公开(公告)号：US07961440B2

公开(公告)日：2011-06-14

申请号：US11863131

申请日：2007-09-27

Applicant: Hardayal Singh Gill ,  Wipul Pemsiri Jayasekara

Inventor： Hardayal Singh Gill ,  Wipul Pemsiri Jayasekara

IPC: G11B5/39

CPC classification number: G01R33/09 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3163 ,  G11B5/3929 ,  G11B2005/3996 ,  Y10T29/49048

Abstract: A magnetoresistive sensor having a greatly reduced read gap. The sensor has a pinned layer structure formed above the free layer. A layer of antiferromagnetic material (AFM layer) is formed over the pinned layer structure and has a front edge disposed toward, but recessed from the air bearing surface. An electrically conductive, magnetic lead is formed over the pinned layer and AFM layer such that the lead fills a space between the AFM layer and the air bearing surface. In this way, the read gap is distance between the outermost portion of the pinned layer structure and free layer. The thickness of the AFM layer and capping layer are not included in the read gap.

Abstract translation: 具有大大减小的读取间隙的磁阻传感器。 传感器具有形成在自由层上方的钉扎层结构。 一层反铁磁性材料（AFM层）形成在钉扎层结构之上，并且具有朝向空气轴承表面而凹进的前边缘。 在钉扎层和AFM层之上形成导电的磁性引线，使得引线填充AFM层和空气支承表面之间的空间。 以这种方式，读取间隙是钉扎层结构的最外部分和自由层之间的距离。 AFM层和覆盖层的厚度不包括在读取间隙中。

公开(公告)号：US20100108976A1

公开(公告)日：2010-05-06

申请号：US12408419

申请日：2009-03-20

Applicant: Wipul Pemsiri Jayasekara ,  April D. Schricker

Inventor： Wipul Pemsiri Jayasekara ,  April D. Schricker

IPC: H01L47/00 ,  H01L21/205

CPC classification number: H01L21/00 ,  B82Y10/00 ,  H01L27/101 ,  H01L27/1021 ,  H01L27/2409 ,  H01L27/2481 ,  H01L27/281 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/1606 ,  H01L29/45 ,  H01L45/04 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/149 ,  H01L45/1608 ,  H01L45/1616 ,  H01L45/1675 ,  H01L51/0048 ,  H01L51/0575

Abstract: Methods in accordance with this invention form microelectronic structures, such as non-volatile memories, that include carbon layers, such as carbon nanotube (“CNT”) films, in a way that protects the CNT film against damage and short-circuiting. Microelectronic structures, such as non-volatile memories, in accordance with this invention are formed in accordance with such techniques.

Abstract translation: 根据本发明的方法以保护CNT膜免受损坏和短路的方式形成包括碳层的微电子结构，例如非易失性存储器，例如碳纳米管（“CNT”）膜。 根据本发明的微电子结构，例如非易失性存储器根据这些技术形成。

公开(公告)号：US07623325B2

公开(公告)日：2009-11-24

申请号：US11239514

申请日：2005-09-29

Applicant: Wipul Pemsiri Jayasekara

Inventor： Wipul Pemsiri Jayasekara

IPC: G11B5/127

CPC classification number: G11B5/3163 ,  G01R33/09 ,  G11B5/3166 ,  G11B5/3903

Abstract: A method for providing an endpoint layer for ion milling of top of read sensor having top lead connection and sensor formed thereby. A cap layer includes a thin layer of an endpoint detection material, such as a conductive or insulating material, that is inserted in the cap layer. The endpoint detection material provides a good signal for endpoint detection during ion milling of the of the cap layer.

Abstract translation: 一种用于提供用于离散研磨顶端的端点层的方法，所述读取传感器的顶部具有顶部引线连接和由此形成的传感器。 盖层包括插入在盖层中的端点检测材料的薄层，例如导电或绝缘材料。 端点检测材料为帽层的离子铣削期间提供了一个良好的端点检测信号。

公开(公告)号：US07574791B2

公开(公告)日：2009-08-18

申请号：US11126508

申请日：2005-05-10

Applicant: Satoru Araki ,  Robert Stanley Beach ,  Marie-Claire Cyrille ,  Wipul Pemsiri Jayasekara ,  Quang Le ,  Jui-Lung Li ,  David John Seagle ,  Howard Gordon Zolla

Inventor： Satoru Araki ,  Robert Stanley Beach ,  Marie-Claire Cyrille ,  Wipul Pemsiri Jayasekara ,  Quang Le ,  Jui-Lung Li ,  David John Seagle ,  Howard Gordon Zolla

IPC: G11B5/187

CPC classification number: G11B5/3909 ,  B82Y10/00 ,  G11B5/112 ,  G11B5/3169 ,  G11B5/3906 ,  Y10T29/49041 ,  Y10T29/49044 ,  Y10T29/49046

Abstract: A method for fabricating magnetic side shields for an MR sensor of a magnetic head. Following the deposition of MR sensor layers, a first DLC layer is deposited. Milling mask layers are then deposited, and outer portions of the milling mask layers are removed such that a remaining central portion of the milling mask layers is formed having straight sidewalls and no undercuts. Outer portions of the sensor layers are then removed such that a relatively thick remaining central portion of the milling mask resides above the remaining sensor layers. A thin electrical insulation layer is deposited, followed by the deposition of magnetic side shields. A second DLC layer is deposited and the remaining mask layers are then removed utilizing a chemical mechanical polishing (CMP) liftoff step. Thereafter, the first DLC layer and the second DLC layer are removed and a second magnetic shield layer is then fabricated thereabove.

Abstract translation: 一种用于制造用于磁头的MR传感器的磁性侧屏蔽的方法。 在MR传感器层的沉积之后，沉积第一DLC层。 然后沉积铣削掩模层，并且去除铣削掩模层的外部，使得铣削掩模层的剩余中心部分形成为具有直的侧壁并且没有底切。 然后去除传感器层的外部部分，使得铣削掩模的相对较厚的剩余中心部分位于剩余传感器层的上方。 沉积薄的电绝缘层，随后沉积磁性侧屏蔽层。 沉积第二DLC层，然后利用化学机械抛光（CMP）剥离步骤除去剩余的掩模层。 此后，去除第一DLC层和第二DLC层，然后在其上制造第二磁屏蔽层。

公开(公告)号：US20090165286A1

公开(公告)日：2009-07-02

申请号：US11966106

申请日：2007-12-28

Applicant: Kuok San Ho ,  Ying Hong ,  Wipul Pemsiri Jayasekara ,  Daniele Mauri

Inventor： Kuok San Ho ,  Ying Hong ,  Wipul Pemsiri Jayasekara ,  Daniele Mauri

IPC: G11B5/127

CPC classification number: G11B5/3163 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/398 ,  Y10T29/49021 ,  Y10T29/49032 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044

Abstract: A method for manufacturing a magnetoresistive sensor that decreases the stack height of the sensor. The method includes forming a sensor structure having at its top, a Ru layer and a Ta layer over the Ru layer. An annealing process is performed to set the magnetization of the pinned layer of the sensor structure. After the annealing process has been completed and the Ta layer is no longer needed, an ion milling process is performed to remove the Ta layer.

Abstract translation: 一种降低传感器堆叠高度的磁阻传感器的制造方法。 该方法包括形成传感器结构，其顶部具有在Ru层上的Ru层和Ta层。 执行退火处理以设置传感器结构的钉扎层的磁化。 在完成退火处理并且不再需要Ta层之后，执行离子铣削处理以去除Ta层。

公开(公告)号：US20090086385A1

公开(公告)日：2009-04-02

申请号：US11863131

申请日：2007-09-27

Applicant: Hardayal Singh Gill ,  Wipul Pemsiri Jayasekara

Inventor： Hardayal Singh Gill ,  Wipul Pemsiri Jayasekara

IPC: G11B5/127 ,  G11B5/33

CPC classification number: G01R33/09 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3163 ,  G11B5/3929 ,  G11B2005/3996 ,  Y10T29/49048

Abstract: A magnetoresistive sensor having a greatly reduced read gap. The sensor has a pinned layer structure formed above the free layer. A layer of antiferromagnetic material (AFM layer) is formed over the pinned layer structure and has a front edge disposed toward, but recessed from the air bearing surface. An electrically conductive, magnetic lead is formed over the pinned layer and AFM layer such that the lead fills a space between the AFM layer and the air bearing surface. In this way, the read gap is distance between the outermost portion of the pinned layer structure and free layer. The thickness of the AFM layer and capping layer are not included in the read gap.

Abstract translation: 具有大大减小的读取间隙的磁阻传感器。 传感器具有形成在自由层上方的钉扎层结构。 一层反铁磁性材料（AFM层）形成在钉扎层结构之上，并且具有朝向空气轴承表面而凹进的前边缘。 在钉扎层和AFM层之上形成导电的磁性引线，使得引线填充AFM层和空气支承表面之间的空间。 以这种方式，读取间隙是钉扎层结构的最外部分和自由层之间的距离。 AFM层和覆盖层的厚度不包括在读取间隙中。

公开(公告)号：US07333300B2

公开(公告)日：2008-02-19

申请号：US10964123

申请日：2004-10-12

Applicant: Mark A. Church ,  Wipul Pemsiri Jayasekara ,  Howard Gordon Zolla

Inventor： Mark A. Church ,  Wipul Pemsiri Jayasekara ,  Howard Gordon Zolla

IPC: G11B5/39 ,  G11B5/455 ,  G11B5/31

CPC classification number: B24B37/042 ,  Y10T29/49034 ,  Y10T29/49046 ,  Y10T29/49048

Abstract: A method for reducing noise in a lapping guide. Selected portions of a Giant magnetoresistive device wafer are masked, thereby defining masked and unmasked regions of the wafer in which the unmasked regions include lapping guides. The wafer is bombarded with ions such that a Giant magnetoresistive effect of the unmasked regions is reduced. The GMR device is lapped, using the lapping guides to measure an extent of the lapping.

Abstract translation: 一种降低研磨导轨中噪音的方法。 掩蔽了巨型磁阻器件晶片的选定部分，由此限定晶片的掩蔽和未掩模区域，其中未掩蔽区域包括研磨引导件。 用离子轰击晶片，使得未掩蔽区域的巨磁阻效应降低。 研磨GMR装置，使用研磨导轨测量研磨的程度。

公开(公告)号：US07329362B2

公开(公告)日：2008-02-12

申请号：US11200757

申请日：2005-08-09

Applicant: Marie-Claire Cyrille ,  Ying Hong ,  Wipul Pemsiri Jayasekara

Inventor： Marie-Claire Cyrille ,  Ying Hong ,  Wipul Pemsiri Jayasekara

IPC: B44C1/22

CPC classification number: B82Y10/00 ,  B82Y25/00 ,  G01R33/09 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3909 ,  G11B2005/3996 ,  H01J2237/3114 ,  H01L43/08 ,  H01L43/12 ,  Y10T29/49046

Abstract: A method for constructing a magnetoresistive sensor which eliminates all redeposited material (redep) from the sides of the sensor. The method involves forming a mask over a plurality of sensor layers, and then performing an ion mill at an angle that is nearly normal to the surface of the sensor layers. A second (glancing) ion mill is then performed at a larger angle with respect to the normal. The first ion mill may be 0-30 degrees with respect to normal, whereas the second ion mill can be 50-89 degrees with respect to normal. The first ion mill is performed with a larger bias voltage than the second ion mill. The higher bias voltage of the first ion mill provides a well collimated ion beam to form straight vertical side walls. The lower bias voltage of the second ion mill prevent damage to the sensor layers during the removal of redep from the sides of the sensor.

Abstract translation: 一种用于构造磁阻传感器的方法，其从传感器的侧面消除所有再沉积的材料（重新进行）。 该方法包括在多个传感器层上形成掩模，然后以与传感器层的表面几乎垂直的角度执行离子磨。 然后相对于法线以较大的角度执行第二（扫视）离子磨。 第一离子磨可相对于正常为0-30度，而第二离子磨可相对于正常为50-89度。 第一离子磨机以比第二离子磨机更大的偏压进行。 第一离子磨的较高的偏置电压提供了准直的离子束以形成直立的垂直侧壁。 第二离子磨的偏置电压较低可以防止传感器层从传感器的侧面移除重新进行检测。

公开(公告)号：US07270758B2

公开(公告)日：2007-09-18

申请号：US11081222

申请日：2005-03-15

Applicant: Shawn Marie Collier Hernandez ,  Wipul Pemsiri Jayasekara ,  Timothy J. Minvielle ,  Benjamin Lu chen Wang ,  Howard Gordon Zolla

Inventor： Shawn Marie Collier Hernandez ,  Wipul Pemsiri Jayasekara ,  Timothy J. Minvielle ,  Benjamin Lu chen Wang ,  Howard Gordon Zolla

IPC: B44C1/22

CPC classification number: G11B5/3932 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3163 ,  G11B2005/3996 ,  Y10T29/26 ,  Y10T29/49028 ,  Y10T29/49044 ,  Y10T29/49052

Abstract: A method is presented for fabricating a read head having a read head sensor and a hard bias/lead layer which includes depositing a strip of sensor material in a sensor material region, and depositing strips of fast-milling dielectric material in first and second fast-milling dielectric material regions adjacent to the sensor material region. A protective layer and a layer of masking material is deposited on the strip of sensor material and the strips of fast-milling dielectric material to provide masked areas and exposed areas. A shaping source, such as an ion milling source, is provided which shapes the exposed areas. Hard bias/lead material is then deposited on the regions of sensor material and fast-milling dielectric material to form first and second leads and a cap on each of these regions. The cap of hard bias/lead material and the masking material is then removed from each of these regions.

Abstract translation: 提出了一种用于制造具有读取头传感器和硬偏压/引线层的读取头的方法，该读取头传感器和硬偏置/引线层包括在传感器材料区域中沉积传感器材料条，以及在第一和第二快速接头中沉积快速铣削介电材料的条带， 研磨与传感器材料区域相邻的介电材料区域。 保护层和掩蔽材料层沉积在传感器材料条和快速铣削电介质材料条上，以提供掩蔽区域和暴露区域。 提供成形源，例如离子铣削源，其形成暴露的区域。 然后将硬偏置/引线材料沉积在传感器材料和快速研磨电介质材料的区域上，以在这些区域中的每一个上形成第一和第二引线和盖。 然后从这些区域中的每一个去除硬偏压/铅材料的盖和掩模材料。

公开(公告)号：US07251103B2

公开(公告)日：2007-07-31

申请号：US10882507

申请日：2004-06-30

Applicant: Richard Hsiao ,  Wipul Pemsiri Jayasekara ,  Jeffrey S. Lille

Inventor： Richard Hsiao ,  Wipul Pemsiri Jayasekara ,  Jeffrey S. Lille

IPC: G11B5/147

CPC classification number: G11B5/1278

Abstract: A magnetic structure, such as a pole tip, and method for forming the same includes forming a pole tip layer of magnetic material. A layer of polyimide precursor material is added above the pole tip layer and cured. A silicon-containing resist layer is added above the layer of polyimide precursor material and patterned. The resist layer is exposed to oxygen plasma for converting the resist into a glass-like material. Exposed portions of the cured polyimide precursor material are removed for exposing portions of the pole tip layer. The exposed portions of the pole tip layer are removed for forming a pole tip. Chemical mechanical polishing (CMP) can then be performed to remove any unwanted material remaining above the pole tip.

Abstract translation: 诸如极尖的磁性结构及其形成方法包括形成磁性材料的磁极末端层。 将一层聚酰亚胺前体材料添加到极尖层上方并固化。 将含硅抗蚀剂层添加到聚酰亚胺前体材料层上方并图案化。 将抗蚀剂层暴露于氧等离子体以将抗蚀剂转化为玻璃状材料。 去除固化的聚酰亚胺前体材料的暴露部分以暴露极尖层的部分。 去除极尖端部的暴露部分以形成极尖。 然后可以进行化学机械抛光（CMP）以除去残留在极尖顶部的任何不需要的材料。