公开(公告)号：US20140273515A1

公开(公告)日：2014-09-18

申请号：US14211156

申请日：2014-03-14

Applicant: Applied Materials, Inc.

Inventor： AVGERINOS V. GELATOS ,  SRINIVAS GANDIKOTA ,  SESHADRI GANGULI ,  XINYU FU ,  BO ZHENG ,  YU LEI

IPC: H01L21/67 ,  H01L21/285

CPC classification number: H01L21/6723 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/285 ,  H01L21/28525 ,  H01L21/28568 ,  H01L21/6719 ,  H01L21/67207 ,  H01L29/4958 ,  H01L29/4966

Abstract: Embodiments of an integrated platform for fabricating n-type metal oxide semiconductor (NMOS) devices are provided herein. In some embodiments, an integrated platform for fabricating n-type metal oxide semiconductor (NMOS) devices may include a first deposition chamber configured to deposit a first layer atop the substrate, the first layer comprising titanium oxide (TiO2) or selenium (Se); a second deposition chamber configured to deposit a second layer atop the first layer, the second layer comprising titanium; a third deposition chamber configured to deposit a third layer atop the second layer, the third layer comprising one of titanium nitride (TiN) or tungsten nitride (WN).

Abstract translation: 本文提供了用于制造n型金属氧化物半导体（NMOS）器件的集成平台的实施例。 在一些实施例中，用于制造n型金属氧化物半导体（NMOS）器件的集成平台可以包括第一沉积室，其被配置为在衬底顶部沉积第一层，第一层包含氧化钛（TiO 2）或硒（Se）; 第二沉积室，被配置为在所述第一层顶部沉积第二层，所述第二层包含钛; 第三沉积室，被配置为在所述第二层顶部沉积第三层，所述第三层包括氮化钛（TiN）或氮化钨（WN）之一。

公开(公告)号：US20220077298A1

公开(公告)日：2022-03-10

申请号：US17013161

申请日：2020-09-04

Applicant: Applied Materials, Inc.

Inventor： SRINIVAS GANDIKOTA ,  Steven C. H. Hung ,  Mandyam Sriram ,  Jacqueline S. Wrench ,  Yixiong Yang ,  Yong Yang

IPC: H01L29/49 ,  H01L29/51 ,  H01L29/40

Abstract: Metal gate stacks and integrated methods of forming metal gate stacks are disclosed. Some embodiments comprise NbN as a PMOS work function material at a thickness in a range of greater than or equal to 5 Å to less than or equal to 50 Å. The PMOS work function material comprising NbN has an effective work function of greater than or equal to 4.75 eV. Some embodiments comprise HfO2 as a high-κ metal oxide layer. Some embodiments provide improved PMOS bandedge performance evidenced by improved flatband voltage. Some embodiments exclude transition metal niobium nitride materials as work function materials.

公开(公告)号：US20190385851A1

公开(公告)日：2019-12-19

申请号：US16444856

申请日：2019-06-18

Applicant: Applied Materials, Inc.

Inventor： SRINIVAS GANDIKOTA ,  Abhijit Basu Mallick ,  Swaminathan Srinivasan ,  Rui Cheng ,  Susmit Singha Roy ,  Gaurav Thareja ,  Mukund Srinivasan ,  Sanjay Natarajan

IPC: H01L21/225 ,  H01L21/30 ,  H01L21/02 ,  H01L21/67

Abstract: Methods of doping a semiconductor material are disclosed. Some embodiments provide for conformal doping of three dimensional structures. Some embodiments provide for doping with high concentrations of boron for p-type doping.

公开(公告)号：US20160097119A1

公开(公告)日：2016-04-07

申请号：US14507780

申请日：2014-10-06

Applicant: APPLIED MATERIALS, INC.

Inventor： ANQING CUI ,  FARUK GUNGOR ,  DIEN-YEH WU ,  VIKAS JANGRA ,  MUHAMMAD M. RASHEED ,  WEI V. TANG ,  YIXIONG YANG ,  XIAOXIONG YUAN ,  KYOUNG-HO BU ,  SRINIVAS GANDIKOTA ,  YU CHANG ,  WILLIAM W. KUANG

IPC: C23C16/44 ,  C23C16/46 ,  B08B7/00 ,  C23C16/455

CPC classification number: C23C16/4405 ,  C23C16/452 ,  C23C16/45506 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/4558 ,  H01J37/32357 ,  H01J37/32522 ,  H01J37/32862

Abstract: Methods and apparatus for cleaning an atomic layer deposition chamber are provided herein. In some embodiments, a chamber lid assembly includes: a housing enclosing a central channel that extends along a central axis and has an upper portion and a lower portion; a lid plate coupled to the housing and having a contoured bottom surface that extends downwardly and outwardly from a central opening coupled to the lower portion of the central channel to a peripheral portion of the lid plate; a first heating element to heat the central channel; a second heating element to heat the bottom surface of the lid plate; a remote plasma source fluidly coupled to the central channel; and an isolation collar coupled between the remote plasma source and the housing, wherein the isolation collar has an inner channel extending through the isolation collar to fluidly couple the remote plasma source and the central channel.

Abstract translation: 本文提供了用于清洁原子层沉积室的方法和装置。 在一些实施例中，腔室盖组件包括：壳体，其包围沿着中心轴线延伸并具有上部和下部的中心通道; 盖板，其联接到壳体并且具有轮廓的底表面，其从耦合到中心通道的下部的中心开口向下和向外延伸到盖板的周边部分; 第一加热元件，用于加热中心通道; 第二加热元件，用于加热盖板的底面; 流体耦合到中央通道的远程等离子体源; 以及耦合在所述远程等离子体源和所述壳体之间的隔离套环，其中所述隔离套环具有延伸穿过所述隔离套环的内部通道，以流体地耦合所述远程等离子体源和所述中央通道。