公开(公告)号：US20220244430A1

公开(公告)日：2022-08-04

申请号：US17627680

申请日：2020-07-22

Applicant: Young Jin SONG

Inventor： Young Jin SONG ,  Chang Kwon HWANGBO

IPC: G02B1/115 ,  G02B5/28 ,  C23C14/22

Abstract: Disclosed is an optical filter that has a high refractive index and low extinction coefficient characteristics in a narrowband of approximately 800 nm-1100 nm, and a sensor system comprising the same.

公开(公告)号：US20080093995A1

公开(公告)日：2008-04-24

申请号：US11813064

申请日：2005-10-18

Applicant: Young Jin Song

Inventor： Young Jin Song

IPC: H05B41/24

CPC classification number: H05B41/2885 ,  H05B41/2881 ,  Y02B20/202

Abstract: A multi-lamp electronic ballast for a high intensity discharge lamp is provided. The multi-lamp electronic ballast includes a first igniter connected to the inverter unit to induce a high voltage from a current input from the inverter unit and to apply the high voltage to the first lamp and a second igniter having the one side end connected to the inverter unit and the other side end connected in parallel to a second lamp.

Abstract translation: 提供了一种用于高强度放电灯的多灯电子镇流器。 多灯电子镇流器包括连接到逆变器单元的第一点火器，以从来自逆变器单元的电流输入引起高电压并将高电压施加到第一灯，以及第二点火器，其一侧端连接到 逆变器单元，另一侧端与第二灯并联连接。

公开(公告)号：US5604138A

公开(公告)日：1997-02-18

申请号：US357961

申请日：1994-12-15

Applicant: Chang-Jae Lee ,  Young-Jin Song

Inventor： Chang-Jae Lee ,  Young-Jin Song

IPC: H01L21/28 ,  H01L21/336 ,  H01L21/469 ,  H01L29/78 ,  H01L21/8234

CPC classification number: H01L29/6659 ,  H01L21/28123

Abstract: A process for forming an MOS semiconductor device having an LDD structure is disclosed, which may include the steps of: forming a first insulating layer on a semiconductor substrate; forming a conductive layer on the first insulating layer; forming a second insulating layer on the conductive layer; forming a third insulating layer on the second insulating layer; forming an etch inhibiting layer pattern for forming an over-sized gate on a relevant area of the second insulating layer; removing the second and third insulating layers and the conductive layer excluding the portions protected from the etch inhibiting layer, so as to form a stacked pattern consisting of the residual second insulating layer/the third insulating layer/the conductive layer; forming a first impurity ion buried layer on a relevant portion of the semiconductor substrate utilizing the stacked pattern for formation of a source/drain region; removing the etch inhibiting layer; removing an edge portion of the remaining second insulating layer of the stacked pattern for forming the final gate; removing the residual third insulating layer of the stacked pattern; etching the residual conductive layer by using the partly removed second insulating layer as the mask to form the final gate; forming a second impurity ion buried layer on the relevant portion of the semiconductor substrate for forming the LDD structure; forming a fourth insulating layer on the whole surface of the wafer; and activating the first and second ion buried layers.

Abstract translation: 公开了一种用于形成具有LDD结构的MOS半导体器件的工艺，其可以包括以下步骤：在半导体衬底上形成第一绝缘层; 在所述第一绝缘层上形成导电层; 在所述导电层上形成第二绝缘层; 在所述第二绝缘层上形成第三绝缘层; 形成用于在所述第二绝缘层的相关区域上形成超大尺寸栅极的蚀刻抑制层图案; 除去不受蚀刻抑制层保护的部分的第二绝缘层和第三绝缘层和导电层，以形成由残留的第二绝缘层/第三绝缘层/导电层组成的层叠图案; 使用用于形成源极/漏极区域的堆叠图案在半导体衬底的相关部分上形成第一杂质离子掩埋层; 去除蚀刻抑制层; 去除用于形成最终栅极的层叠图案的剩余第二绝缘层的边缘部分; 去除堆叠图案的残余第三绝缘层; 通过使用部分去除的第二绝缘层作为掩模来蚀刻残留导电层以形成最终栅极; 在所述半导体衬底的相关部分上形成第二杂质离子掩埋层以形成所述LDD结构; 在晶片的整个表面上形成第四绝缘层; 并激活第一和第二离子掩埋层。

公开(公告)号：US5966987A

公开(公告)日：1999-10-19

申请号：US47383

申请日：1998-03-25

Applicant: Yeung-lyul Yoon ,  Tae-san Jung ,  Young-jin Song

Inventor： Yeung-lyul Yoon ,  Tae-san Jung ,  Young-jin Song

IPC: G02B6/26 ,  G02B6/00 ,  G02B6/34 ,  G02B6/36 ,  G02B7/00 ,  H04B10/00 ,  H04B10/27 ,  H04B10/29 ,  F16H25/20

CPC classification number: G02B6/29361 ,  G02B26/007 ,  G02B6/29389 ,  G02B6/29395 ,  Y10T74/18576 ,  Y10T74/18936 ,  Y10T74/20504

Abstract: A controlling device of a tunable filter includes a base, a tunable filter on the base along an optical path between first and second optical fibers, a holder rotatably installed on the base to support the tunable filter, a driving unit installed on the base for providing a rotational force, a speed reducing device, and a rotating unit for rotating the holder in accordance with the linear movement of the movable member. The speed reducing device has a worm gear extending from a rotating shaft of the driving unit, and a movable member provided with a threaded hole engaged with the worm gear to allow reciprocal movement along the worm gear according to the rotation direction of the worm gear.

Abstract translation: 可调谐滤波器的控制装置包括基座，沿着第一和第二光纤之间的光路的底座上的可调滤波器，可旋转地安装在基座上以支撑可调谐滤波器的保持器，安装在基座上的驱动单元，用于提供 旋转力，减速装置和旋转单元，用于根据可动构件的线性运动来旋转保持器。 减速装置具有从驱动单元的旋转轴延伸的蜗轮，以及具有与蜗轮啮合的螺纹孔的可动部件，能够根据蜗轮的旋转方向沿蜗轮往复运动。

公开(公告)号：US5891810A

公开(公告)日：1999-04-06

申请号：US773175

申请日：1996-12-27

Applicant: Nae-Hak Park ,  Yun-Hee Kim ,  Young-Jin Song

Inventor： Nae-Hak Park ,  Yun-Hee Kim ,  Young-Jin Song

IPC: H01L21/31 ,  C23C16/40 ,  C23C16/452 ,  C23C16/52 ,  H01L21/316 ,  H01L21/469

CPC classification number: H01L21/02164 ,  C23C16/401 ,  C23C16/452 ,  C23C16/52 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/31612 ,  H01L21/31625

Abstract: A method and apparatus for controlling the amount of ozone concentration in the layers of a film depositing system and the multi-layered structure produced thereby, whereby the concentration of ozone in each layer gradually changes from a low ozone concentration in the first deposited layer to a high ozone concentration in the last deposited layer.

Abstract translation: 一种用于控制膜沉积系统的层中的臭氧浓度的量和由此产生的多层结构的方法和装置，由此各层中的臭氧浓度从第一沉积层中的低臭氧浓度逐渐变为 最后沉积层中的高臭氧浓度。

公开(公告)号：US6004397A

公开(公告)日：1999-12-21

申请号：US238067

申请日：1999-01-27

Applicant: Nae-Hak Park ,  Yun-Hee Kim ,  Young-Jin Song

Inventor： Nae-Hak Park ,  Yun-Hee Kim ,  Young-Jin Song

IPC: H01L21/316 ,  C23C16/00

CPC classification number: H01L21/02126 ,  H01L21/02271 ,  H01L21/31662

Abstract: A method and apparatus for controlling the amount of ozone concentration in the layers of a film depositing system and the multi-layered structure produced thereby, whereby the concentration of ozone in each layer gradually changes from a low ozone concentration in the first deposited layer to a high ozone concentration in the last deposited layer.

Abstract translation: 一种用于控制膜沉积系统的层中的臭氧浓度的量和由此产生的多层结构的方法和装置，由此各层中的臭氧浓度从第一沉积层中的低臭氧浓度逐渐变为 最后沉积层中的高臭氧浓度。

公开(公告)号：US5882534A

公开(公告)日：1999-03-16

申请号：US443398

申请日：1995-05-17

Applicant: Young Jin Song

Inventor： Young Jin Song

IPC: G03F1/28 ,  G03F1/30 ,  H01L21/027 ,  G03F1/00

CPC classification number: G03F1/28 ,  G03F1/30

Abstract: A multistage phase shift mask includes a light transmissive substrate having light shielding regions and light transmissive regions. A shielding layer is disposed on the shielding regions of the substrate and a phase shifter layer extends over the light transmissive regions between a pair of the shielding regions. A first etched portion on the substrate is adjacent to the phase shifter layer that contacts with the substrate and a second etched portion on the substrate is between the phase shifter layer and the first etched portion of the substrate.The second etched portion consists of a gradual concave slope allowing a phase shift from approximately 0 to 180 degrees.

Abstract translation: 多级相移掩模包括具有遮光区域和透光区域的透光基板。 屏蔽层设置在衬底的屏蔽区域上，并且移相器层在一对屏蔽区域之间的透光区域上延伸。 衬底上的第一蚀刻部分与与衬底接触的移相器层相邻，衬底上的第二蚀刻部分位于衬底的移相器层和第一蚀刻部分之间。 第二蚀刻部分由允许相位从大约0到180度的渐变凹斜面组成。

公开(公告)号：US5869375A

公开(公告)日：1999-02-09

申请号：US796038

申请日：1997-02-05

Applicant: Jong-Moon Choi ,  Young Jin Song ,  Chang Reol Kim

Inventor： Jong-Moon Choi ,  Young Jin Song ,  Chang Reol Kim

IPC: H01L29/78 ,  H01L21/336 ,  H01L29/423 ,  H01L29/739

CPC classification number: H01L29/78 ,  H01L29/66628

Abstract: A method for fabricating a transistor includes the steps of forming a gate insulation film on a substrate, forming a gate electrode on the gate insulation film and forming a first insulation film pattern on the gate electrode. A side wall spacer is formed at side surfaces of the first insulation film pattern and the gate electrode. The gate insulation film is etched to expose a portion of a surface of the substrate. An epitaxial layer is formed on the substrate where the gate insulation film is etched. The side wall spacer is removed and a thermal oxide film is grown on a portion corresponding to where the side wall spacer is removed and on an upper portion of the epitaxial layer. A source/drain region is formed by ion-implanting an impurity into the epitaxial layer.

Abstract translation: 一种制造晶体管的方法包括以下步骤：在衬底上形成栅极绝缘膜，在栅极绝缘膜上形成栅电极，并在栅电极上形成第一绝缘膜图案。 在第一绝缘膜图案和栅电极的侧表面处形成侧壁间隔物。 蚀刻栅极绝缘膜以暴露基板表面的一部分。 在栅极绝缘膜被蚀刻的基板上形成外延层。 除去侧壁间隔物，并且在与去除侧壁间隔物的部分相对应的部分上和在外延层的上部上生长热氧化膜。 通过将杂质离子注入到外延层中形成源/漏区。

公开(公告)号：US5700626A

公开(公告)日：1997-12-23

申请号：US673476

申请日：1996-07-01

Applicant: Jun Seok Lee ,  Hun Hur ,  Young Jin Song

Inventor： Jun Seok Lee ,  Hun Hur ,  Young Jin Song

IPC: G03F7/26 ,  G03F7/00 ,  G03F7/09 ,  H01L21/027 ,  H01L21/30

CPC classification number: G03F7/094 ,  G03F7/0035 ,  Y10S430/143 ,  Y10S438/949 ,  Y10S438/95

Abstract: A method for forming a multi-layer resist (MLR) pattern capable of preventing a generation of a charge-up effect in an exposure to electron beams and reducing alignment detect errors, and employing a silylation process, thereby achieving an improvement in resonance. The method includes the steps of forming a primary alignment mark on a silicon substrate formed with a cell part including a plurality of cell patterns having steps, depositing a lower deposition film over the silicon substrate, coating a lower resist film over the lower deposition film, subjecting a portion of the lower resist film to a light exposure and a development to form a secondary alignment mark, forming an intermediate insulating layer over the lower resist film, coating an upper resist film over the intermediate insulating layer to form a MLR film, subjecting the upper resist film to a light exposure to fork a latent image pattern at a non-exposed portion of the upper resist film, subjecting the resulting structure to a silylation to form a silylated layer over the upper resist film, etching the upper resist film to form an upper resist pattern and removing the silylated layer, patterning the intermediate insulating layer by use of the upper resist pattern as a mask, and etching the lower resist film by use of the intermediate insulating layer as a mask, thereby forming a MLR pattern.

Abstract translation: 一种用于形成能够防止在电子束曝光中产生电荷效应并降低取向检测误差的多层抗蚀剂（MLR）图案的方法，并且采用甲硅烷化处理，从而实现共振的改善。 该方法包括以下步骤：在形成有包括多个单元图案的单元部分的硅衬底上形成主对准标记，该步骤包括在硅衬底上沉积下沉积膜，在下沉积膜上涂覆下抗蚀膜， 使下部抗蚀剂膜的一部分曝光和显影以形成二次对准标记，在下部抗蚀剂膜上形成中间绝缘层，在中间绝缘层上涂覆上部抗蚀剂膜以形成MLR膜， 上抗蚀剂膜曝光以在上抗蚀剂膜的未曝光部分处分散潜像图案，使所得结构进行甲硅烷基化以在上抗蚀剂膜上形成甲硅烷基化层，将上抗蚀剂膜蚀刻至 形成上抗蚀剂图案并除去甲硅烷基化层，通过使用上抗蚀剂图案作为掩模等将中间绝缘层图案化等 通过使用中间绝缘层作为掩模来将下抗蚀剂膜铰接，由此形成MLR图案。

公开(公告)号：US06795457B2

公开(公告)日：2004-09-21

申请号：US09867709

申请日：2001-05-31

Applicant: Young-jin Song ,  Seung-ho Nam ,  Byoung-lyong Choi ,  Jae-ho You

Inventor： Young-jin Song ,  Seung-ho Nam ,  Byoung-lyong Choi ,  Jae-ho You

IPC: H01S310

CPC classification number: H01S5/423 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18361 ,  H01S5/4087

Abstract: A multiple wavelength surface-emitting laser device equipped with a substrate and a plurality of surface-emitting lasers formed on the substrate by a continuous manufacturing process is provided. Each surface-emitting laser includes a bottom reflection layer on the substrate, that is doped with impurities of one type and composed of alternating semiconductor material layers having different refractive indexes; an active layer that is formed on the bottom reflection layer; an intermediate layer that is doped with impurities of the other type on the active layer; a top electrode that is formed on the intermediate layer to have a window through which light is emitted; and a dielectric reflection layer where dielectric materials with different refractive indexes are alternately layered on the intermediate layer and/or the top electrode to a thickness suitable for a desired resonance wavelength, and the resonance wavelength is controlled by adjusting the thickness of the dielectric reflection layer.

Abstract translation: 提供了通过连续制造工艺配置有基板和形成在基板上的多个表面发射激光器的多波长表面发射激光器件。 每个表面发射激光器包括在衬底上的底部反射层，其掺杂了一种类型的杂质，并且由具有不同折射率的交替的半导体材料层组成; 形成在底部反射层上的有源层; 在活性层上掺杂另一种杂质的中间层; 形成在所述中间层上以具有通过其发出光的窗口的顶部电极; 以及介电反射层，其中具有不同折射率的电介质材料在中间层和/或顶部电极上交替层叠到适于所需共振波长的厚度，并且通过调节介电反射层的厚度来控制谐振波长 。