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公开(公告)号：US10533246B2
公开(公告)日：2020-01-14
申请号：US15359527
申请日：2016-11-22
发明人： Michinobu Mizumura , Shuji Kudo , Koichi Kajiyama
摘要： The present invention provides a deposition mask including: a mask layer having an aperture pattern that is formed in conformity with a transparent electrode to be formed on a display surface of a display panel, with the same shape and size as the transparent electrode; and a support layer having plural support lines formed on one surface of the mask layer across the aperture pattern. In the mask, an arrangement pitch for the support lines of the support layer is set so as to reduce moire fringes or diffraction fringes that appear due to shadows of the support lines, which are transferred onto the transparent electrode as unevenness in deposition thickness.
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公开(公告)号：US20190294009A1
公开(公告)日：2019-09-26
申请号：US16435443
申请日：2019-06-07
发明人： Toshinari ARAI , Takuro TAKESHITA
IPC分类号： G02F1/1337 , G03F7/20
摘要： Polarized light emitted from a light source and transmitted through a light transmission region formed in a mask is radiated onto an exposure target object placed on a stage. The polarized light is radiated onto the exposure target object from a direction inclined by approximately 50° to approximately 70° in relation to a direction that is substantially orthogonal to a top surface of the stage.
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43.发明申请公开(公告)号：US20190267235A1
公开(公告)日：2019-08-29
申请号：US16410348
申请日：2019-05-13
IPC分类号： H01L21/02 , H01L21/20 , H01L21/268 , H01L21/67 , H01L29/786
摘要： A laser irradiation apparatus includes a light source that generates a laser beam, a projection lens that radiates the laser beam onto a predetermined region of an amorphous silicon thin film deposited on each of a plurality of thin film transistors on a glass substrate, and a projection mask pattern provided on the projection lens and has a plurality of openings so that the laser beam is radiated onto each of the plurality of thin film transistors, wherein the projection lens radiates the laser beam onto the plurality of thin film transistors on the glass substrate, which moves in a predetermined direction, through the projection mask pattern, and the projection mask pattern is provided such that the openings are not continuous in one column orthogonal to the moving direction.
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公开(公告)号：US10381417B2
公开(公告)日：2019-08-13
申请号：US15570871
申请日：2016-06-06
摘要： A white light-emitting device is capable of correcting deviations in chromaticity and includes a plurality of pixels, each of the plurality of pixels includes at least two sub-pixels, and each of the sub-pixels is a white light-emitting element. At least one sub-pixel out of the at least two sub-pixels includes a color filter. The optical characteristic of the color filter is set to correct the deviation of chromaticity of light emitted by the white light-emitting element. The white light-emitting device further controls an emission intensity of each of the white light-emitting elements.
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45.发明申请公开(公告)号：US20190245062A1
公开(公告)日：2019-08-08
申请号：US16387402
申请日：2019-04-17
发明人： Michinobu MIZUMURA
IPC分类号： H01L29/66 , H01L27/12 , H01L29/786 , H01L21/20 , H01L21/268
CPC分类号： H01L29/66757 , H01L21/20 , H01L21/2026 , H01L21/268 , H01L27/1229 , H01L27/1285 , H01L29/66765 , H01L29/78675 , H01L29/78696
摘要： The present invention provides a laser annealing method for irradiating laser light L to an amorphous silicon thin film deposited on a substrate to obtain polysilicon, the method including: multiply irradiating the laser light L while changing an irradiation area of the laser light L on the amorphous silicon thin film to achieve such a grain size distribution that a crystal grain size of the polysilicon decreases from a central portion to a side edge portion at least along a center line C of the irradiation area of the laser light L. The above laser annealing method can reduce a leak current through a simple process.
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46.发明申请公开(公告)号：US20190140103A1
公开(公告)日：2019-05-09
申请号：US16239454
申请日：2019-01-03
CPC分类号： H01L29/78678 , H01L21/02675 , H01L21/20 , H01L21/67115 , H01L27/1281 , H01L29/04 , H01L29/66765 , H01L29/78618 , H01L29/78621
摘要： The present invention provides a thin film transistor including a gate electrode, a source electrode, a drain electrode, and a semiconductor layer, which are laminated on a substrate. The semiconductor layer is a polysilicon thin film. The polysilicon thin film in regions corresponding to the source electrode and the drain electrode has a smaller crystal grain size than that of the polysilicon thin film in a channel region between the source electrode and the drain electrode.
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47.发明授权公开(公告)号：US10211343B2
公开(公告)日：2019-02-19
申请号：US15583726
申请日：2017-05-01
摘要： The present invention provides a thin film transistor including a gate electrode, a source electrode, a drain electrode, and a semiconductor layer, which are laminated on a substrate. The semiconductor layer is a polysilicon thin film. The polysilicon thin film in regions corresponding to the source electrode and the drain electrode has a smaller crystal grain size than that of the polysilicon thin film in a channel region between the source electrode and the drain electrode.
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公开(公告)号：US10208373B2
公开(公告)日：2019-02-19
申请号：US14714175
申请日：2015-05-15
发明人： Michinobu Mizumura
IPC分类号： B23K26/03 , B23K26/066 , C23C14/04 , C23C16/04 , B05B15/00
摘要： A production method for a deposition mask is provided. The production method includes the steps of: forming a mask member having a structure in which a thin-board magnetic metal member having a through hole and a resin film contact tightly with each other; forming a mark that has a specified depth by irradiating a part of the film through the through hole of the mask member with laser beams; and forming an opening pattern that penetrates the film by irradiating a predetermined position with laser beams, using the mark as a reference.
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公开(公告)号：US20180233706A1
公开(公告)日：2018-08-16
申请号：US15747816
申请日：2016-07-08
CPC分类号： H01L51/56 , H01L27/3244 , H01L51/0013 , H01L51/003 , H01L51/5016 , H01L51/5036 , H01L51/5056 , H01L51/5072 , H01L51/5088 , H01L51/5092 , H01L51/5206 , H01L51/5221 , H01L2227/326 , H01L2251/564
摘要： A method of manufacturing an organic EL element includes forming a first electrode corresponding to a color of a constituent pixel on a substrate; forming a hole injection layer; forming a hole transport layer; forming a host material layer to cause a dopant material to diffuse on the side of the substrate on which the hole transport layer is formed; bringing the host material layer into contact with a dopant material side of a donor substrate in which the dopant material is formed on a metal layer; applying a current in a stacking direction between the first electrode corresponding to the pixel of the color corresponding to the dopant material and the metal layer; separating the donor substrate from the substrate; and forming a second electrode on the side on which the host material layer in which the dopant material has diffused is formed.
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公开(公告)号：US10035162B2
公开(公告)日：2018-07-31
申请号：US14439309
申请日：2013-07-18
发明人： Michinobu Mizumura
CPC分类号： B05B12/20 , B05C21/005 , B05D1/32 , C23C14/042 , C23C16/042 , H01L21/0332 , H01L51/001
摘要： The present invention provides a deposition mask for forming a thin-pattern by depositing a deposition material on a substrate, the deposition mask includes: a thin plate-shaped magnetic metal member 1 in which a through-hole 4 having shape and dimensions greater than those of the thin-film pattern is provided at a position corresponding to the thin-film pattern; and a resin film 2 which is provided in close contact with one surface of the magnetic metal member 1 and in which an opening pattern 5 having shape and dimensions identical to those of the thin-film pattern is formed at a position corresponding to the thin-film pattern in the through-hole 4, the resin film 2 being permeable to visible light. The opening pattern 5 is provided within an opening pattern formation region 7 surrounded by a deposition shadow region 6 defined by the thickness of the magnetic metal member 1 and the maximum angle of incidence of the deposition material to the film surface in the through-hole 4.
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