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    ILLUMINATION OPTICS FOR EUV MICROLITHOGRAPHY
    41.
    发明申请
    ILLUMINATION OPTICS FOR EUV MICROLITHOGRAPHY 审中-公开
    EUV微观光谱的照明光学

    公开(公告)号：US20110235015A1

    公开(公告)日：2011-09-29

    申请号：US13076730

    申请日：2011-03-31

    Applicant: Guenther Dengel ,  Gero Wittich ,  Udo Dinger ,  Ralf Stuetzle ,  Martin Endres ,  Jens Ossmann ,  Berndt Warm

    Inventor： Guenther Dengel ,  Gero Wittich ,  Udo Dinger ,  Ralf Stuetzle ,  Martin Endres ,  Jens Ossmann ,  Berndt Warm

    IPC: G03B27/72

    CPC classification number: G03F7/7085 ,  G03F7/70141 ,  G03F7/702 ,  G03F7/70558

    Abstract: An illumination optics for EUV microlithography illuminates an object field with the aid of an EUV used radiation beam. Preset devices preset illumination parameters. An illumination correction device corrects the intensity distribution and/or the angular distribution of the object field illumination. The latter has an optical component to which the used radiation beam is at least partially applied upstream of the object field and which can be driven in a controlled manner. A detector acquires one of the illumination parameters. An evaluation device evaluates the detector data and converts the latter into control signals. At least one actuator displaces the optical component. During exposures, the actuators are controlled with the aid of the detector signals during the period of a projection exposure. A maximum displacement of below 8 μm is ensured for edges of the object field towards an object to be exposed. The result is an illumination optics that is used to ensure conformance with preset illumination parameters even given the most stringent demands upon precision.

    Abstract translation: 用于EUV微光刻的照明光学器件借助EUV使用的辐射束照亮物体场。 预设设备预设照明参数。 照明校正装置校正物场照明的强度分布和/或角分布。 后者具有光学部件，使用的辐射束至少部分地施加在物场的上游，并且可以以受控的方式驱动。 检测器获取照明参数之一。 评估装置评估检测器数据并将其转换成控制信号。 至少一个致动器移动光学部件。 在曝光期间，在投影曝光期间借助于检测器信号来控制致动器。 确保物体边缘朝向待曝光物体的8μm以下的最大位移。 结果是一个照明光学器件，用于确保符合预设的照明参数，即使在最严格的精度要求下。

    OPTICAL ELEMENT WITH MULTIPLE PRIMARY LIGHT SOURCES
    44.
    发明申请
    OPTICAL ELEMENT WITH MULTIPLE PRIMARY LIGHT SOURCES 有权
    具有多个主光源的光学元件

    公开(公告)号：US20090257040A1

    公开(公告)日：2009-10-15

    申请号：US12470092

    申请日：2009-05-21

    Applicant: Udo Dinger

    Inventor： Udo Dinger

    IPC: G03B27/54 ,  F21V7/00

    CPC classification number: G03B27/54 ,  G02B27/0905 ,  G02B27/0983 ,  G03F7/7005 ,  G03F7/702 ,  G03F7/70391

    Abstract: The disclosure relates to an illumination system, such as an illumination system for use in microlithography. The illumination system can include an optical element with multiple primary light sources. The illumination system can illuminate a field in a field plane having a field contour. The illumination system can be configured so that each primary light source illuminates an area in the field plane that is smaller than a size of an area encircled by the field contour.

    Abstract translation: 本公开涉及照明系统，例如用于微光刻的照明系统。 照明系统可以包括具有多个主要光源的光学元件。 照明系统可以照射具有场轮廓的场平面中的场。 照明系统可以被配置为使得每个主光源照亮场平面中的小于由场轮廓包围的区域的尺寸的区域。

    Microlithography reduction objective and projection exposure apparatus
    48.
    发明授权
    Microlithography reduction objective and projection exposure apparatus 有权
    微光学削减物镜和投影曝光装置

    公开(公告)号：US06600552B2

    公开(公告)日：2003-07-29

    申请号：US10004674

    申请日：2001-12-03

    Applicant: Udo Dinger

    Inventor： Udo Dinger

    IPC: G03B2754

    CPC classification number: G03F7/70233 ,  G02B17/0657 ,  G03F7/70275

    Abstract: A microlithography reduction objective formed from six mirrors arranged in a light path between an object plane and an image plane is provided. The microlithography reduction objective is characterized by having an image-side numerical aperture NA≧0.15. In some embodiments, the mirror closest to the image plane, i.e., the fifth mirror is arranged such that an image-side optical free working distance is greater than or equal to a used diameter of a physical mirror surface of the fifth mirror, a physical mirror surface being the area of a mirror where light rays from the object impinge. The fifth mirror may be arranged such that an image-side optical free working distance is greater than or equal to the sum of one-third the used diameter of the physical mirror surface on the fifth mirror and a length between 20 mm and 30 mm. The fifth mirror may be arranged such that the image-side optical free working distance is at least 50 mm, as well. The image-side free working distance is the physical distance between the vertex of the surface of the fifth mirror and the image plane. Other embodiments are described.

    Abstract translation: 提供由布置在物平面和像平面之间的光路中的六个反射镜形成的微光刻折射物镜。 微光学降解物镜的特征在于具有图像侧数值孔径NA> = 0.15。 在一些实施例中，最靠近图像平面的反射镜（即，第五镜）布置成使得图像侧光学自由工作距离大于或等于第五反射镜的物理镜表面的使用直径，物理 镜面是来自物体的光线撞击的镜子区域。 第五镜可以被布置成使得图像侧光学自由工作距离大于或等于第五反射镜上的物理镜表面的使用直径的三分之一与20mm和30mm之间的长度的总和。 第五镜可以被布置成使得图像侧光学自由工作距离也至少为50mm。 图像侧的自由工作距离是第五反射镜的表面的顶点与图像平面之间的物理距离。 描述其他实施例。

    Illumination system particularly for microlithography
    49.
    发明授权
    Illumination system particularly for microlithography 有权
    照明系统特别适用于微光刻

    公开(公告)号：US06438199B1

    公开(公告)日：2002-08-20

    申请号：US09679718

    申请日：2000-09-29

    Applicant: Jörg Schultz ,  Johannes Wangler ,  Karl-Heinz Schuster ,  Udo Dinger ,  Wolfgang Singer ,  Martin Antoni

    Inventor： Jörg Schultz ,  Johannes Wangler ,  Karl-Heinz Schuster ,  Udo Dinger ,  Wolfgang Singer ,  Martin Antoni

    IPC: G21K504

    CPC classification number: G21K1/06 ,  B82Y10/00 ,  G03F7/70075 ,  G03F7/70083 ,  G03F7/70091 ,  G03F7/70108 ,  G03F7/70166 ,  G03F7/702 ,  G03F7/70233 ,  G03F7/70358 ,  G03F7/708 ,  G03F7/70891 ,  G21K1/067 ,  G21K2201/06 ,  G21K2201/064

    Abstract: The invention concerns an illumination system, particularly for microlithography with wavelengths ≦193 nm, comprising a light source, a first optical component, a second optical component, an image plane and an exit pupil. The first optical component transforms the light source into a plurality of secondary light sources being imaged by the second optical component in said exit pupil. The first optical component comprises a first optical element having a plurality of first raster elements, which are imaged into said image plane producing a plurality of images being superimposed at least partially on a field in said image plane. The first raster elements deflect incoming ray bundles with first deflection angles, wherein at least two of the first deflection angles are different. The first raster elements are preferably rectangular, wherein the field is a segment of an annulus. To transform the rectangular images of the first raster elements into the segment of the annulus, the second optical component comprises a first field mirror for shaping the field to the segment of the annulus.

    Abstract translation: 本发明涉及一种照明系统，特别是对于具有波长<= 193nm的微光刻，其包括光源，第一光学部件，第二光学部件，图像平面和出射光瞳。 第一光学部件将光源变换成由所述出射光瞳中的第二光学部件成像的多个次级光源。 第一光学部件包括具有多个第一光栅元件的第一光学元件，其被成像到所述图像平面中，产生至少部分地叠加在所述图像平面中的场上的多个图像。 第一光栅元件以第一偏转角偏转入射光束，其中第一偏转角中的至少两个是不同的。 第一光栅元件优选地是矩形的，其中该场是环的一段。 为了将第一光栅元件的矩形图像变换成环形的区段，第二光学部件包括用于将场成形为环形部分的第一场镜。

    Microlithography reduction objective and projection exposure apparatus
    50.
    发明授权
    Microlithography reduction objective and projection exposure apparatus 有权
    微光学削减物镜和投影曝光装置

    公开(公告)号：US06353470B1

    公开(公告)日：2002-03-05

    申请号：US09503640

    申请日：2000-02-14

    Applicant: Udo Dinger

    Inventor： Udo Dinger

    IPC: G03B2772

    CPC classification number: G03F7/70233 ,  G02B17/0657 ,  G03F7/7025 ,  G03F7/70275

    Abstract: The invention concerns a microlithography projection objective device for short wavelengths, preferably

    Abstract translation: 本发明涉及一种用于短波长的微光刻投影物镜装置，优选<100nm，具有第一（S1），第二镜（S2），第三（S3），第四镜（S4），第五（S5）和 第六镜（S6）。 本发明的特征在于图像侧数值孔径NA> = 0.15，并且最接近被照射物体的反射镜，优选最靠近晶片的镜子被布置成使得图像侧光学自由 工作距离至少对应于最接近晶片的该反射镜的使用直径D和/或图像侧光学自由工作距离至少为该反射镜的使用直径D的三分之一与位于 20mm和30mm，和/或图像侧光学自由工作距离为至少50mm，优选为60mm。

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