公开(公告)号：US07462245B2

公开(公告)日：2008-12-09

申请号：US10618900

申请日：2003-07-14

申请人： Akira Shimizu ,  Hideaki Fukuda ,  Hiroki Kanayama

发明人： Akira Shimizu ,  Hideaki Fukuda ,  Hiroki Kanayama

IPC分类号： C23C16/448 ,  C23C16/44 ,  C23C16/06

CPC分类号： C23C16/45565 ,  C23C16/4481 ,  C23C16/4557 ,  C23C16/52

摘要： A single-wafer-processing type CVD apparatus for forming a thin film on an object to be processed includes a reaction chamber, a susceptor for placing the object thereon, a shower plate for emitting a jet of reaction gas to the object, which is set up in parallel and opposing to the susceptor, an orifice for bringing a liquid raw material and a carrier gas into the reaction chamber, which is formed through the ceiling of the reaction chamber, an evaporation plate means for vaporizing the liquid raw material, which is set up in a space between the ceiling of the reaction chamber and the shower plate, and a temperature controlling mechanism for controlling the shower plate and the evaporation plate means at respective given temperatures.

摘要翻译： 用于在待处理物体上形成薄膜的单晶片加工型CVD装置包括反应室，用于放置物体的基座，用于向物体喷射反应气体喷射的喷淋板，其被设定 平行且相对于基座的孔，用于将液体原料和载气引入通过反应室顶部形成的反应室的孔，用于使液态原料蒸发的蒸发板装置 设置在反应室的顶板和喷淋板之间的空间中，以及用于在各自的给定温度下控制喷淋板和蒸发板装置的温度控制机构。

公开(公告)号：US20080054340A1

公开(公告)日：2008-03-06

申请号：US11877075

申请日：2007-10-23

申请人： Fumitaka Arai ,  Yasuhiko Matsunaga ,  Makoto Sakuma ,  Riichiro Shirota ,  Akira Shimizu

发明人： Fumitaka Arai ,  Yasuhiko Matsunaga ,  Makoto Sakuma ,  Riichiro Shirota ,  Akira Shimizu

IPC分类号： H01L29/788

CPC分类号： H01L27/115 ,  G11C16/0483 ,  G11C16/10 ,  H01L21/28273 ,  H01L27/11521 ,  H01L29/42324 ,  H01L29/42336 ,  H01L29/7883

摘要： A floating gate is formed on a semiconductor substrate via a gate insulating film. Diffused layers are formed as sources or drain regions on opposite sides of the floating gate in the semiconductor substrate. First and second control gates are formed opposite to both of the diffused layers on the opposite sides of the floating gate via an inter-gate insulating film to drive the floating gate.

摘要翻译： 通过栅极绝缘膜在半导体衬底上形成浮栅。 扩散层在半导体衬底中的浮置栅极的相对侧上形成为源区或漏极区。 第一和第二控制栅极通过栅极间绝缘膜与浮动栅极的相对侧上的两个扩散层相对形成，以驱动浮置栅极。

公开(公告)号：US20070218701A1

公开(公告)日：2007-09-20

申请号：US11376048

申请日：2006-03-15

申请人： Akira Shimizu ,  Wonyong Koh ,  Hyung-Sang Park ,  Young-Duck Tak

发明人： Akira Shimizu ,  Wonyong Koh ,  Hyung-Sang Park ,  Young-Duck Tak

IPC分类号： C23C16/00 ,  H01L21/31

CPC分类号： C23C16/45551 ,  C23C16/06 ,  C23C16/36 ,  H01L21/67161 ,  H01L21/67748 ,  H01L21/68764

摘要： An apparatus for depositing thin film on a processing target includes: a reaction space; a susceptor movable up and down and rotatable around its center axis; and isolation walls that divide the reaction space into multiple compartments including source gas compartments and purge gas compartments, wherein when the susceptor is raised for film deposition, a small gap is created between the susceptor and the isolation walls, thereby establishing gaseous separation between the respective compartments, wherein each source gas compartment and each purge gas compartment are provided alternately in a susceptor-rotating direction of the susceptor.

摘要翻译： 一种用于在处理目标上沉积薄膜的设备包括：反应空间; 感受器可上下移动并围绕其中心轴线旋转; 以及隔离壁，其将反应空间分成多个隔室，包括源气体室和净化气体室，其中当基座升高以进行薄膜沉积时，在基座和隔离壁之间产生小的间隙，从而在相应的 隔室，其中每个源气体隔室和每个吹扫气室交替地设置在基座的基座转动方向上。

公开(公告)号：US20070215036A1

公开(公告)日：2007-09-20

申请号：US11376817

申请日：2006-03-15

申请人： Hyung-Sang Park ,  Young-Duck Tak ,  Wonyong Koh ,  Akira Shimizu

发明人： Hyung-Sang Park ,  Young-Duck Tak ,  Wonyong Koh ,  Akira Shimizu

IPC分类号： C30B23/00 ,  C23C16/00

CPC分类号： C23C16/45551

摘要： Space and time co-divided atomic layer deposition (ALD) apparatuses and methods are provided. Substrates are moved (e.g., rotated) among multiple reaction zones, each of which is exposed to only one ALD reactant. At the same time, reactants are pulsed in each reaction zone, with purging or other gas removal methods between pulses. Separate exhaust passages for each reactant and purging during wafer movement minimizes particle contamination. Additionally, preferred embodiments permit different pulsing times in each reaction space, thus permitting flexibility in pulsing.

摘要翻译： 提供空间和时间共分离原子层沉积（ALD）装置和方法。 衬底在多个反应区域中移动（例如旋转），每个反应区域仅暴露于一个ALD反应物。 同时，反应物在每个反应区域被脉冲，在脉冲之间进行吹扫或其它气体去除方法。 每个反应物的分离排气通道和晶片移动过程中的清洗使颗粒污染最小化。 此外，优选实施例允许在每个反应空间中不同的脉冲时间，从而允许脉冲的灵活性。

公开(公告)号：US20070018235A1

公开(公告)日：2007-01-25

申请号：US11535514

申请日：2006-09-27

申请人： Fumitaka ARAI ,  Yasuhiko Matsunaga ,  Makoto Sakuma ,  Riichiro Shirota ,  Akira Shimizu

发明人： Fumitaka ARAI ,  Yasuhiko Matsunaga ,  Makoto Sakuma ,  Riichiro Shirota ,  Akira Shimizu

IPC分类号： H01L29/788

CPC分类号： H01L27/115 ,  G11C16/0483 ,  G11C16/10 ,  H01L21/28273 ,  H01L27/11521 ,  H01L29/42324 ,  H01L29/42336 ,  H01L29/7883

摘要： A floating gate is formed on a semiconductor substrate via a gate insulating film. Diffused layers are formed as sources or drain regions on opposite sides of the floating gate in the semiconductor substrate. First and second control gates are formed opposite to both of the diffused layers on the opposite sides of the floating gate via an inter-gate insulating film to drive the floating gate.

摘要翻译： 通过栅极绝缘膜在半导体衬底上形成浮栅。 扩散层在半导体衬底中的浮置栅极的相对侧上形成为源区或漏极区。 第一和第二控制栅极通过栅极间绝缘膜与浮动栅极的相对侧上的两个扩散层相对形成，以驱动浮置栅极。

公开(公告)号：US06986672B2

公开(公告)日：2006-01-17

申请号：US10792577

申请日：2004-03-04

申请人： Takahiro Sasaki ,  Yasuharu Nakamura ,  Akira Shimizu

发明人： Takahiro Sasaki ,  Yasuharu Nakamura ,  Akira Shimizu

IPC分类号： H01R4/66

CPC分类号： H01R4/64 ,  H01R12/592 ,  H01R13/6582 ,  H01R13/6596

摘要： A multifunctional electronic instrument includes a body of the electronic instrument, an operation display unit movably provided on the body of the electronic instrument, and a ground structure as an electric contact structure, which includes a parallel part and a contact spring piece. The parallel part includes an electrically conductive base material and an electrically insulating surface layer formed on surfaces of both sides of the base material, and is attached to a movable member that moves together with the operation display unit. The parallel part is provided with a projection. At an end of the projection, the base material is exposed in a ruptured part where the surface layer is ruptured. The ruptured part is provided with an electric contact. The contact spring piece comes in contact with the electric contact. The base material of the parallel part and the contact spring piece are electrically connected to each other.

摘要翻译： 多功能电子仪器包括电子仪器的主体，可移动地设置在电子仪器的主体上的操作显示单元和作为电接触结构的接地结构，其包括平行部分和接触弹簧片。 平行部分包括导电基材和形成在基材两面的表面上的电绝缘表面层，并且附接到与操作显示单元一起移动的可移动部件。 平行部分设置有突起。 在突起的末端，基材在表面层破裂的破裂部分中露出。 破裂部分设有电接点。 触点弹簧片与电触点接触。 平行部件和接触弹簧片的基材彼此电连接。

公开(公告)号：US06921556B2

公开(公告)日：2005-07-26

申请号：US10403179

申请日：2003-03-28

申请人： Akira Shimizu ,  Hideaki Fukuda ,  Baiei Kawano ,  Kazuo Sato

发明人： Akira Shimizu ,  Hideaki Fukuda ,  Baiei Kawano ,  Kazuo Sato

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/54 ,  H01L21/285 ,  H01L21/3065 ,  C23C16/00

CPC分类号： C23C16/45521 ,  C23C16/4409 ,  C23C16/4412 ,  C23C16/4557 ,  C23C16/45572 ,  C23C16/4585 ,  C23C16/54

摘要： A method of film deposition using a single-wafer-processing type CVD apparatus includes: (a) sealing a periphery of a susceptor to separate a reaction chamber from a wafer-handling chamber when the susceptor rises; and (b) flowing a gas from the wafer-handling chamber into the reaction chamber through at least one discharge hole formed through the susceptor via a back side and a periphery of a wafer placed on the susceptor during film deposition.

摘要翻译： 使用单晶片处理型CVD装置的成膜方法包括：（a）当基座升高时，密封基座的周边以将反应室与晶片处理室分离; 和（b）通过在膜沉积期间通过基座上的晶片的背侧和周边形成的至少一个排出孔，将气体从晶片处理室流入反应室。

公开(公告)号：US06914208B2

公开(公告)日：2005-07-05

申请号：US10706624

申请日：2003-11-12

申请人： Akira Shimizu ,  Kunitoshi Nanba

发明人： Akira Shimizu ,  Kunitoshi Nanba

IPC分类号： H01L21/302 ,  H01L21/00 ,  H01L21/3065 ,  B23K10/00

CPC分类号： H01L21/67069 ,  H01J37/32192

摘要： A batch-type etching method includes applying microwaves from the outside of a reaction chamber to semiconductor wafers after HF gas etching of the wafers to remove residual substances including H2O, CH3OH, CH3COOH and/or other by-products from surfaces of the wafers. Microwaves oscillate polar molecules of the substances and generate heat, thereby removing the substances.

摘要翻译： 间歇型蚀刻方法包括在晶片的HF气体蚀刻之后将微波从反应室的外部施加到半导体晶片以除去包括H 2 O，CH 3 N的残留物质 OH，CH 3 COOH和/或从晶片表面的其它副产物。 微波振荡物质的极性分子并产生热量，从而去除物质。

公开(公告)号：US20050098111A1

公开(公告)日：2005-05-12

申请号：US11014437

申请日：2004-12-16

申请人： Akira Shimizu ,  Hideaki Fukuda ,  Baiei Kawano ,  Kazuo Sato

发明人： Akira Shimizu ,  Hideaki Fukuda ,  Baiei Kawano ,  Kazuo Sato

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/54 ,  H01L21/285 ,  H01L21/3065 ,  C23C16/00

CPC分类号： C23C16/45521 ,  C23C16/4409 ,  C23C16/4412 ,  C23C16/4557 ,  C23C16/45572 ,  C23C16/4585 ,  C23C16/54

摘要： A single-wafer-processing type CVD apparatus includes: (a) a reaction chamber including: (i) a susceptor having at least one gas discharge hole to flow a gas into the reaction chamber via a back side and a periphery of the wafer into the reaction chamber; (ii) a showerhead; (iii) an exhaust duct positioned in the vicinity of the showerhead and provided circularly along an inner wall of the reaction chamber; and (iv) a circular separation plate provided coaxially with the exhaust duct to form a clearance with the bottom of the exhaust duct; and (b) a temperature-controlling apparatus for regulating the temperature of the showerhead. The separation plate has a sealing portion to seal a periphery of the susceptor and to separate the reaction chamber from a wafer-handling chamber when the susceptor rises.

摘要翻译： 单晶加工型CVD装置包括：（a）反应室，包括：（i）基座，具有至少一个气体排出孔，用于将气体经由晶片的背面和周边流入反应室，进入 反应室; （ii）喷头; （iii）位于喷头附近并沿着反应室的内壁圆周设置的排气管道; 和（iv）与排气管道同轴设置的与排气管道的底部形成间隙的圆形分离板; 和（b）用于调节喷头温度的温度控制装置。 分离板具有密封部分，以密封基座的周边，并且当基座上升时将反应室与晶片处理室分开。

公开(公告)号：US06868010B2

公开(公告)日：2005-03-15

申请号：US10370512

申请日：2003-02-24

申请人： Akira Shimizu ,  Riichiro Shirota ,  Fumitaka Arai

发明人： Akira Shimizu ,  Riichiro Shirota ,  Fumitaka Arai

IPC分类号： G11C16/04 ,  G11C11/34 ,  G11C16/02 ,  G11C16/06 ,  G11C16/08 ,  H01L21/8247 ,  H01L27/10 ,  H01L27/105 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792

CPC分类号： G11C16/08 ,  G11C16/0483 ,  H01L27/105 ,  H01L27/115

摘要： A semiconductor memory device includes a first, second, and third memory cell transistors in which information can be electrically rewritten, addresses of which are consecutive in a row direction. One end of a current passage in each of a first, second, and third transfer transistors is connected to a control electrode of the first, second, and third memory cell transistors. A write voltage, a pass voltage lower than the write voltage, and a first voltage lower than the pass voltage are applied to the other ends of the first, second, and third transfer transistors. A first control section applies the first on-voltage to make the first transfer transistor conductive, to a gate of the first transfer transistor. A second control section applies a second on-voltage to make the second and third transfer transistors conductive, to gates of the second and third transfer transistors.

摘要翻译： 半导体存储器件包括第一，第二和第三存储单元晶体管，其中信息可被电重写，其地址在行方向上是连续的。 第一，第二和第三传输晶体管中的每一个中的电流通路的一端连接到第一，第二和第三存储单元晶体管的控制电极。 写入电压，低于写入电压的通过电压以及低于通过电压的第一电压施加到第一，第二和第三转移晶体管的另一端。 第一控制部分将第一传导晶体管导通的第一导通电压施加到第一传输晶体管的栅极。 第二控制部分施加第二导通电压以使第二和第三转移晶体管导通到第二和第三转移晶体管的栅极。