公开(公告)号：US11011357B2

公开(公告)日：2021-05-18

申请号：US15890694

申请日：2018-02-07

Applicant: APPLIED MATERIALS, INC.

Inventor： Hanbing Wu ,  Anantha K. Subramani ,  Ashish Goel ,  Xiaodong Wang ,  Wei W. Wang ,  Rongjun Wang ,  Chi Hong Ching

IPC: H01J37/34 ,  H01L43/12 ,  H01J37/32 ,  H01J61/10 ,  H01L43/08 ,  H01L43/10

Abstract: Methods and apparatus for processing substrates with a multi-cathode chamber. The multi-cathode chamber includes a shield with a plurality of holes and a plurality of shunts. The shield is rotatable to orient the holes and shunts with a plurality of cathodes located above the shield. The shunts interact with magnets from the cathodes to prevent interference during processing. The shield can be raised and lowered to adjust gapping between a target of a cathode and a hole to provide a dark space during processing.

公开(公告)号：US10910557B2

公开(公告)日：2021-02-02

申请号：US16570492

申请日：2019-09-13

Applicant: APPLIED MATERIALS, INC.

Inventor： Chi Ching ,  Renu Whig ,  Rongjun Wang

IPC: H01L43/12 ,  H01L43/10 ,  H01L43/02 ,  H01L27/22 ,  H01F41/32 ,  H01F10/32 ,  G11C11/16

Abstract: Methods and apparatus for forming a magnetic tunnel element are provided herein. A method of forming a magnetic tunnel element includes: depositing a magnetic layer atop a cobalt-chromium seed layer; and depositing a tunnel layer atop the magnetic layer to form a magnetic tunnel element, wherein the magnetic tunnel element has a TMR greater than 100. For example, a cobalt/platinum material or one or more layers thereof may be deposited directly atop a cobalt-chromium seed layer to produce improved devices.

公开(公告)号：US10718049B2

公开(公告)日：2020-07-21

申请号：US15830924

申请日：2017-12-04

Applicant: APPLIED MATERIALS, INC.

Inventor： Muhammad Rasheed ,  Rongjun Wang ,  Zhendong Liu ,  Xinyu Fu ,  Xianmin Tang

IPC: C23C14/35 ,  C23C14/56 ,  H01J37/32 ,  H01J37/34

Abstract: Apparatus for improved particle reduction are provided herein. In some embodiments, an apparatus may include a process kit shield comprising a one-piece metal body having an upper portion and a lower portion and having an opening disposed through the one-piece metal body, wherein the upper portion includes an opening-facing surface configured to be disposed about and spaced apart from a target of a physical vapor deposition chamber and wherein the opening-facing surface is configured to limit particle deposition on an upper surface of the upper portion of the one-piece metal body during sputtering of a target material from the target of the physical vapor deposition chamber.

公开(公告)号：US10109481B2

公开(公告)日：2018-10-23

申请号：US14410790

申请日：2013-07-01

Applicant: Applied Materials, Inc.

Inventor： Mingwei Zhu ,  Nag B. Patibandla ,  Rongjun Wang ,  Vivek Agrawal ,  Anantha Subramani ,  Daniel Lee Diehl ,  Xianmin Tang

IPC: H01L21/02 ,  H01L21/3065 ,  H01L21/322 ,  H01J37/34 ,  C23C14/00 ,  C23C14/06

Abstract: Embodiments of the invention described herein generally relate to an apparatus and methods for forming high quality buffer layers and Group III-V layers that are used to form a useful semiconductor device, such as a power device, light emitting diode (LED), laser diode (LD) or other useful device. Embodiments of the invention may also include an apparatus and methods for forming high quality buffer layers, Group III-V layers and electrode layers that are used to form a useful semiconductor device. In some embodiments, an apparatus and method includes the use of one or more cluster tools having one or more physical vapor deposition (PVD) chambers that are adapted to deposit a high quality aluminum nitride (AlN) buffer layer that has a high crystalline orientation on a surface of a plurality of substrates at the same time.

公开(公告)号：US10060024B2

公开(公告)日：2018-08-28

申请号：US15679480

申请日：2017-08-17

Applicant: Applied Materials, Inc.

Inventor： Zhendong Liu ,  Rongjun Wang ,  Xianmin Tang ,  Srinivas Gandikota ,  Tza-Jing Gung ,  Muhammad M. Rasheed

IPC: C23C14/34 ,  H01J37/34

CPC classification number: C23C14/3407 ,  H01J37/342 ,  H01J37/3423

Abstract: Target assemblies and PVD chambers including target assemblies are disclosed. The target assembly includes a target that has a concave shaped target. When used in a PVD chamber, the concave target provides more radially uniform deposition on a substrate disposed in the sputtering chamber.

公开(公告)号：US09689070B2

公开(公告)日：2017-06-27

申请号：US15216389

申请日：2016-07-21

Applicant: Applied Materials, Inc.

Inventor： Muhammad Rasheed ,  Keith A. Miller ,  Rongjun Wang

IPC: C23C14/34 ,  C23C14/50 ,  C23C16/458 ,  C23C14/56 ,  H01L21/687

CPC classification number: C23C14/50 ,  C23C14/3407 ,  C23C14/564 ,  C23C16/4585 ,  H01L21/68735

Abstract: Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a deposition ring and a pedestal assembly. The components of the process kit work alone, and in combination, to significantly reduce their effects on the electric fields around a substrate during processing.

公开(公告)号：US20250006552A1

公开(公告)日：2025-01-02

申请号：US18753144

申请日：2024-06-25

Applicant: Applied Materials Inc.

Inventor： Liqi Wu ,  Rongjun Wang ,  Feng Q. Liu ,  Qihao Zhu ,  Jiang Lu ,  David Thompson ,  Xianmin Tang

IPC: H01L21/768 ,  H01L21/3213

Abstract: Embodiments of the disclosure relate to methods of selectively depositing a metallic material after forming a flowable polymer film to protect a substrate surface within a feature. A first metal liner is deposited by physical vapor deposition (PVD). The flowable polymer film is formed on the first metal liner on the bottom. A portion of the first metal liner is selectively removed from the top surface and the at least one sidewall. The flowable polymer film is removed. In some embodiments, the cycle of depositing a metal liner, forming a flowable polymer film, removing a portion of the metal liner, and removing the flowable polymer film is repeated at least once. A metal layer is deposited on the plurality of metal liners (e.g., first metal liner and the second metal liner) and the metal layer is free of seams or voids.

公开(公告)号：US12112890B2

公开(公告)日：2024-10-08

申请号：US17478047

申请日：2021-09-17

Applicant: Applied Materials, Inc.

Inventor： Borui Xia ,  Anthony Chih-Tung Chan ,  Shiyu Yue ,  Wei Lei ,  Aravind Miyar Kamath ,  Mukund Sundararajan ,  Rongjun Wang ,  Adolph Miller Allen

IPC: C23C14/35 ,  H01F7/18

CPC classification number: H01F7/18 ,  C23C14/358

Abstract: Magnet assemblies comprising a housing with a top plate each comprising aligned openings are described. The housing has a bottom ring and an annular wall with a plurality of openings formed in the bottom ring. The top plate is on the housing and has a plurality of openings aligned with the plurality of openings in the bottom ring of the housing. The magnet assembly may also include a non-conducting base plate and/or a conductive cover plate. Methods for using the magnet assembly and magnetic field tuning are also described.

公开(公告)号：US20240240314A1

公开(公告)日：2024-07-18

申请号：US18402079

申请日：2024-01-02

Applicant: Applied Materials, Inc.

Inventor： Zhen Liu ,  Min-Han Lee ,  Jie Zhang ,  Yongqian Gao ,  Tsung-Han Yang ,  Rongjun Wang

IPC: C23C16/455 ,  C23C16/06 ,  C23C16/56

CPC classification number: C23C16/45525 ,  C23C16/06 ,  C23C16/56

Abstract: Embodiments of the disclosure relate to methods for metal gapfill of a logic device with lower resistivity. Specific embodiments provide integrated separate tungsten PVD processes with plasma-etch to solve the overhang issue caused by tungsten PVD and the high resistivity caused by nucleation.

公开(公告)号：US20240167148A1

公开(公告)日：2024-05-23

申请号：US17989767

申请日：2022-11-18

Applicant: Applied Materials, Inc.

Inventor： Tsung-Han Yang ,  Shiyu Yue ,  Rongjun Wang

IPC: C23C16/02 ,  B08B7/00 ,  C23C16/06

CPC classification number: C23C16/0227 ,  B08B7/0035 ,  C23C16/06

Abstract: Embodiments of the disclosure are directed to methods of removing metal oxide from a substrate surface by exposing the substrate surface to an un-biased cleaning plasma comprising a mixture of hydrogen (H2) and oxygen (O2). In some embodiments, the substrate surface has at least one feature thereon, the at least one feature defining a trench having a top surface, a bottom surface, and two opposed sidewalls. The un-biased cleaning plasma comprises in a range of from 1% to 20% oxygen (O2) on a molecular basis and greater than or equal to 80% hydrogen (H2). The un-biased cleaning plasma removes substantially all of the metal oxide—such as molybdenum oxide (MoOx), ruthenium oxide (RuOx), or tungsten oxide (WOx)—from the substrate surface, and the top surface, the bottom surface, and the two opposed sidewalls of the trench without damaging the dielectric and/or critical dimension (CD)/profile of the structure.