公开(公告)号：US07943195B2

公开(公告)日：2011-05-17

申请号：US12115838

申请日：2008-05-06

申请人： Raymond Nicholas Vrtis ,  Mark Leonard O'Neill ,  Jean Louise Vincent ,  Aaron Scott Lukas ,  Manchao Xiao ,  John Anthony Thomas Norman

发明人： Raymond Nicholas Vrtis ,  Mark Leonard O'Neill ,  Jean Louise Vincent ,  Aaron Scott Lukas ,  Manchao Xiao ,  John Anthony Thomas Norman

IPC分类号： C23C16/40 ,  C23C16/22 ,  C23C16/56

CPC分类号： H01L21/02126 ,  C23C16/401 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02343 ,  H01L21/02351 ,  H01L21/31695 ,  Y10T428/31504

摘要： A porous organosilica glass (OSG) film consists of a single phase of a material represented by the formula SivOwCxHyFz, where v+w+x+y+z=100%, v is from 10 to 35 atomic %, w is from 10 to 65 atomic %, x is from 5 to 30 atomic %, y is from 10 to 50 atomic % and z is from 0 to 15 atomic %, wherein the film has pores and a dielectric constant less than 2.6. The film is provided by a chemical vapor deposition method in which a preliminary film is deposited from organosilane and/or organosiloxane precursors and pore-forming agents (porogens), which can be independent of, or bonded to, the precursors. The porogens are subsequently removed to provide the porous film. Compositions, such as kits, for forming the films include porogens and precursors. Porogenated precursors are also useful for providing the film.

摘要翻译： 多孔有机硅玻璃（OSG）膜由式SivOwCxHyFz表示的材料的单相组成，其中v + w + x + y + z = 100％，v为10〜35原子％，w为10〜 65原子％，x为5〜30原子％，y为10〜50原子％，z为0〜15原子％，其中，膜的孔隙和介电常数小于2.6。 该薄膜通过化学气相沉积方法提供，其中预备薄膜由有机硅烷和/或有机硅氧烷前体和成孔剂（致孔剂）沉积，其可以与前体无关或与之结合。 随后除去致孔剂以提供多孔膜。 用于形成膜的组合物，例如试剂盒包括致孔剂和前体。 致孔前体也可用于提供薄膜。

公开(公告)号：US20090095346A1

公开(公告)日：2009-04-16

申请号：US12244455

申请日：2008-10-02

申请人： Patrick Timothy Hurley ,  Robert Gordon Ridgeway ,  Raymond Nicholas Vrtis ,  Mark Leonard O'Neill ,  Andrew David Johnson

发明人： Patrick Timothy Hurley ,  Robert Gordon Ridgeway ,  Raymond Nicholas Vrtis ,  Mark Leonard O'Neill ,  Andrew David Johnson

IPC分类号： H01L31/04 ,  H01L31/18

CPC分类号： C23C16/30 ,  H01L21/3148 ,  H01L31/02168 ,  H01L31/0236 ,  H01L31/02363 ,  H01L31/18 ,  Y02E10/50 ,  Y02E10/547

摘要： A process is provided for making a photovoltaic device comprising a silicon substrate comprising a p-n junction, the process comprising the steps of: forming an amorphous silicon carbide antireflective coating over at least one surface of the silicon substrate by chemical vapor deposition of a composition comprising a precursor selected from the group consisting of an organosilane, an aminosilane, and mixtures thereof, wherein the amorphous silicon carbide antireflective coating is a film represented by the formula SivCxNuHyFz, wherein v+x+u+y+z=100%, v is from 1 to 35 atomic %, x is from 5 to 80 atomic %, u is from 0 to 50 atomic %, y is from 10 to 50 atomic % and z is from 0 to 15 atomic %.

摘要翻译： 提供了一种用于制造包括包括pn结的硅衬底的光伏器件的方法，该方法包括以下步骤：通过化学气相沉积在含硅化合物的组合物的化学气相沉积中在硅衬底的至少一个表面上形成非晶碳化硅抗反射涂层 选自有机硅烷，氨基硅烷及其混合物的前体，其中非晶碳化硅抗反射涂层是由式SivCxNuHyFz表示的膜，其中v + x + u + y + z = 100％，v来自 1〜35原子％，x为5〜80原子％，u为0〜50原子％，y为10〜50原子％，z为0〜15原子％。

公开(公告)号：US20080271640A1

公开(公告)日：2008-11-06

申请号：US12115838

申请日：2008-05-06

申请人： Raymond Nicholas Vrtis ,  Mark Leonard O'Neill ,  Jean Louise Vincent ,  Aaron Scott Lukas ,  Manchao Xiao ,  John Anthony Thomas Norman

发明人： Raymond Nicholas Vrtis ,  Mark Leonard O'Neill ,  Jean Louise Vincent ,  Aaron Scott Lukas ,  Manchao Xiao ,  John Anthony Thomas Norman

IPC分类号： D06M15/643 ,  C23C16/00 ,  B32B9/04 ,  C07F5/00

CPC分类号： H01L21/02126 ,  C23C16/401 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02343 ,  H01L21/02351 ,  H01L21/31695 ,  Y10T428/31504

摘要： A porous organosilica glass (OSG) film consists of a single phase of a material represented by the formula SivOwCxHyFz, where v+w+x+y+z=100%, v is from 10 to 35 atomic %, w is from 10 to 65 atomic %, x is from 5 to 30 atomic %, y is from 10 to 50 atomic % and z is from 0 to 15 atomic %, wherein the film has pores and a dielectric constant less than 2.6. The film is provided by a chemical vapor deposition method in which a preliminary film is deposited from organosilane and/or organosiloxane precursors and pore-forming agents (porogens), which can be independent of, or bonded to, the precursors. The porogens are subsequently removed to provide the porous film. Compositions, such as kits, for forming the films include porogens and precursors. Porogenated precursors are also useful for providing the film.

摘要翻译： 多孔有机硅玻璃（OSG）膜由以下分子式表示的材料的单相组成：由下式表示的材料：由下式表示的材料： 其中v + w + x + y + z = 100％，v为10〜35原子％，w为10〜65原子％，x为 5〜30原子％，y为10〜50原子％，z为0〜15原子％，其中，膜的孔隙和介电常数小于2.6。 该薄膜通过化学气相沉积方法提供，其中预备薄膜由有机硅烷和/或有机硅氧烷前体和成孔剂（致孔剂）沉积，其可以与前体无关或与之结合。 随后除去致孔剂以提供多孔膜。 用于形成膜的组合物，例如试剂盒包括致孔剂和前体。 致孔前体也可用于提供薄膜。

公开(公告)号：US07384471B2

公开(公告)日：2008-06-10

申请号：US10409468

申请日：2003-04-07

申请人： Raymond Nicholas Vrtis ,  Mark Leonard O'Neill ,  Jean Louise Vincent ,  Aaron Scott Lukas ,  Manchao Xiao ,  John Anthony Thomas Norman

发明人： Raymond Nicholas Vrtis ,  Mark Leonard O'Neill ,  Jean Louise Vincent ,  Aaron Scott Lukas ,  Manchao Xiao ,  John Anthony Thomas Norman

IPC分类号： C23C16/40 ,  C23C16/513

CPC分类号： H01L21/02126 ,  C23C16/401 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02343 ,  H01L21/02351 ,  H01L21/31695 ,  Y10T428/31504

摘要： A porous organosilica glass (OSG) film consists of a single phase of a material represented by the formula SivOwCxHyFz, where v+w+x+y+z=100%, v is from 10 to 35 atomic %, w is from 10 to 65 atomic %, x is from 5 to 30 atomic %, y is from 10 to 50 atomic % and z is from 0 to 15 atomic %, wherein the film has pores and a dielectric constant less than 2.6. The film is provided by a chemical vapor deposition method in which a preliminary film is deposited from organosilane and/or organosiloxane precursors and pore-forming agents (porogens), which can be independent of, or bonded to, the precursors. The porogens are subsequently removed to provide the porous film. Compositions, such as kits, for forming the films include porogens and precursors. Porogenated precursors are also useful for providing the film.

摘要翻译： 多孔有机硅玻璃（OSG）膜由以下分子式表示的材料的单相组成：由下式表示的材料：由下式表示的材料： 其中v + w + x + y + z = 100％，v为10〜35原子％，w为10〜65原子％，x为 5〜30原子％，y为10〜50原子％，z为0〜15原子％，其中，膜的孔隙和介电常数小于2.6。 该薄膜通过化学气相沉积方法提供，其中预备薄膜由有机硅烷和/或有机硅氧烷前体和成孔剂（致孔剂）沉积，其可以与前体无关或与之结合。 随后除去致孔剂以提供多孔膜。 用于形成膜的组合物，例如试剂盒包括致孔剂和前体。 致孔前体也可用于提供薄膜。

公开(公告)号：US07098149B2

公开(公告)日：2006-08-29

申请号：US10379466

申请日：2003-03-04

申请人： Aaron Scott Lukas ,  Mark Leonard O'Neill ,  Jean Louise Vincent ,  Raymond Nicholas Vrtis ,  Mark Daniel Bitner ,  Eugene Joseph Karwacki, Jr.

发明人： Aaron Scott Lukas ,  Mark Leonard O'Neill ,  Jean Louise Vincent ,  Raymond Nicholas Vrtis ,  Mark Daniel Bitner ,  Eugene Joseph Karwacki, Jr.

IPC分类号： H01L21/31

CPC分类号： H01L21/02126 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/31695

摘要： Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In one aspect of the present invention, an organosilicate glass film is exposed to an ultraviolet light source wherein the film after exposure has an at least 10% or greater improvement in its mechanical properties (i.e., material hardness and elastic modulus) compared to the as-deposited film.

摘要翻译： 当在集成电路中用作层间电介质时，已经确定了低介电材料和包含它们的薄膜以改善性能，以及制造其的方法。 在本发明的一个方面，将有机硅酸盐玻璃膜暴露于紫外光源，其中曝光后的膜与其相比具有至少10％或更大的机械性能（即，材料硬度和弹性模量）的改善 沉积膜。

公开(公告)号：US07074489B2

公开(公告)日：2006-07-11

申请号：US10317807

申请日：2002-12-12

申请人： Mark Leonard O'Neill ,  Aaron Scott Lukas ,  Mark Daniel Bitner ,  Jean Louise Vincent ,  Raymond Nicholas Vrtis ,  Brian K. Peterson

发明人： Mark Leonard O'Neill ,  Aaron Scott Lukas ,  Mark Daniel Bitner ,  Jean Louise Vincent ,  Raymond Nicholas Vrtis ,  Brian K. Peterson

IPC分类号： B32B9/04

CPC分类号： C03C3/04 ,  C03C3/045 ,  C03C14/00 ,  C03C14/008 ,  C23C16/30 ,  C23C16/401 ,  H01L21/02131 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/3122 ,  H01L21/3127 ,  H01L21/316 ,  H01L21/31629 ,  H01L21/31633 ,  Y10T428/31663

摘要： Organofluorosilicate glass films contain both organic species and inorganic fluorines, exclusive of significant amounts of fluorocarbon species. Preferred films are represented by the formula SivOwCxHyFz, where v+w+x+y+z=100%, v is from 10 to 35 atomic %, w is from 10 to 65 atomic % y is from 10 to 50 atomic %, x is from 1 to 30 atomic %, z is from 0.1 to 15 atomic %, and x/z is optionally greater than 0.25, wherein substantially none of the fluorine is bonded to the carbon. In one embodiment there is provided a CVD method that includes: providing a substrate within a vacuum chamber; introducing into the vacuum chamber gaseous reagents including a fluorine-providing gas, an oxygen-providing gas and at least one precursor gas selected from an organosilane and an organosiloxane; and applying energy to the gaseous reagents in the chamber to induce reaction of the gaseous reagents and to form the film on the substrate.

摘要翻译： 有机氟硅酸盐玻璃膜含有有机物质和无机氟，不含大量的碳氟化合物种类。 优选的膜由下式表示：＆lt;＆lt;＆gt;＆lt;＆lt; 其中v + w + x + y + z = 100％，v为10至35原子％，w为10至65原子％，y为10至50原子％，x为1至30原子 ％，z为0.1〜15原子％，x / z任选大于0.25，其中基本上没有氟与碳结合。 在一个实施例中，提供了一种CVD方法，其包括：在真空室内提供衬底; 向真空室中引入包含供氟气体，供氧气体和选自有机硅烷和有机硅氧烷的至少一种前体气体的气态试剂; 并向腔室中的气态试剂施加能量以诱导气态试剂的反应并在衬底上形成膜。