公开(公告)号：US20070032054A1

公开(公告)日：2007-02-08

申请号：US11199593

申请日：2005-08-08

申请人： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

发明人： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

IPC分类号： H01L21/26

CPC分类号： H01L21/0276 ,  C23C16/26 ,  C23C16/507 ,  H01J37/321 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/268 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/32139 ,  Y10S430/151

摘要： A method of processing a thin film structure on a semiconductor substrate using an optically writable mask includes placing the substrate in a reactor chamber, the substrate having on its surface a target layer to be etched in accordance with a predetermined pattern, and depositing a carbon-containing hard mask layer on the substrate by (a) introducing a carbon-containing process gas into the chamber, (b) generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of the reentrant path, and (c) coupling RF plasma bias power or bias voltage to the workpiece. The method further includes photolithographically defining the predetermined pattern in the carbon-containing hard mask layer, and etching the target layer in the presence of the hard mask layer.

摘要翻译： 使用光学可写掩模在半导体衬底上处理薄膜结构的方法包括将衬底放置在反应室中，所述衬底在其表面上根据预定图案在其表面上具有待蚀刻的靶层，并且沉积碳 - （a）将含碳工艺气体引入所述腔室中，（b）在折入路径中产生可重入环形的RF等离子体电流，所述凹入的RF等离子体电流包括通过耦合等离子体RF源功率的工件区域 到（c）将RF等离子体偏置功率或偏置电压耦合到工件的外部部分。 该方法还包括光刻地限定含碳硬掩模层中的预定图案，并且在存在硬掩模层的情况下蚀刻目标层。

公开(公告)号：US20060088655A1

公开(公告)日：2006-04-27

申请号：US10971772

申请日：2004-10-23

申请人： Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Amir Al-Bayati ,  Andrew Nguyen ,  Biagio Gallo

发明人： Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Amir Al-Bayati ,  Andrew Nguyen ,  Biagio Gallo

IPC分类号： C23C14/00 ,  C23C16/52

CPC分类号： H01J37/321 ,  C23C14/48 ,  C23C14/54 ,  H01J37/32412 ,  H01J37/32935

摘要： A method of measuring ion dose in a plasma immersion ion implantation reactor during ion implantation of a selected species into a workpiece includes placing the workpiece on a pedestal in the reactor and feeding into the reactor a process gas comprising a species to be implanted into the workpiece, and then coupling RF plasma source power to a plasma in the reactor. It further includes coupling RF bias power to the workpiece by an RF bias power generator that is coupled to the workpiece through a bias feedpoint of the reactor and measuring RF current at the feedpoint to generate a current-related value, and then integrating the current-related over time to produce an ion implantation dose-related value.

摘要翻译： 在将所选择的物质离子注入工件期间测量等离子体浸入式离子注入反应器中的离子剂量的方法包括将工件放置在反应器中的基座上，并将反应器中的工件气体进料到反应器中， 然后将RF等离子体源功率耦合到反应器中的等离子体。 它还包括通过RF偏置功率发生器将RF偏置功率耦合到工件，该RF偏置功率发生器通过电抗器的偏置馈电点耦合到工件，并且在馈电点处测量RF电流以产生电流相关值， 随着时间的推移产生离子注入剂量相关值。

公开(公告)号：US20060073683A1

公开(公告)日：2006-04-06

申请号：US11284975

申请日：2005-11-21

申请人： Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo ,  Gonzalo Monroy

发明人： Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo ,  Gonzalo Monroy

IPC分类号： H01L21/04

CPC分类号： H01J37/32357 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32412 ,  H01L21/2236

摘要： A method of ion implanting a species in a workpiece to a selected ion implantation profile depth includes placing a workpiece having a semiconductor material on an electrostatic chuck in or near a processing region of a plasma reactor chamber and applying a chucking voltage to the electrostatic chuck. The method further includes introducing into the chamber a precursor gas including a species to be ion implanted in the workpiece and applying an RF bias to the electrostatic chuck, the RF bias having a bias level corresponding to the ion implantation profile depth.

摘要翻译： 将工件中的物质离子注入到选定的离子注入轮廓深度的方法包括将具有半导体材料的工件放置在等离子体反应器室的处理区域中或其附近的静电卡盘上，并向静电卡盘施加夹持电压。 所述方法还包括将包括要离子植入的物质的前体气体引入所述室中并将RF偏压施加到所述静电卡盘，所述RF偏压具有对应于所述离子注入轮廓深度的偏置电平。

公开(公告)号：US20050191828A1

公开(公告)日：2005-09-01

申请号：US11003000

申请日：2004-12-01

申请人： Amir Al-Bayati ,  Rick Roberts ,  Kenneth Collins ,  Ken MacWilliams ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Biagio Gallo ,  Andrew Nguyen

发明人： Amir Al-Bayati ,  Rick Roberts ,  Kenneth Collins ,  Ken MacWilliams ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Biagio Gallo ,  Andrew Nguyen

IPC分类号： H01J37/32 ,  H01L21/4763

CPC分类号： H01J37/32082 ,  H01J37/321 ,  H01L21/76254

摘要： An integrated microelectronic circuit has a multi-layer interconnect structure overlying the transistors consisting of stacked metal pattern layers and insulating layers separating adjacent ones of said metal pattern layers. Each of the insulating layers is a dielectric material with plural gas bubbles distributed within the volume of the dielectric material to reduce the dielectric constant of the material, the gas bubbles being formed by ion implantation of a gaseous species into the dielectric material.

摘要翻译： 集成的微电子电路具有覆盖由堆叠的金属图案层和分离相邻的所述金属图案层的绝缘层的晶体管的多层互连结构。 每个绝缘层是具有分布在电介质材料的体积内的多个气泡的介电材料，以降低材料的介电常数，气泡通过将气态物质离子注入电介质材料而形成。

公开(公告)号：US20070042580A1

公开(公告)日：2007-02-22

申请号：US11551196

申请日：2006-10-19

申请人： Amir Al-Bayati ,  Rick Roberts ,  Kenneth Collins ,  Ken MacWilliams ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Biagio Gallo ,  Andrew Nguyen

发明人： Amir Al-Bayati ,  Rick Roberts ,  Kenneth Collins ,  Ken MacWilliams ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Biagio Gallo ,  Andrew Nguyen

IPC分类号： H01L21/425

CPC分类号： H01L21/823864 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02321 ,  H01L21/0234 ,  H01L21/31695 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/823871 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： An integrated microelectronic circuit has a multi-layer interconnect structure overlying the transistors consisting of stacked metal pattern layers and insulating layers separating adjacent ones of said metal pattern layers. Each of the insulating layers is a dielectric material with plural gas bubbles distributed within the volume of the dielectric material to reduce the dielectric constant of the material, the gas bubbles being formed by ion implantation of a gaseous species into the dielectric material.

摘要翻译： 集成的微电子电路具有覆盖由堆叠的金属图案层和分离相邻的所述金属图案层的绝缘层的晶体管的多层互连结构。 每个绝缘层是具有分布在电介质材料的体积内的多个气泡的介电材料，以降低材料的介电常数，气泡通过将气态物质离子注入电介质材料而形成。

公开(公告)号：US20060263540A1

公开(公告)日：2006-11-23

申请号：US11131899

申请日：2005-05-17

申请人： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

发明人： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

IPC分类号： H05H1/24

CPC分类号： H05H1/46

摘要： A method of processing a workpiece includes introducing an optical absorber material precursor gas into a chamber containing the workpiece, generating an RF oscillating toroidal plasma current in a reentrant path that includes a process zone overlying the workpiece by applying RF source power, so as to deposit a layer of an optical absorber material on the workpiece, and exposing the workpiece to optical radiation that is at least partially absorbed in the optical absorber layer.

摘要翻译： 一种处理工件的方法包括将光吸收材料前体气体引入到包含工件的室中，在折入路径中产生RF振荡环形等离子体电流，其包括通过施加RF源功率覆盖工件的工艺区域，以便沉积 在工件上的光吸收材料层，以及将工件暴露于至少部分地吸收在光吸收层中的光辐射。

公开(公告)号：US20050136604A1

公开(公告)日：2005-06-23

申请号：US11002965

申请日：2004-12-01

申请人： Amir Al-Bayati ,  Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Biagio Gallo ,  Andrew Nguyen

发明人： Amir Al-Bayati ,  Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Biagio Gallo ,  Andrew Nguyen

IPC分类号： H01J37/32 ,  H01L21/336

CPC分类号： H01J37/321 ,  H01L29/66795 ,  H01L29/66803 ,  H01L29/7843 ,  H01L29/785 ,  H01L29/78618

摘要： A process for conformally doping through the vertical and horizontal surfaces of a 3-dimensional vertical transistor in a semiconductor-on-insulator structure employs an RF oscillating torroidal plasma current to perform either conformal ion implantation, or conformal deposition of a dopant-containing film which can then be heated to drive the dopants into the transistor. Some embodiments employ both conformal ion implantation and conformal deposition of dopant containing films, and in those embodiments in which the dopant containing film is a pure dopant, the ion implantation and film deposition can be performed simultaneously.

摘要翻译： 通过绝缘体上半导体结构中的三维垂直晶体管的垂直和水平表面进行保形掺杂的工艺采用RF振荡环形等离子体电流来执行保形离子注入或含掺杂剂膜的共形沉积 然后可以加热以将掺杂剂驱动到晶体管中。 一些实施例采用包含掺杂剂的膜的共形离子注入和共形沉积，并且在其中含掺杂剂的膜是纯掺杂剂的那些实施例中，可以同时执行离子注入和膜沉积。

公开(公告)号：US20050070073A1

公开(公告)日：2005-03-31

申请号：US10989993

申请日：2004-11-16

申请人： Amir Al-Bayati ,  Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Biagio Gallo ,  Andrew Nguyen

发明人： Amir Al-Bayati ,  Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Biagio Gallo ,  Andrew Nguyen

IPC分类号： H01J37/32 ,  H01L21/301

CPC分类号： H01L21/76254 ,  C23C14/48 ,  C23C16/507 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/32412 ,  H01L21/2236 ,  H01L21/26513 ,  H01L21/31604 ,  H01L21/318 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823842 ,  H01L29/6659

摘要： A method of fabricating a semiconductor-on-insulator structure from a pair of semiconductor wafers, includes forming an oxide layer on at least a first surface of a first one of the wafers and performing a bonding enhancement implantation step by ion implantation of a first species in the first surface of at least either of the pair of wafers. The method further includes performing a cleavage ion implantation step on one of the pair of wafers by ion implanting a second species to define a cleavage plane across a diameter of the wafer at the predetermined depth below the top surface of the one wafer. The wafers are then bonded together by placing the first surfaces of the pair of wafers onto one another so as to form an semiconductor-on-insulator structure. The method also includes separating the one wafer along the cleavage plane so as to remove a portion of the one wafer between the second surface and the cleavage plane, whereby to form an exposed cleaved surface of a remaining portion of the one wafer on the semiconductor-on-insulator structure. Finally, the cleaved surface is smoothed, preferably by carrying out a low energy high momentum ion implantation step.

摘要翻译： 一种从一对半导体晶片制造绝缘体上半导体结构的方法包括在第一晶片的至少第一表面上形成氧化物层，并通过离子注入第一种类进行接合增强注入步骤 在所述一对晶片中的至少一个的第一表面中。 所述方法还包括通过离子注入第二种类来在所述一对晶片之一上执行切割离子注入步骤，以在所述晶片的顶部表面下方的预定深度处限定跨所述晶片的直径的解理面。 然后通过将一对晶片的第一表面放置在彼此上而将晶片结合在一起，以形成绝缘体上半导体结构。 该方法还包括沿着解理平面分离一个晶片，以便去除第二表面和解理面之间的一个晶片的一部分，从而形成半导体芯片上的一个晶片的剩余部分的暴露的切割表面， 绝缘体上的结构。 最后，优选通过进行低能量的高动量离子注入步骤来平滑切割的表面。

公开(公告)号：US20050051271A1

公开(公告)日：2005-03-10

申请号：US10646460

申请日：2003-08-22

申请人： Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo ,  Gonzalo Monroy

发明人： Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo ,  Gonzalo Monroy

IPC分类号： H01J37/32 ,  C23F1/00

CPC分类号： H01J37/321 ,  H01J37/32082 ,  H01J37/32412

摘要： A system for processing a workpiece includes a plasma immersion implantation reactor with an enclosure comprising a side wall and a ceiling and defining a chamber, and a workpiece support pedestal within the chamber having a workpiece support surface facing the ceiling and defining a process region extending generally across the wafer support pedestal. The reactor includes a gas distribution apparatus for introducing a process gas containing a first species to be ion implanted into a surface layer of the workpiece, and inductively coupled source power applicator, and an RF plasma source power generator coupled to the inductively coupled source power applicator for inductively coupling RF source power into the process zone. The reactor further includes an RF bias generator having an RF bias frequency and coupled to the workpiece support pedestal for applying an RF bias to the workpiece. The system further includes a second wafer processing apparatus, and a wafer transfer apparatus for transferring the workpiece between the plasma immersion ion implantation reactor and the second wafer processing apparatus.

摘要翻译： 用于处理工件的系统包括等离子体浸入植入反应器，其具有包括侧壁和天花板并限定室的外壳，以及腔室内的工件支撑基座，其具有面向天花板的工件支撑表面，并且限定一般延伸的工艺区域 横跨晶片支撑座。 反应器包括用于将含有要离子注入的第一种类的处理气体引入到工件的表面层中的气体分配装置，以及电感耦合源功率施加器和耦合到电感耦合源电力施加器的RF等离子体源功率发生器 用于将RF源功率感应耦合到过程区。 反应器还包括具有RF偏置频率的RF偏置发生器，并且耦合到工件支撑基座，用于向工件施加RF偏压。 该系统还包括第二晶片处理装置和用于在等离子体浸没离子注入反应器和第二晶片处理装置之间传送工件的晶片传送装置。

公开(公告)号：US20070119546A1

公开(公告)日：2007-05-31

申请号：US11600680

申请日：2006-11-15

申请人： Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo ,  Gonzalo Monroy

发明人： Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo ,  Gonzalo Monroy

IPC分类号： H01J7/24 ,  C23F1/00

CPC分类号： H01J37/321 ,  H01J37/32082 ,  H01J37/32412

摘要： A plasma immersion ion implantation reactor for implanting a species into a workpiece includes an enclosure which has a side wall and a ceiling defining a chamber, and a workpiece support pedestal within the chamber for supporting a workpiece having a surface layer into which the species are to be ion implanted, the workpiece support pedestal facing an interior surface of the ceiling so as to define therebetween a process region extending generally across the diameter of the wafer support pedestal. The reactor further includes an RF plasma source power generator connected across the ceiling or the sidewall and the workpiece support pedestal for capacitively coupling RF source power into the chamber. A gas distribution apparatus is provided for furnishing process gas into the chamber and a supply of process gas is provided for furnishing to the gas distribution devices a process gas containing the species. An RF bias generator is connected to the workpiece support pedestal and has an RF bias frequency for establishing an RF bias.

摘要翻译： 用于将物种植入工件的等离子体浸入式离子注入反应器包括具有限定腔室的侧壁和顶板的壳体，以及腔室内的工件支撑基座，用于支撑具有物体所属表面层的工件 离子注入，工件支撑台座面向天花板的内表面，以便在其间限定大致延伸穿过晶片支撑台座的直径的工艺区域。 反应器还包括连接在天花板或侧壁上的RF等离子体源功率发生器和用于将RF源功率电容耦合到腔室中的工件支撑基座。 提供了一种用于将工艺气体提供到腔室中的气体分配装置，并且提供了一种工艺气体供给装置，用于向气体分配装置提供含有该物质的工艺气体。 RF偏置发生器连接到工件支撑基座，并具有用于建立RF偏压的RF偏置频率。