公开(公告)号：US20050224780A1

公开(公告)日：2005-10-13

申请号：US11100455

申请日：2005-04-07

申请人： Young-gu Jin ,  Sung-hoon Lee ,  Hyo-sug Lee ,  Byoung-lyong Choi ,  Jong-seob Kim

发明人： Young-gu Jin ,  Sung-hoon Lee ,  Hyo-sug Lee ,  Byoung-lyong Choi ,  Jong-seob Kim

IPC分类号： H01L29/06 ,  H01L33/06 ,  H01L33/08 ,  H01L33/18

CPC分类号： H01L33/08 ,  B82Y10/00 ,  H01L33/06 ,  H01L33/18 ,  Y10S977/762

摘要： A nanowire light emitting device is provided. The nanowire light emitting device includes a substrate, a first conductive layer formed on the substrate, a plurality of nanowires vertically formed on the first conductive layer, each nanowire comprising a p-doped portion and an n-doped portion, a light emitting layer between the p-doped portion and the n-doped portion, a second conductive layer formed on the nanowires, and an insulating polymer in which a light emitting material is embedded, filling a space between the nanowires. The color of light emitted from the light emitting layer varies according to the light emitting material.

摘要翻译： 提供了一种纳米线发光器件。 纳米线发光器件包括衬底，形成在衬底上的第一导电层，垂直形成在第一导电层上的多个纳米线，每个纳米线包括p掺杂部分和n掺杂部分， p掺杂部分和n掺杂部分，形成在纳米线上的第二导电层和其中嵌入发光材料的绝缘聚合物，填充纳米线之间的空间。 从发光层发出的光的颜色根据发光材料而变化。

公开(公告)号：US06795457B2

公开(公告)日：2004-09-21

申请号：US09867709

申请日：2001-05-31

申请人： Young-jin Song ,  Seung-ho Nam ,  Byoung-lyong Choi ,  Jae-ho You

发明人： Young-jin Song ,  Seung-ho Nam ,  Byoung-lyong Choi ,  Jae-ho You

IPC分类号： H01S310

CPC分类号： H01S5/423 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18361 ,  H01S5/4087

摘要： A multiple wavelength surface-emitting laser device equipped with a substrate and a plurality of surface-emitting lasers formed on the substrate by a continuous manufacturing process is provided. Each surface-emitting laser includes a bottom reflection layer on the substrate, that is doped with impurities of one type and composed of alternating semiconductor material layers having different refractive indexes; an active layer that is formed on the bottom reflection layer; an intermediate layer that is doped with impurities of the other type on the active layer; a top electrode that is formed on the intermediate layer to have a window through which light is emitted; and a dielectric reflection layer where dielectric materials with different refractive indexes are alternately layered on the intermediate layer and/or the top electrode to a thickness suitable for a desired resonance wavelength, and the resonance wavelength is controlled by adjusting the thickness of the dielectric reflection layer.

摘要翻译： 提供了通过连续制造工艺配置有基板和形成在基板上的多个表面发射激光器的多波长表面发射激光器件。 每个表面发射激光器包括在衬底上的底部反射层，其掺杂了一种类型的杂质，并且由具有不同折射率的交替的半导体材料层组成; 形成在底部反射层上的有源层; 在活性层上掺杂另一种杂质的中间层; 形成在所述中间层上以具有通过其发出光的窗口的顶部电极; 以及介电反射层，其中具有不同折射率的电介质材料在中间层和/或顶部电极上交替层叠到适于所需共振波长的厚度，并且通过调节介电反射层的厚度来控制谐振波长 。

公开(公告)号：US08581230B2

公开(公告)日：2013-11-12

申请号：US12977195

申请日：2010-12-23

申请人： Tae-ho Kim ,  Chang-won Lee ,  Byoung-lyong Choi ,  Kyung-sang Cho

发明人： Tae-ho Kim ,  Chang-won Lee ,  Byoung-lyong Choi ,  Kyung-sang Cho

IPC分类号： H01L33/04

CPC分类号： H01L51/502 ,  H01L27/3211 ,  H01L51/5048 ,  H01L51/5262

摘要： A quantum dot light-emitting device includes a substrate, a first electrode, a hole injection layer (“HIL”), a hole transport layer (“HTL”), an emitting layer, an electron transport layer (“ETL”), a plurality of nanoplasmonic particles buried in the ETL, and a second electrode.

摘要翻译： 量子点发光装置包括基板，第一电极，空穴注入层（“HIL”），空穴传输层（“HTL”），发光层，电子传输层（“ETL”）， 埋在ETL中的多个纳米等离子体颗粒和第二电极。

公开(公告)号：US07863813B2

公开(公告)日：2011-01-04

申请号：US12010869

申请日：2008-01-30

申请人： Shang-hyeun Park ,  Byoung-lyong Choi

发明人： Shang-hyeun Park ,  Byoung-lyong Choi

IPC分类号： H05B33/00

CPC分类号： C09K11/612 ,  C09K11/642 ,  H01H13/83 ,  H01H2219/018 ,  H01H2219/052 ,  H01L51/502 ,  H05B33/14

摘要： An inorganic electroluminescence device including: a substrate; a first electrode formed on the substrate; an inorganic light emitting layer layer formed on the first electrode; a dielectric layer formed on the inorganic light emitting layer; a second electrode formed on the dielectric layer; and a quantun dot layer that is formed between the first electrode and the inorganic light emitting layer and emits light by being excited by visible light emitted from the inorganic light emitting layer.

摘要翻译： 一种无机电致发光器件，包括：基板; 形成在所述基板上的第一电极; 形成在第一电极上的无机发光层; 形成在无机发光层上的电介质层; 形成在所述电介质层上的第二电极; 以及形成在第一电极和无机发光层之间的量子点层，并且通过由无机发光层发射的可见光激发而发光。

公开(公告)号：US07750984B2

公开(公告)日：2010-07-06

申请号：US11812437

申请日：2007-06-19

申请人： Kyoung-ho Ha ,  Byoung-lyong Choi ,  Jae-ho Lee

发明人： Kyoung-ho Ha ,  Byoung-lyong Choi ,  Jae-ho Lee

IPC分类号： G02F1/135 ,  G02F1/1335

CPC分类号： G02B6/0056 ,  G02F1/133617

摘要： Provided is a photoluminescence liquid crystal display (LCD) using a light source emitting polarized light. The photoluminescence LCD may include a light source emitting polarized light, a light control unit including a liquid crystal layer having a plurality of pixel regions and modulating a polarization direction of the polarized light individually with respect to each of the pixel regions, a polarizer transmitting the modulated light only when the polarized light has a polarization direction, and a photoluminescence layer excited by the light transmitted through the polarizer and emitting excitation light by photoluminescence. Accordingly, an additional polarizer may not be on a rear surface of the light control unit, so that photoluminescence LCD may have a simpler structure and increased light use efficiency.

摘要翻译： 提供了使用发射偏振光的光源的光致发光液晶显示器（LCD）。 光致发光LCD可以包括发射偏振光的光源，包括具有多个像素区域的液晶层并相对于每个像素区域分别调制偏振光的偏振方向的光控制单元， 仅当偏振光具有偏振方向时才产生调制光，并且由穿过偏振器的光激发的光致发光层和通过光致发光发射激发光。 因此，附加的偏振器可以不在光控制单元的后表面上，使得光致发光LCD可以具有更简单的结构和增加的光使用效率。

公开(公告)号：US20080055515A1

公开(公告)日：2008-03-06

申请号：US11812437

申请日：2007-06-19

申请人： Kyoung-ho Ha ,  Byoung-lyong Choi ,  Jae-ho Lee

发明人： Kyoung-ho Ha ,  Byoung-lyong Choi ,  Jae-ho Lee

IPC分类号： G02F1/13357 ,  G02F1/1335

CPC分类号： G02B6/0056 ,  G02F1/133617

摘要： Provided is a photoluminescence liquid crystal display (LCD) using a light source emitting polarized light. The photoluminescence LCD may include a light source emitting polarized light, a light control unit including a liquid crystal layer having a plurality of pixel regions and modulating a polarization direction of the polarized light individually with respect to each of the pixel regions, a polarizer transmitting the modulated light only when the polarized light has a polarization direction, and a photoluminescence layer excited by the light transmitted through the polarizer and emitting excitation light by photoluminescence. Accordingly, an additional polarizer may not be on a rear surface of the light control unit, so that photoluminescence LCD may have a simpler structure and increased light use efficiency.

摘要翻译： 提供了使用发射偏振光的光源的光致发光液晶显示器（LCD）。 光致发光LCD可以包括发射偏振光的光源，包括具有多个像素区域的液晶层并相对于每个像素区域分别调制偏振光的偏振方向的光控制单元， 仅当偏振光具有偏振方向时才产生调制光，并且由穿过偏振器的光激发的光致发光层和通过光致发光发射激发光。 因此，附加的偏振器可以不在光控制单元的后表面上，使得光致发光LCD可以具有更简单的结构和增加的光使用效率。

公开(公告)号：US20070054445A1

公开(公告)日：2007-03-08

申请号：US11240473

申请日：2005-10-03

申请人： Hoon Kim ,  In-jae Song ,  Won-joo Kim ,  Byoung-lyong Choi

发明人： Hoon Kim ,  In-jae Song ,  Won-joo Kim ,  Byoung-lyong Choi

IPC分类号： H01L21/338 ,  H01L21/461

CPC分类号： H01L21/8238 ,  H01L21/3212 ,  H01L33/08 ,  H01L33/24 ,  Y10S977/755 ,  Y10S977/758 ,  Y10S977/773

摘要： Provided is a method of manufacturing a nano scale semiconductor device, such as a nano scale P-N junction device or a CMOS using nano particles without using a mask or a fine pattern. The method includes dispersing uniformly a plurality of nano particles on a semiconductor substrate, forming an insulating layer covering the nano particles on the semiconductor substrate, partly removing the upper surfaces of the nano particles and the insulating layer, selectively removing the nano particles from the insulating layer, and partly forming doped semiconductor layers in the semiconductor substrate by partly doping the semiconductor substrate through spaces formed by removing the nano particles.

摘要翻译： 提供了一种使用纳米级P-N结器件或使用纳米颗粒的CMOS而不使用掩模或精细图案的纳米级半导体器件的制造方法。 该方法包括在半导体衬底上均匀分散多个纳米颗粒，形成覆盖半导体衬底上的纳米颗粒的绝缘层，部分去除纳米颗粒和绝缘层的上表面，从绝缘体中选择性地除去纳米颗粒 层，并且通过部分地通过去除纳米颗粒形成的空间将半导体衬底部分地掺杂在半导体衬底中部分地形成掺杂半导体层。

公开(公告)号：US20060113552A1

公开(公告)日：2006-06-01

申请号：US11285192

申请日：2005-11-23

申请人： In-jae Song ,  Byoung-lyong Choi

发明人： In-jae Song ,  Byoung-lyong Choi

IPC分类号： G05B15/00 ,  H01L21/00 ,  H01L33/00

CPC分类号： H01L33/0058 ,  H01L27/14601 ,  H01L27/14645 ,  H01L27/14689 ,  H01L27/14698 ,  H01L27/156 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of manufacturing a silicon optoelectronic device, a silicon optoelectronic device manufactured by the method and an image input and/or output apparatus having the silicon optoelectronic device are provided. The method includes: preparing an n-type or a p-type silicon-based substrate; forming a polysilicon having a predetermined depth at one or more predetermined regions of a surface of the substrate in order to form a microdefect flection pattern having a desired microcavity length; oxidizing the surface of the substrate where the polysilicon is formed for forming a silicon oxidation layer on the substrate and forming a microdefect flection pattern having a desired microcavity length at an interface between the substrate and the silicon oxidation layer, wherein the microdefect flection pattern is formed by a difference between an oxidation rate of the polysilicon and an oxidation rate of a material of the substrate during formation of the silicon oxidation layer; exposing the microdefect flection pattern by etching a region of the silicon oxidation layer where the polysilicon is formed; and forming a doping region by doping the exposed microdefect flection pattern in a type opposite to a type of the substrate.