公开(公告)号：US20250166965A1

公开(公告)日：2025-05-22

申请号：US18830709

申请日：2024-09-11

Applicant: Advanced Energy Industries, Inc.

Inventor： Daniel Carter

IPC: H01J37/32 ,  H03K3/64 ,  H03K3/70 ,  H03K3/78

Abstract: Systems, methods and apparatus for regulating ion energies in a plasma chamber and avoiding excessive and damaging charge buildup on the substrate surface and within capacitive structures being built on the surface. An exemplary method includes placing a substrate in a plasma chamber, forming a plasma in the plasma chamber, controllably switching power to the substrate so as to apply a periodic voltage function (or a modified periodic voltage function) to the substrate, and modulating, over multiple cycles of the periodic voltage function, the periodic voltage function responsive to a defined distribution of energies of ions at the surface of the substrate so as to effectuate the defined distribution of ion energies on a time-averaged basis, and to maintain surface charge buildup below a threshold.

公开(公告)号：US20240242945A1

公开(公告)日：2024-07-18

申请号：US18096478

申请日：2023-01-12

Applicant: Advanced Energy Industries, Inc.

Inventor： Hien Minh Nguyen ,  Daniel Carter

IPC: H01J37/32

CPC classification number: H01J37/3299 ,  H01J37/32935 ,  H01J37/32174

Abstract: A bias supply system and methods are disclosed. The bias supply system comprises an output node, a return node, and a bias supply configured to apply an asymmetric periodic voltage waveform between the output node and the return node. A variable capacitance is coupled between the output node and the return node, and a controller is coupled to the variable capacitance. The controller is configured to receive a setting that defines a slope of a workpiece voltage, monitor electrical parameters at the output node to obtain an indication of an actual slope of the workpiece voltage, and control the variable capacitance so the actual slope of the workpiece voltage approaches the slope defined by the setting.

公开(公告)号：US11978611B2

公开(公告)日：2024-05-07

申请号：US18198790

申请日：2023-05-17

Applicant: Advanced Energy Industries, Inc.

Inventor： Daniel Carter ,  Randy Heckman ,  Victor Brouk ,  Daniel J. Hoffman

IPC: H01J37/32 ,  C23C14/34

CPC classification number: H01J37/32009 ,  C23C14/345 ,  H01J37/32174 ,  H01J37/32935 ,  H01J37/3299

Abstract: An apparatus and method to produce a waveform. The apparatus includes a first node, a first power supply coupled to a second node, a first switch that couples the second node to the first node, and responsive to the first switch being closed, a peak voltage is applied at the first node. The apparatus also includes a second switch that couples a third node to the first node, and responsive to the second switch being closed, a voltage step is applied at the first node. In addition, a second power supply is coupled to the first node to produce a ramped voltage at the first node.

公开(公告)号：US20240071721A1

公开(公告)日：2024-02-29

申请号：US18116207

申请日：2023-03-01

Applicant: Advanced Energy Industries, Inc.

Inventor： Victor Brouk ,  Daniel J. Hoffman ,  Daniel Carter

IPC: H01J37/32

CPC classification number: H01J37/32009 ,  H01J37/32146 ,  H01J37/32174 ,  H01J37/32706 ,  H01J37/32935 ,  H01J37/3299

Abstract: Systems and methods for plasma processing are disclosed. An exemplary system may include a plasma processing chamber including a source to produce a plasma in the processing chamber and at least two bias electrodes arranged within the plasma processing chamber to control plasma sheaths proximate to the bias electrodes. A chuck is disposed to support a substrate, and a source generator is coupled to the plasma electrode. At least one bias supply is coupled to the at least two bias electrodes, and a controller is included to control the at least one bias supply to control the plasma sheath(s) proximate to the bias electrodes.

公开(公告)号：US20220285131A1

公开(公告)日：2022-09-08

申请号：US17692880

申请日：2022-03-11

Applicant: Advanced Energy Industries, Inc.

Inventor： Denis Shaw ,  Kevin Fairbairn ,  Daniel Carter

IPC: H01J37/32 ,  H01L21/67

Abstract: Systems and methods for plasma processing are disclosed. An exemplary system may include a plasma processing chamber including a source to produce a plasma in the processing chamber and at least two bias electrodes arranged within the plasma processing chamber to control plasma sheaths proximate to the bias electrodes. A chuck is disposed to support a substrate, and a source generator is coupled to the plasma electrode. At least one bias supply is coupled to the at least two bias electrodes, and a controller is included to control the at least one bias supply to control the plasma sheaths proximate to the bias electrodes.

公开(公告)号：US20190180982A1

公开(公告)日：2019-06-13

申请号：US16278822

申请日：2019-02-19

Applicant: Advanced Energy Industries, Inc.

Inventor： Victor Brouk ,  Daniel J. Hoffman ,  Daniel Carter

IPC: H01J37/32

Abstract: Systems and methods for plasma processing are disclosed. An exemplary system may include a plasma processing chamber including a source to produce a plasma in the processing chamber and at least two bias electrodes arranged within the plasma processing chamber to control plasma sheaths proximate to the bias electrodes. A chuck is disposed to support a substrate, and a source generator is coupled to the plasma electrode. At least one bias supply is coupled to the at least two bias electrodes, and a controller is included to control the at least one bias supply to control the plasma sheath(s) proximate to the bias electrodes.

公开(公告)号：US10269540B1

公开(公告)日：2019-04-23

申请号：US15879868

申请日：2018-01-25

Applicant: Advanced Energy Industries, Inc.

Inventor： Daniel Carter ,  Victor Brouk

IPC: H03H11/28 ,  H01J37/32

Abstract: An impedance matching system includes an impedance matching network coupled between an alternating current (AC) generator and electrodes of a plasma chamber. The AC generator is configured to generate a multi-level pulse signal of cyclically recurring pulse intervals with differing amplitude levels. A controller or other device identifies each recurring pulse interval, and for each pulse interval, determines an impedance mis-match level between the AC generator and the electrodes, adjusts a configuration of the impedance matching network according to the determined impedance mis-match level, and stores information associated with the adjusted configuration. When an ensuing pulse interval occurs, the controller obtains the stored information from memory, adjusts the configuration of the impedance matching network according to the stored information, determines another impedance mis-match level between the AC generator and the electrodes, and adjusts the configuration of the impedance matching network to iteratively reduce the impedance mismatch level.

公开(公告)号：US10224186B2

公开(公告)日：2019-03-05

申请号：US15067060

申请日：2016-03-10

Applicant: Advanced Energy Industries, Inc.

Inventor： Scott Polak ,  Daniel Carter ,  Karen Peterson ,  Randy Grilly ,  Mike Thornton ,  Daniel J. Hoffman

IPC: H05H1/42 ,  C23C16/50 ,  H01J37/32 ,  C23C16/455 ,  C23C14/00

Abstract: This disclosure describes a remote plasma source, a gas input manifold, and related methods of making and using. In some examples, a remote plasma source is provided with a plasma chamber, a gas input manifold, and an output region. The remote plasma source also has means for introducing a gas into the plasma chamber, the means for introducing configured to impart a radial velocity and a longitudinal velocity on the gas, relative to a longitudinal axis through the remote plasma source.

公开(公告)号：US20160268104A1

公开(公告)日：2016-09-15

申请号：US15067060

申请日：2016-03-10

Applicant: Advanced Energy Industries, Inc.

Inventor： Scott Polak ,  Daniel Carter ,  Karen Peterson ,  Randy Grilly ,  Mike Thornton ,  Daniel J. Hoffman

IPC: H01J37/32

CPC classification number: H01J37/32532 ,  C23C14/0063 ,  C23C16/455 ,  C23C16/50 ,  H01J37/32357 ,  H01J37/3244 ,  H05H1/42

Abstract: This disclosure describes a remote plasma source, a gas input manifold, and related methods of making and using. In some examples, a remote plasma source is provided with a plasma chamber, a gas input manifold, and an output region. The remote plasma source also has means for introducing a gas into the plasma chamber, the means for introducing configured to impart a radial velocity and a longitudinal velocity on the gas, relative to a longitudinal axis through the remote plasma source.

Abstract translation: 本公开描述了远程等离子体源，气体输入歧管以及相关的制造和使用方法。 在一些示例中，远程等离子体源设置有等离子体室，气体输入歧管和输出区域。 远程等离子体源还具有用于将气体引入等离子体室的装置，用于引入的装置被配置成相对于通过远程等离子体源的纵轴赋予气体上的径向速度和纵向速度。

公开(公告)号：US20140061156A1

公开(公告)日：2014-03-06

申请号：US14011305

申请日：2013-08-27

Applicant: Advanced Energy Industries, Inc.

Inventor： Victor Brouk ,  Daniel J. Hoffman ,  Daniel Carter ,  Dmitri Kovalevskii

IPC: H01J37/24

CPC classification number: H01J37/32091 ,  H01J37/241 ,  H01J37/32146

Abstract: This disclosure describes systems, methods, and apparatus for operating a plasma processing chamber. In particular, a periodic voltage function combined with an ion current compensation can be provided as a bias to a substrate support as a modified periodic voltage function. This in turn effects a DC bias on the surface of the substrate that controls an ion energy of ions incident on a surface of the substrate. A peak-to-peak voltage of the periodic voltage function can control the ion energy, while the ion current compensation can control a width of an ion energy distribution function of the ions. Measuring the modified periodic voltage function can provide a means to calculate an ion current in the plasma and a sheath capacitance of the plasma sheath. The ion energy distribution function can be tailored and multiple ion energy peaks can be generated, both via control of the modified periodic voltage function.

Abstract translation: 本公开描述了用于操作等离子体处理室的系统，方法和装置。 特别地，可以将与离子电流补偿组合的周期性电压功能作为偏置提供给衬底支架作为修改的周期性电压功能。 这进一步影响基板表面上的DC偏压，该DC偏压控制入射在基板的表面上的离子的离子能。 周期电压功能的峰 - 峰电压可以控制离子能量，而离子电流补偿可以控制离子的离子能量分布函数的宽度。 测量修改的周期性电压功能可以提供计算等离子体中的离子电流和等离子体护套的护套电容的方法。 离子能量分布函数可以通过修改的周期性电压函数的控制来定制并产生多个离子能量峰值。