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    LASER TREATMENT DEVICE
    41.
    发明申请
    LASER TREATMENT DEVICE 审中-公开
    激光治疗装置

    公开(公告)号：US20090326617A1

    公开(公告)日：2009-12-31

    申请号：US12482518

    申请日：2009-06-11

    Applicant: Hideki Asano

    Inventor： Hideki Asano

    IPC: A61N5/06

    CPC classification number: A61B5/02007 ,  A61B8/08 ,  A61B18/20 ,  A61B2017/0011 ,  A61B2017/22001 ,  A61B2018/00636 ,  A61B2018/00904 ,  A61B2018/2266 ,  A61B2090/378

    Abstract: There is provided a laser treatment device including: an image acquisition section that acquires an image of a treatment region including a lipid component inside a living body and surroundings of the treatment region; a position acquisition section that acquires a position of the treatment region in an optical axis direction of laser light, on the basis of image data of the image acquired by the image acquisition section; an irradiation section that irradiates laser light with a wavelength from 1201 nm to 1227 nm at the treatment region from outside the body; and a focusing section that focuses the laser light irradiated from the irradiation section at the position of the treatment region acquired by the position acquisition section.

    Abstract translation: 提供了一种激光治疗装置，包括：图像获取部，其获取生物体内部的脂质成分和处理区域的周围的处理区域的图像; 基于由图像获取部获取的图像的图像数据，获取处理区域在激光的光轴方向上的位置的位置获取部; 照射部，其从处于身体外部的处理区域照射波长为1201nm〜1227nm的激光; 以及聚焦部，其将从所述照射部照射的激光聚焦在由所述位置获取部获取的所述处理区域的位置。

    Semiconductor laser apparatus
    43.
    发明申请
    Semiconductor laser apparatus 审中-公开
    半导体激光装置

    公开(公告)号：US20060088072A1

    公开(公告)日：2006-04-27

    申请号：US11255932

    申请日：2005-10-24

    Applicant: Toshiro Hayakawa ,  Hideki Asano ,  Shinichi Nagahama ,  Yuji Matsuyama ,  Katsutoshi Komoto

    Inventor： Toshiro Hayakawa ,  Hideki Asano ,  Shinichi Nagahama ,  Yuji Matsuyama ,  Katsutoshi Komoto

    IPC: H01S5/00

    CPC classification number: B82Y20/00 ,  H01S5/22 ,  H01S5/34333

    Abstract: A GaN system stripe type semiconductor laser having an index guiding structure, and producing higher mode or multimode oscillation in the transverse mode, which is constructed such that the horizontal beam radiation angle of each of a plurality of the emitting regions is minimized to provide a high luminance focused beam. In a GaN system stripe type semiconductor laser, which has an index guiding structure constituted, for example, by a ridge structure formed on a p-GaN cap layer 28 and p-Al0.1Ga0.9N clad layer 27 with the width W2, and produces higher mode or multimode oscillation in the transverse mode, the effective index difference Δn between the central region of the stripe and outside of the stripe is set not greater than 1.5×10−2.

    Abstract translation: 一种具有折射率引导结构的GaN系带条型半导体激光器，在横模中产生较高模式或多模振荡，其结构使得多个发射区域中的每一个的水平射束辐射角最小化以提供高 亮度聚焦光束。 在GaN系带状半导体激光器中，其具有例如由p-GaN覆盖层28和p-Al 0.1 Ga 0.9形成的脊结构构成的折射引导结构 具有宽度W 2的N包覆层27，并且在横向模式中产生较高模式或多模式振荡，条纹的中心区域和条纹外部之间的有效折射率差Deltan被设置为不大于1.5×10 -2 。

    Second-harmonic generation device using semiconductor laser element having quantum-well active layer in which resonator length and mirror loss are arranged to increase width of gain peak
    45.
    发明授权
    Second-harmonic generation device using semiconductor laser element having quantum-well active layer in which resonator length and mirror loss are arranged to increase width of gain peak 失效
    使用具有量子阱有源层的半导体激光元件的二次谐波发生器件，其中布置了谐振器长度和镜面损耗以增加增益峰值的宽度

    公开(公告)号：US07016384B2

    公开(公告)日：2006-03-21

    申请号：US10386528

    申请日：2003-03-13

    Applicant: Hideki Asano

    Inventor： Hideki Asano

    IPC: H01S5/00 ,  H01S3/10 ,  H01S3/13

    CPC classification number: B82Y20/00 ,  H01S5/1039 ,  H01S5/141 ,  H01S5/2081 ,  H01S5/3211 ,  H01S5/34313

    Abstract: A second-harmonic generation device includes a semiconductor laser element which has a quantum-well active layer, a wavelength control means which controls the wavelength of the light emitted from an end facet of the semiconductor laser element, an optical system which returns to the semiconductor laser element the light the wavelength of which is controlled by the wavelength control means, and a wavelength conversion element which is directly coupled to the other end facet of the semiconductor laser element, and converts the wavelength of the light controlled by the wavelength control means, to a half wavelength. The semiconductor laser element has a resonator length equal to or greater than 900 micrometers and a mirror loss equal to or greater than 16 cm−1.

    Abstract translation: 二次谐波发生装置包括具有量子阱活性层的半导体激光元件，控制从半导体激光元件的端面发射的光的波长的波长控制装置，返回到半导体的光学系统 激光元件，其波长由波长控制装置控制的光，以及直接耦合到半导体激光元件的另一端面的波长转换元件，并且转换由波长控制装置控制的光的波长， 到一半的波长。 半导体激光元件的谐振器长度等于或大于900微米，镜面损耗等于或大于16cm -1。

    Semiconductor laser
    46.
    发明授权
    Semiconductor laser 有权
    半导体激光器

    公开(公告)号：US06285695B1

    公开(公告)日：2001-09-04

    申请号：US09246946

    申请日：1999-02-09

    Applicant: Hideki Asano ,  Mitsugu Wada ,  Toshiaki Fukunaga

    Inventor： Hideki Asano ,  Mitsugu Wada ,  Toshiaki Fukunaga

    IPC: H01S500

    CPC classification number: B82Y20/00 ,  H01S5/2004 ,  H01S5/34 ,  H01S5/3403 ,  H01S5/3406 ,  H01S5/343 ,  H01S5/34313

    Abstract: A semiconductor laser includes a first clad layer having one of p-type conductivity and n-type conductivity, a first optical waveguide layer, a first barrier layer of GaAs1-y2Py2, a quantum-well active layer of Inx3Ga1-x3As1-y3Py3, a second barrier layer of GaAs1-y2Py2, a second optical waveguide layer and a second clad layer having the of p-type conductivity and n-type conductivity formed in this order on a GaAs substrate. Each of the first and second clad layers is of a composition which matches with the GaAs substrate in lattice. Each of the first and second optical waveguide layers is of a InGaAsP composition which matches with the GaAs substrate in lattice. Each of the first and second barrier layers is 10 to 30 nm in thickness and is of a composition which has tensile strain relative to the GaAs substrate, the product of the tensile strain and the thickness of each of the first and second barrier layers being 5 to 20% nm. The quantum-well active layer is 6 to 10 nm in thickness and is of a composition which has compressive strain of not smaller than 1.0% relative to the GaAs substrate. The sum of the product of the tensile strain and the thickness of the first barrier layer and that of the second barrier layer is larger than the product of the compressive strain and the thickness of the quantum-well active layer.

    Abstract translation: 半导体激光器包括具有p型导电性和n型导电性中的一种的第一覆盖层，第一光波导层，GaAs1-y2Py2的第一势垒层，In x3Ga1-x3As1-y3Py3的量子阱有源层， GaAs1-y2Py2的第二阻挡层，在GaAs衬底上依次形成具有p型导电性和n型导电性的第二光波导层和第二覆盖层。 第一和第二包覆层中的每一个具有与GaAs衬底相匹配的组成。 第一和第二光波导层中的每一个都是与GaAs衬底匹配的InGaAsP组成。 第一和第二阻挡层中的每一个的厚度为10至30nm，并且具有相对于GaAs衬底的拉伸应变的组成，第一和第二阻挡层中的每一个的拉伸应变和厚度的乘积为5 至20％nm。 量子阱有源层的厚度为6〜10nm，相对于GaAs衬底具有不小于1.0％的压缩应变的组成。 第一阻挡层和第二阻挡层的拉伸应变和厚度的乘积的总和大于量子阱活性层的压缩应变和厚度的乘积。

    Permanent magnet type linear pulse motor
    47.
    发明授权
    Permanent magnet type linear pulse motor 失效
    永磁式线性脉冲电机

    公开(公告)号：US4945268A

    公开(公告)日：1990-07-31

    申请号：US288123

    申请日：1988-12-22

    Applicant: Hideki Nihei ,  Kunio Miyashita ,  Hideki Asano

    Inventor： Hideki Nihei ,  Kunio Miyashita ,  Hideki Asano

    IPC: H02K41/03

    CPC classification number: H02K41/03

    Abstract: The A phase stator and the A phase stator are opposed each other winding same phase coil thereat. The B phase stator and the B phase stator are opposed each other winding same phase coil thereat. The A phase stator and the A phase stator, and the B phase stator and the B phase stator sandwich the mover, respectively. The mover fixes the permanent magnets having small magnetized pitch on the both surfaces thereof. The permanent magnets on both surfaces of the mover comprises the first permanent magnets and the second permanent magnets. The first permanent magnets having one polarity and a predetermined interval each other along the longitudinal direction of the mover are fixed previously on the mover. The second permanent magnets are inserted to the intervals on the mover.

    Abstract translation: A相定子和＆amp; upbar＆A相定子在其上相互缠绕相同的相线圈。 B相定子和＆amp; B和B相定子在其上相互缠绕相同的相线圈。 A相定子和＆amp; A和A相定子，B相定子和＆amp; B和B相定子分别夹住移动器。 移动器在其两个表面上固定具有小的磁化间距的永磁体。 动子的两个表面上的永磁体包括第一永磁体和第二永磁体。 具有一个极性并且沿着移动件的纵向方向彼此预定间隔的第一永磁体预先固定在移动件上。 第二永久磁铁被插入移动器上的间隔。

    Molded part and method of making the same
    49.
    发明授权
    Molded part and method of making the same 失效
    成型件及其制作方法

    公开(公告)号：US4728557A

    公开(公告)日：1988-03-01

    申请号：US375584

    申请日：1982-05-06

    Applicant: Hideki Asano ,  Morimichi Umino ,  Masanori Nemoto

    Inventor： Hideki Asano ,  Morimichi Umino ,  Masanori Nemoto

    IPC: B29C45/00 ,  B29C35/00 ,  B29C45/14 ,  B29C45/26 ,  B32B3/10

    CPC classification number: B29C45/14344 ,  Y10T428/24331 ,  Y10T428/24347

    Abstract: A molded part including a metal plate formed with a plurality of through holes, a plurality of resin portions connected to a resin filled in the through holes and protruding on opposite sides of the metal plate, the resin portions having a planar cross section larger than a cross section of the through holes, and a plurality of resin components each integrally formed with one of the resin portions. The resin components are secured in place on the metal plate separate from and independent of each other by virtue of residual thermal stress produced by the difference in the coefficient of thermal expansion between the resin portions and the metal plate in such a manner that a radially oriented residual thermal stress in each resin portion is symmetrical with respect to a center axis of one of the resin components.

    Abstract translation: 一种模制部件，包括形成有多个通孔的金属板，多个树脂部分连接到填充在通孔中并在金属板的相对侧上突出的树脂，树脂部分具有大于 通孔的横截面，以及与树脂部中的一个一体形成的多个树脂部件。 由于由树脂部分和金属板之间的热膨胀系数的差异产生的残余热应力，树脂部件被固定在金属板上的位置上并且彼此独立，使得径向定向 每个树脂部分中的残余热应力相对于一个树脂部件的中心轴对称。

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