公开(公告)号：US11171023B2

公开(公告)日：2021-11-09

申请号：US15288404

申请日：2016-10-07

Applicant: Applied Materials, Inc.

Inventor： Schubert S. Chu ,  Douglas E. Holmgren ,  Kartik Shah ,  Palamurali Gajendra ,  Nyi O. Myo ,  Preetham Rao ,  Kevin Joseph Bautista ,  Zhiyuan Ye ,  Martin A. Hilkene ,  Errol Antonio C. Sanchez ,  Richard O. Collins

IPC: H01L21/67 ,  H01L21/268 ,  H01L21/324 ,  H01L21/687

Abstract: Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. The thermal process chamber may include a substrate support, a first plurality of heating elements disposed over the substrate support, and one or more high-energy radiant source assemblies disposed over the first plurality of heating elements. The one or more high-energy radiant source assemblies are utilized to provide local heating of cold regions on a substrate disposed on the substrate support during processing. Localized heating of the substrate improves temperature profile, which in turn improves deposition uniformity.

公开(公告)号：US11029297B2

公开(公告)日：2021-06-08

申请号：US16449045

申请日：2019-06-21

Applicant: Applied Materials, Inc.

Inventor： Zhiyuan Ye

IPC: G01N33/00 ,  G01N29/036

Abstract: Methods and systems for determining concentrations of gases within a process chamber are provided. In one or more embodiments, a method includes introducing a first gas into a first cavity of a gas monitoring module, where the first cavity is thermally coupled to a second cavity of the gas monitoring module, and where the first cavity contains a first inlet and the first gas is introduced via the first inlet. The method includes introducing a gas mixture containing the first gas and a second gas into a second cavity, where the second cavity contains a second inlet and the gas mixture is introduced via the second inlet. The method also includes determining a first speed of sound inside the first cavity, determining a second speed of sound inside the second cavity, and determining a concentration of the second gas in the second cavity based on the first and second speeds of sound.

公开(公告)号：US20200373195A1

公开(公告)日：2020-11-26

申请号：US16854295

申请日：2020-04-21

Applicant: Applied Materials, Inc.

Inventor： Shu-Kwan Lau ,  Zhiyuan Ye ,  Martin A. Hilkene

IPC: H01L21/687 ,  H01L21/67

Abstract: Embodiments of the disclosure include methods and apparatus for a thermal chamber with a low thermal mass. In one embodiment, a chamber is disclosed that includes a body, a susceptor positioned within the body, a first set of heating devices positioned in an upper portion of the body above the susceptor and a second set of heating devices positioned in a lower portion of the body below the susceptor, wherein each of the first set of heating devices have a heating element having a longitudinal axis extending in a first direction, and each of the second set of heating devices have a heating element having a longitudinal axis extending in a second direction that is orthogonal to the first direction, and wherein each of the heating elements have ends that are exposed to ambient environment.

公开(公告)号：US20200051840A1

公开(公告)日：2020-02-13

申请号：US16659332

申请日：2019-10-21

Applicant: Applied Materials, Inc.

Inventor： Kevin Brashear ,  Ashley M. Okada ,  Dennis L. Demars ,  Zhiyuan Ye ,  Jaidev Rajaram ,  Marcel E. Josephson

IPC: H01L21/67 ,  G05D11/13

Abstract: In embodiments, a process gas supply provides a carrier gas and one or more process gases to a distribution manifold. A back pressure sensor senses back pressure in the distribution manifold and provides a signal to the first controller based at least in part on the back pressure. The first controller determines a back pressure set point based at least in part on the signal. One or more mass flow controllers control the flow of the gas mixture comprising the carrier gas and the one or more process gases into one or more zones of the process chamber. An upstream pressure controller fluidly and operatively connected to the distribution manifold controls flow of the carrier gas based on the back pressure set point.

公开(公告)号：US20190293476A1

公开(公告)日：2019-09-26

申请号：US15936428

申请日：2018-03-26

Applicant: Applied Materials, Inc.

Inventor： Zhiyuan Ye ,  Justin Hough ,  Marcel E. Josephson

IPC: G01F25/00 ,  G01F1/36 ,  G05D7/06 ,  G05B23/02 ,  G01F1/50 ,  G01F1/38

Abstract: Mass flow verification systems and apparatus verify mass flow rates of mass flow controllers (MFCs) based on pressure decay principles. Embodiments include a location for coupling a calibrated gas flow standard or a MFC to be tested in a line to receive a gas flow from a gas supply; a control volume serially coupled to the location in the line to receive the gas flow; a flow restrictor serially coupled to the control volume; a pump serially coupled to the flow restrictor; and a controller adapted to allow the gas supply to flow gas through the mass flow control verification system to achieve a stable pressure in the control volume, terminate the gas flow from the gas supply, and measure a rate of pressure decay in the control volume over time. Numerous additional aspects are disclosed.

公开(公告)号：US10269600B2

公开(公告)日：2019-04-23

申请号：US15070332

申请日：2016-03-15

Applicant: Applied Materials, Inc.

Inventor： Kevin Brashear ,  Ashley M. Okada ,  Dennis L. Demars ,  Zhiyuan Ye ,  Jaidev Rajaram ,  Marcel E. Josephson

IPC: H01L21/67 ,  G05D11/13

Abstract: Methods and gas flow control assemblies configured to deliver gas to process chamber zones in desired flow ratios. In some embodiments, assemblies include one or more MFCs and a back pressure controller (BPC). Assemblies includes a controller, a process gas supply, a distribution manifold, a pressure sensor coupled to the distribution manifold and configured to sense back pressure of the distribution manifold, a process chamber, a one or more mass flow controllers connected between the distribution manifold and process chamber to control gas flow there between, and a back pressure controller provided in fluid parallel relationship to the one or more mass flow controllers, wherein precise flow ratio control is achieved. Alternate embodiment include an upstream pressure controller configured to control flow of carrier gas to control back pressure. Further methods and assemblies for controlling zonal gas flow ratios are described, as are other aspects.

公开(公告)号：US10132003B2

公开(公告)日：2018-11-20

申请号：US15656457

申请日：2017-07-21

Applicant: Applied Materials, Inc.

Inventor： Shu-Kwan Lau ,  Surajit Kumar ,  Joseph M. Ranish ,  Zhiyuan Ye ,  Kartik Shah ,  Mehmet Tugrul Samir ,  Errol Antonio C. Sanchez

IPC: C30B25/16 ,  C30B33/02 ,  C23C16/44 ,  C30B25/10 ,  C23C16/46

Abstract: Embodiments disclosed herein generally related to a processing chamber, and more specifically a heat modulator assembly for use in a processing chamber. The heat modulator assembly includes a heat modulator housing and a plurality of heat modulators. The heat modulator housing includes a housing member defining a housing plane, a sidewall, and an annular extension. The sidewall extends perpendicular to the housing plane. The annular extension extends outward from the sidewall. The plurality of heat modulators is positioned in the housing member.

公开(公告)号：US20170271183A1

公开(公告)日：2017-09-21

申请号：US15070332

申请日：2016-03-15

Applicant: Applied Materials, Inc.

Inventor： Kevin Brashear ,  Ashley M. Okada ,  Dennis L. Demars ,  Zhiyuan Ye ,  Jaidev Rajaram ,  Marcel E. Josephson

IPC: H01L21/67 ,  G05D7/06

CPC classification number: H01L21/67253 ,  G05D11/132 ,  H01L21/67017

Abstract: Methods and gas flow control assemblies configured to deliver gas to process chamber zones in desired flow ratios. In some embodiments, assemblies include one or more MFCs and a back pressure controller (BPC). Assemblies includes a controller, a process gas supply, a distribution manifold, pressure sensor coupled to the distribution manifold and configured to sense back pressure of the distribution manifold, a process chamber, a one or more mass flow controllers connected between the distribution manifold and process chamber to control gas flow there between, and a back pressure controller provided in fluid parallel relationship to the one or more mass flow controllers, wherein precise flow ratio control is achieved. Alternate embodiment include an upstream pressure controller configured to control flow of carrier gas to control back pressure. Further methods and assemblies for controlling zonal gas flow ratios are described, as are other aspects.

公开(公告)号：US09530888B2

公开(公告)日：2016-12-27

申请号：US15073245

申请日：2016-03-17

Applicant: Applied Materials, Inc.

Inventor： Keun-Yong Ban ,  Zhiyuan Ye ,  Errol Antonio C. Sanchez ,  Xinyu Bao ,  David K. Carlson

IPC: H01L21/02 ,  H01L29/78 ,  H01L29/66 ,  H01L29/10 ,  H01L29/04 ,  H01L29/205 ,  H01L27/092 ,  H01L21/8238

CPC classification number: H01L29/7849 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02439 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02466 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/823807 ,  H01L27/092 ,  H01L29/045 ,  H01L29/1054 ,  H01L29/20 ,  H01L29/205 ,  H01L29/66522

Abstract: Embodiments of the present disclosure generally relate to a semiconductor device including layers of group III-V semiconductor materials. In one embodiment, the semiconductor device includes a phosphorous containing layer deposited on a silicon substrate, wherein a lattice mismatch between the phosphorous containing layer and the silicon substrate is less than 5%, a group III-V compound nucleation layer deposited on the phosphorous containing layer at a first temperature, the group III-V compound nucleation layer having a first thickness, a group III-V compound transition layer deposited on the group III-V compound nucleation layer at a second temperature higher than the first temperature, the group III-V compound transition layer having a second thickness larger than the first thickness, and the group III-V compound nucleation layer is different from the group III-V compound transition layer, and an active layer deposited on the group III-V compound transition layer.

Abstract translation: 本公开的实施例一般涉及包括III-V族III族半导体材料层的半导体器件。 在一个实施例中，半导体器件包括沉积在硅衬底上的含磷层，其中含磷层和硅衬底之间的晶格失配小于5％，III-V族化合物成核层沉积在含磷 III族化合物成核层，第III-V族化合物成核层，第III-V族化合物成核层，第III-V族化合物成核层，第III-V族化合物成核层， -V化合物过渡层，其具有大于第一厚度的第二厚度，III-V族化合物成核层与III-V族化合物过渡层不同，并且沉积在III-V族化合物过渡层上的活性层 。

公开(公告)号：US12165934B2

公开(公告)日：2024-12-10

申请号：US16938510

申请日：2020-07-24

Applicant: Applied Materials, Inc.

Inventor： Zuoming Zhu ,  Shu-Kwan Lau ,  Ala Moradian ,  Enle Choo ,  Flora Fong-Song Chang ,  Vilen K Nestorov ,  Zhiyuan Ye ,  Bindusagar Marath Sankarathodi ,  Maxim D. Shaposhnikov ,  Surendra Singh Srivastava ,  Zhepeng Cong ,  Patricia M. Liu ,  Errol C. Sanchez ,  Jenny C. Lin ,  Schubert S. Chu ,  Balakrishnam R. Jampana

IPC: H01L21/66 ,  H01L21/67

Abstract: A method for processing a substrate within a processing chamber comprises receiving a first radiation signal corresponding to a film on a target element disposed within the processing chamber, analyzing the first radiation signal, and controlling the processing of the substrate based on the analyzed first radiation signal. The processing chamber includes a substrate support configured to support the substrate within a processing volume and a controller coupled to a first sensing device configured to receive the first radiation signal.