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146 条记录 (耗时 0.035 秒)

    Write operations for phase-change-material memory
    42.
    发明授权
    Write operations for phase-change-material memory 有权
    相变材料存储器的写操作

    公开(公告)号：US07460389B2

    公开(公告)日：2008-12-02

    申请号：US11193878

    申请日：2005-07-29

    申请人： Louis L. C. Hsu ,  Brian L. Ji ,  Chung Hon Lam

    发明人： Louis L. C. Hsu ,  Brian L. Ji ,  Chung Hon Lam

    IPC分类号： G11C13/00 ,  G11C11/00

    CPC分类号： G11C13/0069 ,  G11C13/0004 ,  G11C2013/0076 ,  G11C2013/0078 ,  G11C2213/79

    摘要： Improved write operation techniques for use in phase-change-material (PCM) memory devices are disclosed. By way of one example, a method of performing a write operation in a phase-change-material memory cell, the memory cell having a set phase and a reset phase associated therewith, comprises the following steps. A word-line associated with the memory cell is monitored. Performance of a write operation to the memory cell for the set phase is initiated when the word-line is activated. The write operation to the memory cell for the set phase may then be continued when valid data for the set phase is available. A write operation to the memory cell for the reset phase may be performed when valid data for the reset phase is available. Other improved PCM write operation techniques are disclosed.

    摘要翻译： 公开了用于相变材料（PCM）存储器件的改进的写操作技术。 作为一个示例，在相变材料存储器单元中执行写入操作的方法，具有设置相位和与其相关联的复位阶段的存储器单元包括以下步骤。 监视与存储器单元相关联的字线。 当字线被激活时，启动对设置阶段的存储单元的写操作的执行。 然后可以在设定阶段的有效数据可用时继续对设定阶段的存储单元的写入操作。 当复位阶段的有效数据可用时，可以执行对复位阶段的存储单元的写操作。 公开了其它改进的PCM写操作技术。

    Write Operations for Phase-Change-Material Memory
    43.
    发明申请
    Write Operations for Phase-Change-Material Memory 有权
    相变材料存储器的写操作

    公开(公告)号：US20080253177A1

    公开(公告)日：2008-10-16

    申请号：US12146128

    申请日：2008-06-25

    申请人： Louis L.C. Hsu ,  Brian L. Ji ,  Chung Hon Lam

    发明人： Louis L.C. Hsu ,  Brian L. Ji ,  Chung Hon Lam

    IPC分类号： G11C11/00 ,  G11C7/00

    CPC分类号： G11C13/0069 ,  G11C13/0004 ,  G11C2013/0076 ,  G11C2013/0078 ,  G11C2213/79

    摘要： Improved write operation techniques for use in phase-change-material (PCM) memory devices are disclosed. By way of one example, a method of performing a write operation in a phase-change-material memory cell, the memory cell having a set phase and a reset phase associated therewith, comprises the following steps. A word-line associated with the memory cell is monitored. Performance of a write operation to the memory cell for the set phase is initiated when the word-line is activated. The write operation to the memory cell for the set phase may then be continued when valid data for the set phase is available. A write operation to the memory cell for the reset phase may be performed when valid data for the reset phase is available. Other improved PCM write operation techniques are disclosed.

    摘要翻译： 公开了用于相变材料（PCM）存储器件的改进的写操作技术。 作为一个示例，在相变材料存储器单元中执行写入操作的方法，具有设置相位和与其相关联的复位阶段的存储器单元包括以下步骤。 监视与存储器单元相关联的字线。 当字线被激活时，启动对设置阶段的存储单元的写操作的执行。 然后可以在设定阶段的有效数据可用时继续对设定阶段的存储单元的写入操作。 当复位阶段的有效数据可用时，可以执行对复位阶段的存储单元的写操作。 公开了其它改进的PCM写操作技术。

    Precision tuning of a phase-change resistive element
    47.
    发明授权
    Precision tuning of a phase-change resistive element 有权
    相变电阻元件的精密调谐

    公开(公告)号：US07233177B2

    公开(公告)日：2007-06-19

    申请号：US11098078

    申请日：2005-04-04

    申请人： Louis C. Hsu ,  Brian L. Ji ,  Chung Hon Lam

    发明人： Louis C. Hsu ,  Brian L. Ji ,  Chung Hon Lam

    IPC分类号： H03K5/22 ,  G06G7/28

    CPC分类号： G11C13/0069 ,  G11C13/0004 ,  G11C13/0064 ,  G11C2013/0054

    摘要： The present invention comprises a method and structure for programming an on-chip phase-change resistor to a target resistance. Using an off-chip precision resistor as a reference, a state-machine determines a difference between the resistance of an on-chip resistor and the target resistance. Based upon this difference, the state machine directs a pulse generator to apply set or reset pulses to the on-chip resistor in order to decrease or increase, respectively, the resistance of the resistor, as necessary. In order to program the resistance of the phase-change resistor to a tight tolerance, it is successively reset and set by applying progressively decreasing numbers of reset pulses and set pulses, respectively, until the number of set pulses is equal to one and the target resistance of the on-chip resistor is reached.

    摘要翻译： 本发明包括用于将片上相变电阻器编程为目标电阻的方法和结构。 使用片外精密电阻器作为参考，状态机确定片上电阻器的电阻与目标电阻之间的差。 基于这种差异，状态机引导脉冲发生器将片上电阻器设置或复位脉冲施加到片上电阻器，以便根据需要分别降低或增加电阻器的电阻。 为了将相变电阻器的电阻编程为严格的公差，通过分别逐渐递减的复位脉冲数和设定脉冲数来连续复位和设置，直到设定脉冲数等于1，目标值 达到片上电阻的电阻。

    Dual layer etch stop barrier
    48.
    发明授权
    Dual layer etch stop barrier 失效

    公开(公告)号：US06548418B2

    公开(公告)日：2003-04-15

    申请号：US10158249

    申请日：2002-05-30

    申请人： Chung Hon Lam ,  Eric Seung Lee ,  Francis Roger White

    发明人： Chung Hon Lam ,  Eric Seung Lee ,  Francis Roger White

    IPC分类号： H01L21302

    CPC分类号： H01L21/0217 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/31116 ,  H01L21/3185 ,  Y10S438/97

    摘要： A method for reactive ion etching of SiO2 and an etch stop barrier for use in such an etching is provided. A silicon nitride (SixNy) barrier having a Six to Ny ratio (x:y) of less than about 0.8 and preferably the stoichiometric amount of 0.75 provides excellent resilience to positive mobile ion contamination, but poor etch selectivity. However, a silicon nitride barrier having a ratio of Six to Nx (x:y) of 1.0 or greater has excellent etch selectivity with respect to SiO2 but a poor barrier to positive mobile ion contamination. A barrier of silicon nitride is formed on a doped silicon substrate which barrier has two sections. One section has a greater etch selectivity with respect to silicon dioxide than the second section and the second section has a greater resistance to transmission of positive mobile ions than the first section. One section adjacent the silicon substrate has a silicon to nitrogen ratio of less than about 0.8. The second section, formed on top of the first section is formed with the ratio of the silicon to nitrogen of greater than about 0.8. Preferably the two sections together are from about 50 to about 100 nanometers thick.

    PCRAM with current flowing laterally relative to axis defined by electrodes
    50.
    发明授权
    PCRAM with current flowing laterally relative to axis defined by electrodes 有权
    PCRAM，其电流相对于由电极限定的轴线横向流动

    公开(公告)号：US09082954B2

    公开(公告)日：2015-07-14

    申请号：US13210020

    申请日：2011-08-15

    申请人： Hsiang-Lan Lung ,  Chung Hon Lam

    发明人： Hsiang-Lan Lung ,  Chung Hon Lam

    IPC分类号： G11C11/00 ,  H01L45/00

    CPC分类号： H01L45/06 ,  H01L45/1246 ,  H01L45/144 ,  H01L45/16

    摘要： An improved phase change memory device has a phase change structure including a thin part between a contact surface of an electrode and a dielectric structure. For example, the thin part has a maximum thickness that is smaller than a maximum width of the contact surface of the electrode. In another example, the phase change structure surrounds the dielectric structure. Several variations improve the contact between the phase change structure and an electrode.

    摘要翻译： 改进的相变存储器件具有包括电极的接触表面和电介质结构之间的薄部分的相变结构。 例如，薄部具有比电极的接触表面的最大宽度小的最大厚度。 在另一示例中，相变结构围绕电介质结构。 几种变化改善了相变结构和电极之间的接触。