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    High Productivity Combinatorial Material Screening for Stable, High-Mobility Non-Silicon Thin Film Transistors
    43.
    发明申请
    High Productivity Combinatorial Material Screening for Stable, High-Mobility Non-Silicon Thin Film Transistors 有权
    高生产率组合材料筛选稳定，高迁移率非硅薄膜晶体管

    公开(公告)号：US20150179684A1

    公开(公告)日：2015-06-25

    申请号：US14135086

    申请日：2013-12-19

    Applicant: Intermolecular, Inc.

    Inventor： Jeroen Van Duren ,  Sang Lee ,  Minh Huu Le

    IPC: H01L27/12 ,  H01L21/465 ,  H01L21/66 ,  H01L21/02

    CPC classification number: H01L27/1259 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/465 ,  H01L22/14 ,  H01L22/20 ,  H01L27/1225 ,  H01L27/1262 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

    Abstract: Methods for HPC techniques are applied to the processing of site-isolated regions (SIR) on a substrate to form at least a portion of a TFT device used in display applications. The processing may be applied to at least one of gate dielectric deposition, gate dielectric patterning, metal-based semiconductor deposition, metal-based patterning, etch stop deposition, etch stop patterning, source/drain deposition, or source/drain patterning. The SIRs may be defined during the deposition process with uniform deposition within each SIR or the SIRs may be defined subsequent to the deposition of layers wherein the layers are deposited with a gradient in one or more properties across the substrate.

    Abstract translation: 将HPC技术的方法应用于基板上的位置隔离区域（SIR）的处理，以形成在显示应用中使用的TFT器件的至少一部分。 该处理可以应用于栅极介电沉积，栅极电介质图案化，基于金属的半导体沉积，基于金属的图案化，蚀刻停止沉积，蚀刻停止图案化，源极/漏极沉积或源极/漏极图案化中的至少一个。 可以在沉积过程期间限定SIR，每个SIR内均匀沉积，或者可以在层的沉积之后定义SIR，其中层以跨越衬底的一个或多个特性的梯度沉积。

    High Productivity Combinatorial Material Screening for Metal Oxide Films
    44.
    发明申请
    High Productivity Combinatorial Material Screening for Metal Oxide Films 有权
    金属氧化物膜的高生产率组合材料筛选

    公开(公告)号：US20150179683A1

    公开(公告)日：2015-06-25

    申请号：US14134571

    申请日：2013-12-19

    Applicant: Intermolecular, Inc.

    Inventor： Minh Huu Le ,  Sang Lee ,  Jeroen Van Duren

    IPC: H01L27/12 ,  H01L21/66 ,  H01L21/02

    CPC classification number: H01L21/02565 ,  H01L21/02554 ,  H01L22/14 ,  H01L22/20 ,  H01L27/1225 ,  H01L29/7869 ,  H01L29/78693

    Abstract: Methods for HPC techniques are applied to the processing of site-isolated regions (SIR) on a substrate to form at least a portion of a TFT device used in display applications. The processing may be applied to at least one of gate dielectric deposition, gate dielectric patterning, metal-based semiconductor (e.g. ZnOx, ZnSnOx, ZnInOx, or ZnGaOx) deposition, metal-based semiconductor (e.g. ZnOx, ZnSnOx, ZnInOx, or ZnGaOx) patterning, etch stop deposition, etch stop patterning, source/drain deposition, or source/drain patterning. The SIRs may be defined during the deposition process with uniform deposition within each SIR or the SIRs may be defined subsequent to the deposition of layers wherein the layers are deposited with a gradient in one or more properties across the substrate.

    Abstract translation: 将HPC技术的方法应用于基板上的位置隔离区域（SIR）的处理，以形成在显示应用中使用的TFT器件的至少一部分。 该处理可以应用于栅极介电沉积，栅极电介质图案化，金属基半导体（例如ZnO x，ZnSnO x，ZnInO x或ZnGaO x）沉积，金属基半导体（例如ZnO x，ZnSnO x，ZnInO x或ZnGaO x）中的至少一种， 图案化，蚀刻停止沉积，蚀刻停止图案化，源极/漏极沉积或源极/漏极图案化。 可以在沉积过程期间限定SIR，每个SIR内均匀沉积，或者可以在层的沉积之后定义SIR，其中层以跨越衬底的一个或多个特性的梯度沉积。

    SYSTEMS, METHODS, AND APPARATUS FOR INTEGRATED GLASS UNITS HAVING ADJUSTABLE SOLAR HEAT GAINS
    45.
    发明申请
    SYSTEMS, METHODS, AND APPARATUS FOR INTEGRATED GLASS UNITS HAVING ADJUSTABLE SOLAR HEAT GAINS 审中-公开
    具有可调节太阳能热增益的集成玻璃单元的系统，方法和装置

    公开(公告)号：US20150177583A1

    公开(公告)日：2015-06-25

    申请号：US14139441

    申请日：2013-12-23

    Applicant: Intermolecular Inc.

    Inventor： Guowen Ding ,  Minh Huu Le

    IPC: G02F1/153

    CPC classification number: G02F1/153 ,  G02F1/133553

    Abstract: Disclosed herein are systems, methods, and apparatus for forming windows that may include a substrate, a bottom dielectric layer formed over the substrate, and a reflective layer formed over the bottom dielectric layer. The windows may also include a conducting barrier layer formed over the reflective layer, an electrochromic layer formed over the conducting barrier layer, and an ion conductor layer formed over the electrochromic layer. The windows may further include an ion storage layer formed over the ion conductor layer and a conducting oxide layer formed over the ion storage layer. The electrochromic layer may be configured to change a transmissivity of the windows in response to a voltage being applied to the window. The windows may have an emissivity of between about 0.01 and 0.08.

    Abstract translation: 本文公开了用于形成窗口的系统，方法和装置，其可以包括衬底，形成在衬底上的底部电介质层和形成在底部电介质层上的反射层。 窗口还可以包括在反射层上形成的导电阻挡层，形成在导电阻挡层上的电致变色层，以及形成在电致变色层上的离子导体层。 窗口还可以包括形成在离子导体层上的离子存储层和形成在离子存储层上的导电氧化物层。 电致变色层可以被配置为响应于施加到窗口的电压来改变窗户的透射率。 窗口的发射率可以在大约0.01和0.08之间。

    Transparent Conductive Films and Methods for Forming the Same
    46.
    发明申请
    Transparent Conductive Films and Methods for Forming the Same 审中-公开
    透明导电膜及其形成方法

    公开(公告)号：US20150162111A1

    公开(公告)日：2015-06-11

    申请号：US14101668

    申请日：2013-12-10

    Applicant: Intermolecular, Inc.

    Inventor： Guowen Ding ,  Minh Huu Le

    IPC: H01B5/14 ,  C23C14/14 ,  H01B1/02

    CPC classification number: C23C14/14 ,  C23C14/205 ,  C23C14/3464 ,  H01B1/02 ,  Y10T428/12569 ,  Y10T428/12597

    Abstract: Embodiments provided herein describe transparent conductive films and methods for forming transparent conductive films. A transparent substrate is provided. A first layer is formed above the transparent substrate. The first layer includes nickel. A second layer is formed above the first layer. The second layer includes silver and palladium. A third layer is formed above the second layer. The third layer comprises nickel.

    Abstract translation: 本文提供的实施例描述了透明导电膜和用于形成透明导电膜的方法。 提供透明基板。 在透明基板的上方形成第一层。 第一层包括镍。 在第一层上方形成第二层。 第二层包括银和钯。 在第二层上方形成第三层。 第三层包括镍。

    Novel silver barrier materials for low-emissivity applications
    50.
    发明申请
    Novel silver barrier materials for low-emissivity applications 有权
    用于低发射率应用的新型银阻挡材料

    公开(公告)号：US20140177042A1

    公开(公告)日：2014-06-26

    申请号：US13725126

    申请日：2012-12-21

    Applicant: Guardian Industries Corp. ,  Intermolecular Inc.

    Inventor： Mohd Fadzli Anwar Hassan ,  Brent Boyce ,  Guowen Ding ,  Minh Huu Le ,  Zhi-Wen Wen Sun ,  Yu Wang ,  Yongli Xu

    IPC: G02B5/20

    CPC classification number: G02B5/208 ,  C03C17/36 ,  C03C17/3644 ,  C03C17/3649 ,  C03C17/3652 ,  C03C17/366 ,  C03C17/40 ,  G02B5/282

    Abstract: A method for making low emissivity panels, including control the composition of a barrier layer formed on a thin conductive silver layer. The barrier structure can include an alloy of a first element having high oxygen affinity with a second element having low oxygen affinity. The first element can include Ta, Nb, Zr, Hf, Mn, Y, Si, and Ti, and the second element can include Ru, Ni, Co, Mo, and W, which can have low oxygen affinity property. The alloy barrier layer can reduce optical absorption in the visible range, can provide color-neutral product, and can improve adhesion to the silver layer.

    Abstract translation: 一种制造低发射率面板的方法，包括控制形成在薄导电银层上的阻挡层的组成。 阻挡结构可以包括具有高氧亲和力的第一元素与具有低氧亲合力的第二元素的合金。 第一元素可以包括Ta，Nb，Zr，Hf，Mn，Y，Si和Ti，第二元素可以包括可以具有低氧亲和性的Ru，Ni，Co，Mo和W。 合金阻挡层可以减少可见光范围内的光吸收，可以提供颜色中性的产品，并可以提高对银层的粘附性。

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