公开(公告)号：US20160181086A1

公开(公告)日：2016-06-23

申请号：US14602201

申请日：2015-01-21

Applicant: Applied Materials, Inc.

Inventor： Ekaterina Mikhaylichenko ,  Brian J. Brown ,  Kyle M. Hanson ,  Vincent S. Francischetti

IPC: H01L21/02 ,  B08B3/08 ,  H01L21/67 ,  H01L21/677

CPC classification number: H01L21/02054 ,  B08B3/08 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67057 ,  H01L21/67733 ,  H01L21/67736 ,  H01L21/67751

Abstract: In some embodiments, a system is provided that includes (1) a loading position; (2) a drying position; (3) a movable tank configured to (a) hold at least one substrate; (b) hold a cleaning chemistry so as to expose a substrate within the movable tank to the cleaning chemistry; and (c) translate between the loading position and the drying position; and (4) a drying station located at the drying position and configured to rinse and dry a substrate as the substrate is unloaded from the movable tank when the movable tank is at the drying position. Numerous other aspects are provided.

Abstract translation: 在一些实施例中，提供一种系统，其包括（1）装载位置; （2）干燥位置; （3）可移动罐，其构造成（a）保持至少一个基板; （b）保持清洁化学品，以将可移动罐内的基底暴露于清洁化学品; 和（c）在装载位置和干燥位置之间平移; 和（4）位于干燥位置处的干燥站，其构造为当可移动罐处于干燥位置时基底从可移动罐卸载时冲洗和干燥基底。 提供了许多其他方面。

公开(公告)号：US20150069043A1

公开(公告)日：2015-03-12

申请号：US14025678

申请日：2013-09-12

Applicant: APPLIED Materials, Inc.

Inventor： Vincent Steffan Francischetti ,  Gregory J. Wilson ,  Kyle M. Hanson ,  Paul Wirth ,  Robert B. Moore

IPC: H01L21/324 ,  H01L21/677 ,  H01L21/67

CPC classification number: H01L21/324 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/677 ,  H01L21/67748

Abstract: An anneal module for annealing semiconductor material wafers and similar substrates reduces particle contamination and oxygen ingress while providing uniform heating including for 500° C. processes. The anneal module may include a process chamber formed in a metal body having internal cooling lines. A hot plate has a pedestal supported on a thermal choke on the body. A gas distributor in the lid over the hot plate flows gas uniformly over the wafer. A transfer mechanism moves a hoop to shift the wafer between the hot plate and a cold plate.

Abstract translation: 用于退火半导体材料晶片和类似衬底的退火模块减少了颗粒污染和氧气进入，同时提供包括500℃工艺的均匀加热。 退火模块可以包括形成在具有内部冷却线的金属体中的处理室。 热板具有支撑在身体上的热扼流圈上的基座。 热板上的盖子中的气体分布器将气体均匀地流过晶片。 传送机构移动环以在热板和冷板之间移动晶片。

公开(公告)号：US20140246324A1

公开(公告)日：2014-09-04

申请号：US14194610

申请日：2014-02-28

Applicant: APPLIED Materials, Inc.

Inventor： Rajesh Baskaran ,  Robert W. Batz, JR. ,  Bioh Kim ,  Thomas L. Ritzdorf ,  John L. Klocke ,  Kyle M. Hanson ,  Marvin L. Bernt ,  Ross Kulzer

IPC: C25D17/00

CPC classification number: C25D17/002 ,  C25D7/12 ,  C25D7/123 ,  C25D17/001 ,  C25D21/12 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76868 ,  H01L21/76873

Abstract: Processes and systems for electrochemical deposition of a multi-component solder by processing a microfeature workpiece with a first processing fluid and an anode are described. Microfeature workpieces are electrolytically processed using a first processing fluid, an anode, a second processing fluid, and a cation permeable barrier layer. The cation permeable barrier layer separates the first processing fluid from the second processing fluid while allowing certain cationic species to transfer between the two fluids.

Abstract translation: 描述了通过用第一处理流体和阳极处理微特征工件来电化学沉积多组分焊料的工艺和系统。 使用第一处理流体，阳极，第二处理流体和阳离子可渗透阻挡层对微特征工件进行电解处理。 阳离子可渗透阻隔层将第一处理流体与第二处理流体分离，同时允许某些阳离子物质在两种流体之间转移。

公开(公告)号：US20140209472A1

公开(公告)日：2014-07-31

申请号：US14176881

申请日：2014-02-10

Applicant: APPLIED Materials, Inc.

Inventor： Rajesh Baskaran ,  Robert W. Batz, JR. ,  Bioh Kim ,  Tom L. Ritzdorf ,  John L. Klocke ,  Kyle M. Hanson

IPC: C25D5/00

CPC classification number: C25D7/12 ,  C25D5/00 ,  C25D7/123 ,  C25D17/001 ,  C25D17/002 ,  C25D17/02 ,  C25D21/12

Abstract: Processes and systems for electrolytically processing a microfeature workpiece with a first processing fluid and an anode are described. Microfeature workpieces are electrolytically processed using a first processing fluid, an anode, a second processing fluid, and a cation permeable barrier layer. The cation permeable barrier layer separates the first processing fluid from the second processing fluid while allowing certain cationic species to transfer between the two fluids. The described processes produce deposits over repeated plating cycles that exhibit deposit properties (e.g., resistivity) within desired ranges.

Abstract translation: 描述了利用第一处理流体和阳极电解处理微特征工件的工艺和系统。 使用第一处理流体，阳极，第二处理流体和阳离子可渗透阻挡层对微特征工件进行电解处理。 阳离子可渗透阻隔层将第一处理流体与第二处理流体分离，同时允许某些阳离子物质在两种流体之间转移。 所描述的方法在反复电镀循环中产生沉积物，其在所需范围内具有沉积性质（例如电阻率）。