公开(公告)号：US20220254900A1

公开(公告)日：2022-08-11

申请号：US17667036

申请日：2022-02-08

申请人： Applied Materials, Inc.

发明人： Yong Yang ,  Srinivas Gandikota ,  Steven C.H. Hung ,  Mandyam Sriram ,  Jacqueline S. Wrench ,  Yixiong Yang

IPC分类号： H01L29/51 ,  H01L29/78 ,  H01L29/40 ,  H01L29/66

摘要： A metal gate stack on a substrate comprises: an interfacial layer on the substrate; a high-κ metal oxide layer on the interfacial layer, the high-κ metal oxide layer comprising a dipole region adjacent to the interfacial layer, the dipole region comprising niobium (Nb); a high-κ metal oxide capping layer on the high-κ metal oxide layer; a positive metal-oxide-semiconductor (PMOS) work function material above the high-κ metal oxide capping layer; and a gate electrode above the PMOS work function material. The dipole region is formed by driving Nb species of a Nb-based film into the high-κ metal oxide layer to form a dipole region.

公开(公告)号：US20220254640A1

公开(公告)日：2022-08-11

申请号：US17347786

申请日：2021-06-15

申请人： Applied Materials, Inc.

发明人： Yong Yang ,  Jacqueline S. Wrench ,  Yixiong Yang ,  Jianqiu Guo ,  Seshadri Ganguli ,  Steven C.H. Hung ,  Srinivas Gandikota

IPC分类号： H01L21/28 ,  H01L29/51 ,  H01L29/66 ,  H01L29/49

摘要： A sacrificial sealing layer is formed on a high-K metal gate (HKMG) stack to suppress oxidants, e.g., oxygen and water, from impacting the metal gate stack, thus preserving the device EOT. The method integrated processes that include forming an interfacial layer on the substrate; forming a high-K metal oxide layer on the interfacial layer, the high-K metal oxide layer comprising a dipole region adjacent to the interfacial layer, the dipole region; depositing a capping layer on the high-K metal oxide layer; and forming a sacrificial sealing layer on the capping layer. The dipole region is formed by driving a dopant species, e.g., zinc (Zn), vanadium (V), tungsten (W), molybdenum (Mo), ruthenium (Ru), titanium (Ti), tantalum (Ta), zirconium (Zr), aluminum (Al), niobium (Nb), or mixtures thereof, of a dipole film into the high-K metal oxide layer to form a dipole region.

公开(公告)号：US20220077298A1

公开(公告)日：2022-03-10

申请号：US17013161

申请日：2020-09-04

申请人： Applied Materials, Inc.

发明人： SRINIVAS GANDIKOTA ,  Steven C. H. Hung ,  Mandyam Sriram ,  Jacqueline S. Wrench ,  Yixiong Yang ,  Yong Yang

IPC分类号： H01L29/49 ,  H01L29/51 ,  H01L29/40

摘要： Metal gate stacks and integrated methods of forming metal gate stacks are disclosed. Some embodiments comprise NbN as a PMOS work function material at a thickness in a range of greater than or equal to 5 Å to less than or equal to 50 Å. The PMOS work function material comprising NbN has an effective work function of greater than or equal to 4.75 eV. Some embodiments comprise HfO2 as a high-κ metal oxide layer. Some embodiments provide improved PMOS bandedge performance evidenced by improved flatband voltage. Some embodiments exclude transition metal niobium nitride materials as work function materials.

公开(公告)号：US11245022B2

公开(公告)日：2022-02-08

申请号：US16876276

申请日：2020-05-18

申请人： Applied Materials, Inc.

发明人： Yongjing Lin ,  Karla M. Bernal Ramos ,  Luping Li ,  Shih Chung Chen ,  Jacqueline S. Wrench ,  Yixiong Yang ,  Steven C. H. Hung ,  Srinivas Gandikota ,  Naomi Yoshida ,  Lin Dong

IPC分类号： H01L29/51 ,  H01L29/40 ,  H01L29/49

摘要： Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-κ dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium lanthanum nitride (TiLaN), titanium yttrium nitride (TiYN), titanium strontium nitride (TiSrN), titanium magnesium nitride (TiMgN, titanium aluminum nitride (TiAlN), titanium tantalum nitride (TiTaN), hafnium carbide (HfC), hafnium nitride (HfN), hafnium oxynitride (HfON), hafnium oxycarbide (HfOC), hafnium carbide aluminum (HfCAl), hafnium aluminum nitride (HfAlN), or hafnium carbonitride (HfCN).

公开(公告)号：US20200063263A1

公开(公告)日：2020-02-27

申请号：US16549756

申请日：2019-08-23

申请人： Applied Materials, Inc.

发明人： Yixiong Yang ,  Wei V. Tang ,  Seshadri Ganguli ,  Sang Ho Yu ,  Feng Q. Liu ,  Jeffrey W. Anthis ,  David Thompson ,  Jacqueline S. Wrench ,  Naomi Yoshida

IPC分类号： C23C16/455 ,  C23C16/18 ,  H01L21/285 ,  H01L23/532

摘要： Methods of depositing platinum group metal films of high purity, low resistivity, and good conformality are described. A platinum group metal film is formed in the absence of an oxidant. The platinum group metal film is selectively deposited on a conductive substrate at a temperature less than 200° C. by using an organic platinum group metal precursor.

公开(公告)号：US20180350826A1

公开(公告)日：2018-12-06

申请号：US15995693

申请日：2018-06-01

申请人： Applied Materials, Inc.

发明人： Jacqueline S. Wrench ,  Jing Zhou ,  Fuqun Grace Vasiknanonte ,  Jiang Lu ,  Paul F. Ma ,  Nobuyuki Sasaki ,  Sree Rangasai V. Kesapragada ,  Sang Ho Yu ,  Mei Chang

IPC分类号： H01L27/11551 ,  H01L27/11578 ,  H01L21/822 ,  H01L21/8229 ,  H01L21/8239 ,  H01L21/285

摘要： Embodiments of the invention provide methods of processing a substrate having a stack of spaced oxide layers with gaps between the oxide layers. A metallic nucleation layer is formed in the gaps and a cobalt film is deposited on the nucleation layer to form wordlines.