公开(公告)号：US20070269978A1

公开(公告)日：2007-11-22

申请号：US11605893

申请日：2006-11-28

申请人： Chien-Hsueh Shih ,  Minghsing Tsai ,  Chen-Hua Yu ,  Ming-Shih Yeh

发明人： Chien-Hsueh Shih ,  Minghsing Tsai ,  Chen-Hua Yu ,  Ming-Shih Yeh

IPC分类号： H01L21/768

CPC分类号： H01L21/76849 ,  H01L21/02074 ,  H01L21/3212 ,  H01L21/32134 ,  H01L21/76865 ,  H01L21/76883

摘要： An integrated circuit includes a semiconductor substrate, a low-k dielectric layer over the semiconductor substrate, a first opening in the low-k dielectric layer, and a first diffusion barrier layer in the first opening covering the low-k dielectric layer in the first opening, wherein the first diffusion barrier layer has a bottom portion connected to sidewall portions, and wherein the sidewall portions have top surfaces close to a top surface of the low-k dielectric layer. The integrated circuit further includes a conductive line filling the first opening wherein the conductive line has a top surface lower than the top surfaces of the sidewall portions of the diffusion barrier layer, and a metal cap on the conductive line and only within a region directly over the conductive line.

摘要翻译： 集成电路包括半导体衬底，半导体衬底上的低k电介质层，低k电介质层中的第一开口，第一开口中的第一扩散阻挡层，覆盖第一开口中的低k电介质层 开口，其中所述第一扩散阻挡层具有连接到侧壁部分的底部，并且其中所述侧壁部分具有靠近所述低k电介质层的顶表面的顶表面。 集成电路还包括填充第一开口的导电线，其中导电线具有比扩散阻挡层的侧壁部分的顶表面低的顶表面，以及导电线上的金属盖，并且仅在直接在 导线。

公开(公告)号：US20060118962A1

公开(公告)日：2006-06-08

申请号：US11004767

申请日：2004-12-03

申请人： Jui Huang ,  Minghsing Tsai ,  Shau-Lin Shue ,  Hung-Wen Su ,  Ting-Chu Ko

发明人： Jui Huang ,  Minghsing Tsai ,  Shau-Lin Shue ,  Hung-Wen Su ,  Ting-Chu Ko

IPC分类号： H01L23/48 ,  H01L23/52

CPC分类号： H01L21/76838 ,  H01L21/76805 ,  H01L21/76807 ,  H01L21/76834 ,  H01L23/5226 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming an integrated circuit interconnect structure is presented. A first conductive line is formed over a semiconductor substrate. A conductive cap layer is formed on the first conductive line to improve device reliability. An etch stop layer (ESL) is formed on the conductive cap layer. An inter-level dielectric (IMD) is formed on the ESL. A via opening and a trench are formed in the ESL, IMD, and conductive cap layer. A recess is formed in the first conductive line. The recess can be formed by over etching when the first dielectric is etched, or by a separate process such as argon sputtering. A second conductive line is formed filling the trench, opening and recess.

摘要翻译： 提出了一种形成集成电路互连结构的方法。 在半导体衬底上形成第一导电线。 导电盖层形成在第一导电线上以提高器件的可靠性。 在导电盖层上形成蚀刻停止层（ESL）。 在ESL上形成层间电介质（IMD）。 通孔和沟槽形成在ESL，IMD和导电盖层中。 在第一导线中形成凹部。 当蚀刻第一电介质时，或者通过诸如氩气溅射的分离工艺，可以通过过蚀刻形成凹部。 形成第二导电线，填充沟槽，开口和凹陷。

公开(公告)号：US20050211564A1

公开(公告)日：2005-09-29

申请号：US10811621

申请日：2004-03-29

申请人： Chien-Hsueh Shih ,  Minghsing Tsai

发明人： Chien-Hsueh Shih ,  Minghsing Tsai

IPC分类号： C25D3/00 ,  C25D3/02 ,  C25D3/38 ,  H01L21/288

CPC分类号： C25D3/38 ,  C25D3/02 ,  H01L21/2885

摘要： A composition and method which substantially enhances the wetting of an electrolyte solution to a surface in the electrochemical plating of a metal such as copper on the surface. The composition is an organic mixture which includes an organic acid, such as citric acid or acetic acid, and a low molecular weight ionic polymer such as an alcohol, an amine or alkyphenol alkoxylate. The method includes suspending the composition as a layer in the solution and passing the surface through the composition suspension layer to define a wetting layer on the surface. Consequently, metal electroplated onto the surface is substantially devoid of pits or other structural defects.

摘要翻译： 一种组合物和方法，其显着增强电解质溶液在表面上的金属如铜的电化学电镀中的表面的润湿。 该组合物是包括有机酸如柠檬酸或乙酸的有机混合物，以及低分子量离子聚合物如醇，胺或烷基酚烷氧基化物。 该方法包括将组合物作为层悬浮在溶液中并使表面通过组合物悬浮层以在表面上限定润湿层。 因此，电镀在表面上的金属基本上没有凹坑或其他结构缺陷。

公开(公告)号：US20050199507A1

公开(公告)日：2005-09-15

申请号：US10796470

申请日：2004-03-09

申请人： Chien-Hsueh Shih ,  Minghsing Tsai ,  Shaulin Shue

发明人： Chien-Hsueh Shih ,  Minghsing Tsai ,  Shaulin Shue

IPC分类号： C25D3/00 ,  C25D3/38

CPC分类号： C25D3/38

摘要： A composition and method which is suitable to enhance the wetting of an electroplating bath solution on an electroplating surface. Optimum wetting of the electroplating bath solution to the electroplating surface results in an electroplated metal which is substantially devoid of surface pits and other structural defects and is characterized by enhanced gap fill capability. The composition includes a suppressor additive for the electroplating bath solution. The suppressor additive is a copolymer which includes various proportions of ethylene oxide monomer and propylene oxide monomer.

摘要翻译： 一种适合于增强电镀浴液在电镀表面上的润湿性的组合物和方法。 电镀浴液对电镀表面的最佳润湿导致电镀金属基本上没有表面凹坑和其他结构缺陷，其特征在于增强的间隙填充能力。 该组合物包括用于电镀浴溶液的抑制添加剂。 抑制添加剂是包含各种比例的环氧乙烷单体和环氧丙烷单体的共聚物。

公开(公告)号：US20050045485A1

公开(公告)日：2005-03-03

申请号：US10654523

申请日：2003-09-03

申请人： Chien-Hsueh Shih ,  Ting-Chu Ko ,  Minghsing Tsai

发明人： Chien-Hsueh Shih ,  Ting-Chu Ko ,  Minghsing Tsai

IPC分类号： C25D3/38 ,  C25D5/10 ,  C25D7/12 ,  C25D15/00 ,  H01L21/288 ,  H01L21/768 ,  H05K3/42 ,  C25D5/02 ,  H01L21/445

CPC分类号： H01L21/76877 ,  C25D3/38 ,  C25D5/10 ,  C25D7/123 ,  C25D15/00 ,  H01L21/2885 ,  H05K3/423

摘要： A method for reducing or avoiding copper layer pitting in a copper electrochemical deposition process to improve deposition uniformity including providing a substrate for carrying out at least a first copper electroplating process; providing a copper electroplating solution including a deforming (antiforming) agent wherein the antiforming (deforming) agent includes at least one alkylene monomer; and, carrying out at least a first copper electroplating process to deposit at least a first copper layer.

摘要翻译： 一种用于在铜电化学沉积工艺中减少或避免铜层点蚀以改善沉积均匀性的方法，包括提供用于执行至少第一铜电镀工艺的衬底; 提供包括变形（防形）剂的铜电镀溶液，其中抗变形（变形）试剂包括至少一种亚烷基单体; 并且进行至少第一铜电镀工艺以至少沉积第一铜层。