公开(公告)号：US11692262B2

公开(公告)日：2023-07-04

申请号：US16930794

申请日：2020-07-16

Applicant: Applied Materials, Inc.

Inventor： Alexander Jansen ,  Keith A. Miller ,  Prashanth Kothnur ,  Martin Riker ,  David Gunther ,  Emily Schooley

IPC: C23C14/35 ,  C23C14/34

CPC classification number: C23C14/354 ,  C23C14/3407 ,  C23C14/3471

Abstract: Apparatus and methods for controlling plasma profiles during PVD deposition processes are disclosed. Some embodiments utilize EM coils placed above the target to control the plasma profile during deposition.

公开(公告)号：US11676801B2

公开(公告)日：2023-06-13

申请号：US17333873

申请日：2021-05-28

Applicant: Applied Materials, Inc.

Inventor： Tiefeng Shi ,  Keith A. Miller ,  Gang Fu

IPC: H03H7/40 ,  H01J37/32 ,  H01L21/02 ,  H03H7/38

CPC classification number: H01J37/32183 ,  H01J37/32146 ,  H01L21/02266 ,  H03H7/383

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a matching network for use with a plasma processing chamber comprises an input configured to connect to a power source, an output configured to connect to the plasma processing chamber, a V/I sensor connected between the input of the matching network and an output of the power source, a load capacitor connected in parallel with at least one capacitor connected in series with a load switch, a tuning capacitor connected in series with at least one capacitor connected in parallel with a tuning switch, and a multiple level pulsing phase/magnitude module connected to the V/I sensor and to a multiple level pulsing synchronization switch driver connected to each of the load switch and the tuning switch for activating at least one of the load switch and the tuning switch in response to a control signal, which is based on a V/I sensor measurement, received from the power source.

公开(公告)号：US11661651B2

公开(公告)日：2023-05-30

申请号：US17838805

申请日：2022-06-13

Applicant: APPLIED MATERIALS, INC.

Inventor： Chao Du ,  Xing Chen ,  Keith A. Miller ,  Jothilingam Ramalingam ,  Jianxin Lei

IPC: H01J37/32 ,  C23C14/34 ,  C23C14/58 ,  C23C14/02

CPC classification number: C23C14/3414 ,  C23C14/022 ,  C23C14/5846 ,  C23C14/5873 ,  H01J37/32449 ,  H01J37/32844 ,  H01J37/32981

Abstract: Methods and apparatus for passivating a target are provided herein. For example, a method includes a) supplying an oxidizing gas into an inner volume of the process chamber; b) igniting the oxidizing gas to form a plasma and oxidize at least one of a target or target material deposited on a process kit disposed in the inner volume of the process chamber; and c) performing a cycle purge comprising: c1) providing air into the process chamber to react with the at least one of the target or target material deposited on the process kit; c2) maintaining a predetermined pressure for a predetermined time within the process chamber to generate a toxic by-product caused by the air reacting with the at least one of the target or target material deposited on the process kit; and c3) exhausting the process chamber to remove the toxic by-product.

公开(公告)号：US20220415637A1

公开(公告)日：2022-12-29

申请号：US17861421

申请日：2022-07-11

Applicant: Applied Materials, Inc.

Inventor： Jothilingam Ramalingam ,  Yong Cao ,  Ilya Lavitsky ,  Keith A. Miller ,  Tza-Jing Gung ,  Xianmin Tang ,  Shane Lavan ,  Randy D. Schmieding ,  John C. Forster ,  Kirankumar Neelasandra Savandaiah

IPC: H01J37/34 ,  C23C14/54 ,  H01J37/32 ,  C23C14/56

Abstract: A physical vapor deposition processing chamber is described. The processing chamber includes a target backing plate in a top portion of the processing chamber, a substrate support in a bottom portion of the processing chamber, a deposition ring positioned at an outer periphery of the substrate support and a shield. The substrate support has a support surface spaced a distance from the target backing plate to form a process cavity. The shield forms an outer bound of the process cavity. In-chamber cleaning methods are also described. In an embodiment, the method includes closing a bottom gas flow path of a processing chamber to a process cavity, flowing an inert gas from the bottom gas flow path, flowing a reactant into the process cavity through an opening in the shield, and evacuating the reaction gas from the process cavity.

公开(公告)号：US11492697B2

公开(公告)日：2022-11-08

申请号：US16908344

申请日：2020-06-22

Applicant: APPLIED MATERIALS, INC.

Inventor： Kirankumar Neelasandra Savandaiah ,  Keith A. Miller ,  Srinivasa Rao Yedla ,  Chandrashekar Kenchappa ,  Martin Lee Riker

IPC: C23C14/34 ,  H01J37/34

Abstract: Embodiments of process kits for use in plasma process chambers are provided herein. In some embodiments, a process kit for use in a process chamber includes an annular body having an upper portion and a lower portion extending downward and radially inward from the upper portion, wherein the annular body includes an inner surface having a first segment that extends downward, a second segment that extends radially outward from the first segment, a third segment that extends downward from the second segment, a fourth segment that extends radially outward from the third segment, a fifth segment that extends downward from the fourth segment, a sixth segment that extends radially inward from the fifth segment, a seventh segment that extends downward from the sixth segment, and an eighth segment that extends radially inward from the seventh segment.

公开(公告)号：US20220341029A1

公开(公告)日：2022-10-27

申请号：US17861969

申请日：2022-07-11

Applicant: Applied Materials, Inc.

Inventor： Alexander Jansen ,  Keith A. Miller ,  Prashanth Kothnur ,  Martin Riker ,  David Gunther ,  Emily Schooley

IPC: C23C14/35 ,  C23C14/34

Abstract: Apparatus and methods for controlling plasma profiles during PVD deposition processes are disclosed. Some embodiments utilize EM coils placed above the target to control the plasma profile during deposition.

公开(公告)号：US20220291702A1

公开(公告)日：2022-09-15

申请号：US17198619

申请日：2021-03-11

Applicant: Applied Materials, Inc.

Inventor： Philip DiGiacomo ,  Sunil Kumar Garg ,  Paul G. Kiely ,  Keith A. Miller ,  Rajat Agrawal

IPC: G05D11/13 ,  G05B15/02 ,  G01N21/67

Abstract: A system may be configured to monitor an amount of a gas species in a processing chamber using Optical Emission Spectrometry. The gas measurement may be provided as feedback to a control process that generates a target setpoint for a gas flow controller into the process chamber. This real-time process may increase/decrease the flow rate of the gas in order to maintain a process deposition mode within a transition region between primarily metallic deposition and primarily compound deposition.

公开(公告)号：US10727092B2

公开(公告)日：2020-07-28

申请号：US14056082

申请日：2013-10-17

Applicant: APPLIED MATERIALS, INC.

Inventor： Keith A. Miller

IPC: H01L21/67 ,  H01L21/687

Abstract: Embodiments of substrate support rings are provided herein. In some embodiments, an apparatus for processing substrates includes, a ring configured to be disposed about a peripheral edge of a substrate support to support at least a portion of a substrate disposed atop the substrate support, wherein the ring comprises a heater; and a power supply coupled to the heater to provide power to the heater.

公开(公告)号：US20180174873A1

公开(公告)日：2018-06-21

申请号：US15840219

申请日：2017-12-13

Applicant: Applied Materials, Inc.

Inventor： Keith A. Miller

IPC: H01L21/67 ,  C23C14/04 ,  G03F1/24 ,  H05K3/12 ,  C23C14/54 ,  C23C14/56

CPC classification number: H01L21/67167 ,  C23C14/042 ,  C23C14/14 ,  C23C14/505 ,  C23C14/542 ,  C23C14/568 ,  C23C16/06 ,  C23C16/4584 ,  G03F1/24 ,  G03F1/62 ,  H01L21/6719 ,  H01L21/67748 ,  H01L21/68764 ,  H05K3/1283

Abstract: Processing methods and apparatus for thin substrates are disclosed. The methods and apparatus rotate a thin substrate without exposing the thin substrate to pressure gradients. The apparatus and method can be part of an integrated system for depositing films on both sides of the thin substrate.

公开(公告)号：US09960021B2

公开(公告)日：2018-05-01

申请号：US14182831

申请日：2014-02-18

Applicant: APPLIED MATERIALS, INC.

Inventor： Martin Lee Riker ,  Uday Pai ,  William Fruchterman ,  Keith A. Miller ,  Muhammad M. Rasheed ,  Thanh X. Nguyen ,  Kirankumar Savandaiah

IPC: H01J37/34 ,  C23C14/34

CPC classification number: H01J37/3414 ,  C23C14/3407 ,  H01J37/3411 ,  H01J37/3423 ,  H01J37/3435

Abstract: Embodiments of target assemblies for use in substrate processing chambers are provided herein. In some embodiments, a target assembly includes a plate comprising a first side including a central portion and a support portion; a target disposed on the central portion; a plurality of recesses formed in the support portion; and a plurality of pads partially disposed in the plurality of recesses.