Liquid Chemical for Forming Protecting Film
    41.
    发明申请
    Liquid Chemical for Forming Protecting Film 有权
    用于形成保护膜的液体化学品

    公开(公告)号:US20120017934A1

    公开(公告)日:2012-01-26

    申请号:US13253127

    申请日:2011-10-05

    IPC分类号: B08B7/00 C09K3/18

    摘要: Disclosed is a liquid chemical for forming a water-repellent protecting film at least on a surface of a recessed portion of an uneven pattern at the time of cleaning a wafer having a finely uneven pattern at its surface and containing silicon at least a part of the uneven pattern. This liquid chemical contains a silicon compound A represented by the general formula: R1aSi(H)bX4-a-b and an acid A, the acid A being at least one selected from the group consisting of trimethylsilyl trifluoroactate, trimethylsilyl trifluoromethanesulfonate, dimethylsilyl trifluoroactate, dimethylsilyl trifluoromethanesulfonate, butyldimethylsilyl trifluoroactate, butyldimethylsilyl trifluoromethanesulfonate, hexyldimethylsilyl trifluoroacetate, hexyldimethylsilyl trifluoromethanesulfonate, octyldimethylsilyl trifluoroactate, octyldimethylsilyl trifluoromethanesulfonate, decyldimethylsilyl trifluoroacetate and decyldimethylsilyl trifluoromethanesulfonate.

    摘要翻译: 公开了一种液体化学品,用于在清洁其表面上具有精细不均匀图案的晶片时至少在凹凸图案的凹部的表面上形成防水保护膜,并且含有硅的至少一部分 图案不均匀 该液体化学品含有由通式R1aSi(H)bX4-ab表示的硅化合物A和酸A,酸A为选自三甲基甲硅烷基三氟甲酸三甲基甲硅烷基酯,三氟甲磺酸三甲基甲硅烷基酯,三氟甲磺酸二甲基甲硅烷基酯,三氟甲磺酸二甲基甲硅烷基酯 丁基二甲基甲硅烷基三氟甲酸酯,丁基二甲基甲硅烷基三氟甲磺酸酯,己基二甲基甲硅烷基三氟乙酸酯,己基二甲基甲硅烷基三氟甲磺酸酯,辛基二甲基甲硅烷基三氟甲酸酯,辛基二甲基甲硅烷基三氟甲磺酸酯,癸基二甲基甲硅烷基三氟乙酸酯和癸基二甲基甲硅烷基三氟甲磺酸酯。

    METHOD OF DRIVING INFORMATION DISPLAY PANEL
    42.
    发明申请
    METHOD OF DRIVING INFORMATION DISPLAY PANEL 审中-公开
    驱动信息显示面板的方法

    公开(公告)号:US20110316842A1

    公开(公告)日:2011-12-29

    申请号:US13139169

    申请日:2009-12-08

    IPC分类号: G09G5/00

    摘要: Provided is a method of driving an information display panel in which at least two types of display media comprised of particle groups containing chargeable particles are sealed between two opposed substrates, at least one substrate being transparent, and a voltage is applied across a pair of opposed pixel electrodes formed by providing conductive films to the respective substrates to move the display media, thereby displaying an information image, wherein, in a series of alternating voltage pulses applied at the time of deleting the information image displayed on the information display panel, there is provided an OFF time, which is a period during which application voltage of 0 volt is maintained during change of polarity of each pulse voltage. With this configuration, it is possible to provide a method of driving an information display panel capable of achieving the longer lifetime of a battery at the time when the panel is driven by the battery and of preventing drop of the voltage from a power supply, by reducing a peak value of the electric current occurring at the time of deleting with the alternating voltage.

    摘要翻译: 提供了一种驱动信息显示面板的方法,其中至少两种由包含可带电粒子的粒子组成的显示介质被密封在两个相对的基板之间,至少一个基板是透明的,并且电压跨越一对相对的基板 通过向各个基板提供导电膜以移动显示介质而形成的像素电极,从而显示信息图像,其中,在删除信息显示面板上显示的信息图像时施加的一系列交流电压脉冲中,存在 提供OFF时间,该时间是在每个脉冲电压的极性改变期间保持0伏的施加电压的时段。 利用这种配置,可以提供一种驱动信息显示面板的方法,该信息显示面板能够在面板被电池驱动时实现电池寿命更长,并且防止来自电源的电压的下降,由 减少在交流电压下删除时发生的电流的峰值。

    Method for Production of Iodine Heptafluoride
    43.
    发明申请
    Method for Production of Iodine Heptafluoride 有权
    碘化七氟化硫的生产方法

    公开(公告)号:US20100196251A1

    公开(公告)日:2010-08-05

    申请号:US12665265

    申请日:2008-05-19

    IPC分类号: C01B7/24

    CPC分类号: C01B7/24

    摘要: [Task] To provide, in an industrial scale production of iodine heptafluoride, a method for producing it easily and continuously, with a single reactor, efficiently and stably by putting iodine and fluorine directly into the reactor.[Solving Means] To provide a method for producing iodine heptafluoride, characterized in that each of a fluorine-containing gas and an iodine-containing gas is supplied to a reactor, in which iodine heptafluoride is previously present, in order to suppress a local reaction when iodine and fluorine as the raw materials are put into the reactor, and the reaction is conducted while circulating and mixing the gas in the reactor.[Selected Drawing] None

    摘要翻译: [任务]为了提供以工业规模生产七氟化碘的方法,通过将碘和氟直接放入反应器中,通过单个反应器容易连续地生产方法。 本发明提供一种生产七氟化碘的方法,其特征在于,向预先存在七氟化碘的反应器中供给含氟气体和含碘气体,以抑制局部反应 当将碘和氟作为原料放入反应器中时,在反应器中循环和混合气体的同时进行反应。 [已选图]无

    Group III nitride-based compound semiconductor light-emitting device and method for producing the same
    44.
    发明授权
    Group III nitride-based compound semiconductor light-emitting device and method for producing the same 有权
    III族氮化物系化合物半导体发光元件及其制造方法

    公开(公告)号:US07629619B2

    公开(公告)日:2009-12-08

    申请号:US11340746

    申请日:2006-01-27

    IPC分类号: H01L33/00

    CPC分类号: H01L33/32 B82Y20/00 H01L33/06

    摘要: A Group III nitride-based compound semiconductor light-emitting device having a quantum well structure, includes a well layer, a first layer formed on one surface of the well layer, a second layer formed on the other surface of the well layer, a first region provided in the vicinity of the interface between the first layer and the well layer, and a second region provided in the vicinity of the interface between the second layer and the well layer. A composition of the first and second regions gradually changes such that the lattice constants of the first and second layers approach the lattice constant of the well layer as a position approaches said well layer.

    摘要翻译: 具有量子阱结构的III族氮化物系化合物半导体发光元件具有阱层,在阱层的一个面上形成的第一层,在阱层的另一面形成的第二层,第一层 区域,设置在第一层和阱层之间的界面附近,以及设置在第二层和阱层之间的界面附近的第二区域。 第一和第二区域的组成逐渐变化,使得当位置接近所述阱层时,第一层和第二层的晶格常数接近阱层的晶格常数。

    Alignment film, method for fabricating the alignment film, liquid crystal device, and projection type display device
    46.
    发明授权
    Alignment film, method for fabricating the alignment film, liquid crystal device, and projection type display device 有权
    取向膜,取向膜的制造方法,液晶装置和投影型显示装置

    公开(公告)号:US06844905B2

    公开(公告)日:2005-01-18

    申请号:US10305985

    申请日:2002-11-29

    IPC分类号: G02F1/13 G02F1/1337

    摘要: The invention provides an alignment film that is provided with a high alignment control force to a target molecule and less likely to cause problems to an element during the formation of the alignment film. An alignment film has a configuration in which, on a first alignment layer, a second alignment film layer that is uniform in the in-plane anisotropy more than the first alignment film thereof and aligned along surface alignment of the first alignment film. The first alignment film layer can be formed of, for instance, a polyimide film whose rubbing density is 200 or less, and the second alignment film layer can be formed by use of an ion deposition method with an acryl monomers as a deposition material. A liquid crystal device provided with the alignment film like this becomes higher in the alignment control force to a liquid crystal.

    摘要翻译: 本发明提供了一种对准膜,其向目标分子提供高取向控制力,并且在形成取向膜期间不易引起元件问题。 取向膜具有这样的结构,其中在第一取向层上具有比其第一取向膜大的面内各向异性均匀且与第一取向膜的表面取向对准的第二取向膜层。 第一取向膜层可以由例如摩擦密度为200以下的聚酰亚胺膜形成,第二取向膜层可以使用以丙烯酸类单体作为沉积材料的离子沉积法形成。 设置有这样的取向膜的液晶装置在对液晶的取向控制力中变得更高。

    Chemical for Forming Protective Film
    47.
    发明申请
    Chemical for Forming Protective Film 有权
    化学成型保护膜

    公开(公告)号:US20130056023A1

    公开(公告)日:2013-03-07

    申请号:US13698244

    申请日:2011-05-11

    IPC分类号: C09K3/18 B08B3/10

    摘要: Disclosed is a liquid chemical for forming a water repellent protective film on a wafer that has at its surface a finely uneven pattern and contains silicon element at least at a part of the uneven pattern, the water repellent protective film being formed at least on surfaces of recessed portions of the uneven pattern at the time of cleaning the wafer. The liquid chemical contains: a silicon compound (A) represented by the general formula R1aSi(H)b(X)4−a−b and an acid; or a silicon compound (C) represented by the general formula R7gSi(H)h(CH3)w(Z)4−g−h−w and a base that contains no more than 35 mass % of water. The total amount of water in the liquid chemical is no greater than 1000 mass ppm relative to the total amount of the liquid chemical. The liquid chemical can improve a cleaning step that easily induces pattern collapse.

    摘要翻译: 公开了一种用于在晶片上形成疏水性保护膜的液体化学品,其表面具有精细不均匀的图案,并且至少在不均匀图案的一部分处含有硅元素,所述防水保护膜至少形成在 在清洁晶片时凹凸图案的凹陷部分。 液体化学品包含:由通式R 1a a(H)b(X)4-a-b表示的硅化合物(A)和酸; 或由通式R7gSi(H)h(CH3)w(Z)4-g-h-w表示的硅化合物(C)和含有不超过35质量%的水的碱。 液体化学品中的水的总量相对于液体化学品的总量不超过1000质量ppm。 液体化学品可以改善易于引起图案塌陷的清洁步骤。

    Hafnium Amide Complex Manufacturing Method and Hafnium-Containing Oxide Film
    49.
    发明申请
    Hafnium Amide Complex Manufacturing Method and Hafnium-Containing Oxide Film 有权
    铪酰胺复合物制造方法和含铪氧化物膜

    公开(公告)号:US20110230671A1

    公开(公告)日:2011-09-22

    申请号:US13129490

    申请日:2009-11-11

    IPC分类号: C07F7/00

    摘要: Disclosed is a method of producing a hafnium amide complex represented by general formula: Hf(NR4R5)4, characterized by comprising: carrying out a reduced-pressure distillation after a lithium alkylamide represented by general formula: Li(NR4R5) is added to and allowed to react with a tertiary hafnium alkoxide complex represented by general formula: Hf[O(CR1R2R3)]4. (In the formulas, R1, R2 and R3 independently represent either a phenyl group, a benzyl group, or a primary, secondary or tertiary alkyl group having a carbon number 1-6; and R4 and R5 independently represent either a methyl group or an ethyl group; however, a case where all of R1, R2 and R3 are methyl groups, and a case where one of R1, R2 and R3 is an ethyl group and the other two are methyl groups are excluded.)

    摘要翻译: 公开了一种制备由通式Hf(NR4R5)4表示的铪酰胺络合物的方法,其特征在于包括:在通式为Li(NR4R5)表示的烷基胺锂加入并允许后,进行减压蒸馏 与通式为Hf [O(CR 1 R 2 R 3)] 4表示的叔铪醇盐络合物反应。 (式中,R 1,R 2,R 3独立地表示苯基,苄基或碳原子数为1〜6的伯,仲或叔烷基,R 4和R 5分别独立地表示甲基或 乙基,但R1,R2,R3全部为甲基,R1,R2,R3中的一个为乙基,另外两个为甲基的情况除外)

    Method for production of iodine heptafluoride
    50.
    发明授权
    Method for production of iodine heptafluoride 有权
    七氟化碘生产方法

    公开(公告)号:US07976817B2

    公开(公告)日:2011-07-12

    申请号:US12665265

    申请日:2008-05-19

    IPC分类号: C01B7/24

    CPC分类号: C01B7/24

    摘要: To provide, in an industrial scale production of iodine heptafluoride, a method for producing it easily and continuously, with a single reactor, efficiently and stably by putting iodine and fluorine directly into the reactor. To provide a method for producing iodine heptafluoride, characterized in that each of a fluorine-containing gas and an iodine-containing gas is supplied to a reactor, in which iodine heptafluoride is previously present, in order to suppress a local reaction when iodine and fluorine as the raw materials are put into the reactor, and the reaction is conducted while circulating and mixing the gas in the reactor.

    摘要翻译: 为了以工业规模生产七氟化碘,通过将碘和氟直接放入反应器中,通过单个反应器有效和稳定地提供容易连续生产的方法。 提供一种生产七氟化碘的方法,其特征在于,将含有氟的含氟气体和含碘气体分别供给到预先存在七氟化氢的反应器中,以便当碘和氟 因为原料放入反应器中,并且在反应器中循环和混合气体的同时进行反应。