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    Porous low dielectric constant compositions and methods for making and using same
    8.
    发明授权
    Porous low dielectric constant compositions and methods for making and using same 有权
    多孔低介电常数组合物及其制备和使用方法

    公开(公告)号：US07332445B2

    公开(公告)日：2008-02-19

    申请号：US11228223

    申请日：2005-09-19

    申请人： Aaron Scott Lukas ,  Mark Leonard O'Neill ,  Eugene Joseph Karwacki, Jr. ,  Raymond Nicholas Vrtis ,  Jean Louise Vincent

    发明人： Aaron Scott Lukas ,  Mark Leonard O'Neill ,  Eugene Joseph Karwacki, Jr. ,  Raymond Nicholas Vrtis ,  Jean Louise Vincent

    IPC分类号： H01L21/31

    CPC分类号： C03C3/045 ,  C23C16/30 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/3122 ,  H01L21/31695 ,  Y10T428/31663

    摘要： A porous organosilicate glass (OSG) film: SivOwCxHyFz, where v+w+x+y+z=100%, v is 10 to 35 atomic %, w is 10 to 65 atomic %, x is 5 to 30 atomic %, y is 10 to 50 atomic % and z is 0 to 15 atomic %, has a silicate network with carbon bonds as methyl groups (Si—CH3) and contains pores with diameter less than 3 nm equivalent spherical diameter and dielectric constant less than 2.7. A preliminary film is deposited by a chemical vapor deposition method from organosilane and/or organosiloxane precursors, and independent pore-forming precursors. Porogen precursors form pores within the preliminary film and are subsequently removed to provide the porous film. Compositions, film forming kits, include organosilane and/or organosiloxane compounds containing at least one Si—H bond and porogen precursors of hydrocarbons containing alcohol, ether, carbonyl, carboxylic acid, ester, nitro, primary amine, secondary amine, and/or tertiary amine functionality or combinations.

    摘要翻译： 多孔有机硅酸盐玻璃（OSG）膜：其中，X，Y，X，Y， 其中v + w + x + y + z = 100％，v为10〜35原子％，w为10〜65原子％，x为5〜30原子％，y为10〜 z为0〜15原子％，具有作为甲基（Si-CH 3 3）的碳原子的硅酸盐网络，并且含有直径小于3nm的等效球径，介电常数小于2.7的孔 。 通过化学气相沉积法从有机硅烷和/或有机硅氧烷前体和独立的成孔前体沉积初步膜。 致孔剂前体在预备膜内形成孔，随后被除去以提供多孔膜。 组合物，成膜试剂盒包括含有至少一个Si-H键的有机硅烷和/或有机硅氧烷化合物，以及含有醇，醚，羰基，羧酸，酯，硝基，伯胺，仲胺和/或叔碳原子的烃的致孔剂前体 胺官能团或组合。

    Mechanical enhancer additives for low dielectric films
    9.
    发明授权
    Mechanical enhancer additives for low dielectric films 有权
    用于低介电膜的机械增强剂添加剂

    公开(公告)号：US08137764B2

    公开(公告)日：2012-03-20

    申请号：US10842503

    申请日：2004-05-11

    申请人： Jean Louise Vincent ,  Mark Leonard O'Neill ,  Raymond Nicholas Vrtis ,  Aaron Scott Lukas ,  Brian Keith Peterson ,  Mark Daniel Bitner

    发明人： Jean Louise Vincent ,  Mark Leonard O'Neill ,  Raymond Nicholas Vrtis ,  Aaron Scott Lukas ,  Brian Keith Peterson ,  Mark Daniel Bitner

    IPC分类号： C23C10/06 ,  C23C16/24

    CPC分类号： C03C11/00 ,  C03C3/045 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/31633 ,  H01L21/31695 ,  Y10T428/31663

    摘要： A chemical vapor deposition process for preparing a low dielectric constant organosilicate (OSG) having enhanced mechanical properties by adjusting the amount of organic groups, such as methyl groups, within the mixture is disclosed herein. In one embodiment of the present invention, the OSG film is deposited from a mixture comprising a first silicon-containing precursor that comprises from 3 to 4 Si—O bonds per Si atom, from 0 to 1 of bonds selected from the group consisting of Si—H, Si—Br, and Si—Cl bonds per Si atom and no Si—C bonds and a second silicon-containing precursor that comprises at least one Si—C bond per Si atom. In another embodiment of the present invention, the OSG film is deposited from a mixture comprising an asymmetric silicon-containing precursor. In either embodiment, the mixture may further contain a porogen precursor to provide a porous OSG film.

    摘要翻译： 本文公开了一种通过调节混合物内的有机基团如甲基的量来制备具有增强的机械性能的低介电常数有机硅酸盐（OSG）的化学气相沉积方法。 在本发明的一个实施方案中，OSG膜由包含第一含硅前体的混合物沉积，该第一含硅前体包含每Si原子3至4个Si-O键，0至1个选自Si -H，Si-Br和Si-Cl键，并且不具有Si-C键，并且每个Si原子包含至少一个Si-C键的第二含硅前体。 在本发明的另一个实施方案中，OSG膜由包含不对称含硅前体的混合物沉积。 在任一实施方案中，混合物还可含有孔原体前体以提供多孔OSG膜。