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    Light-emitting semiconductor device using group III nitrogen compound
    42.
    发明申请
    Light-emitting semiconductor device using group III nitrogen compound 有权
    使用III族氮化合物的发光半导体器件

    公开(公告)号：US20080173880A1

    公开(公告)日：2008-07-24

    申请号：US12003173

    申请日：2007-12-20

    申请人： Katsuhide Manabe ,  Hisaki Kato ,  Michinari Sassa ,  Shiro Yamazaki ,  Makoto Asai ,  Naoki Shibata ,  Masayoshi Koike

    发明人： Katsuhide Manabe ,  Hisaki Kato ,  Michinari Sassa ,  Shiro Yamazaki ,  Makoto Asai ,  Naoki Shibata ,  Masayoshi Koike

    IPC分类号： H01L33/00 ,  H01L21/00

    CPC分类号： H01L33/32 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/325 ,  H01L33/38 ,  H01L33/382 ,  H01L33/385 ,  H01L33/40

    摘要： A light-emitting semiconductor device (10) consecutively includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n+-layer (3) of high carrier (n-type) concentration, a Si-doped (Alx3Ga1-x3)y3In1-y3N n+-layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Alx2Ga1-x2)y2In1-y2N emission layer (5), and a Mg-doped (Alx1Ga1-x1)y1In1-y1N p-layer (6). The AlN layer (2) has a 500 Å thickness. The GaN n+-layer (3) has about a 2.0 μm thickness and a 2×1018/cm3 electron concentration. The n+-layer (4) has about a 2.0 μm thickness and a 2×1018/cm3 electron concentration. The emission layer (5) has about a 0.5 μm thickness. The p-layer 6 has about a 1.0 μm thickness and a 2×1017/cm3 hole concentration. Nickel electrodes (7, 8) are connected to the p-layer (6) and n+-layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8). The composition ratio of Al, Ga, and In in each of the layers (4, 5, 6) is selected to meet the lattice constant of GaN in the n+-layer (3). The LED (10) is designed to improve luminous intensity and to obtain purer blue color.

    摘要翻译： 发光半导体器件（10）连续地包括蓝宝石衬底（1），AlN缓冲层（2），高载体的硅（Si）掺杂GaN n + +层（3） （n型）浓度，Si掺杂（Al x3 Ga 1-x 3）y 3在1-y 3中， 具有高载流子（n型）浓度的氮（Zn）和Si掺杂（Al 2 x 2 Ga 2） 1-x2 Y2在1-y2 N发射层（5）中，以及Mg掺杂（Al x1 Ga） 在1-y1 N p层（6）中。 AlN层（2）的厚度为500埃。 GaN n + +（3）具有约2.0μm厚度和2×10 18 / cm 3电子浓度。 n + +层（4）具有约2.0μm厚度和2×10 18 / cm 3电子浓度。 发射层（5）的厚度约为0.5μm。 p层6具有约1.0μm厚度和2×10 17 / cm 3孔浓度。 镍电极（7,8）分别连接到p层（6）和n + +层（4）。 一个凹槽（9）使电极（7,8）电绝缘。 选择各层（4,5,6）中的Al，Ga和In的组成比以满足n +层（3）中的GaN的晶格常数。 LED（10）被设计为提高发光强度并获得更纯的蓝色。

    Physical quantity sensor having multiple through holes
    43.
    发明授权
    Physical quantity sensor having multiple through holes 有权
    物理量传感器具有多个通孔

    公开(公告)号：US07337670B2

    公开(公告)日：2008-03-04

    申请号：US11649254

    申请日：2007-01-04

    申请人： Minoru Murata ,  Kenichi Yokoyama ,  Makoto Asai

    发明人： Minoru Murata ,  Kenichi Yokoyama ,  Makoto Asai

    IPC分类号： G01P15/00

    CPC分类号： G01C19/5719 ,  G01P15/125

    摘要： A semiconductor physical quantity sensor includes: a substrate; a semiconductor layer supported on the substrate; a trench disposed in the semiconductor layer; and a movable portion disposed in the semiconductor layer and separated from the substrate by the trench. The movable portion includes a plurality of through-holes, each of which penetrates the semiconductor layer in a thickness direction. The movable portion is capable of displacing on the basis of a physical quantity applied to the movable portion so that the physical quantity is detected by a displacement of the movable portion. The movable portion has a junction disposed among the through-holes. The junction has a trifurcate shape.

    摘要翻译： 半导体物理量传感器包括：基板; 支撑在基板上的半导体层; 设置在所述半导体层中的沟槽; 以及可移动部分，其设置在所述半导体层中并且通过所述沟槽与所述衬底分离。 可动部包括在厚度方向上贯穿半导体层的多个贯通孔。 可移动部分能够基于施加到可移动部分的物理量来移位，使得通过可移动部分的位移来检测物理量。 可动部分具有设置在通孔中的接合部。 交界处有三叉形。

    Light-emitting semiconductor device using group III nitrogen compound
    46.
    发明申请
    Light-emitting semiconductor device using group III nitrogen compound 失效
    使用III族氮化合物的发光半导体器件

    公开(公告)号：US20060118821A1

    公开(公告)日：2006-06-08

    申请号：US11328079

    申请日：2006-01-10

    申请人： Katsuhide Manabe ,  Hisaki Kato ,  Michinari Sassa ,  Shiro Yamazaki ,  Makoto Asai ,  Naoki Shibata ,  Masayoshi Koike

    发明人： Katsuhide Manabe ,  Hisaki Kato ,  Michinari Sassa ,  Shiro Yamazaki ,  Makoto Asai ,  Naoki Shibata ,  Masayoshi Koike

    IPC分类号： H01L31/109

    CPC分类号： H01L33/32 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/325 ,  H01L33/38 ,  H01L33/382 ,  H01L33/385 ,  H01L33/40

    摘要： A light-emitting semiconductor device (10) consecutively includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n+-layer (3) of high carrier (n-type) concentration, a Si-doped (Alx3Ga1-x3)y3In1-y3N n+-layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Alx2Ga1-x2)y2In1-y2N emission layer (5), and a Mg-doped (Alx1Ga1-x1)y1In1-y1N p-layer (6). The AlN layer (2) has a 500 Å thickness. The GaN n+-layer (3) has about a 2.0 μm thickness and a 2×1018/cm3 electron concentration. The n+-layer (4) has about a 2.0 μm thickness and a 2×1018/cm3 electron concentration. The emission layer (5) has about a 0.5 μm thickness. The p-layer 6 has about a 1.0 μm thickness and a 2×1017/cm3 hole concentration. Nickel electrodes (7, 8) are connected to the p-layer (6) and n+-layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8). The composition ratio of Al, Ga, and In in each of the layers (4, 5, 6) is selected to meet the lattice constant of GaN in the n+-layer (3). The LED (10) is designed to improve luminous intensity and to obtain purer blue color.

    摘要翻译： 发光半导体器件（10）连续地包括蓝宝石衬底（1），AlN缓冲层（2），高载体的硅（Si）掺杂GaN n + +层（3） （n型）浓度，Si掺杂（Al x3 Ga 1-x 3）y 3在1-y 3中， 具有高载流子（n型）浓度的氮（Zn）和Si掺杂（Al 2 x 2 Ga 2） 1-x2 Y2在1-y2 N发射层（5）中，以及Mg掺杂（Al x1 Ga） 在1-y1 N p层（6）中。 AlN层（2）的厚度为500埃。 GaN n + +层（3）具有约2.0μm厚度和2×10 18 / cm 3电子浓度。 n + +层（4）具有约2.0μm厚度和2×10 18 / cm 3电子浓度。 发射层（5）的厚度约为0.5μm。 p层6具有约1.0μm厚度和2×10 17 / cm 3孔浓度。 镍电极（7,8）分别连接到p层（6）和n + +层（4）。 一个凹槽（9）使电极（7,8）电绝缘。 选择各层（4,5,6）中的Al，Ga和In的组成比以满足n +层（3）中的GaN的晶格常数。 LED（10）被设计为提高发光强度并获得更纯的蓝色。

    LIght-emitting semiconductor device using group III nitrogen compound
    47.
    发明申请
    LIght-emitting semiconductor device using group III nitrogen compound 有权
    使用III族氮化合物的发光半导体器件

    公开(公告)号：US20050224834A1

    公开(公告)日：2005-10-13

    申请号：US11143664

    申请日：2005-06-03

    申请人： Katsuhide Manabe ,  Hisaki Kato ,  Michinari Sassa ,  Shiro Yamazaki ,  Makoto Asai ,  Naoki Shibata ,  Masayoshi Koike

    发明人： Katsuhide Manabe ,  Hisaki Kato ,  Michinari Sassa ,  Shiro Yamazaki ,  Makoto Asai ,  Naoki Shibata ,  Masayoshi Koike

    IPC分类号： H01L33/00 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40

    CPC分类号： H01L33/32 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/325 ,  H01L33/38 ,  H01L33/382 ,  H01L33/385 ,  H01L33/40

    摘要： A light-emitting semiconductor device (10) consecutively includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n+-layer (3) of high carrier (n-type) concentration, a Si-doped (Alx3Ga1-x3)y3In1-y3N n+-layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Alx2Ga1-x2)y2In1-y2N emission layer (5), and a Mg-doped (Alx1Ga1-x1)y1In1-y1N p-layer (6). The AlN layer (2) has a 500 Å thickness. The GaN n+-layer (3) has about a 2.0 μm thickness and a 2×1018/cm3 electron concentration. The n+-layer (4) has about a 2.0 μm thickness and a 2×1018/cm3 electron concentration. The emission layer (5) has about a 0.5 μm thickness. The p-layer 6 has about a 1.0 μm thickness and a 2×1017/cm3 hole concentration. Nickel electrodes (7, 8) are connected to the p-layer (6) and n+-layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8). The composition ratio of Al, Ga, and In in each of the layers (4, 5, 6) is selected to meet the lattice constant of GaN in the n+-layer (3). The LED (10) is designed to improve luminous intensity and to obtain purer blue color.

    摘要翻译： 发光半导体器件（10）连续地包括蓝宝石衬底（1），AlN缓冲层（2），高载体的硅（Si）掺杂GaN n + +层（3） （n型）浓度，Si掺杂（Al x3 Ga 1-x 3）y 3在1-y 3中， 具有高载流子（n型）浓度的氮（Zn）和Si掺杂（Al 2 x 2 Ga 2） 1-x2 Y2在1-y2 N发射层（5）中，以及Mg掺杂（Al x1 Ga） 在1-y1 N p层（6）中。 AlN层（2）的厚度为500埃。 GaN n + +（3）具有约2.0μm厚度和2×10 18 / cm 3电子浓度。 n + +层（4）具有约2.0μm厚度和2×10 18 / cm 3电子浓度。 发射层（5）的厚度约为0.5μm。 p层6具有约1.0μm厚度和2×10 17 / cm 3孔浓度。 镍电极（7,8）分别连接到p层（6）和n + +层（4）。 一个凹槽（9）使电极（7,8）电绝缘。 选择各层（4,5,6）中的Al，Ga和In的组成比以满足n +层（3）中的GaN的晶格常数。 LED（10）被设计为提高发光强度并获得更纯的蓝色。

    Copper alloy for electronic instruments
    48.
    发明授权
    Copper alloy for electronic instruments 失效
    铜合金电子仪器

    公开(公告)号：US5021105A

    公开(公告)日：1991-06-04

    申请号：US307488

    申请日：1989-02-08

    申请人： Makoto Asai ,  Yoshimasa Ohyama ,  Tohru Tanigawa ,  Shigeo Shinozaki ,  Shoji Shiga

    发明人： Makoto Asai ,  Yoshimasa Ohyama ,  Tohru Tanigawa ,  Shigeo Shinozaki ,  Shoji Shiga

    IPC分类号： C22C9/02 ,  H01L23/48 ,  H01R13/03

    CPC分类号： C22C9/02 ,  H01L23/48 ,  H01R13/03 ,  H01L2924/0002

    摘要： A copper alloy for electronic instruments is disclosed which comprises 2.0 to 7.0 wt. % of Sn, 1.0 to 6.0 wt. % in total amount of at least one kind of Ni, Co and Cr, o.1 to 2.0 wt. % of Si, and the remainder of Cu and unavoidable impurities, thereby further the content of O.sub.2 in unavoidable impurities being not more than 50 ppm, the content of S being not more than 20 ppm, and the average particle diameter of precipitates being not larger than 10 .mu.m. As the uses of such copper alloys, lead material for semiconductor elements and connector, socket, spring and terminal for electronic and electric instruments are claimed.

    摘要翻译： 公开了一种电子仪器用铜合金，其包含2.0〜7.0重量％ Sn的％，1.0〜6.0重量％ Ni，Co和Cr中的至少一种的总量的％为0.1〜2.0重量％。 ％的Si，剩余的Cu和不可避免的杂质，因此不可避免的杂质中的O 2含量不大于50ppm，S的含量不超过20ppm，沉淀物的平均粒径不大 超过10亩。 作为这种铜合金的用途，要求用于半导体元件和连接器的铅材料，插座，电子和电气仪器的弹簧和端子。