摘要:
Disclosed is a liquid chemical for forming a water-repellent protecting film at least on a surface of a recessed portion of an uneven pattern at the time of cleaning a wafer having a finely uneven pattern at its surface and containing silicon at least a part of the uneven pattern. This liquid chemical contains a silicon compound A represented by the general formula: R1aSi(H)bX4-a-b and an acid A, the acid A being at least one selected from the group consisting of trimethylsilyl trifluoroactate, trimethylsilyl trifluoromethanesulfonate, dimethylsilyl trifluoroactate, dimethylsilyl trifluoromethanesulfonate, butyldimethylsilyl trifluoroactate, butyldimethylsilyl trifluoromethanesulfonate, hexyldimethylsilyl trifluoroacetate, hexyldimethylsilyl trifluoromethanesulfonate, octyldimethylsilyl trifluoroactate, octyldimethylsilyl trifluoromethanesulfonate, decyldimethylsilyl trifluoroacetate and decyldimethylsilyl trifluoromethanesulfonate.
摘要:
Provided is a method of driving an information display panel in which at least two types of display media comprised of particle groups containing chargeable particles are sealed between two opposed substrates, at least one substrate being transparent, and a voltage is applied across a pair of opposed pixel electrodes formed by providing conductive films to the respective substrates to move the display media, thereby displaying an information image, wherein, in a series of alternating voltage pulses applied at the time of deleting the information image displayed on the information display panel, there is provided an OFF time, which is a period during which application voltage of 0 volt is maintained during change of polarity of each pulse voltage. With this configuration, it is possible to provide a method of driving an information display panel capable of achieving the longer lifetime of a battery at the time when the panel is driven by the battery and of preventing drop of the voltage from a power supply, by reducing a peak value of the electric current occurring at the time of deleting with the alternating voltage.
摘要:
[Task] To provide, in an industrial scale production of iodine heptafluoride, a method for producing it easily and continuously, with a single reactor, efficiently and stably by putting iodine and fluorine directly into the reactor.[Solving Means] To provide a method for producing iodine heptafluoride, characterized in that each of a fluorine-containing gas and an iodine-containing gas is supplied to a reactor, in which iodine heptafluoride is previously present, in order to suppress a local reaction when iodine and fluorine as the raw materials are put into the reactor, and the reaction is conducted while circulating and mixing the gas in the reactor.[Selected Drawing] None
摘要:
A Group III nitride-based compound semiconductor light-emitting device having a quantum well structure, includes a well layer, a first layer formed on one surface of the well layer, a second layer formed on the other surface of the well layer, a first region provided in the vicinity of the interface between the first layer and the well layer, and a second region provided in the vicinity of the interface between the second layer and the well layer. A composition of the first and second regions gradually changes such that the lattice constants of the first and second layers approach the lattice constant of the well layer as a position approaches said well layer.
摘要:
A light source unit is provided that is adapted for efficient cooling and for illumination of high luminance, and a projector including the same. A light source unit including a solid-state light source and a lens further includes a first fluid flowing in the vicinity of the solid-state light source thereby absorbing heat generated from the solid-state light source, and a second fluid flowing in the vicinity of the first fluid thereby absorbing the heat contained in the first fluid.
摘要:
The invention provides an alignment film that is provided with a high alignment control force to a target molecule and less likely to cause problems to an element during the formation of the alignment film. An alignment film has a configuration in which, on a first alignment layer, a second alignment film layer that is uniform in the in-plane anisotropy more than the first alignment film thereof and aligned along surface alignment of the first alignment film. The first alignment film layer can be formed of, for instance, a polyimide film whose rubbing density is 200 or less, and the second alignment film layer can be formed by use of an ion deposition method with an acryl monomers as a deposition material. A liquid crystal device provided with the alignment film like this becomes higher in the alignment control force to a liquid crystal.
摘要:
Disclosed is a liquid chemical for forming a water repellent protective film on a wafer that has at its surface a finely uneven pattern and contains silicon element at least at a part of the uneven pattern, the water repellent protective film being formed at least on surfaces of recessed portions of the uneven pattern at the time of cleaning the wafer. The liquid chemical contains: a silicon compound (A) represented by the general formula R1aSi(H)b(X)4−a−b and an acid; or a silicon compound (C) represented by the general formula R7gSi(H)h(CH3)w(Z)4−g−h−w and a base that contains no more than 35 mass % of water. The total amount of water in the liquid chemical is no greater than 1000 mass ppm relative to the total amount of the liquid chemical. The liquid chemical can improve a cleaning step that easily induces pattern collapse.
摘要:
An electrooptic device includes two adjacent pixel electrodes. A potential that is different from the potential of the first and second pixel electrodes is applied to an area between the adjacent pixel electrodes.
摘要:
Disclosed is a method of producing a hafnium amide complex represented by general formula: Hf(NR4R5)4, characterized by comprising: carrying out a reduced-pressure distillation after a lithium alkylamide represented by general formula: Li(NR4R5) is added to and allowed to react with a tertiary hafnium alkoxide complex represented by general formula: Hf[O(CR1R2R3)]4. (In the formulas, R1, R2 and R3 independently represent either a phenyl group, a benzyl group, or a primary, secondary or tertiary alkyl group having a carbon number 1-6; and R4 and R5 independently represent either a methyl group or an ethyl group; however, a case where all of R1, R2 and R3 are methyl groups, and a case where one of R1, R2 and R3 is an ethyl group and the other two are methyl groups are excluded.)
摘要翻译:公开了一种制备由通式Hf(NR4R5)4表示的铪酰胺络合物的方法,其特征在于包括:在通式为Li(NR4R5)表示的烷基胺锂加入并允许后,进行减压蒸馏 与通式为Hf [O(CR 1 R 2 R 3)] 4表示的叔铪醇盐络合物反应。 (式中,R 1,R 2,R 3独立地表示苯基,苄基或碳原子数为1〜6的伯,仲或叔烷基,R 4和R 5分别独立地表示甲基或 乙基,但R1,R2,R3全部为甲基,R1,R2,R3中的一个为乙基,另外两个为甲基的情况除外)
摘要:
To provide, in an industrial scale production of iodine heptafluoride, a method for producing it easily and continuously, with a single reactor, efficiently and stably by putting iodine and fluorine directly into the reactor. To provide a method for producing iodine heptafluoride, characterized in that each of a fluorine-containing gas and an iodine-containing gas is supplied to a reactor, in which iodine heptafluoride is previously present, in order to suppress a local reaction when iodine and fluorine as the raw materials are put into the reactor, and the reaction is conducted while circulating and mixing the gas in the reactor.