公开(公告)号：US07446256B2

公开(公告)日：2008-11-04

申请号：US11643708

申请日：2006-12-22

申请人： Tsutomu Kanno ,  Akihiro Sakai ,  Akihiro Odagawa ,  Satoshi Okada ,  Hideaki Adachi

发明人： Tsutomu Kanno ,  Akihiro Sakai ,  Akihiro Odagawa ,  Satoshi Okada ,  Hideaki Adachi

IPC分类号： H01L35/12

CPC分类号： H01L35/22 ,  C01G51/006 ,  C01G51/66 ,  C01P2002/52 ,  C01P2002/54 ,  C01P2002/72 ,  C01P2002/77 ,  C01P2002/78 ,  C01P2004/41 ,  C01P2004/62 ,  C01P2006/40

摘要： A thermoelectric conversion device of the present invention includes a first electrode, a second electrode, and a layered oxide arranged between the first electrode and the second electrode. The first electrode, the layered oxide, and the second electrode are arranged in this order so that a multilayer is formed. The layered oxide is formed of electric conductive layers and electric insulating layers being alternately arranged. The C axis of the layered oxide is perpendicular to the interface between the first electrode and the layered oxide. The area of the second electrode is smaller than that of the first electrode.

摘要翻译： 本发明的热电转换装置包括第一电极，第二电极和布置在第一电极和第二电极之间的层状氧化物。 第一电极，层状氧化物和第二电极按此顺序排列，从而形成多层。 层状氧化物由导电层和交替布置的电绝缘层形成。 层状氧化物的C轴垂直于第一电极和层状氧化物之间的界面。 第二电极的面积小于第一电极的面积。

公开(公告)号：US07067205B2

公开(公告)日：2006-06-27

申请号：US10730096

申请日：2003-12-09

申请人： Hideaki Adachi ,  Akihiro Odagawa

发明人： Hideaki Adachi ,  Akihiro Odagawa

IPC分类号： B32B18/00

CPC分类号： H01L35/22 ,  H01L35/34 ,  Y10T428/12528

摘要： A thermoelectric transducing material according to this invention includes a layered cobaltite based substance represented by the chemical formula AxCoO2, wherein A consists of an element or element group selected from alkali metal elements and alkali earth group elements and is compositionally modulated in a thickness-wise direction of layers in a structure of the layered cobaltite based substance.

摘要翻译： 根据本发明的热电转换材料包括由化学式A CoO 2 2表示的层状钴酸盐基物质，其中A由选自碱金属的元素或元素组成 金属元素和碱土金属元素，并且在层状钴酸盐基物质的结构中沿层的厚度方向组成调制。

公开(公告)号：US06147360A

公开(公告)日：2000-11-14

申请号：US82761

申请日：1998-05-21

申请人： Akihiro Odagawa ,  Hideaki Adachi ,  Kentaro Setsune

发明人： Akihiro Odagawa ,  Hideaki Adachi ,  Kentaro Setsune

IPC分类号： H01L39/22 ,  H01L29/06

CPC分类号： H01L39/225

摘要： This invention provides a superconducting device with good characteristics that can be reproduced at an arbitrary place on a substrate and a method of manufacturing the same. A convex region (a processed, linearly-shaped platinum thin film) of oriented metal is provided on a substrate as a gate electrode. Then, an oxide insulating film (SrTiO.sub.3 thin film) is deposited on the convex region, and further a YBa.sub.2 Cu.sub.3 O.sub.7 oxide superconducting thin film is deposited on the oxide insulating film. Accordingly, a grain boundary part is formed on the convex region. A drain electrode and a source electrode are formed facing each other with the grain boundary part in between.

摘要翻译： 本发明提供一种能够在基板上的任意位置再现的具有良好特性的超导装置及其制造方法。 在作为栅电极的基板上设置有取向金属的凸区域（经处理的线状的铂薄膜）。 然后，在凸区域上沉积氧化物绝缘膜（SrTiO 3薄膜），再在氧化物绝缘膜上沉积YBa2Cu3O7氧化物超导薄膜。 因此，在凸部形成有晶界部。 漏极电极和源极电极彼此面对地形成，晶界部分在其间。

公开(公告)号：US07163755B2

公开(公告)日：2007-01-16

申请号：US10848742

申请日：2004-05-17

申请人： Masayoshi Hiramoto ,  Nozomu Matukawa ,  Akihiro Odagawa ,  Kenji Iijima ,  Hiroshi Sakakima

发明人： Masayoshi Hiramoto ,  Nozomu Matukawa ,  Akihiro Odagawa ,  Kenji Iijima ,  Hiroshi Sakakima

IPC分类号： G11B5/39

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  H01F10/3268 ,  H01F10/3272 ,  H01F41/302 ,  H01L27/228 ,  H01L43/12 ,  Y10T428/1107 ,  Y10T428/1121 ,  Y10T428/1129 ,  Y10T428/1143 ,  Y10T428/1193

摘要： The present invention provides a vertical current-type magneto-resistive element. The element includes an intermediate layer and a pair of magnetic layers sandwiching the intermediate layer, and at least one of a free magnetic layer and a pinned magnetic layer is a multilayer film including at least one non-magnetic layer and magnetic layers sandwiching the non-magnetic layer. The element area defined by the area of the intermediate layer through which current flows perpendicular to the film is not larger than 1000 μm2.

摘要翻译： 本发明提供一种垂直电流型磁阻元件。 该元件包括中间层和夹在中间层的一对磁性层，并且自由磁性层和钉扎磁性层中的至少一个是包括至少一个非磁性层的多层膜和夹持非磁性层的磁性层， 磁性层。 由电流垂直于膜流过的中间层的区域限定的元件面积不大于1000μm2。

公开(公告)号：US06538297B2

公开(公告)日：2003-03-25

申请号：US09804867

申请日：2001-03-13

申请人： Akihiro Odagawa ,  Hiroshi Sakakima ,  Kiyoyuki Morita

发明人： Akihiro Odagawa ,  Hiroshi Sakakima ,  Kiyoyuki Morita

IPC分类号： H01L4300

CPC分类号： H01L27/224 ,  G11C11/16

摘要： A magneto-resistive device and a magneto-resistive effect type storage device are provided, which have improved selectivity and output signals by controlling bias to be applied. Two resistive devices are connected in series, and a magneto-resistive device is used for at least one of the resistive devices. When both of the resistive devices are magneto-resistive devices, their magnetic resistance should be controlled independently from each other, and by allowing the first magneto-resistive device to include a nonmagnetic substance of an electrical insulator and the second magneto-resistive device to include a nonmagnetic substance of a conductive substance, the second magneto-resistive device is operated as a bias control device for controlling the characteristics of the first magneto-resistive device so as to control the voltage to be applied to the storage device. Furthermore, when the other resistive device is configured to be a varistor type device, bias from the non-selected storage device is suppressed to improve the selectivity of the storage device.

摘要翻译： 提供了一种磁阻装置和磁阻效应型存储装置，其通过控制要施加的偏压而具有改进的选择性和输出信号。 两个电阻器件串联连接，并且阻磁器件用于至少一个电阻器件。 当两个电阻性装置都是磁阻装置时，它们的磁阻应该彼此独立地控制，并且通过允许第一磁阻装置包括电绝缘体的非磁性物质，并且第二磁阻装置包括 导电物质的非磁性物质，第二磁阻装置作为偏置控制装置运行，用于控制第一磁阻装置的特性，以便控制施加到存储装置的电压。 此外，当另一个电阻器件被配置为变阻器型器件时，来自未选择的存储器件的偏压被抑制以提高存储器件的选择性。

公开(公告)号：US5885939A

公开(公告)日：1999-03-23

申请号：US880914

申请日：1997-06-23

申请人： Yoshinori Matsunaga ,  Shuichi Fujino ,  Akihiro Odagawa ,  Youichi Enomoto

发明人： Yoshinori Matsunaga ,  Shuichi Fujino ,  Akihiro Odagawa ,  Youichi Enomoto

IPC分类号： C01G1/00 ,  C01G3/00 ,  C04B41/50 ,  C04B41/85 ,  C23C14/08 ,  C30B23/02 ,  C30B23/08 ,  C30B25/06 ,  C30B25/18 ,  C30B29/22 ,  H01L39/02 ,  H01L39/24 ,  B05D3/06 ,  B05D5/12

CPC分类号： C04B41/009 ,  C04B41/5074 ,  C04B41/85 ,  C23C14/087 ,  C30B23/02 ,  C30B29/22 ,  C30B29/225 ,  H01L39/2458 ,  Y10S428/93 ,  Y10S505/742

摘要： A process for forming a laminate of 123-type copper oxide superconductor thin films having dissimilar crystal axis orientations, a laminate of 123-type thin copper oxide superconductor layers exhibiting excellent superconducting property, and wiring for Josephson junction. A c-axis oriented single crystalline thin film of an oxide superconductor having a Y:Ba:Cu atomic ratio of substantially 1:2:3 and a lattice constant of 11.60 angstroms.ltoreq.c.ltoreq.11.70 angstroms at a temperature of 20.degree. C. under an oxygen partial pressure of 160 Torr is formed on a single crystalline substrate, and an a-axis oriented single crystalline thin film of said oxide superconductor is formed on the above laminated film relying upon a sputter deposition method.

摘要翻译： 形成具有不同晶轴取向的123型铜氧化物超导体薄膜的层叠体的制造方法，具有优异的超导性的123型薄铜氧化物超导体层的层叠体和约瑟夫逊结的配线。 氧化物超导体的c轴取向单晶薄膜，其Y：Ba：Cu原子比基本上为1:2:3，晶格常数为11.60埃，在20℃的温度下为11.70埃 在单晶衬底上形成氧分压为160Torr的DEG，并且根据溅射沉积方法在上述层叠膜上形成所述氧化物超导体的a轴取向单晶薄膜。

公开(公告)号：US07042686B2

公开(公告)日：2006-05-09

申请号：US10871165

申请日：2004-06-18

申请人： Masayoshi Hiramoto ,  Akihiro Odagawa ,  Nozomu Matukawa ,  Kenji Iijima ,  Hiroshi Sakakima

发明人： Masayoshi Hiramoto ,  Akihiro Odagawa ,  Nozomu Matukawa ,  Kenji Iijima ,  Hiroshi Sakakima

IPC分类号： G11B5/33 ,  G11B5/127 ,  H01L21/00

CPC分类号： H01L43/12 ,  H01L43/10 ,  Y10T29/49034 ,  Y10T29/49043 ,  Y10T29/49044

摘要： The present invention provides a magnetoresistive element that includes a pair of magnetic layers and an intermediate layer between the magnetic layers. The intermediate layer contains at least three elements selected from Groups 2 to 17, and the elements include at least one selected from the group consisting of F, O, N, C and B. According to the invention, a magnetoresistive element with high magnetoresistance change ratio and low resistance can be provided. The invention also provides a method for producing a magnetoresistive element. The method includes forming a precursor and forming at least one part of the intermediate layer from the precursor. The precursor is reacted with at least one reactive species selected from the group consisting of oxygen atoms, nitrogen atoms and carbon atoms in a reactive atmosphere containing the reactive species.

公开(公告)号：US20050122828A1

公开(公告)日：2005-06-09

申请号：US10953489

申请日：2004-09-28

申请人： Akihiro Odagawa ,  Hiroshi Sato ,  Toshikazu Yamada ,  Yuji Ishii ,  Isao Inoue ,  Hiroshi Akoh ,  Masashi Kawasaki ,  Hidenori Takagi

发明人： Akihiro Odagawa ,  Hiroshi Sato ,  Toshikazu Yamada ,  Yuji Ishii ,  Isao Inoue ,  Hiroshi Akoh ,  Masashi Kawasaki ,  Hidenori Takagi

IPC分类号： G11C8/02

CPC分类号： G11C11/16 ,  H01L27/228 ,  H01L43/08

摘要： A magnetic switching device of the present invention includes: at least one transition member; at least one electrode; and at least one free magnetic member. The transition member contains a perovskite compound that contains at least a rare earth element and an alkaline-earth metal, the electrode and the free magnetic member are arranged in parallel and in a noncontact manner on the transition member, at least one of the free magnetic members is coupled magnetically with the transition member, and the transition member undergoes at least ferromagnetism-antiferromagnetism transition by injecting or inducing electrons or holes, whereby a magnetization direction of at least one of the free magnetic members changes. This configuration is applicable to a magnetic memory that records/reads out magnetization information of the free magnetic layer and various magnetic devices that utilize a resistance change of the magnetoresistive effect portion.

摘要翻译： 本发明的磁性开关装置包括：至少一个过渡部件; 至少一个电极; 和至少一个自由磁性部件。 过渡构件包含至少含有稀土元素和碱土金属的钙钛矿化合物，电极和自由磁性构件平行且非接触地布置在过渡构件上，至少一个自由磁体 构件与过渡构件磁耦合，并且过渡构件通过注入或引入电子或空穴至少经历铁磁 - 反铁磁性转变，由此至少一个自由磁性构件的磁化方向改变。 该结构适用于记录/读出自由磁性层的磁化信息的磁性存储器和利用磁阻效应部分的电阻变化的各种磁性装置。

公开(公告)号：US06594120B2

公开(公告)日：2003-07-15

申请号：US09864564

申请日：2001-05-23

申请人： Akihiro Odagawa ,  Hideaki Adachi ,  Masayoshi Hiramoto ,  Nozomu Matukawa ,  Hiroshi Sakakima

发明人： Akihiro Odagawa ,  Hideaki Adachi ,  Masayoshi Hiramoto ,  Nozomu Matukawa ,  Hiroshi Sakakima

IPC分类号： G11B539

CPC分类号： H01L27/222 ,  B82Y10/00 ,  H01L43/10 ,  Y10S428/90 ,  Y10T428/1107

摘要： The present invention provides a magnetoresistive element in which discontinuity at a barrier layer interface is provided by utilizing a layered-perovskite oxide, and a device in which the foregoing magnetoresistive element is used. The element of the present invention includes a layered-perovskite oxide having a composition expressed by a formula L2(A1−zRz)2An−1MnO3n+3+x and including a (L-O)2 layer in its crystalline structure, and a pair of ferromagnetic bodies formed in contact with the layer perovskite oxide so as to sandwich the oxide. In response to bias application via the (L-O)2 layer, a magnetoresistive tunnel effect appears. In the foregoing formula, A represents at least one alkaline earth element selected from the group consisting of Ca, Sr, and Ba, L represents at least one element selected from the group consisting of Bi, Tl, and Pb, M represents at least one element selected from the group consisting of Ti, V, Cu, Ru, Ni, Mn, Co, Fe, and Cr, R represents a rare earth element, n is 1, 2, or 3, and x and z are numerical values satisfying −1≦x≦1, and 0≦z

公开(公告)号：US5719105A

公开(公告)日：1998-02-17

申请号：US328328

申请日：1994-10-24

申请人： Akihiro Odagawa ,  Youichi Enomoto ,  Shuuichi Yoshikawa

发明人： Akihiro Odagawa ,  Youichi Enomoto ,  Shuuichi Yoshikawa

IPC分类号： C01G53/00 ,  C01G1/00 ,  C23C14/08 ,  C30B29/22 ,  H01L39/12 ,  H01L39/22 ,  H01L39/00 ,  H01L39/14 ,  H01L39/74

CPC分类号： H01L39/126 ,  Y10S505/702

摘要： A superconducting element is disclosed which includes a substrate and a superconducting layer provided on the substrate and formed of an oxide having the following chemical formula: RBa.sub.2 (Cu.sub.1-x M.sub.x).sub.3 O.sub.7 wherein R represents at least one element selected from the group consisting of Y, La, Nd, Pm, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb and Lu, M represents at least one element selected from the group consisting of Al, Ti, V, Cr, Mn, Fe, Co, Ni, Zn and Ga, and x represents a number of less than 1 but greater than 0.

摘要翻译： 公开了一种超导元件，其包括衬底和设置在衬底上并由具有以下化学式的氧化物形成的超导层：RBa2（Cu1-xMx）3O7，其中R表示选自Y， La，Nd，Pm，Sm，Eu，Gd，Dy，Ho，Er，Tm，Yb和Lu中的至少一种元素，M表示选自Al，Ti，V，Cr，Mn，Fe，Co， Ni，Zn和Ga，x表示小于1但大于0的数。