公开(公告)号：US11776789B2

公开(公告)日：2023-10-03

申请号：US17959074

申请日：2022-10-03

Applicant: Applied Materials, Inc.

Inventor： Leonid Dorf ,  Rajinder Dhindsa ,  James Rogers ,  Daniel Sang Byun ,  Evgeny Kamenetskiy ,  Yue Guo ,  Kartik Ramaswamy ,  Valentin N. Todorow ,  Olivier Luere ,  Linying Cui

IPC: H01J37/32 ,  H01L21/311 ,  H01L21/3065 ,  H01L21/683

CPC classification number: H01J37/32128 ,  H01J37/32146 ,  H01J37/32174 ,  H01J37/32183 ,  H01J37/32568 ,  H01J37/32577 ,  H01J37/32715 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/6831 ,  H01J2237/2007 ,  H01J2237/3321 ,  H01J2237/3341

Abstract: Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configured to provide a radio frequency (RF) generated RF waveform from an RF generator to one or more electrodes within a processing chamber and a pulsed-voltage (PV) waveform delivered from one or more pulsed-voltage (PV) generators to the one or more electrodes within the processing chamber. The plasma process(es) disclosed herein can be used to control the shape of an ion energy distribution function (IEDF) and the interaction of the plasma with a surface of a substrate during plasma processing.

公开(公告)号：US11551916B2

公开(公告)日：2023-01-10

申请号：US16853600

申请日：2020-04-20

Applicant: APPLIED MATERIALS, INC.

Inventor： Jaeyong Cho ,  Rajinder Dhindsa ,  James Rogers ,  Anwar Husain

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/67

Abstract: Embodiments of substrate supports are provided herein. In some embodiments, a substrate support for use in a substrate processing chamber includes a ceramic plate having a first side configured to support a substrate and a second side opposite the first side, wherein the ceramic plate includes an electrode embedded in the ceramic plate; a ceramic ring disposed about the ceramic plate and having a first side and a second side opposite the first side, wherein the ceramic ring includes a chucking electrode and a heating element embedded in the ceramic ring; and a cooling plate coupled to the second side of the ceramic plate and the second side of the ceramic ring, wherein the cooling plate includes a radially inner portion, a radially outer portion, and a thermal break disposed therebetween.

公开(公告)号：US11521828B2

公开(公告)日：2022-12-06

申请号：US15727998

申请日：2017-10-09

Applicant: Applied Materials, Inc.

Inventor： James Rogers ,  John Poulose

IPC: H01J37/32

Abstract: Disclosed herein is an apparatus for processing a substrate using an inductively coupled plasma source. An inductively coupled plasma source utilizes a power source, a shield member, and a coil coupled to the power source. In certain embodiments, the coils are arranged with a horizontal spiral grouping and a vertical extending helical grouping. The shield member, according to certain embodiments, utilizes a grounding member to function as a Faraday shield. The embodiments herein reduce parasitic losses and instabilities in the plasma created by the inductively coupled plasma in the substrate processing system.

公开(公告)号：US11462388B2

公开(公告)日：2022-10-04

申请号：US17315256

申请日：2021-05-07

Applicant: Applied Materials, Inc.

Inventor： Leonid Dorf ,  Rajinder Dhindsa ,  James Rogers ,  Daniel Sang Byun ,  Evgeny Kamenetskiy ,  Yue Guo ,  Kartik Ramaswamy ,  Valentin N. Todorow ,  Olivier Luere ,  Linying Cui

IPC: H01J37/32 ,  H01L21/311 ,  H01L21/3065 ,  H01L21/683

Abstract: Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configured to provide a radio frequency (RF) generated RF waveform from an RF generator to one or more electrodes within a processing chamber and a pulsed-voltage (PV) waveform delivered from one or more pulsed-voltage (PV) generators to the one or more electrodes within the processing chamber. The plasma process(es) disclosed herein can be used to control the shape of an ion energy distribution function (IEDF) and the interaction of the plasma with a surface of a substrate during plasma processing.

公开(公告)号：US11284500B2

公开(公告)日：2022-03-22

申请号：US16933311

申请日：2020-07-20

Applicant: Applied Materials, Inc.

Inventor： Leonid Dorf ,  Olivier Luere ,  Rajinder Dhindsa ,  James Rogers ,  Sunil Srinivasan ,  Anurag Kumar Mishra

IPC: H01J37/32 ,  H05H1/46 ,  H01J37/34 ,  H01J37/08 ,  C23C14/34 ,  C23C14/54

Abstract: Embodiments of this disclosure describe an electrode biasing scheme that enables maintaining a nearly constant sheath voltage and thus creating a mono-energetic IEDF at the surface of the substrate that consequently enables a precise control over the shape of IEDF and the profile of the features formed in the surface of the substrate.

公开(公告)号：US11069504B2

公开(公告)日：2021-07-20

申请号：US16867034

申请日：2020-05-05

Applicant: APPLIED MATERIALS, INC.

Inventor： Leonid Dorf ,  Travis Koh ,  Olivier Luere ,  Olivier Joubert ,  Philip A. Kraus ,  Rajinder Dhindsa ,  James Rogers

IPC: H01J37/08 ,  H01J37/32 ,  H01J37/248

Abstract: Systems and methods for creating arbitrarily-shaped ion energy distribution functions using shaped-pulse—bias. In an embodiment, a method includes applying a positive jump voltage to an electrode of a process chamber to neutralize a wafer surface, applying a negative jump voltage to the electrode to set a wafer voltage, and modulating the amplitude of the wafer voltage to produce a predetermined number of pulses to determine an ion energy distribution function. In another embodiment a method includes applying a positive jump voltage to an electrode of a process chamber to neutralize a wafer surface, applying a negative jump voltage to the electrode to set a wafer voltage, and applying a ramp voltage to the electrode that overcompensates for ion current on the wafer or applying a ramp voltage to the electrode that undercompensates for ion current on the wafer.

公开(公告)号：US10685807B2

公开(公告)日：2020-06-16

申请号：US16405377

申请日：2019-05-07

Applicant: APPLIED MATERIALS, INC.

Inventor： Leonid Dorf ,  Travis Koh ,  Olivier Luere ,  Olivier Joubert ,  Philip A. Kraus ,  Rajinder Dhindsa ,  James Rogers

IPC: H01J37/08 ,  H01J37/24 ,  H01J37/248 ,  H01J37/32

Abstract: Systems and methods for creating arbitrarily-shaped ion energy distribution functions using shaped-pulse-bias. In an embodiment, a method includes applying a positive jump voltage to an electrode of a process chamber to neutralize a wafer surface, applying a negative jump voltage to the electrode to set a wafer voltage, and modulating the amplitude of the wafer voltage to produce a predetermined number of pulses to determine an ion energy distribution function. In another embodiment a method includes applying a positive jump voltage to an electrode of a process chamber to neutralize a wafer surface, applying a negative jump voltage to the electrode to set a wafer voltage, and applying a ramp voltage to the electrode that overcompensates for ion current on the wafer or applying a ramp voltage to the electrode that undercompensates for ion current on the wafer.

公开(公告)号：US10553404B2

公开(公告)日：2020-02-04

申请号：US15421726

申请日：2017-02-01

Applicant: Applied Materials, Inc.

Inventor： Olivier Luere ,  Leonid Dorf ,  Sunil Srinivasan ,  Rajinder Dhindsa ,  James Rogers ,  Denis M. Koosau

IPC: H01J37/32 ,  H01L21/687 ,  H01L21/683

Abstract: Embodiments described herein generally related to a substrate processing apparatus. In one embodiment, a process kit for a substrate processing chamber disclosed herein. The process kit includes a ring having a first ring component and a second ring component, an adjustable tuning ring, and an actuating mechanism. The first ring component is interfaced with the second ring component such that the second ring component is movable relative to the first ring component forming a gap therebetween. The adjustable tuning ring is positioned beneath the ring and contacts a bottom surface of the second ring component. A top surface of the adjustable tuning ring contacts the second ring component. The actuating mechanism is interfaced with the bottom surface of the adjustable tuning ring. The actuating mechanism is configured to actuate the adjustable tuning ring such that the gap between the first ring component and the second ring component varies.

公开(公告)号：US10256075B2

公开(公告)日：2019-04-09

申请号：US15004428

申请日：2016-01-22

Applicant: Applied Materials, Inc.

Inventor： James Rogers

IPC: H01L21/306 ,  H01L21/3065 ,  H01L21/3213 ,  H01J37/32 ,  C23C16/455 ,  C23C16/52

Abstract: Techniques are disclosed for methods and apparatuses for delivering process gas for processing a substrate. In one embodiment, the method begins by injecting process gas into a processing chamber proximate an edge of a substrate disposed in the processing chamber from a first location. The method then continues by way of injecting the process gas into the processing chamber proximate the edge of the substrate disposed in the processing chamber from a second location while no gas is injected from the first location. Finally, the method finishes by way of processing the substrate in the presence of the processing gas injected from the first and second location.

公开(公告)号：US10103010B2

公开(公告)日：2018-10-16

申请号：US15951540

申请日：2018-04-12

Applicant: Applied Materials, Inc.

Inventor： Olivier Luere ,  Leonid Dorf ,  Rajinder Dhindsa ,  Sunil Srinivasan ,  Denis M. Koosau ,  James Rogers

IPC: H01J37/32

Abstract: Embodiments described herein generally related to a substrate processing apparatus. In one embodiment, a process kit for a substrate processing chamber disclosed herein. The process kit includes a first ring having a top surface and a bottom surface, an adjustable tuning ring having a top surface and a bottom surface, and an actuating mechanism. The bottom surface is supported by a substrate support member. The bottom surface at least partially extends beneath a substrate supported by the substrate support member. The adjustable tuning ring is positioned beneath the first ring. The top surface of the adjustable tuning ring and the first ring define an adjustable gap. The actuating mechanism is interfaced with the bottom surface of the adjustable tuning ring. The actuating mechanism is configured to alter the adjustable gap defined between the bottom surface of the first ring and the top surface of the adjustable tuning ring.