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    Multiphase selectors
    42.
    发明授权
    Multiphase selectors 有权

    公开(公告)号：US09911915B2

    公开(公告)日：2018-03-06

    申请号：US15318089

    申请日：2014-07-29

    Applicant: Hewlett Packard Enterprise Development LP

    Inventor： Jianhua Yang ,  Yoocharn Jeon ,  Hans S. Cho

    IPC: H01L45/00 ,  H01L27/24

    CPC classification number: H01L45/146 ,  H01L27/2418 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/165

    Abstract: A multiphase selector includes a first electrode, a switching layer coupled to the first electrode, a capping layer coupled to the switching layer, and a second electrode coupled to the capping layer. The switching layer may include a matrix having a first, relatively insulating phase of a transition metal oxide; a second, relatively conducting phase of the transition metal oxide dispersed in the matrix; and a catalyst, located within the matrix, to interact with the first phase of the transition metal oxide to selectively form and position the second phase of the transition metal oxide within the matrix.

    ASYMMETRICALLY SELECTING MEMORY ELEMENTS
    45.
    发明申请
    ASYMMETRICALLY SELECTING MEMORY ELEMENTS 有权

    公开(公告)号：US20170200493A1

    公开(公告)日：2017-07-13

    申请号：US15320779

    申请日：2014-07-25

    Applicant: Hewlett Packard Enterprise Development LP

    Inventor： Kyung Min Kim ,  Jianhua Yang ,  Zhiyong Li

    IPC: G11C13/00

    CPC classification number: G11C13/003 ,  G11C2013/0073 ,  G11C2213/72

    Abstract: A system for asymmetrically selecting a memory element is described. The system includes a number of memory cells in a crossbar array. Each memory cell includes a memory element to store information. The memory element is defined as an intersection between a column electrode and a row electrode of the crossbar array. Each memory cell also includes a selector to select a target memory element by relaying a first selecting voltage to a column electrode that corresponds to the target memory element and relaying a second selecting voltage to a row electrode that corresponds to the target memory element. The system also includes a controller to pass a first standing voltage to column electrodes of the crossbar array and to pass a second standing voltage to row electrodes of the crossbar array. The first standing voltage is different than the second standing voltage.

    Multilayered memristors
    48.
    发明授权
    Multilayered memristors 有权

    公开(公告)号：US10026896B2

    公开(公告)日：2018-07-17

    申请号：US15500050

    申请日：2015-02-13

    Applicant: Hewlett Packard Enterprise Development LP

    Inventor： Warren Jackson ,  Jianhua Yang ,  Kyung Min Kim ,  Zhiyong Li

    IPC: H01L45/00 ,  H01L27/24 ,  G11C13/00

    Abstract: A multilayered memristor includes a semiconducting n-type layer, a semiconducting p-type layer, and a semiconducting intrinsic layer. The semiconducting n-type layer includes one or both of anion vacancies and metal cations. The semiconducting p-type layer includes one or both of metal cation vacancies and anions. The semiconducting intrinsic layer is coupled between the n-type layer and the p-type layer to form an electrical series connection through the n-type layer, the intrinsic layer, and the p-type layer.

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