公开(公告)号：US07776763B2

公开(公告)日：2010-08-17

申请号：US11745278

申请日：2007-05-07

申请人： Kimberly G. Reid ,  Anthony Dip

发明人： Kimberly G. Reid ,  Anthony Dip

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： C23C16/303 ,  C23C16/56

摘要： A method is provided for in-situ formation of a thin oxidized AlN film on a substrate. The method includes providing the substrate in a process chamber, depositing an AlN film on the substrate, and post-treating the AlN film with exposure to a nitrogen and oxygen-containing gas. The post-treating increases the dielectric constant of the AlN film with substantially no increase in the AlN film thickness. The method can also include pre-treating the substrate prior to AlN deposition, post-annealing the AlN film before or after the post-treatment, or both.

摘要翻译： 提供了一种在衬底上原位形成薄的氧化AlN膜的方法。 该方法包括在处理室中提供衬底，在衬底上沉积AlN膜，以及暴露于含氮和含氧气体后对AlN膜进行后处理。 后处理增加了AlN膜的介电常数，而AlN膜厚度基本上没有增加。 该方法还可以包括在AlN沉积之前预处理衬底，在后处理之前或之后对AlN膜进行后退火，或者两者。

公开(公告)号：US20090324826A1

公开(公告)日：2009-12-31

申请号：US12147707

申请日：2008-06-27

申请人： Hitoshi Kato ,  Manabu Honma ,  Anthony Dip

发明人： Hitoshi Kato ,  Manabu Honma ,  Anthony Dip

IPC分类号： C23C16/455 ,  C23C16/00

CPC分类号： C23C16/45551 ,  C23C16/402

摘要： A disclosed film deposition apparatus includes a turntable having in one surface a substrate receiving portion along a turntable rotation direction; a first reaction gas supplying portion for supplying a first reaction gas; a second reaction gas supplying portion for supplying a second reaction gas; a separation area between a first process area where the first reaction gas is supplied and a second process area where the second reaction gas is supplied, the separation area including a separation gas supplying portion for supplying a first separation gas in the separation area, and a ceiling surface opposing the one surface to produce a thin space; a center area having an ejection hole for ejecting a second separation gas along the one surface; and an evacuation opening for evacuating the chamber.

摘要翻译： 公开的薄膜沉积设备包括：转台，其在一个表面上具有沿转盘旋转方向的基板接收部分; 用于供给第一反应气体的第一反应气体供给部; 用于供给第二反应气体的第二反应气体供给部; 在供给第一反应气体的第一处理区域和供给第二反应气体的第二处理区域之间的分离区域，分离区域包括用于在分离区域中供给第一分离气体的分离气体供给部，以及分离区域 天花板表面相对于一个表面产生薄的空间; 具有用于沿着所述一个表面喷射第二分离气体的喷射孔的中心区域; 以及用于抽空室的排气口。

公开(公告)号：US20090088000A1

公开(公告)日：2009-04-02

申请号：US11865060

申请日：2007-09-30

申请人： Kimberly G. Reid ,  Anthony Dip

发明人： Kimberly G. Reid ,  Anthony Dip

IPC分类号： H01L21/469

CPC分类号： H01L21/3145 ,  C23C8/34 ,  H01L21/28202 ,  H01L29/518

摘要： A method for growing an oxynitride film on a substrate includes positioning the substrate in a process chamber, heating the process chamber, flowing a first wet process gas comprising water vapor into the process chamber, and reacting the substrate with the first wet process gas to grow an oxide film on the substrate. The method further includes flowing a second wet process gas comprising water vapor and a nitriding gas comprising nitric oxide into the process chamber, and reacting the oxide film and the substrate with the second wet process gas to grow an oxynitride film. In another embodiment, the method further comprises annealing the substrate containing the oxynitride film in an annealing gas. According to one embodiment of the method where the substrate is silicon, a silicon oxynitride film can be formed that exhibits a nitrogen peak concentration of approximately 3 atomic % or greater.

摘要翻译： 在衬底上生长氮氧化物膜的方法包括将衬底定位在处理室中，加热处理室，将包含水蒸气的第一湿法工艺气体流入处理室，以及使衬底与第一湿法工艺气体反应生长 在基板上的氧化物膜。 所述方法还包括将包含水蒸气的第二湿法工艺气体和包含一氧化氮的氮化气体流入所述处理室，以及使所述氧化物膜和所述衬底与所述第二湿法工艺气体反应以生长氧氮化物膜。 在另一个实施方案中，该方法还包括在退火气体中退火含有氧氮化物膜的基材。 根据基板是硅的方法的一个实施例，可以形成显示大约3原子％以上的氮峰浓度的氮氧化硅膜。

公开(公告)号：US20090035463A1

公开(公告)日：2009-02-05

申请号：US11833754

申请日：2007-08-03

申请人： Anthony Dip

发明人： Anthony Dip

IPC分类号： C23C16/452 ,  C23C16/455

CPC分类号： H01L21/67109 ,  H01L21/67098

摘要： Thermal processing system and method for forming an oxide layer on substrates. The thermal processing system has a gas injector with first and second fluid lumens confining first and second process gases, such an molecular hydrogen and molecular oxygen, from each other and another fluid lumen that receives the process gases from the first and second fluid lumens. The first and second process gases combine and react in this fluid lumen to form a reaction product. The reaction product is injected from this fluid lumen into a process chamber of the thermal processing system, where substrates are exposed to the reaction product resulting in formation of an oxide layer.

摘要翻译： 热处理系统和在基片上形成氧化物层的方法。 热处理系统具有气体注射器，其具有第一和第二流体流明，其将第一和第二处理气体（例如分子氢和分子氧）彼此限制，另一个流体腔从第一和第二流体流体接收处理气体。 第一和第二工艺气体在该流体腔中结合并反应以形成反应产物。 将反应产物从该流体腔注射到热处理系统的处理室中，其中基板暴露于反应产物，从而形成氧化物层。

公开(公告)号：US07468311B2

公开(公告)日：2008-12-23

申请号：US10673375

申请日：2003-09-30

申请人： Anthony Dip ,  Seungho Oh ,  Allen John Leith

发明人： Anthony Dip ,  Seungho Oh ,  Allen John Leith

IPC分类号： H01L21/20

CPC分类号： C30B25/02 ,  C23C16/24 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02639

摘要： A method is provided for depositing a silicon-containing film on a substrate by a low pressure deposition process in a processing system. A silicon-containing film can be formed on a substrate by providing a substrate in a process chamber of a processing system, heating the substrate, and exposing a hexachlorodisilane (HCD) process gas to the substrate. The method can selectively deposit an epitaxial silicon-containing film on a silicon surface of a substrate or, alternately, non-selectively deposit a silicon-containing film on a substrate. A processing tool containing a processing system for forming a silicon-containing film on s substrate using a HCD process gas is provided.

摘要翻译： 提供了一种用于在处理系统中通过低压沉积工艺在衬底上沉积含硅膜的方法。 通过在处理系统的处理室中提供衬底，加热衬底并将六氯二硅烷（HCD）工艺气体暴露于衬底，可以在衬底上形成含硅膜。 该方法可以在衬底的硅表面上选择性地沉积外延含硅膜，或者在衬底上非选择性地沉积含硅膜。 提供了一种包含用于使用HCD工艺气体在衬底上形成含硅膜的处理系统的处理工具。

公开(公告)号：US20070238313A1

公开(公告)日：2007-10-11

申请号：US11278054

申请日：2006-03-30

申请人： Anthony Dip

发明人： Anthony Dip

IPC分类号： H01L21/31

CPC分类号： H01L21/3143 ,  H01L21/0223 ,  H01L21/02233 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/28202 ,  H01L21/3144 ,  H01L21/31658 ,  H01L21/31662

摘要： A method for performing an oxidation process on a plurality of substrates in a batch processing system. According to one embodiment, the method includes selecting a N2O-based oxidation process for the substrates including a first process gas containing N2O that thermally decomposes in a process chamber of the batch processing system to N2, O2, and NO byproducts, and generating a replacement NO-based oxidation process for the substrates including a second process gas containing N2, O2, and NO with molar concentrations that mimic that of the N2, O2, and NO byproducts in the N2O-based oxidation process. According to another embodiment of the invention, the NO-based oxidation process contains NO, O2, and an inert gas.

摘要翻译： 一种在批处理系统中对多个基板进行氧化处理的方法。 根据一个实施方案，该方法包括选择用于基材的基于N 2 O的氧化方法，其包括在处理室中热分解的含有N 2 O 2的第一工艺气体 的批次处理系统转移到N 2 O 2 O 2和NO副产物，并且为包括含有N 2的第二工艺气体的衬底产生替代的NO基氧化工艺， O 2，O 2，和NO，其摩尔浓度模拟N 2，O 2 N和NO的摩尔浓度 在N 2 O基氧化方法中的副产物。 根据本发明的另一个实施方案，基于NO的氧化方法包含NO，O 2 H 2和惰性气体。

公开(公告)号：US20060160288A1

公开(公告)日：2006-07-20

申请号：US11035730

申请日：2005-01-18

申请人： Allen Leith ,  Anthony Dip ,  Seungho Oh

发明人： Allen Leith ,  Anthony Dip ,  Seungho Oh

IPC分类号： H01L21/8234

CPC分类号： H01L21/32055 ,  C23C16/045 ,  C23C16/24 ,  H01L21/76877

摘要： A method is provided for depositing a silicon-containing film in a micro-feature on a substrate by a low pressure deposition process in a processing system. A silicon-containing film can be formed in a micro-feature by providing a substrate in a process chamber of a processing system, and exposing a hexachlorodisilane (HCD) process gas to the substrate. A processing tool containing a processing system for forming a silicon-containing film in a micro-feature using a silicon and chlorine-containing gas such as a HCD process gas is provided. Alternatively, the micro-feature can be exposed to DCS, SiCl4, and SiHCl3 gases. Alternatively, the micro-feature can be exposed to (SiH4+HCl).

摘要翻译： 提供了一种用于在处理系统中通过低压沉积工艺在衬底上的微特征中沉积含硅膜的方法。 通过在处理系统的处理室中提供衬底，并将六氯二硅烷（HCD）工艺气体暴露于衬底，可以在微特征中形成含硅膜。 提供了一种包含用于使用诸如HCD处理气体的含硅气体和含氯气体在微特征中形成含硅膜的处理系统的处理工具。 或者，微特征可以暴露于DCS，SiCl 4和SiHCl 3气体。 或者，微特征可以暴露于（SiH 4+ + HCl）。

公开(公告)号：US20050056219A1

公开(公告)日：2005-03-17

申请号：US10662522

申请日：2003-09-16

申请人： Anthony Dip ,  Michael Toeller ,  Kimberly Reid

发明人： Anthony Dip ,  Michael Toeller ,  Kimberly Reid

IPC分类号： C23C16/00 ,  C23C16/30 ,  C23C16/40 ,  H01L20060101

CPC分类号： C23C16/45531 ,  C23C16/308 ,  C23C16/401 ,  C23C16/405 ,  C23C16/45546

摘要： A method is provided for forming a metal-containing film on a substrate by a sequential gas exposure process in a batch type processing system. A metal-containing film can be formed on a substrate by providing a substrate in a process chamber of a batch type processing system, heating the substrate, sequentially flowing a pulse of a metal-containing precursor gas and a pulse of a reactant gas in the process chamber, and repeating the flowing processes until a metal-containing film with desired film properties is formed on the substrate. The method can form a metal-oxide film, for example HfO2 and ZrO2, a metal-oxynitride film, for example HfxOzNw, and HfxOzNw, a metal-silicate film, for example HfxSiyOz and ZrxSiyOz, and a nitrogen-containing metal-silicate film, for example HfxSiyOzNw and ZrxSiyOzNw. A processing tool containing a batch type processing system for forming a metal-containing film by a sequential gas exposure process is provided.

摘要翻译： 提供了一种通过在间歇式处理系统中通过连续气体曝光工艺在基板上形成含金属膜的方法。 通过在间歇式处理系统的处理室中设置基板，在衬底上形成含金属膜，加热衬底，顺序地将含金属的前体气体的脉冲和反应气体的脉冲流入 并且重复流动过程，直到在基底上形成具有所需膜特性的含金属膜。 该方法可以形成金属氧化物膜，例如HfO 2和ZrO 2，金属 - 氮氧化物膜，例如Hf x O z N w和Hf x O z N w，金属硅酸盐膜，例如Hf x Sb y O z和Zr x S y O z，以及含氮金属硅酸盐膜 ，例如HfxSiyOzNw和ZrxSiyOzNw。 提供了一种包含用于通过连续气体曝光工艺形成含金属膜的间歇式处理系统的加工工具。

公开(公告)号：US08673725B2

公开(公告)日：2014-03-18

申请号：US12751926

申请日：2010-03-31

申请人： David L. O'Meara ,  Anthony Dip ,  Aelan Mosden ,  Pao-Hwa Chou ,  Richard A Conti

发明人： David L. O'Meara ,  Anthony Dip ,  Aelan Mosden ,  Pao-Hwa Chou ,  Richard A Conti

IPC分类号： H01L29/78

CPC分类号： H01L21/28247 ,  H01L29/6656

摘要： A semiconducting device with a multilayer sidewall spacer and method of forming are described. In one embodiment, the method includes providing a substrate containing a patterned structure on a surface of the substrate and depositing a first spacer layer over the patterned structure at a first substrate temperature, where the first spacer layer contains a first material. The method further includes depositing a second spacer layer over the patterned substrate at a second substrate temperature that is different from the first substrate temperature, where the first and second materials contain the same chemical elements, and the depositing steps are performed in any order. The first and second spacer layers are then etched to form the multilayer sidewall spacer on the patterned structure.

摘要翻译： 描述了具有多层侧壁间隔件和形成方法的半导体器件。 在一个实施例中，该方法包括在衬底的表面上提供含有图案化结构的衬底，并且在第一衬底温度下在第一衬底温度下沉积在图案化结构上的第一间隔层，其中第一间隔层包含第一材料。 该方法还包括在不同于第一衬底温度的第二衬底温度下在图案化衬底上沉积第二间隔层，其中第一和第二材料含有相同的化学元素，并且沉积步骤以任何顺序进行。 然后蚀刻第一和第二间隔层以在图案化结构上形成多层侧壁间隔物。

公开(公告)号：US08466045B2

公开(公告)日：2013-06-18

申请号：US12830210

申请日：2010-07-02

申请人： John Gumpher ,  Seungho Oh ,  Anthony Dip

发明人： John Gumpher ,  Seungho Oh ,  Anthony Dip

IPC分类号： H01L21/20

CPC分类号： H01L21/02661 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/02664

摘要： A method for forming strained epitaxial carbon-doped silicon (Si) films, for example as raised source and drain regions for electronic devices. The method includes providing a structure having an epitaxial Si surface and a patterned film, non-selectively depositing a carbon-doped Si film onto the structure, the carbon-doped Si film containing an epitaxial carbon-doped Si film deposited onto the epitaxial Si surface and a non-epitaxial carbon-doped Si film deposited onto the patterned film, and non-selectively depositing a Si film on the carbon-doped Si film, the Si film containing an epitaxial Si film deposited onto the epitaxial carbon-doped Si film and a non-epitaxial Si film deposited onto the non-epitaxial carbon-doped Si film. The method further includes dry etching away the non-epitaxial Si film, the non-epitaxial carbon-doped Si film, and less than the entire epitaxial Si film to form a strained epitaxial carbon-doped Si film on the epitaxial Si surface.

摘要翻译： 用于形成应变外延碳掺杂硅（Si）膜的方法，例如用于电子器件的升高的源极和漏极区域。 该方法包括提供具有外延Si表面和图案化膜的结构，在结构上非选择性地沉积掺杂碳的Si膜，所述掺杂碳的Si膜含有沉积到外延Si表面上的外延碳掺杂的Si膜 以及沉积到图案化膜上的非外延碳掺杂Si膜，并且在掺碳的Si膜上非选择性地沉积Si膜，所述Si膜含有沉积到外延碳掺杂的Si膜上的外延Si膜，以及 沉积在非外延碳掺杂Si膜上的非外延Si膜。 该方法还包括干蚀刻去除非外延Si膜，非外延碳掺杂Si膜，并且小于整个外延Si膜以在外延Si表面上形成应变外延碳掺杂Si膜。