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    COMPUTATIONAL WAFER INSPECTION
    41.
    发明申请
    COMPUTATIONAL WAFER INSPECTION 有权
    计算水轮检查

    公开(公告)号：US20150356233A1

    公开(公告)日：2015-12-10

    申请号：US14730993

    申请日：2015-06-04

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Christophe David FOUQUET ,  Bernardo KASTRUP ,  Arie Jeffrey DEN BOEF ,  Johannes Catharinus Hubertus MULKENS ,  James Benedict KAVANAGH ,  James Patrick KOONMEN ,  Neal Patrick CALLAN

    IPC: G06F17/50 ,  H01L21/66

    CPC classification number: G06F17/5081 ,  G03F7/705 ,  G03F7/70525 ,  G03F7/7065 ,  G06F17/5009 ,  G06N7/005 ,  H01L22/20

    Abstract: Disclosed herein is a computer-implemented defect prediction method for a device manufacturing process involving processing a portion of a design layout onto a substrate, the method comprising: identifying a hot spot from the portion of the design layout; determining a range of values of a processing parameter of the device manufacturing process for the hot spot, wherein when the processing parameter has a value outside the range, a defect is produced from the hot spot with the device manufacturing process; determining an actual value of the processing parameter; determining or predicting, using the actual value, existence, probability of existence, a characteristic, or a combination thereof, of a defect produced from the hot spot with the device manufacturing process.

    Abstract translation: 这里公开了一种用于设备制造过程的计算机实现的缺陷预测方法，该方法涉及将设计布局的一部分处理到衬底上，所述方法包括：从所述设计布局的所述部分中识别热点; 确定所述热点的装置制造过程的处理参数的值的范围，其中当所述处理参数具有超出所述范围的值时，通过所述装置制造过程从所述热点产生缺陷; 确定处理参数的实际值; 使用设备制造过程从热点产生的缺陷确定或预测使用实际值存在，存在概率，特性或其组合。

    Methods and Scatterometers, Lithographic Systems, and Lithographic Processing Cells
    42.
    发明申请
    Methods and Scatterometers, Lithographic Systems, and Lithographic Processing Cells 有权
    方法和散射仪，平版印刷系统和平版印刷加工单元

    公开(公告)号：US20140139814A1

    公开(公告)日：2014-05-22

    申请号：US14149723

    申请日：2014-01-07

    Applicant: ASML Netherlands B.V.

    Inventor： Hugo Augustinus Joseph CRAMER ,  Arie Jeffrey DEN BOEF ,  Henricus Johanne Lambertus MEGENS ,  Hendrik Jan Hidde SMILDE ,  Adrianus Johanne Hendrikus SCHELLEKENS ,  Michael KUBIS

    IPC: G03F7/20 ,  G01N21/88

    CPC classification number: G03F7/70641 ,  G01B11/02 ,  G01B11/22 ,  G01B11/24 ,  G01B11/30 ,  G01N21/47 ,  G01N21/88 ,  G03F7/70608 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/7065

    Abstract: In a method of determining the focus of a lithographic apparatus used in a lithographic process on a substrate, the lithographic process is used to form a structure on the substrate, the structure having at least one feature which has an asymmetry in the printed profile which varies as a function of the focus of the lithographic apparatus on the substrate. A first image of the periodic structure is formed and detected while illuminating the structure with a first beam of radiation. The first image is formed using a first part of non-zero order diffracted radiation. A second image of the periodic structure is formed and detected while illuminating the structure with a second beam of radiation. The second image is formed using a second part of the non-zero order diffracted radiation which is symmetrically opposite to the first part in a diffraction spectrum. The ratio of the intensities of the measured first and second portions of the spectra is determined and used to determine the asymmetry in the profile of the periodic structure and/or to provide an indication of the focus on the substrate. In the same instrument, an intensity variation across the detected portion is determined as a measure of process-induced variation across the structure. A region of the structure with unwanted process variation can be identified and excluded from a measurement of the structure.

    Abstract translation: 在确定在基板上的光刻工艺中使用的光刻设备的焦点的方法中，使用光刻工艺在基板上形成结构，该结构具有至少一个特征，该特征在印刷图案中具有不对称性 作为光刻设备在基板上的焦点的函数。 在用第一辐射束照射结构的同时形成和检测周期性结构的第一图像。 第一图像使用非零阶衍射辐射的第一部分形成。 在用第二辐射束照射结构的同时形成和检测周期性结构的第二图像。 使用在衍射光谱中与第一部分对称相对的非零级衍射辐射的第二部分形成第二图像。 确定测量的第一和第二部分光谱的强度的比率并用于确定周期性结构的轮廓的不对称性和/或提供焦点在基底上的指示。 在相同的仪器中，被检测部分的强度变化被确定为整个结构的过程引起的变化的量度。 可以从结构的测量中识别并排除具有不期望的工艺变化的结构区域。

    METHOD AND SYSTEM FOR DETERMINING INFORMATION ABOUT A TARGET STRUCTURE
    45.
    发明申请
    METHOD AND SYSTEM FOR DETERMINING INFORMATION ABOUT A TARGET STRUCTURE 有权

    公开(公告)号：US20220276569A1

    公开(公告)日：2022-09-01

    申请号：US17629053

    申请日：2020-07-17

    Applicant: ASML Netherlands B.V.

    Inventor： Arie Jeffrey DEN BOEF ,  Kaustuve BHATTACHARYYA ,  Keng-Fu CHANG ,  Simon Gijsbert Josephus MATHIJSSEN

    IPC: G03F7/20

    Abstract: Methods and systems for determining information about a target structure are disclosed. In one arrangement, a value of an asymmetry indicator for the target structure is obtained. The value of the asymmetry indicator represents an amount of an overlay independent asymmetry in the target structure. An error in an initial overlay measurement performed on the target structure at a previous time is estimated. The estimation is performed using the obtained value of the asymmetry indicator and a relationship between values of the asymmetry indicator and overlay measurement errors caused at least partially by overlay independent asymmetries. An overlay in the target structure is determined using the initial overlay measurement and the estimated error.

    METROLOGY METHOD, COMPUTER PRODUCT AND SYSTEM
    48.
    发明申请
    METROLOGY METHOD, COMPUTER PRODUCT AND SYSTEM 审中-公开

    公开(公告)号：US20200301290A1

    公开(公告)日：2020-09-24

    申请号：US16893619

    申请日：2020-06-05

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Arie Jeffrey DEN BOEF ,  Kaustuve Bhattacharyya

    IPC: G03F7/20 ,  G01B11/24 ,  G01B11/27

    Abstract: A method including determining a type of structural asymmetry of the target from measured values of the target, and performing a simulation of optical measurement of the target to determine a value of an asymmetry parameter associated with the asymmetry type. A method including performing a simulation of optical measurement of a target to determine a value of an asymmetry parameter associated with a type of structural asymmetry of the target determined from measured values of the target, and analyzing a sensitivity of the asymmetry parameter to change in a target formation parameter associated with the target. A method including determining a structural asymmetry parameter of a target using a measured parameter of radiation diffracted by the target, and determining a property of a measurement beam of the target based on the structural asymmetry parameter that is least sensitive to change in a target formation parameter associated with the target.

    DETERMINATION OF STACK DIFFERENCE AND CORRECTION USING STACK DIFFERENCE
    49.
    发明申请
    DETERMINATION OF STACK DIFFERENCE AND CORRECTION USING STACK DIFFERENCE 审中-公开

    公开(公告)号：US20200012198A1

    公开(公告)日：2020-01-09

    申请号：US16575711

    申请日：2019-09-19

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Arie Jeffrey DEN BOEF ,  Kaustuve BHATTACHARYYA

    IPC: G03F7/20 ,  G01N21/47 ,  G01N21/956

    Abstract: A method including: obtaining a measurement of a metrology target on a substrate processed using a patterning process, the measurement having been obtained using measurement radiation; and deriving a parameter of interest of the patterning process from the measurement, wherein the parameter of interest is corrected by a stack difference parameter, the stack difference parameter representing an un-designed difference in physical configuration between adjacent periodic structures of the target or between the metrology target and another adjacent target on the substrate.

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