻气体的蚀刻部件反应，以除去在数据线，源电极和漏电极的暴露部分形成的副产物。 因此，可以防止和/或减少由蚀刻气体引起的精细图案的腐蚀。

公开(公告)号：US07553710B2

公开(公告)日：2009-06-30

申请号：US11873791

申请日：2007-10-17

申请人： Hong-Sick Park ,  Jong-Hyun Jeong ,  Suk-Il Yoon ,  Seong-Bae Kim ,  Wy-Yong Kim ,  Soon-Beom Huh ,  Byung-Uk Kim

发明人： Hong-Sick Park ,  Jong-Hyun Jeong ,  Suk-Il Yoon ,  Seong-Bae Kim ,  Wy-Yong Kim ,  Soon-Beom Huh ,  Byung-Uk Kim

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： G03F7/425 ,  H01L21/31133 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/458

摘要： The present invention provides a photoresist stripper including about 5 wt % to about 20 wt % alcohol amine, about 40 wt % to about 70 wt % glycol ether, about 20 wt % to about 40 wt % N-methyl pyrrolidone, and about 0.2 wt % to about 6 wt % chelating agent.

摘要翻译： 本发明提供了一种光致抗蚀剂剥离器，其包括约5重量％至约20重量％的醇胺，约40重量％至约70重量％的二醇醚，约20重量％至约40重量％的N-甲基吡咯烷酮，以及约0.2重量％ ％至约6重量％的螯合剂。

公开(公告)号：US20080142756A1

公开(公告)日：2008-06-19

申请号：US12035316

申请日：2008-02-21

申请人： Hong-sick PARK ,  Shi-yul Kim ,  Jong-hyun Choung ,  Won-suk Shin

发明人： Hong-sick PARK ,  Shi-yul Kim ,  Jong-hyun Choung ,  Won-suk Shin

IPC分类号： C09K13/06 ,  C09K13/00 ,  C09K13/02

CPC分类号： C23F1/30 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/458 ,  H01L29/4908

摘要： Provided are an etchant, a method for fabricating a wire using the etchant, and a method for fabricating a thin film transistor (TFT) substrate using the etchant. The etchant includes a material having the formula 1, ammonium acetic acid, and the remainder of deionized water, wherein the formula 1 is expressed by: M(OH)XLY   (1) where M indicates Zn, Sn, Cr, Al, Ba, Fe, Ti, Si, or B, X indicates 2 or 3, L indicates H2O, NH3, CN, COR, or NH2R, Y indicates 0, 1, 2, or 3, and R indicates an alkyl group.

摘要翻译： 提供了蚀刻剂，使用蚀刻剂制造导线的方法，以及使用蚀刻剂制造薄膜晶体管（TFT）基板的方法。 蚀刻剂包括具有式1的物质，乙酸铵和剩余的去离子水，其中式1由下式表示：<？in-line-formula description =“In-line Formulas”end =“lead”？ >（1）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中M表示 Zn，Sn，Cr，Al，Ba，Fe，Ti，Si或B，X表示2或3，L表示H 2 O，NH 3，CN， COR或NH 2 R，Y表示0,1,2或3，R表示烷基。

公开(公告)号：US20080116474A1

公开(公告)日：2008-05-22

申请号：US11986330

申请日：2007-11-20

申请人： Jong-Hyun Choung ,  Hong-Sick Park ,  Joo-Ae Youn ,  Sun-Young Hong ,  Bong-Kyun Kim ,  Won-Suk Shin ,  Byeong-Jin Lee

发明人： Jong-Hyun Choung ,  Hong-Sick Park ,  Joo-Ae Youn ,  Sun-Young Hong ,  Bong-Kyun Kim ,  Won-Suk Shin ,  Byeong-Jin Lee

IPC分类号： H01L33/00 ,  H01L21/02

CPC分类号： H01L27/124 ,  H01L27/1214 ,  H01L27/1255 ,  H01L27/1288 ,  H01L29/4908

摘要： A thin film transistor array and method of manufacturing the same include a pixel electrode formed of a transparent conductive layer on a substrate, a gate line formed of the transparent conductive layer and an opaque conductive layer on the substrate, a gate electrode connected to the gate line and formed of the transparent conductive layer and an opaque conductive layer on the substrate, a gate insulating layer which covers the gate line and the gate electrode, a semiconductor layer formed on the gate insulating layer to overlap the gate electrode, a data line which intersects the gate line, a source electrode connected to the data line to overlap a part of the semiconductor layer, and a drain electrode connected to the pixel electrode to overlap a part of the semiconductor layer.

摘要翻译： 薄膜晶体管阵列及其制造方法包括由基板上的透明导电层形成的像素电极，由透明导电层形成的栅极线和基板上的不透明导电层，连接到栅极的栅电极 并且在基板上形成透明导电层和不透明导电层，覆盖栅极线和栅极的栅极绝缘层，形成在栅极绝缘层上以与栅电极重叠的半导体层，数据线， 与栅极线相交，连接到数据线的源电极与半导体层的一部分重叠，以及连接到像素电极以与半导体层的一部分重叠的漏电极。

公开(公告)号：US07371622B2

公开(公告)日：2008-05-13

申请号：US10772293

申请日：2004-02-06

申请人： Hong-Sick Park ,  Hong-Je Cho ,  Sung-Chul Kang ,  Pong-Ok Park ,  An-Na Park

发明人： Hong-Sick Park ,  Hong-Je Cho ,  Sung-Chul Kang ,  Pong-Ok Park ,  An-Na Park

IPC分类号： H01L21/00

CPC分类号： H01L21/32134 ,  C23F1/20 ,  C23F1/26 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/4908

摘要： Gate lines including a lower Al—Nd layer and an upper MoW layer, data lines including a MoW layer, and pixel electrodes including an IZO layer are patterned using a single etchant. The etchant contains a phosphoric acid of about 50-60%, a nitric acid of about 6-10%, an acetic acid of about 15-25%, a stabilizer of about 2-5% stabilizer, and deionized water. The stabilizer includes oxy-hydride inorganic acid represented by M(OH)XLY, where M includes at least one of Zn, Sn, Cr, Al, Ba, Fe, Ti, Si and B, L includes at least one of H2O, NH3, CN and NH2R (where R is alkyl group), X is 2 or 3, and Y is 0, 1, 2 or 3.

摘要翻译： 使用单个蚀刻剂对包括下Al-Nd层和上MoW层的栅极线，包括MoW层的数据线和包括IZO层的像素电极进行图案化。 蚀刻剂含有约50-60％的磷酸，约6-10％的硝酸，约15-25％的乙酸，约2-5％的稳定剂的稳定剂和去离子水。 稳定剂包括由M（OH）x L L Y Y表示的氧化氢无机酸，其中M包括Zn，Sn，Cr，Al，Ba，Fe中的至少一种 ，Ti，Si和B，L包括H 2 O，NH 3，CN和NH 2 R中的至少一个（其中R是 烷基），X为2或3，Y为0,1,2或3。

公开(公告)号：US20070164330A1

公开(公告)日：2007-07-19

申请号：US11566886

申请日：2006-12-05

申请人： Chang-Oh Jeong ,  Hong-Sick Park ,  Shi-Yul Kim ,  Sang-Gab Kim

发明人： Chang-Oh Jeong ,  Hong-Sick Park ,  Shi-Yul Kim ,  Sang-Gab Kim

IPC分类号： H01L31/113

CPC分类号： G02F1/136286 ,  G02F2001/133397 ,  G02F2001/13629 ,  G02F2201/501 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/42384

摘要： A display substrate includes a base substrate, a first metal pattern, a gate insulating layer, a second metal pattern, a channel layer and a pixel electrode. The first metal pattern is formed on the base substrate, and includes a gate line and a gate electrode of a switching element. The gate insulating layer is formed on the base substrate including the first metal pattern. The second metal pattern is formed on the gate insulating layer, and includes a source electrode, a drain electrode and a source line. The channel layer is formed under the second metal pattern, and is patterned to have substantially the same side surface as a side surface of the second metal pattern. The pixel electrode is electrically connected to the drain electrode. Therefore, an afterimage on a display panel, thus improving display quality.

摘要翻译： 显示基板包括基底基板，第一金属图案，栅极绝缘层，第二金属图案，沟道层和像素电极。 第一金属图案形成在基底基板上，并且包括开关元件的栅极线和栅电极。 栅极绝缘层形成在包括第一金属图案的基底基板上。 第二金属图案形成在栅极绝缘层上，并且包括源电极，漏电极和源极线。 沟道层形成在第二金属图案之下，并且被图案化以具有与第二金属图案的侧表面基本相同的侧表面。 像素电极电连接到漏电极。 因此，在显示面板上留下余像，从而提高显示质量。

公开(公告)号：US20070020910A1

公开(公告)日：2007-01-25

申请号：US11493225

申请日：2006-07-25

申请人： Hong-sick Park ,  Shi-yul Kim ,  Jong-hyun Choung ,  Won-suk Shin

发明人： Hong-sick Park ,  Shi-yul Kim ,  Jong-hyun Choung ,  Won-suk Shin

IPC分类号： H01L21/44

CPC分类号： G03F7/425 ,  H01L21/2855 ,  H01L21/31133 ,  H01L21/76838 ,  H01L21/7685 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/4908

摘要： A photoresist stripper composition, a method for forming wire structures thereby, and a method of fabricating a thin film transistor substrate using the composition. The photoresist stripper composition includes about 50 WT % to about 70 WT % of butyldiglycol, about 20 to about 40 WT % of an alkylpyrrolidone, about 1 WT % to about 10 WT % of an organic amine compound, about 1 to about 5 WT % of aminopropylmorpholine, and about 0.01 to about 0.5 WT % of a mercapto compound.

摘要翻译： 光致抗蚀剂剥离剂组合物，由此形成引线结构的方法，以及使用该组合物制造薄膜晶体管基板的方法。 光致抗蚀剂剥离剂组合物包含约50WW％至约70WT％的丁基二甘醇，约20至约40WT％的烷基吡咯烷酮，约1％WT至约10％WT的有机胺化合物，约1至约5％WT％ 的氨基丙基吗啉和约0.01至约0.5WT％的巯基化合物。