Process of emitting highly spin-polarized electron beam and
semiconductor device therefor
    41.
    发明授权
    Process of emitting highly spin-polarized electron beam and semiconductor device therefor 失效
    发射高自旋极化电子束的工艺及其半导体器件

    公开(公告)号:US5523572A

    公开(公告)日:1996-06-04

    申请号:US410760

    申请日:1995-03-27

    IPC分类号: H01J1/34 H01J3/02 H01J37/00

    摘要: A process of producing a highly spin-polarized electron beam, including the steps of applying a light energy to a semiconductor device comprising a first compound semiconductor layer having a first lattice constant and a second compound semiconductor layer having a second lattice constant different from the first lattice constant, the second semiconductor layer being in junction contact with the first semiconductor layer to provide a strained semiconductor heterostructure, a magnitude of mismatch between the first and second lattice constants defining an energy splitting between a heavy hole band and a light hole band in the second semiconductor layer, such that the energy splitting is greater than a thermal noise energy in the second semiconductor layer in use; and extracting the highly spin-polarized electron beam from the second semiconductor layer upon receiving the light energy. A semiconductor device for emitting, upon receiving a light energy, a highly spin-polarized electron beam, including a first compound semiconductor layer formed of gallium arsenide phosphide, GaAs.sub.1-x P.sub.x, and having a first lattice constant; and a second compound semiconductor layer provided on the first semiconductor layer, the second semiconductor layer having a second lattice constant different from the first lattice constant and a thickness, t, smaller than the thickness of the first semiconductor layer.

    摘要翻译: 一种生产高自旋极化电子束的方法,包括以下步骤:向包括具有第一晶格常数的第一化合物半导体层和具有不同于第一晶格常数的第二晶格常数的第二化合物半导体层的半导体器件施加光能 晶格常数,所述第二半导体层与所述第一半导体层接触接触以提供应变的半导体异质结构,所述第一和第二晶格常数之间的失配量的大小限定了所述第一和第二晶格常数之间的重孔带和所述光孔带之间的能量分裂 第二半导体层,使得能量分裂大于使用中的第二半导体层中的热噪声能量; 以及在接收到光能时从第二半导体层提取高自旋极化的电子束。 一种半导体器件,用于在接收到光能时发射包括由砷化镓磷化物GaAs1-xPx形成的并具有第一晶格常数的第一化合物半导体层的高度自旋极化的电子束; 以及设置在所述第一半导体层上的第二化合物半导体层,所述第二半导体层具有与所述第一晶格常数不同的第二晶格常数和小于所述第一半导体层的厚度的厚度t。

    Rotary structure
    42.
    发明授权
    Rotary structure 失效
    旋转结构

    公开(公告)号:US4934843A

    公开(公告)日:1990-06-19

    申请号:US377727

    申请日:1989-07-10

    申请人: Tsutomu Nakanishi

    发明人: Tsutomu Nakanishi

    摘要: This invention relates to a rotary structure adapted to be used for a spindle unit of a miniature motor or miniature rotor or for a tape guide roller of a VTR or the like. In the structure of the rotary mechanism, instead of the conventional expensive radial ball bearings, recessed step parts are formed in the shaft itself and balls are held by and between the recessed step parts and ball receiving surfaces formed as tapered surfaces surfaces on outer races provided around the periphery of the shaft.

    摘要翻译: 本发明涉及适用于微型电动机或微型转子的主轴单元或VTR等的带导向辊的旋转结构。 在旋转机构的结构中,代替常规的昂贵的径向球轴承,在轴本身中形成凹入的阶梯部,并且球被保持在凹入的台阶部分和在外圈上形成为锥形表面的球接收表面之间, 围绕轴的周边。

    Exit guiding system
    43.
    发明授权
    Exit guiding system 失效
    出口指导系统

    公开(公告)号:US4796018A

    公开(公告)日:1989-01-03

    申请号:US53371

    申请日:1987-05-22

    摘要: An exit guiding system comprising detectors of changes in ambient condition due to a fire, a guiding device positioned near each fire exit or exit access, instruction means controlling operation or non-operation of each guiding device based upon signal levels from said detectors, operation of each guiding device being initiated when any detector outputs a signal indicating a dangerous condition, operation of individual guiding devices being suspended when ambient conditions local to said guiding device are dangerous, except the guiding device continuing operation when local conditions inside a door are dangerous but local conditions outside the same door are acceptable.

    摘要翻译: 一种出口引导系统,包括由于火灾引起的环境状况变化的检测器,位于每个消防出口或出口处附近的引导装置,基于来自所述检测器的信号水平控制每个引导装置的操作或不操作的指令装置, 当任何检测器输出指示危险状况的信号时,每个引导装置被启动,除了引导装置继续操作之外,当在门内的局部状况是危险的但是局部的情况下,引导装置继续操作 同一门外的条件是可以接受的。

    PHYSICAL QUANTITY SENSOR
    45.
    发明申请
    PHYSICAL QUANTITY SENSOR 审中-公开
    物理量传感器

    公开(公告)号:US20120000288A1

    公开(公告)日:2012-01-05

    申请号:US13254298

    申请日:2010-03-08

    IPC分类号: G01N29/12

    CPC分类号: G01L1/183

    摘要: A physical quantity sensor includes a deformable body in which strain occurs in response to a stress applied thereto, a vibrator vibrating with a frequency according to the strain or with an amplitude according to the strain, and a processor processing a signal output from the vibrator. The vibrator is mounted to the deformable body such that the strain transmits to the vibrator. The processor is bonded to the deformable body such that the strain does not substantially transmit to the processor. This physical quantity sensor can stably detects strain and tension acting on an object.

    摘要翻译: 物理量传感器包括响应于施加的应力而发生应变的变形体,根据应变的频率或根据应变的幅度振动的振动器,以及处理从振动器输出的信号的处理器。 振动器安装到变形体上,使得应变传递到振动器。 处理器被结合到可变形体,使得该应变基本上不传送到处理器。 该物理量传感器可以稳定地检测作用在物体上的应变和张力。

    Tuning amplifier
    49.
    发明授权
    Tuning amplifier 失效
    调谐放大器

    公开(公告)号:US6087901A

    公开(公告)日:2000-07-11

    申请号:US142311

    申请日:1998-09-03

    CPC分类号: H03G3/3036 H03F3/1935

    摘要: A tuning amplifier 1 is provided with an oscillation circuit 10 incorporating an amplifier circuit 11 and a feedback circuit 12, an input circuit 14 which inputs signals to the oscillation circuit 10, and an automatic gain control (AGC) circuit 16 which controls the output amplitude of the oscillation circuit 10. When signals are inputted to the oscillation circuit 10 through the input circuit 14, such tuning that only signals having frequencies near the oscillation frequency of the oscillation circuit 10 are allowed to pass through is possible.

    摘要翻译: PCT No.PCT / JP97 / 00761 Sec。 371日期:1998年9月3日 102(e)1998年9月3日PCT PCT 1997年3月11日PCT公布。 公开号WO97 / 34368 日期:1997年9月18日调谐放大器1设置有包括放大器电路11和反馈电路12的振荡电路10,向振荡电路10输入信号的输入电路14以及自动增益控制(AGC)电路16 其控制振荡电路10的输出振幅。当通过输入电路14将信号输入到振荡电路10时,仅允许具有接近振荡电路10的振荡频率的频率的信号的调谐被允许通过。

    Tuning circuit including a plurality of cascade connected tuning
amplifier sections
    50.
    发明授权
    Tuning circuit including a plurality of cascade connected tuning amplifier sections 失效
    调谐电路包括多个级联连接的调谐放大器部分

    公开(公告)号:US6058295A

    公开(公告)日:2000-05-02

    申请号:US860428

    申请日:1997-06-23

    摘要: A tuning circuit which has a wide tuning bandwidth. The tuning bandwidth or the tuning frequency can be easily changed. The tuning circuit 1 is imposed of two cascade-connected tuning amplifier sections 2 and 3. Each of the sections 2 and 3 is provided with cascade-connected phase-shifting circuits 10C and 30C, a non-inverting circuit 50, a voltage dividing circuit 160, and an adding circuit composed of a feedback resistor 70 and an input resistor 74. Prescribed tuning operation is performed by shifting the prescribed frequency 360.degree. by means of the phase shifting circuits 10C and 30C and setting the open loop gain of a feedback loop at less than 1 when the output of the voltage dividing circuit 160 is feedback. The resistance ratio between the feedback resistor 70 and the input resistor 74 of each section 2, 3 is adjusted so that the maximum damping of each section 2, 3 may become smaller and the tuning bandwidth of each section 2, 3 becomes wider. Therefore, since the two tuning amplifier sections are cascade-connected, the maximum damping is increased and the tuning bandwidth is widened as a whole.

    摘要翻译: PCT No.PCT / JP96 / 00027 Sec。 371日期:1997年6月23日 102(e)日期1997年6月23日PCT 1996年1月11日PCT PCT。 公开号WO96 / 21969 日期1996年7月18日具有宽调谐带宽的调谐电路。 调谐带宽或调谐频率可以轻松改变。 调谐电路1由两个级联连接的调谐放大器部分2和3施加。部分2和3中的每一个设置有级联连接的移相电路10C和30C,非反相电路50,分压电路 160,以及由反馈电阻70和输入电阻74组成的加法电路。通过移相电路10C和30C移动规定频率360°进行调谐操作,并设定反馈回路的开环增益 当分压电路160的输出反馈时小于1。 每个部分2,3的反馈电阻器70和输入电阻器74之间的电阻比被调节,使得每个部分2,3的最大阻尼可能变小,并且每个部分2,3的调谐带宽变宽。 因此,由于两个调谐放大器部分级联连接,所以最大阻尼增加,并且调谐带宽整体上扩大。