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    Semiconductor device using magnetic domain wall movement and method of manufacturing the same
    41.
    发明申请
    Semiconductor device using magnetic domain wall movement and method of manufacturing the same 失效
    使用磁畴壁运动的半导体器件及其制造方法

    公开(公告)号：US20080094887A1

    公开(公告)日：2008-04-24

    申请号：US11727689

    申请日：2007-03-28

    Applicant: In-jun Hwang ,  Sung-chul Lee

    Inventor： In-jun Hwang ,  Sung-chul Lee

    IPC: G11C11/14

    CPC classification number: G11C11/14 ,  G11C19/0808 ,  G11C19/0841

    Abstract: A semiconductor device using a magnetic domain wall movement and a method of manufacturing the semiconductor device are provided. The semiconductor device includes a magnetic layer that is formed on a substrate and has a plurality of magnetic domains, and a unit that supplies energy to move a magnetic domain wall in the magnetic layer. The magnetic layer is formed parallel to the substrate, and includes a plurality of prominences and a plurality of depressions alternately formed along a lengthwise direction thereof. The magnetic layer has a stepped form that secures a reliable movement of the magnetic domain wall in units of one bit.

    Abstract translation: 提供了使用磁畴壁移动的半导体器件和制造该半导体器件的方法。 半导体器件包括形成在基板上并具有多个磁畴的磁性层，以及提供能量以移动磁性层中的磁畴壁的单元。 磁性层与基板平行地形成，并且包括沿其长度方向交替形成的多个凸起和多个凹陷。 磁性层具有阶梯形状，其以一位为单位确保磁畴壁的可靠移动。

    HEATER FOR FUEL CELL SYSTEM
    42.
    发明申请
    HEATER FOR FUEL CELL SYSTEM 有权
    燃料电池系统加热器

    公开(公告)号：US20080044700A1

    公开(公告)日：2008-02-21

    申请号：US11755914

    申请日：2007-05-31

    Applicant: JIN GOO AHN ,  Ju Yong Kim ,  Sung Chul Lee ,  Chan Ho Lee ,  Yong Kul Lee ,  Leonid Gorobinskiy ,  Man Seok Han

    Inventor： JIN GOO AHN ,  Ju Yong Kim ,  Sung Chul Lee ,  Chan Ho Lee ,  Yong Kul Lee ,  Leonid Gorobinskiy ,  Man Seok Han

    IPC: H01M8/18 ,  H01M8/04

    CPC classification number: H01M8/0612 ,  H01M8/04022

    Abstract: A heater for heating a reformer of a fuel cell system includes a combustion chamber having a combustion catalyst layer; a distributor having an inner space and uniformly distributing a combustion fuel and an oxidant flowing along the inner space to the combustion catalyst layer of the combustion chamber; and an igniter igniting the combustion fuel and the oxidant, wherein the igniter is placed in the inner space of the distributor. Thus, the igniter is protected from combustion heat of the combustion catalyst layer and thus has improved durability.

    Abstract translation: 用于加热燃料电池系统的重整器的加热器包括具有燃烧催化剂层的燃烧室; 分配器，其具有内部空间并且将燃烧燃料和氧化剂均匀分布并沿内部空间流动到燃烧室的燃烧催化剂层; 点燃器点燃燃烧燃料和氧化剂，其中点火器被放置在分配器的内部空间中。 因此，点火器不受燃烧催化剂层的燃烧热的影响，从而具有改善的耐久性。

    Fuel reforming apparatus and fuel cell system with the same
    44.
    发明申请
    Fuel reforming apparatus and fuel cell system with the same 有权
    燃料重整装置与燃料电池系统相同

    公开(公告)号：US20070082237A1

    公开(公告)日：2007-04-12

    申请号：US11543251

    申请日：2006-10-05

    Applicant: Ju-Yong Kim ,  Chan-Ho Lee ,  Sung-Chul Lee ,  Dong-Myung Suh ,  Jin-Kwang Kim ,  Jin-Goo Ahn ,  Dong-Uk Lee

    Inventor： Ju-Yong Kim ,  Chan-Ho Lee ,  Sung-Chul Lee ,  Dong-Myung Suh ,  Jin-Kwang Kim ,  Jin-Goo Ahn ,  Dong-Uk Lee

    IPC: H01M8/06 ,  B01J19/00

    CPC classification number: H01M8/0612 ,  H01M8/04089 ,  H01M8/0631

    Abstract: A fuel reforming apparatus which generates a reformed gas containing hydrogen by reforming a fuel and supplies the reformed gas to a fuel cell body is provided. The fuel reforming apparatus is constructed with a burner which generates a flame by burning the fuel together with the atmospheric air, a reforming reactor which receives thermal energy of the flame and generates the reformed gas through a reforming reaction between the fuel and steam, an evaporator in which a pipeline for allowing the fuel and water to flow is disposed in the direction of the flame sprayed from the burner, with the water being evaporated by using the flame and the fuel and steam being supplied to the reforming reactor, and a spraying unit which is disposed in a direction of the sprayed flame to spray additional air into the evaporator.

    Abstract translation: 一种燃料重整装置，其通过重燃燃料生成含氢气的重整气体，并将改性气体供给燃料电池体。 燃料重整装置由燃烧器构成，该燃烧器通过与大气一起燃烧燃料而产生火焰;重整反应器，其接收火焰的热能并通过燃料和蒸汽之间的重整反应产生重整气体;蒸发器 其中用于允许燃料和水流动的管道沿着从燃烧器喷射的火焰的方向设置，水通过使用火焰蒸发，并且燃料和蒸汽被供应到重整反应器，以及喷射单元 其沿着喷射的火焰的方向设置以将额外的空气喷射到蒸发器中。

    Method of manufacturing a semiconductor device having a self-aligned structure for a split gate flash memory device
    47.
    发明授权
    Method of manufacturing a semiconductor device having a self-aligned structure for a split gate flash memory device 失效
    制造具有用于分离栅极闪存器件的自对准结构的半导体器件的方法

    公开(公告)号：US5674767A

    公开(公告)日：1997-10-07

    申请号：US500464

    申请日：1995-07-10

    Applicant: Sung Chul Lee ,  Jang Han Kim

    Inventor： Sung Chul Lee ,  Jang Han Kim

    IPC: H01L27/112 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792

    CPC classification number: H01L27/11517 ,  H01L27/115 ,  Y10S148/103

    Abstract: A method of manufacturing a nonvolatile memory device having a self-aligned structure includes the steps of forming a gate insulating film on a semiconductor substrate of a first conductivity type. A semiconductor layer is formed on the gate insulating film and etched to form floating gates and a semiconductor pattern between the floating gates. Impurity ions of a second conductivity type are implanted into the same side of the substrate as the floating gate is formed, to form a drain region. A planarizing film is deposited on the substrate and etched until the upper surfaces of the floating gates and the semiconductor pattern are exposed. The semiconductor pattern is removed and impurity ions of the second conductivity type are implanted into the substrate, to form a source region. The planarizing film is removed to expose the floating gate, and a dielectric film is formed thereon. Finally, a control gate is formed on the substrate.

    Abstract translation: 一种制造具有自对准结构的非易失性存储器件的方法包括在第一导电类型的半导体衬底上形成栅极绝缘膜的步骤。 半导体层形成在栅极绝缘膜上并被蚀刻以形成浮置栅极和浮置栅极之间的半导体图案。 将第二导电类型的杂质离子注入与形成浮栅的衬底的相同侧，以形成漏极区。 平坦化膜沉积在衬底上并被蚀刻直至浮栅和半导体图案的上表面露出。 去除半导体图案，并将第二导电类型的杂质离子注入到衬底中，以形成源区。 除去平坦化膜以露出浮栅，并在其上形成电介质膜。 最后，在基板上形成控制栅极。

    Thin film type solar cell and fabrication method thereof
    49.
    发明授权
    Thin film type solar cell and fabrication method thereof 有权
    薄膜型太阳能电池及其制造方法

    公开(公告)号：US09312405B2

    公开(公告)日：2016-04-12

    申请号：US13560951

    申请日：2012-07-27

    Applicant: Sung-Chul Lee ,  Doo-Youl Lee ,  Young-Jin Kim ,  Young-Su Kim ,  Young-Soo Kim ,  Dong-Hun Lee

    Inventor： Sung-Chul Lee ,  Doo-Youl Lee ,  Young-Jin Kim ,  Young-Su Kim ,  Young-Soo Kim ,  Dong-Hun Lee

    IPC: H01L21/00 ,  H01L31/0224 ,  H01L31/068 ,  H01L31/18

    CPC classification number: H01L31/065 ,  H01L31/02168 ,  H01L31/022441 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    Abstract: A method of fabricating a solar cell includes forming a doped portion having a first conductive type on a semiconductor substrate, growing an oxide layer on the semiconductor substrate, forming a plurality of recess portions in the oxide layer, further growing the oxide layer on the semiconductor substrate, forming a doped portion having a second conductive type on areas of the semiconductor substrate corresponding to the recess portions, forming a first conductive electrode electrically coupled to the doped portion having the first conductive type, and forming a second conductive electrode on the semiconductor substrate and electrically coupled to the doped portion having the second conductive type, wherein a gap between the doped portions having the first and second conductive types corresponds to a width of the oxide layer formed by further growing the oxide layer.

    Abstract translation: 一种制造太阳能电池的方法包括在半导体衬底上形成具有第一导电类型的掺杂部分，在半导体衬底上生长氧化物层，在氧化物层中形成多个凹陷部分，在半导体上进一步生长氧化物层 在所述半导体衬底的与所述凹部对应的区域上形成具有第二导电类型的掺杂部分，形成与所述第一导电类型的所述掺杂部分电耦合的第一导电电极，以及在所述半导体衬底上形成第二导电电极 并且电耦合到具有第二导电类型的掺杂部分，其中具有第一和第二导电类型的掺杂部分之间的间隙对应于通过进一步生长氧化物层形成的氧化物层的宽度。

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