公开(公告)号：US06841434B2

公开(公告)日：2005-01-11

申请号：US10395366

申请日：2003-03-25

申请人： Hidekazu Miyairi ,  Atsuo Isobe ,  Tomoaki Moriwaka ,  Akihisa Shimomura

发明人： Hidekazu Miyairi ,  Atsuo Isobe ,  Tomoaki Moriwaka ,  Akihisa Shimomura

IPC分类号： C30B1/00 ,  H01L21/20 ,  H01L21/336 ,  H01L21/768 ,  H01L21/77 ,  H01L29/04 ,  H01L29/786 ,  H01L21/84

CPC分类号： H01L21/02691 ,  C30B1/00 ,  C30B29/06 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02683 ,  H01L21/2022 ,  H01L21/2026 ,  H01L21/76825 ,  H01L21/76828 ,  H01L27/1281 ,  H01L29/045 ,  H01L29/42384 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78654 ,  H01L29/78675 ,  H01L29/78684

摘要： The objective of the invention is to provide a method of fabricating semiconductor device using a laser crystallization method capable of preventing a grain boundary from being formed on the channel-forming region of a TFT and preventing the mobility of the TFT from extremely deteriorating, on-current from decreasing, or off-current from increasing due to a grain boundary and a semiconductor device fabricated by the fabrication method. Striped (banded) or rectangular concave and convex portions are formed. Then, a semiconductor film formed on an insulating film is irradiated with a laser beam diagonally to the longitudinal direction of concave and convex portions on the insulating film.

摘要翻译： 本发明的目的是提供一种使用能够防止在TFT的沟道形成区域上形成晶界并防止TFT的迁移率极度恶化的激光晶化方法的半导体器件的制造方法， 电流来自由晶界引起的增加或截止电流，以及通过制造方法制造的半导体器件。 形成带状（带状）或矩形凹凸部。 然后，在绝缘膜上形成的半导体膜被照射在绝缘膜上的凹凸部的纵向方向上对角线的激光束。

公开(公告)号：US08686315B2

公开(公告)日：2014-04-01

申请号：US11433670

申请日：2006-05-15

申请人： Koichiro Tanaka ,  Hidekazu Miyairi ,  Aiko Shiga ,  Akihisa Shimomura ,  Atsuo Isobe

发明人： Koichiro Tanaka ,  Hidekazu Miyairi ,  Aiko Shiga ,  Akihisa Shimomura ,  Atsuo Isobe

IPC分类号： B23K26/073 ,  H01L21/268

CPC分类号： H01L21/02675 ,  B23K26/0604 ,  B23K26/0608 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/0738 ,  B23K26/352 ,  B23K2101/40 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/268 ,  H01L21/283 ,  H01L27/1285 ,  H01L27/1296 ,  H01L27/14625

摘要： The present invention is characterized in that by laser beam being slantly incident to the convex lens, an aberration such as astigmatism or the like is occurred, and the shape of the laser beam is made linear on the irradiation surface or in its neighborhood. Since the present invention has a very simple configuration, the optical adjustment is easier, and the device becomes compact in size. Furthermore, since the beam is slantly incident with respect to the irradiated body, the return beam can be prevented.

摘要翻译： 本发明的特征在于，通过激光束倾斜地入射到凸透镜，发生像散等像，并且激光束的形状在照射表面或其附近被制成线性的。 由于本发明具有非常简单的结构，因此光学调节更容易，并且器件尺寸变得紧凑。 此外，由于光束相对于照射体倾斜入射，所以可以防止返回光束。

公开(公告)号：US08551828B2

公开(公告)日：2013-10-08

申请号：US13011046

申请日：2011-01-21

申请人： Akihisa Shimomura ,  Hidekazu Miyairi

发明人： Akihisa Shimomura ,  Hidekazu Miyairi

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L21/26506 ,  H01L21/3226 ,  H01L21/76254

摘要： To suppress an effect of metal contamination caused in manufacturing an SOI substrate. After forming a damaged region by irradiating a semiconductor substrate with hydrogen ions, the semiconductor substrate is bonded to a base substrate. Heat treatment is performed to cleave the semiconductor substrate; thus an SOI substrate is manufactured. Even if metal ions enter the semiconductor substrate together with the hydrogen ions in the step of hydrogen ion irradiation, the effect of metal contamination can be suppressed by the gettering process. Accordingly, the irradiation with hydrogen ions can be performed positively by an ion doping method.

摘要翻译： 抑制在制造SOI衬底时引起的金属污染的影响。 在通过用氢离子照射半导体衬底形成损伤区域之后，将半导体衬底接合到基底衬底。 进行热处理以切割半导体衬底; 从而制造SOI衬底。 即使金属离子在氢离子照射工序中与氢离子一起进入半导体衬底，也可以通过吸杂过程来抑制金属污染的影响。 因此，通过离子掺杂法可以积极地进行氢离子的照射。

公开(公告)号：US07994021B2

公开(公告)日：2011-08-09

申请号：US11881285

申请日：2007-07-25

申请人： Hidekazu Miyairi ,  Hironobu Shoji ,  Akihisa Shimomura ,  Eiji Higa ,  Tomoaki Moriwaka ,  Shunpei Yamazaki

发明人： Hidekazu Miyairi ,  Hironobu Shoji ,  Akihisa Shimomura ,  Eiji Higa ,  Tomoaki Moriwaka ,  Shunpei Yamazaki

IPC分类号： H01L21/00

CPC分类号： H01L27/1266 ,  H01L27/1288 ,  H01L29/66765

摘要： A method of forming a semiconductor device is provided, including a step of forming a layer which absorbs light over one face of a first substrate, a step of providing a second substrate over the layer which absorbs light, a step of providing a mask to oppose the other face of the first substrate, and a step of transferring the part of the layer which absorbs light to the second substrate by irradiating the layer which absorbs light with a laser beam through the mask.

摘要翻译： 提供一种形成半导体器件的方法，包括形成在第一衬底的一个面上吸收光的层的步骤，在吸收光的层上提供第二衬底的步骤，提供掩模以对抗的步骤 第一基板的另一面，以及通过用激光束照射通过掩模吸收光的层，将吸收光的层的一部分转印到第二基板的步骤。

公开(公告)号：US07989316B2

公开(公告)日：2011-08-02

申请号：US12824775

申请日：2010-06-28

申请人： Akihisa Shimomura ,  Tatsuya Mizoi ,  Hidekazu Miyairi ,  Koichiro Tanaka

发明人： Akihisa Shimomura ,  Tatsuya Mizoi ,  Hidekazu Miyairi ,  Koichiro Tanaka

IPC分类号： H01L21/30

CPC分类号： H01L27/1266 ,  H01L21/02002 ,  H01L21/02038 ,  H01L21/3043 ,  H01L21/76254 ,  H01L27/1214 ,  H01L29/66772 ,  H01L51/5206 ,  H01L2251/554

摘要： To provide a method of manufacturing a semiconductor device in which the space between semiconductor films transferred at plural locations is narrowed. A first bonding substrate having first projections is attached to a base substrate. Then, the first bonding substrate is separated at the first projections so that first semiconductor films are formed over the base substrate. Next, a second bonding substrate having second projections is attached to the base substrate so that the second projections are placed in regions different from regions where the first semiconductor films are formed. Subsequently, the second bonding substrate is separated at the second projections so that second semiconductor films are formed over the base substrate. In the second bonding substrate, the width of each second projection in a direction (a depth direction) perpendicular to the second bonding substrate is larger than the film thickness of each first semiconductor film formed first.

摘要翻译： 提供一种制造半导体器件的方法，其中在多个位置处转移的半导体膜之间的空间变窄。 具有第一突起的第一接合衬底附接到基底衬底。 然后，第一接合基板在第一突起处分离，使得第一半导体膜形成在基底基板上。 接下来，具有第二突起的第二接合基板被附接到基底基板，使得第二突起被放置在与形成第一半导体膜的区域不同的区域中。 随后，第二接合基板在第二突起处分离，使得第二半导体膜形成在基底基板上。 在第二接合基板中，与第二接合基板垂直的方向（深度方向）上的每个第二突起的宽度大于首先形成的第一半导体膜的膜厚。

公开(公告)号：US07943885B2

公开(公告)日：2011-05-17

申请号：US11433569

申请日：2006-05-15

申请人： Koichiro Tanaka ,  Hidekazu Miyairi ,  Aiko Shiga ,  Akihisa Shimomura ,  Atsuo Isobe

发明人： Koichiro Tanaka ,  Hidekazu Miyairi ,  Aiko Shiga ,  Akihisa Shimomura ,  Atsuo Isobe

IPC分类号： B23K26/06

CPC分类号： H01L21/02675 ,  B23K26/0604 ,  B23K26/0608 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/0738 ,  B23K26/352 ,  B23K2101/40 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/268 ,  H01L21/283 ,  H01L27/1285 ,  H01L27/1296 ,  H01L27/14625

摘要： By laser beam being slantly incident to the diffractive optics, an aberration such as astigmatism or the like is occurred, and the shape of the laser beam is made linear on the irradiation surface or in its neighborhood. Since the device has a very simple configuration, the optical adjustment is easier, and the device becomes compact in size. Furthermore, since the beam is slantly incident with respect to the irradiated body, the return beam can be prevented.

摘要翻译： 通过激光束倾斜入射到衍射光学器件，发生像散等像，并且激光束的形状在照射表面或其附近被制成线性的。 由于该装置具有非常简单的配置，所以光学调节更容易，并且该装置的尺寸变得紧凑。 此外，由于光束相对于照射体倾斜入射，所以可以防止返回光束。

公开(公告)号：US07881350B2

公开(公告)日：2011-02-01

申请号：US11730973

申请日：2007-04-05

申请人： Hidekazu Miyairi ,  Akihisa Shimomura ,  Tamae Takano ,  Masaki Koyama

发明人： Hidekazu Miyairi ,  Akihisa Shimomura ,  Tamae Takano ,  Masaki Koyama

IPC分类号： H01S3/10

CPC分类号： B23K26/08 ,  B23K26/704 ,  H01S3/005 ,  H01S3/225 ,  Y10S117/904

摘要： It is an object to provide a laser apparatus, a laser irradiating method and a manufacturing method of a semiconductor device that can perform uniform a process with a laser beam to an object uniformly. The present invention provides a laser apparatus comprising an optical system for sampling a part of a laser beam emitted from an oscillator, a sensor for generating an electric signal including fluctuation in energy of the laser beam as a data from the part of the laser beam, a means for performing signal processing to the electrical signal to grasp a state of the fluctuation in energy of the laser beam, and controlling a relative speed of an beam spot of the laser beam to an object in order to change in phase with the fluctuation in energy of the laser beam.

摘要翻译： 本发明的目的是提供一种可以使激光束对物体均匀地进行均匀处理的半导体器件的激光装置，激光照射方法和制造方法。 本发明提供了一种激光装置，其包括用于对从振荡器发射的激光束的一部分进行取样的光学系统，用于产生包括激光束的能量波动的电信号作为来自激光束的一部分的数据的传感器， 用于对电信号执行信号处理以掌握激光束的能量波动的状态的装置，以及将激光束的光点相对于物体的相对速度控制为与第一激光束 激光束的能量。

公开(公告)号：US07795734B2

公开(公告)日：2010-09-14

申请号：US11636598

申请日：2006-12-11

申请人： Atsuo Isobe ,  Shunpei Yamazaki ,  Chiho Kokubo ,  Koichiro Tanaka ,  Akihisa Shimomura ,  Tatsuya Arao ,  Hidekazu Miyairi

发明人： Atsuo Isobe ,  Shunpei Yamazaki ,  Chiho Kokubo ,  Koichiro Tanaka ,  Akihisa Shimomura ,  Tatsuya Arao ,  Hidekazu Miyairi

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L29/78696 ,  H01L27/12 ,  H01L27/1281 ,  H01L27/3244 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675

摘要： To provide a semiconductor device composed of a semiconductor element or a group of semiconductor elements, in which a crystalline semiconductor film having as few grain boundaries as possible in a channel formation region is formed on an insulating surface, which can operate at high speed, which have high current drive performance, and which are less fluctuated between elements. The method of the present invention includes: forming an insulating film with an opening on a substrate having an insulating surface; forming on the insulating film and over the opening an amorphous semiconductor film or a polycrystalline semiconductor film that has randomly-formed grain boundaries; forming a crystalline semiconductor film by melting the semiconductor film, pouring the melted semiconductor into the opening of the insulating film, and crystallizing or re-crystallizing the semiconductor film; and removing the crystalline semiconductor film except a portion of the crystalline semiconductor film that is in the opening to form a gate insulating film, which is in contact with the top face of the crystalline semiconductor film, and a gate electrode.

摘要翻译： 为了提供一种由半导体元件或一组半导体元件组成的半导体器件，其中在绝缘表面上形成可在沟道形成区域中具有尽可能少的晶界的结晶半导体膜，其可以高速操作，其中 具有高电流驱动性能，并且元件之间波动较小。 本发明的方法包括：在具有绝缘表面的基板上形成具有开口的绝缘膜; 在绝缘膜上和开口上形成非晶半导体膜或随机形成晶界的多晶半导体膜; 通过熔化半导体膜形成晶体半导体膜，将熔融的半导体注入到绝缘膜的开口中，并使半导体膜结晶或再结晶; 以及去除除了开口中的结晶半导体膜的部分之外的晶体半导体膜以形成与晶体半导体膜的顶面接触的栅极绝缘膜和栅电极。

公开(公告)号：US07749818B2

公开(公告)日：2010-07-06

申请号：US10352233

申请日：2003-01-28

申请人： Atsuo Isobe ,  Shunpei Yamazaki ,  Chiho Kokubo ,  Koichiro Tanaka ,  Akihisa Shimomura ,  Tatsuya Arao ,  Hidekazu Miyairi ,  Mai Akiba

发明人： Atsuo Isobe ,  Shunpei Yamazaki ,  Chiho Kokubo ,  Koichiro Tanaka ,  Akihisa Shimomura ,  Tatsuya Arao ,  Hidekazu Miyairi ,  Mai Akiba

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L29/78696 ,  H01L27/12 ,  H01L27/1281 ,  H01L27/148 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/785 ,  H01L29/78621 ,  H01L29/78675

摘要： An objective is to provide a method of manufacturing a semiconductor device, and a semiconductor device manufactured by using the manufacturing method, in which a laser crystallization method is used that is capable of preventing the formation of grain boundaries in TFT channel formation regions, and is capable of preventing conspicuous drops in TFT mobility, reduction in the ON current, and increases in the OFF current, all due to grain boundaries. Stripe shape or rectangular shape unevenness or opening is formed. Continuous wave laser light is then irradiated to a semiconductor film formed on an insulating film. Note that although it is most preferable to use continuous wave laser light at this point, pulse wave oscillation laser light may also be used.

摘要翻译： 本发明的目的是提供一种制造半导体器件的方法以及通过使用能够防止在TFT沟道形成区域中形成晶界的激光结晶化方法而制造的半导体器件，并且是 能够防止TFT迁移率的显着下降，导通电流的降低，以及由于晶界而导致的关断电流的增加。 形成条纹形状或矩形形状不均匀或开口。 然后将连续波激光照射到形成在绝缘膜上的半导体膜。 另外，尽管在这一点上最好使用连续波激光，但也可以使用脉波振荡激光。

公开(公告)号：US07737506B2

公开(公告)日：2010-06-15

申请号：US11513054

申请日：2006-08-31

申请人： Atsuo Isobe ,  Shunpei Yamazaki ,  Chiho Kokubo ,  Koichiro Tanaka ,  Akihisa Shimomura ,  Tatsuya Arao ,  Hidekazu Miyairi ,  Mai Akiba

发明人： Atsuo Isobe ,  Shunpei Yamazaki ,  Chiho Kokubo ,  Koichiro Tanaka ,  Akihisa Shimomura ,  Tatsuya Arao ,  Hidekazu Miyairi ,  Mai Akiba

IPC分类号： H01L29/76 ,  H01L29/778 ,  H01L27/01

CPC分类号： H01L29/78696 ,  H01L27/12 ,  H01L27/1281 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675

摘要： An objective is to provide a method of manufacturing a semiconductor device, and a semiconductor device manufactured by using the manufacturing method, in which a laser crystallization method is used that is capable of preventing the formation of grain boundaries in TFT channel formation regions, and is capable of preventing conspicuous drops in TFT mobility, reduction in the ON current, and increases in the OFF current, all due to grain boundaries. Depressions and projections with stripe shape or rectangular shape are formed. Continuous wave laser light is then irradiated to a semiconductor film formed on an insulating film along the depressions and projections with stripe shape of the insulating film, or along a longitudinal axis direction or a transverse axis direction of the rectangular shape. Note that although it is most preferable to use continuous wave laser light at this point, pulse wave laser light may also be used.

摘要翻译： 本发明的目的是提供一种制造半导体器件的方法以及通过使用能够防止在TFT沟道形成区域中形成晶界的激光结晶化方法而制造的半导体器件，并且是 能够防止TFT迁移率的显着下降，导通电流的降低，以及由于晶界而导致的关断电流的增加。 形成具有条状或矩形形状的凹凸和凹凸。 然后将连续波激光照射到沿绝缘膜条纹形状的凹凸形状的绝缘膜上形成的半导体膜上，或者沿着矩形的长轴方向或横轴方向照射。 另外，尽管在这一点上最好使用连续波激光，但也可以使用脉波激光。